Abstract: The present application provides an arthroscopic system, which comprises an disposable arthroscope having a distal end and a proximal end, and comprising a light source, a lens set, an image sensor, a transmitter, and a control interface. The present application eliminates the possibility of infecting the patient with contaminated devices by its cost-effectively disposable arthroscope. The present application also provides a method for image rotating in an arthroscopic system.

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

Abstract: A neutron moderation material for use in a BNCT beam shaping assembly. The neutron moderation material comprises three elements, i.e., Mg, Al, and F, wherein the mass fraction of the Mg element is 3.5%-37.1%, the mass fraction of the Al element is 5%-90.4%, and the mass fraction of the F element is 5.8%-67.2%; the sum of the weights of the Mg, Al, and F elements is 100% of the total weight of the neutron moderation material. The neutron moderation material may be doped with a small amount of 6Li-containing substances, and the addition of the 6Li-containing substances effectively decreases the content of ?-rays in epithermal neutron beams.

Abstract: Structures and formation methods of an image sensor structure are provided. The image sensor structure is provided. The image sensor structure includes a substrate, a photodiode component in the substrate, and a grid structure over the substrate. The grid structure includes a bottom dielectric element over the substrate, a reflective element over the bottom dielectric element, and an upper dielectric element over the reflective element. The reflective element has a sidewall which is anti-corrosive in a basic condition and an acidic condition. The image sensor structure also includes a color filter element over the substrate and surrounded by the grid structure. The color filter element is aligned with the photodiode component.

Abstract: Disclosed is a method for evaluating an irradiation angle of a beam, including a step of sampling the irradiation angle of the beam, wherein the irradiation angle of the beam is defined as being the direction of the vector of the irradiation point of the beam to the pre-set point of the tumor; and a step of calculating the track of the beam passing through the organs, wherein it is determined whether the tumor is fully covered within the effective treatment depth, and if so, entering the steps of calculating the evaluation coefficient, recording the irradiation conditions and calculating the results, and returning to the step of sampling the irradiation angle of the beam; and if not, entering the step of giving the worst evaluation coefficient and returning to the step of sampling the irradiation angle of the beam.

Abstract: The present disclosure provides a neutron capture therapy system including a beam shaping assembly. The beam shaping assembly includes a beam inlet; a neutron generator arranged into the beam shaping assembly, the neutron generator has nuclear reaction with an incident proton beam from the beam inlet to produce neutrons; a moderator adjacent to the neutron generator, the neutrons are moderated by the moderator to epithermal neutron energies; a reflector surrounding the neutron generator and the moderator, the reflector leads the deflected neutrons back to enhance epithermal neutron beam intensity; a beam outlet; and at least a movable member moving away from or close to the neutron generator, the movable member moves between a first position where the neutron generator is replaceable, and a second position where the neutron generator is irreplaceable. The neutron capture therapy system has a simple structure, and the neutron generator is easy to be replaced.

Abstract: The present application provides an arthroscopic system, which comprises an arthroscope having a distal end and a proximal end, a light source attached to the distal end of the arthroscope for providing a light, a lens attached to the distal end of the arthroscope for gathering the light, an image sensor set up next to the lens for generating digital raw data from the light, a transmitter set up between the distal end and the proximal end for transmitting the digital raw data toward the proximal end, a processing system attached to the proximal end for capturing and converting the digital raw data into digital video data and a video display device for displaying said digital video data. The present application eliminates the possibility of infecting the patient with contaminated devices by its cost-effectively disposable arthroscope. The present application also provides a method for image transmitting in an arthroscopic system.

Abstract: A neutron moderation material for use in a BNCT beam shaping assembly. The neutron moderation material comprises three elements, i.e., Mg, Al, and F, wherein the mass fraction of the Mg element is 3.5%-37.1%, the mass fraction of the Al element is 5%-90.4%, and the mass fraction of the F element is 5.8%-67.2%; the sum of the weights of the Mg, Al, and F elements is 100% of the total weight of the neutron moderation material. The neutron moderation material may be doped with a small amount of 6Li-containing substances, and the addition of the 6Li-containing substances effectively decreases the content of ?-rays in epithermal neutron beams.

Abstract: Abeam shaping assembly for neutron capture therapy includes a beam inlet, a target having nuclear reaction with an incident proton beam from the beam inlet to produce neutrons forming a neutron beam, a moderator adjoining to the target, a reflector surrounding the moderator. The neutrons are moderated to epithermal neutron energies by the moderator, and part of the moderator disposed on the back of the target can be replaced so as to adjust the epithermal neutron energies. The reflector leads the neutrons deviated from the main axis back.

