Patents by Inventor Wei Chu

Wei Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220005771
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an antenna zone and a routing zone. The routing zone is disposed on the antenna zone, where the antenna zone includes a first insulation layer and two or more second insulation layer and a thickness of the first insulation layer is different from that of the second insulation layer.
    Type: Application
    Filed: September 20, 2021
    Publication date: January 6, 2022
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Wen Hung HUANG, Yan Wen CHUNG, Wei Chu SUN
  • Patent number: 11213540
    Abstract: In an aspect, the invention relates to compositions, method, and kits for inducing apoptosis. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: January 4, 2022
    Assignee: UNIVERSITY OF UTAH RESEARCH FOUNDATION
    Inventors: Jindrich Henry Kopecek, Jiyuan Yang, Te-Wei Chu
  • Patent number: 11217786
    Abstract: An aqueous lithium-ion battery and an electrode used therein are provided, wherein the electrode includes a current collector, a coating layer, and a composite layer. The coating layer is disposed on at least one surface of the current collector, and the coating layer contains an active material. The composite layer is disposed on a surface of the coating layer. The composite layer includes a first film and a second film, wherein the first film is between the second film and the surface of the coating layer, and the water contact angle of the first film is greater than the water contact angle of the second film.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: January 4, 2022
    Assignee: Industrial Technology Research Institute
    Inventors: Hung-Chun Wu, Nae-Lih Wu, Che-Wei Chu, Yu-Hsiang Lin, Yu-Hsiu Chang
  • Patent number: 11188731
    Abstract: The present disclosure provides feature data processing methods and devices. One exemplary feature data processing method comprises: classifying features into an important feature set and an auxiliary feature set according to information attribute values of the features; converting features in the auxiliary feature set to hash features; and combining the hash features with features in the important feature set, and setting the combined features as fingerprint features. Training and prediction of to-be-processed data can be performed based on the fingerprint features. With the embodiments of the present disclosure, training dimensions can be more controllable and the amount training data amount can be reduced. Therefore, the efficiency of data processing can be improved.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: November 30, 2021
    Assignee: Alibaba Group Holding Limited
    Inventors: Bin Dai, Shen Li, Xiaoyan Jiang, Xu Yang, Yuan Qi, Wei Chu, Shaomeng Wang, Zihao Fu
  • Patent number: 11183660
    Abstract: A display device includes a substrate, an auxiliary electrode, a buffer layer, a plurality of active elements, and a plurality of light-emitting elements. The auxiliary electrode is disposed on the substrate and overlapped with an active region. The buffer layer is disposed on the auxiliary electrode. The plurality of active elements are disposed on the buffer layer and disposed in the active region. The plurality of light-emitting elements are electrically connected with the active elements, respectively. Each of the light-emitting elements includes a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode. Each of the second electrodes is electrically connected with the auxiliary electrode.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: November 23, 2021
    Assignee: Au Optronics Corporation
    Inventors: Wei-Chu Hsu, Ko-Ruey Jen
  • Publication number: 20210355981
    Abstract: A bolt clamping force sensing washer includes a sensing washer, connection line assembly, and signal processor. The sensing washer includes a body, sensing component, and bushing. The body has an axial hole that matches outer diameter of a bolt's thread. The circumferential surface of the body has a circumferential groove for receiving the sensing component which measures a deformation signal generated by the body under an axial load. Two end surfaces of the body are perpendicular to the axial hole and each have a loosening-proof structure. The bushing is made of metal or plastic or formed by plastic insulating material casting to enclose the sensing component. The signal processor has a signal amplifier, microprocessor, pairing switch, power circuit unit, signal transmission unit, memory unit, RF antenna and alert unit. The connection line assembly is disposed at the bushing to electrically connect the sensing component and signal processor.
