Abstract: A power array with a staggered arrangement for improving on-resistance and safe operating area of a device is provided. Each power array includes two or more rows with a plurality of parallel device units arranged along the row. Each device unit includes a source region, a drain region, and a gate disposed between the source region and the drain region, wherein each drain region is offset from the adjacent drain region of adjacent rows in a row direction.

Abstract: A method of fabricating a solar cell includes the following steps. At first, a substrate including a doped layer is provided. Subsequently, a patterned material layer partially overlapping the doped layer is formed on the substrate, and a first metal layer is conformally formed on the patterned material layer and the doped layer. Furthermore, a patterned mask layer totally overlapping the patterned material layer is formed on the first metal layer, and a second metal layer is formed on the doped layer not overlapped by the patterned material layer. Then, the patterned mask layer, the first metal layer between the patterned mask layer and the patterned material layer and a part of the patterned material layer are removed.

Abstract: A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.

Abstract: A method of fabricating a solar cell includes the following steps. At first, a substrate including a doped layer is provided. Subsequently, a patterned material layer partially overlapping the doped layer is formed on the substrate, and a first metal layer is conformally formed on the patterned material layer and the doped layer. Furthermore, a patterned mask layer totally overlapping the patterned material layer is formed on the first metal layer, and a second metal layer is formed on the doped layer not overlapped by the patterned material layer. Then, the patterned mask layer, the first metal layer between the patterned mask layer and the patterned material layer and a part of the patterned material layer are removed.

Abstract: A high voltage metal-oxide-semiconductor transistor device includes a substrate, at least an isolation structure formed in the substrate, a gate formed on the substrate, and a source region and a drain region formed in the substrate at respective sides of the gate. The isolation structure further includes a recess. The gate includes a first gate portion formed on a surface of the substrate and a second gate portion downwardly extending from the first gate portion and formed in the recess.

Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate; a deep well disposed in the semiconductor substrate; a first doped region disposed in the deep well, wherein the first doped region contacts the buried layer; a conductive region having the first conductivity type surrounding and being adjacent to the first doped region, wherein the conductive region has a concentration higher than the first doped region; a first heavily doped region disposed in the first doped region; a well having a second conductivity type disposed in the deep well; a second heavily doped region disposed in the well; a gate disposed on the semiconductor substrate between the first heavily doped region and the second heavily doped region; and a first trench structure and a second trench structure, wherein a depth of the second trench structure is substantially deeper than a depth of the buried layer.

Abstract: A wrench tool with a retaining device contains a body including a receiving cavity formed on at least one end thereof; a ratchet seat received in the receiving cavity of the body and including a plurality of teeth arranged around an outer surface thereof and a polygonal fitting segment fixed around an inner surface thereof, the fitting segment including a plurality of odd interior angles and a number of even interior angles, and between two adjacent interior angles of the fitting segment being provided with an adjoining wall, and the adjoining wall including two contacting faces formed on two sides thereof respectively; a ratchet device defined between the body and the ratchet seat and engaging with the teeth of the ratchet seat; a retaining device including a flexible engaging assembly disposed on the adjoining wall and extending over the two contacting faces.

Abstract: A fluid injector and method of manufacturing the same. The fluid injector comprises a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

Abstract: Methods for fabricating fluid injection devices. A patterned sacrificial layer is formed on a substrate. A patterned first structural layer is formed on the substrate covering the sacrificial layer. At least one fluid actuator is formed on the structural layer. A first passivation layer is formed on the first structural covering the at least one fluid actuator. An under bump metal (UBM) layer is conformably formed on the first passivation layer. A patterned first photoresist is formed at a predetermined nozzle site and a contact opening site exposes the UBM layer. A second structural layer is formed on the UBM layer. An etching protective layer is formed on the second structural layer. The first photoresist is removed creating an opening at the nozzle site exposing the UBM layer. The UBM layer in the opening is removed.

Abstract: A method for forming a fluid injection apparatus is disclosed. A patterned sacrificial layer is formed overlying a substrate. A electroplate seed layer is formed on the patterned sacrificial layer. A structural layer is formed overlying the electroplate seed layer and the substrate. The structural layer is patterned to form a nozzle. The electroplate seed layer in the nozzle is removed. The sacrificial layer is removed to form a fluid chamber. A protective layer is formed to selectively cover the structural layer and the electroplate seed layer.

