Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method includes: depositing a metal buffer layer on a substrate and within a feature disposed in a dielectric layer of the substrate. The buffer layer is deposited using a first physical vapor deposition (PVD) process at a chamber pressure of less than 500 mTorr while applying less than or equal to 0.08 watts/cm2 of RF bias power to the substrate if the chamber pressure is less than or equal to 3 mTorr and applying less than or equal to 0.8 watts/cm2 of RF bias power to the substrate if the chamber pressure is greater than 3 mTorr. A metal liner layer is deposited atop the buffer layer using a second PVD process at a chamber pressure of less than or equal to 3 mTorr while applying greater than 0.08 watts/cm2 of RF bias power to the substrate.

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: A method of metal gapfill including depositing a metal layer on a dielectric layer present on a field and/or in an opening of a feature via plasma enhanced atomic layer deposition utilizing a metal halide precursor and a plasma comprising hydrogen and a noble gas; and depositing a metal gapfill material on the field and in the opening directly over the metal layer, wherein the metal gapfill material completely fills the opening.

Abstract: The present disclosure generally provides methods of forming contact structures on semiconductor substrates. A metal layer is formed on a surface of a contact structure by maintaining a first temperature of a substrate and providing a first carrier gas, a first metal-containing precursor, and a first hydrogen-containing precursor to a first deposition chamber. The contact structure includes a feature. The feature includes an opening with a bottom surface and sidewalls, which comprise a dielectric material. The metal layer is formed over the sidewalls and the bottom surface and the metal layer comprises a metal and a silicon containing material. The metal layer is exposed to a metal chloride containing precursor to remove a top portion of the metal layer from the sidewalls. A metal gap fill material is deposited over the metal layer to fill the feature formed in the surface of the semiconductor substrate.

Abstract: A method and apparatus for tungsten gap-fill in semiconductor devices are provided. The method includes performing a gradient oxidation process to oxidize exposed portions of a liner layer, wherein the gradient oxidation process preferentially oxidizes an overhang portion of the liner layer, which obstructs or blocks top openings of one or more features formed within a field region of a substrate. The method further includes performing an etchback process to remove or reduce the oxidized overhang portion of the liner layer, exposing the liner layer to a chemical vapor transport (CVT) process to remove metal oxide remaining from the gradient oxidation process and the etchback process, and performing a tungsten gap-fill process to fill or partially fill the one or more features.

Abstract: Embodiments described herein relate to an apparatus that includes a dielectric plate with a first surface and a second surface opposite from the first surface. In an embodiment, a dielectric resonators on the second surface of the dielectric plate. In an embodiment, a coating is on the first surface of the dielectric plate, where the coating includes yttrium and/or zirconium.

Abstract: The present invention discloses a wind wheel, and a blower using the same. The wind wheel includes a wind wheel front disc, a wind wheel rear disc, and a plurality of main blades mounted and connected between the wind wheel front disc and wind wheel rear disc, wherein a wind inlet is provided in the middle of the wind wheel front disc; an air duct is formed between every two adjacent main blade; a connection seat for being connected to a rotating shaft of a motor is provided at the center of the wind wheel rear disc; a plurality of auxiliary blades protrude at positions inward from an edge of the wind wheel rear disc and are uniformly distributed around an axial direction; and the auxiliary blades and the main blades are respectively distributed on two sides of the wind wheel rear disc, wherein a plurality of curved blades protrude from the wind wheel rear disc and extend between the connection seat and auxiliary blades.

Abstract: Methods for forming tungsten gap fill on a feature. A method for forming tungsten gap fill in a feature can include: treating a first layer on a substrate having a portion of the first layer exposed through the feature; depositing a tungsten liner layer atop the treated portion of the first layer in the feature using a physical vapor deposition (PVD) process; and depositing a tungsten fill layer into the feature and atop the tungsten liner layer using a chemical vapor deposition (CVD) process.

Abstract: A method for calibrating constant torque of an ECM motor. The method is applied to replacing a legacy motor with a new motor. The method includes: a) selecting m torque reference points based on torque values of the legacy motor to form a desired torque value array LUT_X[m], where m is an integer?3; b) based on an actual torque of the new motor, identifying m torque adjustment points, where torque values of the torque adjustment points have a one-to-one correspondence with torque values of the torque reference points, to form a new target torque value array LUT_Y[m]; and c) receiving an externally input target torque T0, invoking a linear interpolation module function associated with the desired torque value array LUT_X[m] and the new target torque value array LUT_Y[m] to obtain a corresponding new torque target value T1, and allowing the new motor to operate under T1.

Abstract: A method and apparatus for a gap-fill in semiconductor devices are provided. The method includes forming a metal seed layer on an exposed surface of the substrate, wherein the substrate has features in the form of trenches or vias formed in a top surface of the substrate, the features having sidewalls and a bottom surface extending between the sidewalls. A gradient oxidation process is performed in a first process chamber to oxidize exposed portions of the metal seed layer to form a metal oxide, wherein the gradient oxidation process preferentially oxidizes a field region of the substrate over the bottom surface of the features. An etch back process is performed in the first process chamber removes or reduces the oxidized portion of the seed layer. A metal gap-fill process fills or partially fills the features with a gap fill material.

