Abstract: A transmission channel switching method is provided. The transmission channel switching method may include the following steps. An apparatus may establish a plurality of transmission channels. The apparatus may transmit data through a default transmission channel of the transmission channels, wherein the default transmission channel corresponds to the lowest power consumption. The apparatus may determine whether to switch to another transmission channel of the transmission channels according to channel quality of each transmission channel and power consumption corresponds to each transmission channel.

Abstract: In the present disclosure, an engineered stone is provided. The engineered stone includes a first full-body stone pattern, a second full-body stone pattern and a printed stone pattern. The first full-body stone pattern includes a first stone formulation. The second full-body stone pattern includes a second stone formulation, and the second stone formulation is different from the first stone formulation, wherein the first full-body stone pattern and the second full-body stone pattern are located on a front surface, a plurality of side surfaces and a back surface opposite to the front surface of the engineered stone. The printed stone pattern is located on the front surface of the engineered stone, and the printed stone pattern is overlapped with the first full-body stone pattern and the second full-body stone pattern.

Abstract: A frequency reconfigurable phased array system comprises a signal generator outputting a power signal with an adjustable frequency, a plurality of radio frequency (RF) modules receiving the power signal, a control module generating excitation mode parameter sets and material processing event sets, a first database storing the excitation mode parameter sets, and a second database storing the material processing event sets. The control module generates a material processing schedule by selecting one of the material processing event sets based on a material recipe, an average power, and a total time of a material, and controls a signal frequency of the signal generator according to the material processing schedule and the excitation mode parameter sets, and a RF phase and a RF power of each of the RF modules, to have the RF modules generating a power signal.

Abstract: A lithium battery cell includes an upper cover module, a first battery electrode group, a second battery electrode group, and a plurality of first electrode connection straps. The first electrode connection straps are stacked together and have the same width and length. A first end of the first electrode connection straps is welded to a first tab, a second end of the first electrode connection straps is welded to a second tab, and a middle part of the first electrode connection straps is welded to a first electrode terminal. An even number of first bending parts are formed between the middle part and the first end, and an even number of second bending parts are formed between the middle part and the second end, and the first bending parts and the second bending parts are symmetrical to each other. Furthermore, a lithium battery cell manufacturing method is also disclosed therein.

Abstract: Provided is the use of an effective amount of alpha-enolase (enolase-1, ENO-1) antagonist in manufacturing a medicament for treating a fibrotic disease. ENO-1 antagonist significantly attenuated body weight loss and lung weight gain as well as the fibrosis lesion and collagen deposition in lungs. Also, ENO-1 antagonist significantly reduced cell migration and secretion of collagen and TGF-? in primary mouse lung myofibroblasts.

Abstract: A semiconductor device, and method of fabricating the same, includes a first substrate, the first substrate including at least one visible light photosensor disposed between a first side and a second side of the first substrate, a second substrate including an infrared light photosensor disposed between a second side of the second substrate and a first side of the second substrate, and a metalens disposed between the visible light photosensor and the infrared light photosensor, the metalens configured to focus infrared light impinging on a surface of the first substrate onto the infrared light photosensor.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: Tag-guided image positioning method includes: defining a three-dimensional space coordinate system based on tag spatial position information obtained by identifying reference image(s) of a patient's body part disposed with reference tag(s), and position/direction data related to a medical device reference point (MDC)/direction (MDD); estimating a target coordinate in system representing a position of a target point based on three-dimensional medical image of patient's body part marked with target point and reference marker(s) corresponding to position(s) of reference tag(s) and reference coordinate(s) in system representing position(s) of reference tag(s); and outputting a positioning result as a basis for whether patient's body part should be adjusted based on a judgment result indicating whether or not in system a distance between target coordinate and a device coordinate representing a position of MDC and a pointing representing MDD are respectively consistent with a predetermined distance/medical device i

Abstract: A semiconductor device includes a first conductive layer, a second conductive layer, a third conductive layer, a first organic layer, a first inorganic layer and a first silicon-containing layer. The third conductive layer is disposed between and electrically isolated from the first conductive layer and the second conductive layer. The first organic layer continuously covers the first conductive layer and the third conductive layer. The first inorganic layer is disposed over the first organic layer. The first silicon-containing layer is inserted between the first organic layer and the first inorganic layer, wherein the second conductive layer is disposed on and disposed in the first organic layer, the first silicon-containing layer and the first inorganic layer, to electrically connect to the first conductive layer.

Abstract: A data storage method, a host system, and a data storage system are disclosed. The method includes the following. An artificial intelligence (AI) model is executed. First data to be stored to a memory storage device is obtained. In response to the first data being generated by the AI model, second data is generated according to the first data, in which the second data includes the first data, and a data amount of the second data is greater than a data amount of the first data. A first write command is sent to the memory storage device according to the second data, so as to instruct the memory storage device to store the second data.