    Type: Application
    Filed: May 14, 2020
    Publication date: November 18, 2021
    Inventors: HSIU-FENG CHU, YU-WEI CHU
  • Patent number: 11151720
    Abstract: The present invention provides a physiological information detection method for calculating a physiological value by using changes of a dynamic image. The detection method includes: acquiring detection data from a gray-scale value of the dynamic image, and transforming the detection data into frequency data. The detection method further includes: determining whether the frequency data meet a preset condition, and using a transformation model of a corresponding transformation combination accordingly to transform the frequency data into a physiological value. The present invention further provides a physiological information detection device applying the detection method.
    Type: Grant
    Filed: January 2, 2020
    Date of Patent: October 19, 2021
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Bing-Fei Wu, Yun-Wei Chu, Po-Wei Huang, Meng-Liang Chung, Yin-Cheng Tsai
  • Patent number: 11143675
    Abstract: An insulator applied in a probe base including a probe mounting hole, the insulator is a sheet structure having plural through holes, and the probe mounting hole is formed at the center of the insulator, and the probe mounting hole and the through hole penetrate from a first surface to a second surface of the insulator, and the regions of the first and second surfaces without the probe mounting hole and the through hole are coplanar. The probe base has a base body and at least a composite assembly, and the base body has at least a testing zone, and the composite assembly is installed in the testing zone and has at least a probe hole for installing a probe, and the insulator is installed into the probe hole.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: October 12, 2021
    Assignee: C.C.P. CONTACT PROBES CO., LTD.
    Inventors: Chien-Yu Hsieh, Yen-Chun Chen, Chih-Hui Hou, Wei-Chu Chen, Yen-Hui Lu, Ting-Chen Pan, Yen-Wei Lin, Bor-Chen Tsai
  • Publication number: 20210312681
    Abstract: The present invention relates to a joint automatic audio visual driven facial animation system that in some example embodiments includes a full scale state of the art Large Vocabulary Continuous Speech Recognition (LVCSR) with a strong language model for speech recognition and obtained phoneme alignment from the word lattice.
    Type: Application
    Filed: June 16, 2021
    Publication date: October 7, 2021
    Inventors: Chen Cao, Xin Chen, Wei Chu, Zehao Xue
  • Publication number: 20210305809
    Abstract: A clamp circuit includes an electrostatic discharge (ESD) detection circuit coupled between a first node and a second node. The clamp circuit further includes a first transistor of a first type. The first transistor has a first gate coupled to at least the ESD detection circuit by a third node, a first drain coupled to the first node and a first source coupled to the second node. The clamp circuit further includes a charging circuit coupled between the second node and the third node, and configured to charge the third node during an ESD event at the second node.
    Type: Application
    Filed: December 1, 2020
    Publication date: September 30, 2021
    Inventors: Tao Yi HUNG, Ming-Fang LAI, Li-Wei CHU, Wun-Jie LIN, Jam-Wem LEE
  • Patent number: 11127697
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an antenna zone and a routing zone. The routing zone is disposed on the antenna zone, where the antenna zone includes a first insulation layer and two or more second insulation layer and a thickness of the first insulation layer is different from that of the second insulation layer.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: September 21, 2021
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Wen Hung Huang, Yan Wen Chung, Wei Chu Sun
  • Patent number: 11120597
    Abstract: The present invention relates to a joint automatic audio visual driven facial animation system that in some example embodiments includes a full scale state of the art Large Vocabulary Continuous Speech Recognition (LVCSR) with a strong language model for speech recognition and obtained phoneme alignment from the word lattice.
    Type: Grant
    Filed: January 22, 2020
    Date of Patent: September 14, 2021
    Assignee: Snap Inc.
    Inventors: Chen Cao, Xin Chen, Wei Chu, Zehao Xue
  • Publication number: 20210280472
    Abstract: A semiconductor structure includes a substrate, a first silicide, and a second silicide. The substrate has a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type. The first silicide is on the first epitaxy region, the first silicide comprising a first metal and a second metal, and the second silicide is on the second epitaxy region. A work function of the first silicide is greater than a work function of the second silicide.
