Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).

Abstract: A neutron capture therapy system may prevent deformation and damage of a material of a beam shaping assembly (20), thereby improving flux and quality of a neutron source. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20), where the neutron generating device (10) includes an accelerator (11) and a target (T), a charged particle beam (P) generated by acceleration of the accelerator (11) interacts with the target (T) to generate neutrons, the neutrons form a neutron beam (N), the neutron beam (N) defines a main axis (X); the beam shaping assembly (20) includes a moderator (231), a reflector (232), and a radiation shield (233); and the beam shaping assembly (20) further includes a frame (21) accommodating the moderator (231).

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).

Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: A neutron capture therapy system is provided, including a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall forming a space for accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly. A support module is disposed in the concrete wall, the support module is capable of supporting the beam shaping assembly and is used to adjust the position of the beam shaping assembly, and the support module includes concrete and a reinforcing portion at least partially disposed in the concrete. The neutron capture therapy system designs a locally adjustable support for the beam shaping assembly, so that the beam shaping assembly can meet the precision requirement, improve the beam quality, and meet an assembly tolerance of the target.

Abstract: A semiconductor image-sensing structure includes a semiconductor substrate having a front side and a back side, a photo-sensing element disposed in the semiconductor substrate, a color filter disposed over the back side of the semiconductor substrate, and an electric-optical modulator disposed between the color filter and the photo-sensing element. The electric-optical modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens between the first electrode and the second electrode.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.

Abstract: An IC package comprises a substrate; a semiconductor die with a top surface, wherein the semiconductor die is stacked over the substrate; a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion, the proximal portion covers the top surface of the semiconductor die; and an encapsulating case encapsulating the substrate, the semiconductor die and the vapor chamber, wherein the proximal portion of the vapor chamber is within the encapsulating case, and the distal portion of the vapor chamber extends from a wall of the encapsulating case.

Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: A pixel sensor may include a main deep trench isolation (DTI) structure and one or more sub-DTI structures in a substrate of the pixel sensor to increase the quantum efficiency of the pixel sensor at large incident angles. The one or more sub-DTI structures may be located within the perimeter of the main DTI structure and above a photodiode. The one or more sub-DTI structures may be configured to provide a path of travel for incident light into the photodiode from large incident angles in that the one or more sub-DTI structures may be filled with an oxide material to increase light penetration into the one or more sub-DTI structures. This may reduce reflections at a top surface of the substrate, thereby permitting incident light to refract into the substrate and toward the photodiode.

Abstract: A pixel sensor may include a layer stack to reduce and/or block the effects of plasma and etching on a photodiode and/or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and/or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.

Abstract: A neutron capture therapy system is provided, including a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall forming a space for accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly. A support module is disposed in the concrete wall, the support module is capable of supporting the beam shaping assembly and is used to adjust the position of the beam shaping assembly, and the support module includes concrete and a reinforcing portion at least partially disposed in the concrete. The neutron capture therapy system designs a locally adjustable support for the beam shaping assembly, so that the beam shaping assembly can meet the precision requirement, improve the beam quality, and meet an assembly tolerance of the target.

Abstract: A radiotherapy system and a therapy plan generation method therefor. The radiotherapy system includes a beam irradiation apparatus, a therapy plan module, and a control module. The beam irradiation apparatus generates a beam for therapy and irradiates an irradiated body to form an irradiated part. A tissue model template library of the irradiated body is stored in the therapy plan module; the therapy plan module performs dosage simulation calculation according to the tissue model template library, medical imaging data of the irradiated part, and a parameter of the beam for therapy generated by the beam irradiation apparatus, and generates a therapy plan. The control module retrieves, from the therapy plan module, the therapy plan corresponding to the irradiated body, and controls the beam irradiation apparatus to irradiate the irradiated body according to the therapy plan determined by the therapy plan generation method.

Abstract: The invention provides a radiotherapy system and a method for controlling safety interlock thereof. The radiotherapy system includes a beam generating apparatus, which includes a charged particle beam generating apparatus and a neutron beam generating portion interacting with a charged particle beam generated by the charged particle beam generating apparatus to generate a therapeutic neutron beam to irradiate into a first irradiation chamber. In operation, the radiotherapy system determines whether there is a safety problem by a beam control module according to the received operation data of the charged particle beam generating apparatus or by a system control module according to the received operation data of the radiotherapy system, and the beam control module or the system control module controls the charged particle beam generating apparatus through the beam control module, to generate the charged particle beam or not, or interact with the neutron beam generating portion.

Abstract: A neutron capture treatment device includes a neutron beam irradiation system, a detection system, and a correction system, the neutron beam irradiation system being used for producing neutron beams, the detection system being used for detecting irradiation parameters during the neutron beam irradiation treatment, and the correction system being used for correcting a preset neutron dosage; the accuracy of the neutron beam dosage irradiated to a sick body is thereby ensured at the source.