Abstract: The present disclosure provides an electronic package. The electronic package includes a substrate, a first component disposed on the substrate and configured to detect an external signal, and an encapsulant disposed on the substrate. The electronic package also includes a protection element disposed on the substrate and physically separating the first device from the encapsulant and exposing the first device. The present disclosure also provides an electronic device.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a conductive line over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive line and a carbon-containing conductive via directly on the catalyst structure. The semiconductor device structure further includes a dielectric layer surrounding the carbon-containing conductive via.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.

Abstract: A light emitting substrate, a method of driving a light emitting substrate, and a display device are provided. The light emitting substrate includes a plurality of light emitting units arranged in an array. Each light emitting unit includes a driving circuit, a plurality of light emitting elements, and a driving voltage terminal. The plurality of light emitting elements are sequentially connected in series and connected between the driving voltage terminal and the output terminal of the driving circuit. The driving circuit is configured to output a relay signal through the output terminal in a first period according to a first input signal received by the first input terminal and a second input signal received by the second input terminal, and supply a driving signal to the plurality of light emitting elements sequentially connected in series through the output terminal in a second period.

Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

Abstract: A light emitting substrate is provided. The light emitting substrate includes a plurality of light emitting controlling units arranged in M rows and N columns, M is an integer equal to or greater than one, N is an integer equal to or greater than one. A respective column of the N columns of light emitting controlling units includes M number of groups of second voltage signal lines, a respective group of the M number of groups of second voltage signal lines connected to a respective one of the M number of light emitting controlling units, the respective group of the M number of groups of second voltage signal lines including k number of second voltage signal lines, k is an integer equal to or greater than one.

Abstract: A projection device includes: an illumination system providing an illumination beam; a light valve arranged on a transmission path of the illumination beam and converting the illumination beam into an image beam; a projection lens arranged on a transmission path of the image beam and projecting the image beam out of the projection device; a first actuating module connecting and moving a first element, so that the image beam shifts back and forth along at least one of the first, second, and third directions; and a second actuating module connecting and moving a second element, so that the image beam shifts back and forth along at least one of the first, second, and third directions. The first and second directions are perpendicular. The third and first directions form an angle of 45 degrees, so do the third and second directions. The first and second elements are different.

Abstract: An electronic device package and a method for manufacturing the electronic device are provided. The electronic device includes a charging element, a housing covering the charging element and a sensing element electrically connected to the housing. The sensing element is configured to detect an external device and to drive the charging element.

Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.

Abstract: A semiconductor structure includes a gate structure over a substrate. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes a contact structure formed over the source/drain epitaxial structure. The structure also includes a first via structure formed over the contact structure. The structure also includes a metal line electrically connected to the first via structure. The structure also includes a spacer layer formed over the sidewall and over a portion of a top surface of the metal line. The structure also includes a second via structure formed over the metal line through the spacer layer.

Abstract: An semiconductor device includes a first dielectric layer, an etch stop layer, an interconnect structure, and a second dielectric layer. The etch stop layer is over the first dielectric layer. The interconnect structure includes a conductive via in the first dielectric layer and the etch stop layer, a conductive line over the conductive via, an intermediate conductive layer over the conductive line, and a conductive pillar over the intermediate conductive layer. The interconnect structure is electrically conductive at least from a top of the conductive pillar to a bottom of the conductive via. The second dielectric layer surrounds the conductive line, the intermediate conductive layer, and the conductive pillar, wherein a bottom of the second dielectric layer is lower than a top of the conductive line, and a top of the second dielectric layer is higher than the top of the conductive line.

Abstract: In one embodiment, a method of forming metal interconnects uses a direct metal etch approach to form and fill the metal gap. The method may include directly etching a metal layer to form metal patterns. The metal patterns may be spaced apart from one another by recesses. A dielectric spacer may be formed extending along the sidewalls of each of the recesses. The recesses may be filled with a conductive material to form a second set of metal patterns. By directly etching the metal film, the technique allows for reduced line width roughness. The disclosed structure may have the advantages of increased reliability, better RC performance and reduced parasitic capacitance.