    Type: Application
    Filed: May 25, 2021
    Publication date: September 9, 2021
    Inventors: SUNG-LI WANG, PENG-WEI CHU, YASUTOSHI OKUNO
  • Publication number: 20210225712
    Abstract: A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositing a first metal over the first type epitaxial layer to form a first metal layer while the first metal is substantially not deposited over the second type epitaxial layer over the first type source/drain feature, and depositing a second metal over the first metal layer and the second type epitaxial layer to form a second metal layer.
    Type: Application
    Filed: April 9, 2021
    Publication date: July 22, 2021
    Inventors: Peng-Wei Chu, Sung-Li Wang, Yasutoshi Okuno
  • Publication number: 20210219936
    Abstract: A device and a method for post-processing of computed tomography (CT), which are adapted to improve an identification image of a focal nodular hyperplasia (FNH) of a liver, are provided. The method includes: obtaining the identification image including a liver contour and a non-liver contour and a Hounsfield unit (HU) value of each pixel corresponding the identification image, wherein the liver contour includes an FNH candidate contour; calculating an average HU of the liver contour; adjusting an HU value of the non-liver contour to the average HU value of the liver contour in respect with the identification image to generate a processed identification image; and updating the FNH candidate contour according to a morphological algorithm based on the processed identification image to generate an updated FNH candidate contour.
    Type: Application
    Filed: March 4, 2020
    Publication date: July 22, 2021
    Applicant: Wistron Corporation
    Inventors: Che-Wei Chu, Chun-Peng Hsu
  • Publication number: 20210206627
    Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Inventors: CHING-KAI SHEN, YI-CHUAN TENG, WEI-CHU LIN, HUNG-WEI LIANG, JUNG-KUO TU
  • Publication number: 20210193816
    Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Peng-Wei Chu, Ding-Kang Shih, Sung-Li Wang, Yasutoshi Okuno
  • Patent number: 11031300
    Abstract: A method for manufacturing a semiconductor structure is provided. The method includes: receiving a substrate having a first epitaxy region in a first transistor of a first conductive type and a second epitaxy region in a second transistor of a second conductive type; introducing an agent onto the first epitaxy region and the second epitaxy region, wherein the agent is selectively deposited to the second epitaxy region; selectively depositing a first metal layer on the first epitaxy region; and depositing a second metal layer on the first epitaxy region and the second epitaxy region. A semiconductor structure according to the method is also provided.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Sung-Li Wang, Peng-Wei Chu, Yasutoshi Okuno
  • Publication number: 20210153272
    Abstract: A method for Bluetooth inquiry/paging and a communication device therefor are provided. The method includes transmitting a plurality of inquiry/paging messages in a transmission time slot to inquire/page a peer device, wherein, the number of inquiry/paging messages is greater than two; and activating a plurality reception windows in a reception time slot to receive response messages from the peer device. The invention also provides a corresponding communication device. The invention reduces the time required for inquiry/paging to the peer device, thereby reducing the time it takes to establish a Bluetooth connection between the two devices.
    Type: Application
    Filed: November 18, 2020
    Publication date: May 20, 2021
    Inventors: Wei-Chu LAI, Wei LIU, Yuan LIU, Yuting CHI, Guangxiong ZHANG, Xiao WEN
  • Patent number: 11004204
    Abstract: A computer-implemented method includes: obtaining a sample picture and corresponding mark data, in which the mark data includes a first damage mark outline, and in which the first damage mark outline frames a damaged object in the sample picture; determining a segmentation type for a plurality of pixels in the sample picture based on the first damage mark outline, to generate segmentation mark data; inputting the sample picture to a weak segmentation damage detection model, in which the weak segmentation damage detection model includes an outline prediction branch and a segmentation prediction branch, in which the outline prediction branch outputs outline prediction data including a damage prediction outline, the damage prediction outline framing a predicted damaged object in the sample picture, and in which the segmentation prediction branch includes segmentation prediction data including a predicted segmentation type of each pixel of the plurality of pixels.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: May 11, 2021
    Assignee: Advanced New Technologies Co., Ltd.
    Inventors: Wei Zhang, Wei Chu