Abstract: A novel PWM control method is provided for an ECM motor. The ECM motor includes a motor controller and a motor unit. A microprocessor, an inverter circuit, and an interface circuit are provided on a motor control circuit board. The motor control circuit board is provided with a PWM input port, by means of which a PWM control signal from an external device is processed through the interface circuit and then input into the microprocessor. A plurality of sets of motor application parameters are stored in the motor controller, and the microprocessor detects a frequency of the input PWM signal, selects a corresponding set of motor application parameters based on the frequency of the input PWM signal, detects a duty cycle of the input PWM signal, and calculates a target operating value required for the motor based on the selected set of motor application parameters and the duty cycle.

Abstract: The present invention discloses a pressure measurement port assembly for an induced draft fan, and an induced draft fan using the same. The pressure measurement port assembly for an induced draft fan is disposed on a volute. The pressure measurement port assembly is provided with a pressure measurement through hole communicating an inner cavity of the volute with the outside, wherein the pressure measurement port assembly includes an air pipe mounting segment located on an outer side of the volute and an airflow introduction segment located in the inner cavity of the volute, and the airflow introduction segment includes a curved boss disposed on an outer periphery of the pressure measurement through hole, with an airflow introduction port formed between two opposite ends of the curved boss, thereby allowing airflow in the inner cavity of the volute to pass through the airflow introduction port to enter the pressure measurement through hole.

Abstract: Embodiments of the disclosure include apparatus and methods for plasma enhanced nucleation layer formations. A molybdenum-containing precursor (MCP) is injected into a processing chamber at a processing temperature less than or equal to 450 degrees Celsius. A plasma is generated from a precursor gas that includes hydrogen, or a reduction gas. A molybdenum nucleation layer is formed on a substrate within the processing chamber using the plasma and the MCP. A layer of molybdenum is deposited over the molybdenum nucleation layer.

Abstract: A wellbore staged operation method includes running, after a first well drifting operation is performed on a wellbore, a pipe string (100) in the wellbore, wherein the pipe string (100) includes, along a direction from bottom to top, a floating hoop (2), a plug seat (7), a toe-end sliding sleeve (3), and a fracturing sliding sleeve (4); performing a cementing operation, wherein cement slurry pumped into an inner chamber of the pipe string (100) enters an annulus between the pipe string and the wellbore through the plug seat (7) and the floating hoop (2) to form a cement sheath, the cement sheath isolating the toe-end sliding sleeve (3) from the fracturing sliding sleeve (4); performing a second drifting operation to ensure the toe-end sliding sleeve (3) of the pipe string (100) exposed; performing a pressure test for the pipe string; and performing staged fracturing constructions.

Abstract: The present disclosure provides methods for processing a semiconductor device substrate. A nucleation layer is deposited on a surface of a feature formed in a surface of a substrate by a first deposition process. The first deposition process including flowing a molybdenum-containing precursor and a reducing agent precursor gas into a processing chamber at a first flow rate ratio of about 1×10?8 to about 2×10?3 of molybdenum-containing precursor to reducing agent. At least a portion of the feature is filled with a molybdenum gap fill material by exposing the deposited nucleation layer feature to a second deposition process. The second deposition process including flowing the molybdenum-containing precursor and the reducing agent precursor gas into a processing chamber at a second flow rate ratio of about 2×10?5 to about 1×10?2 of molybdenum-containing precursor to reducing agent, wherein the second flow rate ratio is greater than the first flow rate ratio.

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of depositing tungsten in features of a substrate includes: depositing a seed layer consisting essentially of tungsten in the features via a physical vapor deposition (PVD) process; and depositing a bulk layer consisting essentially of tungsten in the features via a chemical vapor deposition (CVD) process to fill the features such that the deposition of the bulk layer is selective to within the features as compared to a field region of the substrate, wherein the CVD process is performed by flowing hydrogen gas (H2) at a first flow rate and a tungsten precursor at a second flow rate, and wherein the first flow rate is less than the second flow rate.

Abstract: A method of pre-cleaning in a semiconductor structure includes performing a plasma pre-treatment process to remove impurities from a surface of a semiconductor structure comprising a metal layer and a dielectric layer, performing a selective etch process to remove molybdenum oxide from a surface of the metal layer, the selective etch process comprising soaking the semiconductor structure in a precursor including molybdenum chloride (MoCl5, MoCl6) at a temperature of between 250° C. and 350° C., and performing a post-treatment process to remove chlorine residues and by-products of the selective etch process on the surface of the semiconductor structure.

Abstract: A method of selective metal removal via gradient oxidation for a gap-fill includes performing process cycles, each process cycle including placing a wafer having a semiconductor structure thereon into a first processing station, the semiconductor structure including a dielectric layer patterned with a feature formed therein and a seed layer formed on sidewalls and a bottom surface of the feature and a top surface of the dielectric layer, performing a reduction process on the wafer in the first processing station, performing a gradient oxidation process on the wafer in the second processing station, performing a gradient etch process on the wafer in the third processing station, and performing the gradient etch process on the wafer in the fourth processing station, wherein the first, second, third, and fourth processing stations are located in an interior volume of a processing chamber.

Abstract: Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

Abstract: Methods for producing a reduced contact resistance for cobalt-titanium structures. In some embodiments, a method comprises depositing a titanium layer using a chemical vapor deposition (CVD) process, depositing a first cobalt layer on the titanium nitride layer using a physical vapor deposition (PVD) process, and depositing a second cobalt layer on the first cobalt layer using a CVD process.