Patents by Inventor Wei Ni
Wei Ni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250092107Abstract: The present invention relates to neuregulin (NRG) 4 compounds and methods of treatment with NRG4 compounds.Type: ApplicationFiled: September 19, 2024Publication date: March 20, 2025Inventors: Jonathan Wesley DAY, Josef George HEUER, Avinash MUPPIDI, Wei NI, James David PANCOOK
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Publication number: 20250044294Abstract: The present invention is related to a use of prochlorperazine (PCP), or analog thereof for treating a cancer in a subject by influencing membrane proteins and receptors and inducing alterations in the expressions of the surface marker on cancer cells and their derived extracellular vesicles. The invention method offers a novel approach for the treatment and diagnosis of cancer and metastasis. Specific surface markers serve as a potential candidate for cancer-associated extracellular vesicles (EVs) and have applications in diagnosis, prognosis, and therapeutic targeting.Type: ApplicationFiled: July 31, 2024Publication date: February 6, 2025Applicant: National Yang Ming Chiao Tung UniversityInventors: Chi-Ying HUANG, Wei-Ni TSAI, Cayla SOLOMON, Tai-Shan CHENG, Ming-Hsi CHUANG, Ly James LEE, Peter Mu-Hsin CHANG, Yu-Tang HUANG, Thi Tuong Linh NGUYEN, Yi-Ning LO
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Publication number: 20250037865Abstract: According to embodiments of the present disclosure, there is provided a solution for medical data processing. In this solution, a first set of entities and a second set of entities are respectively extracted from a first medical report and a second medical report related to a patient. A semantic correlation is determined between the first set of entities and the second set of entities. A concordance level between medical information in the first medical report and medical information of the second medical report is determined based on the semantic correlation. In this way, the cross-report concordance analysis can be automatically conducted based on semantic correlation of entities extracted from the reports.Type: ApplicationFiled: November 25, 2022Publication date: January 30, 2025Inventors: Wei NI, En OUYANG, Ken CHEN, Binyang HU, Liang TAO
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Publication number: 20250037264Abstract: The present disclosure provides a lug defect detection method and system. The detection method includes during a preparation process of a battery cell, collecting original image of a relevant area of lug; in a digitally processed original image, setting a baseline based on an edge position of the pole piece body, and from the baseline, setting a side close to the pole piece body as a first detection area, setting another side away from the pole piece body as a second detection area; and detecting a target lug image in the first detection region and the second detection region according to a preset sequence, and determining whether a currently detected cell is a defective cell.Type: ApplicationFiled: June 14, 2024Publication date: January 30, 2025Inventors: Hui CAO, Shiming WU, Wei NI, Linsheng CAI, Hui WANG, Shaoke ZHANG
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Patent number: 12145972Abstract: The present invention relates to neuregulin (NRG) 4 compounds and methods of treatment with NRG4 compounds.Type: GrantFiled: December 22, 2021Date of Patent: November 19, 2024Assignee: ELI LILLY AND COMPANYInventors: Jonathan Wesley Day, Josef George Heuer, Avinash Muppidi, Wei Ni, James David Pancook
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Patent number: 12068411Abstract: A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.Type: GrantFiled: March 26, 2018Date of Patent: August 20, 2024Assignees: NISSAN MOTOR CO., LTD., RENAULT S. A. S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Keisuke Takemoto
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Patent number: 11996442Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.Type: GrantFiled: September 14, 2022Date of Patent: May 28, 2024Assignees: NISSAN MOTOR CO., LTD., RENAULT s.a.s.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Keisuke Takemoto
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Patent number: 11973135Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.Type: GrantFiled: February 6, 2018Date of Patent: April 30, 2024Assignee: NISSAN MOTOR CO., LTD.Inventors: Keisuke Takemoto, Tetsuya Hayashi, Wei Ni, Toshiharu Marui, Ryouta Tanaka, Shigeharu Yamagami
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Patent number: 11973108Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.Type: GrantFiled: December 1, 2020Date of Patent: April 30, 2024Assignees: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Wei Ni, Tetsuya Hayashi, Keiichiro Numakura, Toshiharu Marui, Ryouta Tanaka, Yuichi Iwasaki
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Publication number: 20240055475Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.Type: ApplicationFiled: December 1, 2020Publication date: February 15, 2024Applicants: NISSAN MOTOR CO., LTD., RENAULT s.a.s.Inventors: Wei NI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Toshiharu MARUI, Ryouta TANAKA, Yuichi IWASAKI
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Patent number: 11881526Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.Type: GrantFiled: November 9, 2020Date of Patent: January 23, 2024Assignees: Nissan Motor Co., Ltd., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Yuichi Iwasaki
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Publication number: 20230411516Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.Type: ApplicationFiled: November 9, 2020Publication date: December 21, 2023Applicants: Nissan Motor Co., Ltd., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Yuichi Iwasaki
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Patent number: 11756994Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.Type: GrantFiled: September 14, 2022Date of Patent: September 12, 2023Assignees: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Keisuke Takemoto
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Publication number: 20230253512Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicants: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Toshiharu MARUI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Wei NI, Ryota TANAKA
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Patent number: 11664466Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.Type: GrantFiled: August 1, 2018Date of Patent: May 30, 2023Assignees: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka
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Publication number: 20230074093Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.Type: ApplicationFiled: September 14, 2022Publication date: March 9, 2023Applicants: NISSAN MOTOR CO., LTD., RENAULT s.a.s.Inventors: Toshiharu MARUI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Wei NI, Ryota TANAKA, Keisuke TAKEMOTO
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Publication number: 20230063711Abstract: A method for displaying item information includes: displaying by an audience terminal, category information corresponding to a combined item object and an interaction operation control on an item display interface of a live broadcast room, in which the interaction operation control is configured to view basic information of sub-item objects and the combined item object includes at least two sub-item objects of the same category; in response to a trigger operation of the interaction operation control, determining by the audience terminal, a target sub-item object matching specified geographic information of the audience terminal from the at least two sub-item objects; and displaying by the audience terminal, basic information corresponding to the target sub-item object on the item display interface.Type: ApplicationFiled: April 4, 2022Publication date: March 2, 2023Inventors: Peng Liu, Zhiguo Liu, Haolei Yang, Yayun Zuo, Zhenhang Ning, Wei Gao, Kai Yang, Zhuai Wang, Jifeng Yao, Guangyuan Lu, Zhen Ma, Wei Ni
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Patent number: D998404Type: GrantFiled: July 28, 2022Date of Patent: September 12, 2023Assignees: Plastic Hardware Co., Ltd., FREE-FREE INDUSTRIAL CORPInventors: Wei Ni Tu, Chien Hua Liao
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Patent number: D1008145Type: GrantFiled: December 23, 2021Date of Patent: December 19, 2023Assignee: IMPACT WHEELSInventor: Wei Ni
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Patent number: D1054951Type: GrantFiled: February 17, 2021Date of Patent: December 24, 2024Inventor: Wei Ni