Patents by Inventor Wei Ni
Wei Ni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11938521Abstract: A method of cleaning a semiconductor wafer includes: loading a semiconductor wafer into a cell having an annular trough; moving a plurality of nozzles into operational orientations for spraying a cleaning solution onto a top surface of the loaded semiconductor wafer; spraying the cleaning solution from each nozzle onto the top surface of the loaded semiconductor wafer in a direction defined by each nozzle's operational orientation such that a patterned flow of cleaning solution is formed on the top surface of the loaded semiconductor wafer; and collecting the cleaning solution in the annular trough of the cell as it flows off the top surface of the loaded semiconductor wafer.Type: GrantFiled: February 2, 2022Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuang-Wei Cheng, Cheng-Lung Wu, Chyi-Tsong Ni
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Publication number: 20240091561Abstract: A radiation therapy system is disclosed. The radiation therapy system includes a gantry, a first radiation source, and a second radiation source. The gantry is configured to have a cavity extending in a direction along a rotation axis, and the cavity is configured to house a target object. The first radiation source is mounted on the gantry, and configured to emit a treatment beam to a treatment area of the target object. The second radiation source is mounted on the gantry, and configured to emit an imaging beam to an imaging area of the target object. The treatment area partially overlaps the imaging area. A rotation plane of the first radiation source and a rotation plane of the second radiation source are distributed in a direction along the rotation axis.Type: ApplicationFiled: September 18, 2023Publication date: March 21, 2024Inventors: CAN LIAO, BO CAI, LING-QING MEI, ZHI-DU ZHANG, CHENG NI, WEI ZHANG
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Publication number: 20240096781Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.Type: ApplicationFiled: March 20, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
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Publication number: 20240084454Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Yung-Tsun LIU, Kuang-Wei CHENG, Sheng-chun YANG, Chih-Tsung LEE, Chyi-Tsong NI
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Publication number: 20240088145Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.Type: ApplicationFiled: November 27, 2023Publication date: March 14, 2024Inventors: Zhi-Chang Lin, Wei-Hao Wu, Jia-Ni Yu, Chih-Hao Wang, Kuo-Cheng Ching
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Publication number: 20240082846Abstract: A gene sequencing reaction device, a gene sequencing system and a gene sequencing reaction method. The gene sequencing reaction device includes: a supporting platform; a dipping container disposed on the supporting platform, wherein the dipping container has a dipping reaction area, and the dipping reaction area is configured to hold a chemical reagent for gene sequencing reaction, so as to dip a sequencing chip having a DNA sample loading structure on the surface and having a DNA sample loaded thereon in the chemical reagent to perform a gene sequencing reaction; a temperature control apparatus, configured to control the temperature of the chemical reagent in the dipping reaction area; and a transfer apparatus, configured to insert the sequencing chip into the dipping reaction area or pull out the sequencing chip from the dipping reaction area.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: MGI Tech Co., LTD.Inventors: Wei Ma, Xun Xu, Jiabo Wu, Ming Ni, Dong Wei, Jiansheng Tang
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Patent number: 11929267Abstract: An ultraviolet (UV) lamp assembly of a UV curing tool is provided for curing a low dielectric constant (low-k) material layer of a semiconductor wafer. The UV lamp assembly includes: a UV lamp which emits UV light; a first reflector arranged proximate to a first side of the UV lamp, the first reflector including a first surface facing the UV lamp from which UV light emitted by the UV lamp is at least partially reflected; and a UV reflective coating partially coating the first surface of the reflector. Suitably, a plurality of areas of the first surface of the reflector remain uncoated with the UV reflective coating and the plurality of uncoated areas are arranged to promote a uniform exposure of the semiconductor wafer to UV irradiation.Type: GrantFiled: August 17, 2022Date of Patent: March 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Chun Hu, Kuang-Wei Cheng, Chyi-Tsong Ni
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Patent number: 11920315Abstract: Disclosed is a wireless detection device for quickly positioning a throw-fill stone falling depth and long-term settlement in blasting silt-squeezing construction, including a gravity ball and a signal receiving, processing and controlling system. The gravity ball is internally provided with test mechanisms, signal collecting and transmitting apparatuses and batteries. Also disclosed is a wireless detection method implemented using the above wireless detection device. The device and the method can detect the throw-fill stone falling depth and distribution situation in a blasting silt-squeezing construction process in real time, so that the effect evaluation and quality control of blasting silt-squeezing can be monitored in real time, the situation that the falling of throw-fill stones is incomplete can be acquired in time, monitoring data support can be provided for corresponding processing measures, and long-term settlement and other monitoring can be carried out.Type: GrantFiled: October 26, 2021Date of Patent: March 5, 2024Assignee: WENZHOU UNIVERSITYInventors: Jun Wang, Wei Qin, Liujun Zhang, Junfeng Ni, Ziyang Gao, Yonggang Hu, Chaohao Pan, Jinrong Zhang, Xudong Dong
