Abstract: Tag-guided image positioning method includes: defining a three-dimensional space coordinate system based on tag spatial position information obtained by identifying reference image(s) of a patient's body part disposed with reference tag(s), and position/direction data related to a medical device reference point (MDC)/direction (MDD); estimating a target coordinate in system representing a position of a target point based on three-dimensional medical image of patient's body part marked with target point and reference marker(s) corresponding to position(s) of reference tag(s) and reference coordinate(s) in system representing position(s) of reference tag(s); and outputting a positioning result as a basis for whether patient's body part should be adjusted based on a judgment result indicating whether or not in system a distance between target coordinate and a device coordinate representing a position of MDC and a pointing representing MDD are respectively consistent with a predetermined distance/medical device i

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).

Abstract: A pixel sensor may include a layer stack to reduce and/or block the effects of plasma and etching on a photodiode and/or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and/or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.

Abstract: A neutron capture therapy system and a target for a particle beam generating device, which may improve the heat dissipation performance of the target, reduce blistering and extend the service life of the target. The neutron capture therapy system includes a neutron generating device and a beam shaping assembly. The neutron generating device includes an accelerator and a target, and a charged particle beam generated by acceleration of the accelerator interacts with the target to generate a neutron beam. The target includes an acting layer, a backing layer and a heat dissipating structure, the acting layer interacts with the charged particle beam to generate the neutron beam, the backing layer supports the action layer, and the heat dissipating structure includes a tubular member composed of tubes arranged side by side.

Abstract: A radiation irradiation system including a radiation generating device and a carrying table, a beam generated by the radiation generating device irradiates an irradiated object on the carrying table, the radiation irradiation system further includes a carrying table positioning device, the carrying table is supported by the carrying table positioning device, the carrying table positioning device includes a positioning mechanism, the positioning mechanism includes a linear axis, the carrying table positioning device may horizontally move along the linear axis, and an extending direction of the linear axis is parallel to an irradiation direction of beams generated by the radiation generating device. In the positioning process of the carrying table, most of the carrying table positioning device is located in the space between the linear axis and the beam outlet, the radioactivity and life-span shortening caused by the radiation of the various components of the carrying table positioning device are reduced.

Abstract: A radiation treatment system and an operation procedure of an irradiation parameter verification device. The radiation treatment system comprises a radiation generation device, an irradiation chamber used for placing a patient, a carrying device used for transferring and bearing the patient, a collimator provided in the irradiation chamber, an irradiation parameter verification device used for determining whether the position of the patient is suitable for performing radiation irradiation treatment or not, and a collimator model, wherein the collimator comprises a collimator outlet; the collimator model comprises a collimator model outlet; the shape and the size of the collimator model outlet are the same as those of the collimator outlet, and the size of the collimator model in the direction perpendicular to the collimator model outlet is smaller than the size of the collimator in the direction perpendicular to the collimator outlet.

Abstract: An image sensor includes a first photodiode and a second photodiode. The image sensor further includes a first color filter over the first photodiode; and a second color filter over the second photodiode. The image sensor further includes a first microlens over the first color filter and a second microlens over the second color filter. The image sensor further includes a first electro-optical (EO) film between the first color filter and the first microlens, wherein a material of the first EO film is configured to change refractive index in response to application of an electrical field. The image sensor further includes a second EO film between the second color filter and the second microlens, wherein a material of the second EO film is configured to change refractive index in response to application of an electrical field.

Abstract: Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.

Abstract: An IC package comprising a substrate with a first vapor chamber; a semiconductor die with a top surface, the semiconductor die stacked over the substrate; wherein the first vapor chamber disposed under the semiconductor die, the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die; and an encapsulating case encapsulating the semiconductor die and the first vapor chamber, wherein the proximal portion of the first vapor chamber is within the encapsulating case, and the distal portion of the first vapor chamber outside the encapsulating case.

Abstract: A radiotherapy system and a therapy plan generation method therefor. The radiotherapy system includes a beam irradiation apparatus, a therapy plan module, and a control module. The beam irradiation apparatus generates a beam for therapy and irradiates an irradiated body to form an irradiated part. A tissue model template library of the irradiated body is stored in the therapy plan module; the therapy plan module performs dosage simulation calculation according to the tissue model template library, medical imaging data of the irradiated part, and a parameter of the beam for therapy generated by the beam irradiation apparatus, and generates a therapy plan. The control module retrieves, from the therapy plan module, the therapy plan corresponding to the irradiated body, and controls the beam irradiation apparatus to irradiate the irradiated body according to the therapy plan determined by the therapy plan generation method.

Abstract: A neutron capture therapy system is provided, including a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall forming a space for accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly. A support module is disposed in the concrete wall, the support module is capable of supporting the beam shaping assembly and is used to adjust the position of the beam shaping assembly, and the support module includes concrete and a reinforcing portion at least partially disposed in the concrete. The neutron capture therapy system designs a locally adjustable support for the beam shaping assembly, so that the beam shaping assembly can meet the precision requirement, improve the beam quality, and meet an assembly tolerance of the target.

Abstract: Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.

Abstract: The present invention provides a control method of a flash memory controller. By dividing a plurality of logical address to physical address mapping tables into multiple groups, establishing a group-to-physical address mapping table, a storage unit relationship table and a latest updated storage unit table to manage the flash memory controller, the times of loading the group-to-physical address mapping table into a buffer memory can be reduced, so as to improve the efficiency of the flash memory controller.

Abstract: Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.

Abstract: An array of nanoscale structures over photodiodes of a pixel array improves quantum efficiency (QE) for shorter wavelengths of light, such as green light and blue light. The nanoscale structures may be used without high absorption (HA) structures (e.g., when the pixel array is configured only for visible light) or may at least partially surround HA structures (e.g., when the pixel array is configured both for visible light and near infrared light). Additionally, the array of nanoscale structures may be formed using photolithography such that the nanoscale structures are approximately spaced at regular intervals. Therefore, QE for the pixel array is improved more than if the array of nanoscale structures were to be formed using a random (or quasi-random) process.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).

Abstract: A neutron capture therapy system may prevent deformation and damage of a material of a beam shaping assembly (20), thereby improving flux and quality of a neutron source. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20), where the neutron generating device (10) includes an accelerator (11) and a target (T), a charged particle beam (P) generated by acceleration of the accelerator (11) interacts with the target (T) to generate neutrons, the neutrons form a neutron beam (N), the neutron beam (N) defines a main axis (X); the beam shaping assembly (20) includes a moderator (231), a reflector (232), and a radiation shield (233); and the beam shaping assembly (20) further includes a frame (21) accommodating the moderator (231).