Abstract: An oscillation device includes an oscillator and a logic circuit. The oscillator generates an output oscillation signal. The logic circuit controls the oscillator according to the output oscillation signal, such that the output oscillation signal includes two different oscillation periods. The oscillation device may be used as a temperature-to-frequency converter without any bandgap reference circuit.

Abstract: A shielding material for shielding radioactive ray and preparation method thereof. The shielding material consists of water, a cementing material, a fine aggregate material, a coarse aggregate material and an additive, wherein the fine aggregate material consists of a borosilicate glass powder and a barite sand, and the coarse aggregate material consists of a barite. A content of boron element in the borosilicate glass powder accounts for 0.5%-1% of the total weight of the shielding material. A content of barium sulfate in the barite sand and the barite accounts for 71%-75% of the total weight of the shielding material. Other contents include water, the cementing material and the additive, and a sum of contents of all components is 100% total weight of the shielding material.

Abstract: A beam shaping assembly for neutron capture therapy includes a beam inlet, a target having nuclear reaction with an incident proton beam from the beam inlet to produce neutrons forming a neutron beam, a moderator adjoining to the target, a reflector surrounding the moderator, a thermal neutron absorber adjoining to the moderator, a radiation shield arranged inside the beam shaping assembly and a beam outlet. The material of the moderator is subjected to a powder sintering process using a powder sintering device so as to change powders or a power compact into blocks. The reflector leads the neutrons deviated from the main axis back. The thermal neutron absorber is used for absorbing thermal neutrons so as to avoid overdosing in superficial normal tissue during therapy. The radiation shield is used for shielding leaking neutrons and photons so as to reduce dose of the normal tissue not exposed to irradiation.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.

Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate; a deep well disposed in the semiconductor substrate; a first doped region disposed in the deep well, wherein the first doped region contacts the buried layer; a conductive region having the first conductivity type surrounding and being adjacent to the first doped region, wherein the conductive region has a concentration higher than the first doped region; a first heavily doped region disposed in the first doped region; a well having a second conductivity type disposed in the deep well; a second heavily doped region disposed in the well; a gate disposed on the semiconductor substrate between the first heavily doped region and the second heavily doped region; and a first trench structure and a second trench structure, wherein a depth of the second trench structure is substantially deeper than a depth of the buried layer.

Abstract: A lateral double-diffused metal-oxide-semiconductor transistor device includes a substrate having at least a shallow trench isolation formed therein, an epitaxial layer encompassing the STI in the substrate, a gate, and a drain region and a source region formed in the substrate at respective two sides of the gate. The epitaxial layer, the source region and the drain region include a first conductivity type. The gate includes a first portion formed on the substrate and a second portion extending into the STI.

Abstract: A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.

Abstract: A wrench tool for screwdriver bits contains a body, a biasing member, and an elastic element. The body includes a tool seat received in an end portion thereof, the tool seat includes a fitting groove defined on a first end thereof and fitting with screwdriver bits, the fitting groove has a locking structure for retaining the screwdriver bits, and the tool seat further includes a second end communicating with the fitting groove. The biasing member is secured on the second end of the tool seat, the biasing member has a pushing portion fixed on a first end thereof and extending out of the fitting groove and has a pressing portion disposed on a second end thereof and pressed to push the screwdriver bits. The elastic element is mounted on the second end of the tool seat and used to push the biasing member to move back to an original position.

Abstract: A power array with a staggered arrangement for improving on-resistance and safe operating area of a device is provided. Each power array includes two or more rows with a plurality of parallel device units arranged along the row. Each device unit includes a source region, a drain region, and a gate disposed between the source region and the drain region, wherein each drain region is offset from the adjacent drain region of adjacent rows in a row direction.

Abstract: A lateral double-diffused metal-oxide-semiconductor transistor device includes a substrate having at least a shallow trench isolation formed therein, an epitaxial layer encompassing the STI in the substrate, a gate, and a drain region and a source region formed in the substrate at respective two sides of the gate. The epitaxial layer, the source region and the drain region include a first conductivity type. The gate includes a first portion formed on the substrate and a second portion extending into the STI.

Abstract: A power array with a staggered arrangement for improving on-resistance and safe operating area of a device is provided. Each power array includes two or more rows with a plurality of parallel device units arranged along the row. Each device unit includes a source region, a drain region, and a gate disposed between the source region and the drain region, wherein each drain region is offset from the adjacent drain region of adjacent rows in a row direction.