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).

Abstract: A lithium battery cell includes an upper cover module, a first battery electrode group, a second battery electrode group, and a plurality of first electrode connection straps. The first electrode connection straps are stacked together. A first end of the first electrode connection straps is welded to a first tab, a second end of the first electrode connection straps is welded to a second tab, and a middle part of the first electrode connection straps is welded to a first electrode terminal. An even number of first bending parts are formed between the middle part and the first end, and an even number of second bending parts are formed between the middle part and the second end, and the first bending parts and the second bending parts are symmetrical to each other. A lithium battery cell manufacturing method is also disclosed therein.

Abstract: A pixel sensor may include a layer stack to reduce and/or block the effects of plasma and etching on a photodiode and/or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and/or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.

Abstract: The present invention features methods and compositions for the intranasal, sublingual, and subcutaneous administration of bumetanide for the treatment of subjects suffering from edema refractory to oral diuretics.

Abstract: A radiation irradiation system including a radiation generating device and a carrying table, a beam generated by the radiation generating device irradiates an irradiated object on the carrying table, the radiation irradiation system further includes a carrying table positioning device, the carrying table is supported by the carrying table positioning device, the carrying table positioning device includes a positioning mechanism, the positioning mechanism includes a linear axis, the carrying table positioning device may horizontally move along the linear axis, and an extending direction of the linear axis is parallel to an irradiation direction of beams generated by the radiation generating device. In the positioning process of the carrying table, most of the carrying table positioning device is located in the space between the linear axis and the beam outlet, the radioactivity and life-span shortening caused by the radiation of the various components of the carrying table positioning device are reduced.

Abstract: A neutron capture therapy system and a target for a particle beam generating device, which may improve the heat dissipation performance of the target, reduce blistering and extend the service life of the target. The neutron capture therapy system includes a neutron generating device and a beam shaping assembly. The neutron generating device includes an accelerator and a target, and a charged particle beam generated by acceleration of the accelerator interacts with the target to generate a neutron beam. The target includes an acting layer, a backing layer and a heat dissipating structure, the acting layer interacts with the charged particle beam to generate the neutron beam, the backing layer supports the action layer, and the heat dissipating structure includes a tubular member composed of tubes arranged side by side.

Abstract: A radiation treatment system and an operation procedure of an irradiation parameter verification device. The radiation treatment system comprises a radiation generation device, an irradiation chamber used for placing a patient, a carrying device used for transferring and bearing the patient, a collimator provided in the irradiation chamber, an irradiation parameter verification device used for determining whether the position of the patient is suitable for performing radiation irradiation treatment or not, and a collimator model, wherein the collimator comprises a collimator outlet; the collimator model comprises a collimator model outlet; the shape and the size of the collimator model outlet are the same as those of the collimator outlet, and the size of the collimator model in the direction perpendicular to the collimator model outlet is smaller than the size of the collimator in the direction perpendicular to the collimator outlet.

Abstract: An image sensor includes a first photodiode and a second photodiode. The image sensor further includes a first color filter over the first photodiode; and a second color filter over the second photodiode. The image sensor further includes a first microlens over the first color filter and a second microlens over the second color filter. The image sensor further includes a first electro-optical (EO) film between the first color filter and the first microlens, wherein a material of the first EO film is configured to change refractive index in response to application of an electrical field. The image sensor further includes a second EO film between the second color filter and the second microlens, wherein a material of the second EO film is configured to change refractive index in response to application of an electrical field.

Abstract: Implementations described herein reduce electron-hole pair generation due to silicon dangling bonds in pixel sensors. In some implementations, the silicon dangling bonds in a pixel sensor may be passivated by silicon-fluorine (Si—F) bonding in various portions of the pixel sensor such as a transfer gate contact via or a shallow trench isolation region, among other examples. The silicon-fluorine bonds are formed by fluorine implantation and/or another type of semiconductor processing operation. In some implementations, the silicon-fluorine bonds are formed as part of a cleaning operation using fluorine (F) such that the fluorine may bond with the silicon of the pixel sensor. Additionally, or alternatively, the silicon-fluorine bonds are formed as part of a doping operation in which boron (B) and/or another p-type doping element is used with fluorine such that the fluorine may bond with the silicon of the pixel sensor.

Abstract: An IC package comprising a substrate with a first vapor chamber; a semiconductor die with a top surface, the semiconductor die stacked over the substrate; wherein the first vapor chamber disposed under the semiconductor die, the first vapor chamber comprises a proximal portion and a distal portion, the proximal portion of the first vapor chamber is thermally coupled to a bottom surface of the semiconductor die; and an encapsulating case encapsulating the semiconductor die and the first vapor chamber, wherein the proximal portion of the first vapor chamber is within the encapsulating case, and the distal portion of the first vapor chamber outside the encapsulating case.