Abstract: A method for fabricating a fluid injection micro device. The method includes the steps of providing a substrate with an insulating layer thereon. A heater is formed on the insulating layer. A patterned conductive layer is formed on the heater and the insulating layer. A protective layer is formed on the conductive layer to insulate the conductive layer. An opening is formed by sequentially etching the protective layer, the insulating layer and the substrate. A patterned thick film, having a defined chamber, is formed on the protective layer. The back of the substrate is removed and thinned until the opening forms a through hole.

Abstract: The fluid injector includes a base, a first through hole, a fluid actuator, a passivation layer, and a thick hydrophobic film. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The fluid actuator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The thick hydrophobic film formed of a crosslink defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

Abstract: A fluid ejection device includes a first substrate having a first crystal orientation, a second substrate having a second crystal orientation, bound to the first substrate, a manifold through the first and second substrates, a chamber formed in the second substrate, connected with the manifold, and a plurality of nozzles connecting to the chamber, wherein the first crystal orientation is different from the second crystal orientation. A method of fabricating the same is also disclosed.

Abstract: A fluid ejection device includes a first substrate having a first crystal orientation, a second substrate having a second crystal orientation, bound to the first substrate, a manifold through the first and second substrates, a chamber formed in the second substrate, connected with the manifold, and a plurality of nozzles connecting to the chamber, wherein the first crystal orientation is different from the second crystal orientation. A method of fabricating the same is also disclosed.

Abstract: A fluid injector and method of manufacturing the same. The fluid injector comprises a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

Abstract: Methods for fabricating fluid injection devices. A patterned sacrificial layer is formed on a substrate. A patterned first structural layer is formed on the substrate covering the sacrificial layer. At least one fluid actuator is formed on the structural layer. A first passivation layer is formed on the first structural covering the at least one fluid actuator. An under bump metal (UBM) layer is conformably formed on the first passivation layer. A patterned first photoresist is formed at a predetermined nozzle site and a contact opening site exposes the UBM layer. A second structural layer is formed on the UBM layer. An etching protective layer is formed on the second structural layer. The first photoresist is removed creating an opening at the nozzle site exposing the UBM layer. The UBM layer in the opening is removed.

Abstract: A method for fabricating a monolithic fluid injection device. The method includes providing a substrate with a patterned sacrificial layer thereon. Next, a patterned support layer and a patterned resistive layer, as a heating element, are formed on the substrate sequentially. A patterned insulating layer having a heating element contact via and a first opening is formed on the support layer. A patterned conductive layer is formed on the support layer and fills the heating element contact via as a signal transmitting circuit. A patterned protective layer having a signal transmitting circuit contact via and a second opening corresponding to the first opening is formed on the substrate. A manifold is formed by wet etching the back of the substrate to expose the sacrificial layer. A chamber is formed by removing the sacrificial layer in the wet etching process. Finally, an opening connecting the chamber is formed by etching the support layer along the second opening.

Abstract: A method for fabricating a monolithic fluid injection device. The method includes providing a substrate with a patterned sacrificial layer thereon. Next, a patterned support layer and a patterned resistive layer, as a heating element, are formed on the substrate sequentially. A patterned insulating layer having a heating element contact via and a first opening is formed on the support layer. A patterned conductive layer is formed on the support layer and fills the heating element contact via as a signal transmitting circuit. A patterned protective layer having a signal transmitting circuit contact via and a second opening corresponding to the first opening is formed on the substrate. A manifold is formed by wet etching the back of the substrate to expose the sacrificial layer. A chamber is formed by removing the sacrificial layer in the wet etching process. Finally, an opening connecting the chamber is formed by etching the support layer along the second opening.

Abstract: A fluid injector and method of manufacturing the same. The fluid injector includes a base, a first through hole, a bubble generator, a passivation layer, and a metal layer. The base includes a chamber and a surface. The first through hole communicates with the chamber, and is disposed in the base. The bubble generator is disposed on the surface near the first through hole, and is located outside the chamber. The passivation layer is disposed on the surface. The metal layer defines a second through hole, and is disposed on the passivation layer outside the chamber. The second through hole communicates with the first through hole.

Abstract: Fluid injection devices and fabrication methods thereof. A first structural layer is disposed on a substrate. A fluid chamber is disposed between the substrate and the first structural layer. At least one bubble generator is disposed on the first structural layer and on the opposite side of the fluid chamber. A first passivation layer is disposed on the first structural layer covering the bubble generator. A second structural layer is disposed on the passivation layer. A second passivation layer is conformably deposited on the second passivation layer. A nozzle adjacent to the bubble generator passes through the second passivation layer, the second structural layer, the first passivation layer, and the first structural layer communicating the fluid chamber, wherein the sidewall of the nozzle is made of the first structural, the first passivation layer and the second passivation layer.