Abstract: The structure of a semiconductor device with dual silicide contact structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming first and second fin structures on a substrate, forming first and second epitaxial regions on the first and second fin structures, respectively, forming first and second contact openings on the first and second epitaxial regions, respectively, selectively forming an oxide capping layer on exposed surfaces of the second epitaxial region, selectively forming a first metal silicide layer on exposed surfaces of the first epitaxial region, removing the oxide capping layer, and forming first and second conductive regions on the metal silicide layer and on the exposed surfaces of the second epitaxial region, respectively. The first metal silicide layer includes a first metal. The first and second conductive regions includes a second metal different from the first metal.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. The semiconductor structure includes an epitaxial structure and a metal silicide layer. The epitaxial structure includes a semiconductor material. The metal silicide layer is disposed on the epitaxial structure. The metal silicide layer includes the semiconductor material, a first metal material and a second metal material. An atomic size of the first metal material is greater than an atomic size of the second metal material, and a concentration of the first metal material in the metal silicide layer varies along a thickness direction.

Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: Implementations of the present specification disclose methods, apparatuses, and devices for training an object detection system by using a gradient fine-tuning technique. In one aspect, the method includes: providing a training image as input to the object detection system; processing the training image by the object detection system; determining a gradient norm of each neural network layer based on object annotation data and the detection result corresponding to the training image; and updating, for each neural network layer, parameter values of the neural network layer based on an average of gradient norms and the gradient norm of the neural network layer.

Abstract: In one embodiment, a carrier device for a thermal pad of an information handling system includes: a first adhesive surface coupled to the thermal pad, the thermal pad coupled to a first surface of a first component of the information handling system, the thermal pad configured to absorb a heat generated by the first component; a thermal transfer window configured to permit the heat generated by the first component to transfer from the thermal pad to a second surface of a second component of the information handling system; and a second adhesive surface removably coupled to the second surface of the second component.

Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.

Abstract: Implementations of the present specification disclose a knowledge graph reasoning method and apparatus, a model training method and apparatus, and a computer device. The method includes: obtaining a query entity and a query relationship; selecting one or more nearest neighbor entities of the query entity from a knowledge graph; determining a first probability of a nearest neighbor entity of the one or more nearest neighbor entities, where the first probability is used to indicate a possibility that the nearest neighbor entity is in communication with the query relationship; selecting a nearest neighbor entity of the one or more nearest neighbor entities as a candidate entity based on the first probability; and selecting a candidate entity matching the query entity and the query relationship as a result entity. In the implementations of the present specification, the efficiency of knowledge graph reasoning can be improved.

Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an antenna zone and a routing zone. The routing zone is disposed on the antenna zone, where the antenna zone includes a first insulation layer and two or more second insulation layer and a thickness of the first insulation layer is different from that of the second insulation layer.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. When the first transistor is turned on by a detection signal, the first transistor is turned off.

Abstract: A torque capacity expandable device and method for a torque multiplier are introduced. The device includes a connection sleeve and a torque multiplier. The connection sleeve, fitted to a torque wrench and the torque multiplier and fastened, has a force-applied end corresponding in dimensions to a force-applying end of the torque wrench and has another end corresponding in dimensions to the force-applied end of the torque multiplier. An integral fastening mechanism is integrally fitted to or formed with each of the two ends of the torque multiplier. Its force-applied end fastening mechanism has the same dimensions as the force-applying end fastening mechanism of connection sleeve. Its force-applying end fastening mechanism has the same dimensions as the force-applied end fastening mechanism of a reaction arm disposed at the force-applying end fastening mechanism of torque multiplier.

Abstract: A teammate recommendation method for a multiplayer online game is proposed. The teammate recommendation method includes the steps of: determining one or more characteristic values for each of a plurality of players based on past game performance information of the players; dividing the players into a plurality of groups based on the characteristic values of the players; determining a Key Performance Indicator (KPI) for each of a plurality of combinations of the groups based on teammate information and team ranking of each game in the past game performance information; selecting one of the combinations, which includes a first group that the first player belongs to, based on the KPIs of the combinations; and recommending one or more second players based on the selected combination.

Abstract: A portable information handling system having a portable housing with first and second housing portions rotationally coupled by a hinge having an adjustable torque and a sensor disposed at a front corner of a housing portion reduces torque provided by the hinge when in a closed position and an indication is sensed of an end user opening the housing portions. Reducing torque of the hinge that resists housing rotation from the closed position aids an end user in a single handed rotation of the housing to an open position by allowing the weight of the housing to be sufficient to hold the housing in place on a support surface while the housing rotates open.

Abstract: A circuit module with improved line load, may comprise a first line, a first switch, a second line, a second switch and a second driver. The first switch may be on and off to conduct and stop conducting between the first line and a first node. The second switch may be on and off to conduct and stop conducting between the second line and the first node. The second driver, coupled to the second line, may be enabled to drive the second line according to a voltage of a second node, and may be disabled to stop driving the second line. The voltage of the second node may be controlled by a voltage of the first node. When the first switch is on, the second switch may be off. When the second switch is off, the second driver may be enabled.

Abstract: The present disclosure provides multi-sampling model training methods and devices. One exemplary training method includes: performing multi-sampling on samples to obtain a training set and a validation set in each sampling; using the training set and the validation set obtained in each sampling as a group, and performing model training and obtaining a trained model using the training set in each group; evaluating the trained model using the training set and the validation set in each group separately; eliminating or retaining the trained model based on the evaluation results and a predetermined elimination criterion; obtaining prediction results of the samples using retained models; and obtaining a final model by performing combined model training on the retained models using the prediction results. The final model obtained using embodiments of the present disclosure can be more robust and stable, and can provide more accurate prediction results, thus greatly improving efficiency of modeling.

Abstract: A method for Bluetooth inquiry/paging and a communication device therefor are provided. The method includes transmitting a plurality of inquiry/paging messages in a transmission time slot to inquire/page a peer device, wherein, the number of inquiry/paging messages is greater than two; and activating a plurality reception windows in a reception time slot to receive response messages from the peer device. The invention also provides a corresponding communication device. The invention reduces the time required for inquiry/paging to the peer device, thereby reducing the time it takes to establish a Bluetooth connection between the two devices.

Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.

Abstract: A circuit, including: a photodetector including a first readout terminal and a second readout terminal different than the first readout terminal; a first readout circuit coupled with the first readout terminal and configured to output a first readout voltage; a second readout circuit coupled with the second readout terminal and configured to output a second readout voltage; and a common-mode analog-to-digital converter (ADC) including: a first input terminal coupled with a first voltage source; a second input terminal coupled with a common-mode generator, the common-mode generator configured to receive the first readout voltage and the second readout voltage, and to generate a common-mode voltage between the first and second readout voltages; and a first output terminal configured to output a first output signal corresponding to a magnitude of a current generated by the photodetector.