Abstract: diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB6) powder to obtain a precursor powder; and (S2) subjecting the precursor powder to pressureless sintering to obtain the high-entropy carbide-high-entropy diboride-SiC multiphase ceramic with a relative density of 96% or more.

Abstract: An extreme ultraviolet (EUV) mask, includes a substrate, a reflective multilayer stack on the substrate, and a single layer or multi-layer capping feature on the reflective multilayer stack. The capping feature includes a capping layer or capping layers including a material having an amorphous structure. Other described embodiments include capping layer(s) that contain element(s) having a first solid carbon solubility less than about 3. In multilayer capping feature embodiments, element(s) of the respective capping layers have different solid carbon solubility properties.

Abstract: Coated nanotubes and bundles of nanotubes are formed into membranes useful in optical assemblies in EUV photolithography systems. These optical assemblies are useful in methods for patterning materials on a semiconductor substrate. Such methods involve generating, in a UV lithography system, UV radiation. The UV radiation is passed through a coating layer of the optical assembly, e.g., a pellicle assembly. The UV radiation that has passed through the coating layer is passed through a matrix of individual nanotubes or matrix of nanotube bundles. UV radiation that passes through the matrix of individual nanotubes or matrix of nanotube bundles is reflected from a mask and received at a semiconductor substrate.

Abstract: A semiconductor device package and a method for manufacturing the semiconductor device package are provided. The semiconductor device package includes a first substrate, a second substrate disposed over the first substrate and having a first surface facing away from the first substrate and a second surface facing the first substrate, a first component disposed on the first surface of the second substrate, a second component disposed on the second surface of the second substrate; and a support member covering the first component.

Abstract: A light emitting substrate is provided. The light emitting substrate includes a plurality of light emitting controlling units arranged in M rows and N columns, M is an integer equal to or greater than one, N is an integer equal to or greater than one. A respective column of the N columns of light emitting controlling units includes M number of groups of second voltage signal lines, a respective group of the M number of groups of second voltage signal lines connected to a respective one of the M number of light emitting controlling units, the respective group of the M number of groups of second voltage signal lines including k number of second voltage signal lines, k is an integer equal to or greater than one.

Abstract: Electronic design automation (EDA) of the present disclosure logically places components of the electronic circuitry onto an electronic design real estate to determine an architectural design placement for the electronic circuitry. The EDA evaluates a metaheuristic algorithm starting with an initial placement of components of the electronic circuitry onto the electronic design real estate to provide multiple possible placements for placing these components of the electronic circuitry onto the electronic design real estate. The EDA utilizes the multiple possible placements of the metaheuristic algorithm to train one or more probabilistic functions of a model-based reinforcement learning (RL) algorithm. The EDA evaluates the model-based RL algorithm utilizing the one or more probabilistic functions to determine the architectural design placement.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a dielectric on wire structure is arranged directly over the interconnect wire. Outer sidewalls of the dielectric on wire structure are surrounded by the first interconnect dielectric layer. The integrated chip further includes a second interconnect dielectric layer arranged over the first interconnect dielectric layer, and an interconnect via that extends through the second interconnect dielectric layer and the dielectric on wire structure to contact the interconnect wire.

Abstract: A light emitting substrate, a method of driving a light emitting substrate, and a display device are provided. The light emitting substrate includes a plurality of light emitting units arranged in an array. Each light emitting unit includes a driving circuit, a plurality of light emitting elements, and a driving voltage terminal. The plurality of light emitting elements are sequentially connected in series and connected between the driving voltage terminal and the output terminal of the driving circuit. The driving circuit is configured to output a relay signal through the output terminal in a first period according to a first input signal received by the first input terminal and a second input signal received by the second input terminal, and supply a driving signal to the plurality of light emitting elements sequentially connected in series through the output terminal in a second period.