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Publication number: 20240070232Abstract: Methods and systems for training a model include determining class prototypes of time series samples from a training dataset. A task corresponding to the time series samples is encoded using the class prototypes and a task-level configuration. A likelihood value is determined based on outputs of a time series density model, a task-class distance from a task embedding model, and a task density model. Parameters of the time series density model, the task embedding model, and the task density model are adjusted responsive to the likelihood value.Type: ApplicationFiled: August 21, 2023Publication date: February 29, 2024Inventors: Wei Cheng, Jingchao Ni, Liang Tong, Haifeng Chen, Yizhou Zhang
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Patent number: 11913324Abstract: An apparatus for downhole multi-dimensional imaging includes an acquisition unit configured to acquire a formation resistivity signal, an ultrasonic echo signal and an orientation signal regularly; a sector calculation unit configured to calculate, based on said orientation signal, a sector where a currently acquired signal is from; and a multi-dimensional imaging unit, configured to calculate, based on the signals acquired by the acquisition unit, data of resistivity, distance from a drilling tool to a borehole wall and ultrasonic echo amplitude, and distribute said data into all sectors for feature recognition and extraction, thus obtaining key features characterizing a current formation being drilled, said key features being transmitted to ground for guiding drilling process. The structural complexity and the length of the downhole imaging measurement instrument can be reduced, and feature recognition can be directly performed on the imaging data underground.Type: GrantFiled: August 26, 2020Date of Patent: February 27, 2024Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, SINOPEC RESEARCH INSTITUTE OF PETROLEUM ENGINEERINGInventors: Yijin Zeng, Wei Zhang, Weining Ni, Xin Li, Lipeng Yan, Jinping Wu, Yuefa Hu, Lishuang Wang, Zuyang Zhu, Jintai Mi
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Publication number: 20240055475Abstract: A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.Type: ApplicationFiled: December 1, 2020Publication date: February 15, 2024Applicants: NISSAN MOTOR CO., LTD., RENAULT s.a.s.Inventors: Wei NI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Toshiharu MARUI, Ryouta TANAKA, Yuichi IWASAKI
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Patent number: 11881526Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.Type: GrantFiled: November 9, 2020Date of Patent: January 23, 2024Assignees: Nissan Motor Co., Ltd., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Yuichi Iwasaki
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Publication number: 20230411516Abstract: A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.Type: ApplicationFiled: November 9, 2020Publication date: December 21, 2023Applicants: Nissan Motor Co., Ltd., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Yuichi Iwasaki
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Patent number: 11756994Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.Type: GrantFiled: September 14, 2022Date of Patent: September 12, 2023Assignees: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka, Keisuke Takemoto
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Publication number: 20230253512Abstract: A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicants: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Toshiharu MARUI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Wei NI, Ryota TANAKA
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Patent number: 11664466Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.Type: GrantFiled: August 1, 2018Date of Patent: May 30, 2023Assignees: NISSAN MOTOR CO., LTD., RENAULT S.A.S.Inventors: Toshiharu Marui, Tetsuya Hayashi, Keiichiro Numakura, Wei Ni, Ryota Tanaka
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Publication number: 20230074093Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.Type: ApplicationFiled: September 14, 2022Publication date: March 9, 2023Applicants: NISSAN MOTOR CO., LTD., RENAULT s.a.s.Inventors: Toshiharu MARUI, Tetsuya HAYASHI, Keiichiro NUMAKURA, Wei NI, Ryota TANAKA, Keisuke TAKEMOTO
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Publication number: 20230063711Abstract: A method for displaying item information includes: displaying by an audience terminal, category information corresponding to a combined item object and an interaction operation control on an item display interface of a live broadcast room, in which the interaction operation control is configured to view basic information of sub-item objects and the combined item object includes at least two sub-item objects of the same category; in response to a trigger operation of the interaction operation control, determining by the audience terminal, a target sub-item object matching specified geographic information of the audience terminal from the at least two sub-item objects; and displaying by the audience terminal, basic information corresponding to the target sub-item object on the item display interface.Type: ApplicationFiled: April 4, 2022Publication date: March 2, 2023Inventors: Peng Liu, Zhiguo Liu, Haolei Yang, Yayun Zuo, Zhenhang Ning, Wei Gao, Kai Yang, Zhuai Wang, Jifeng Yao, Guangyuan Lu, Zhen Ma, Wei Ni
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Patent number: D998404Type: GrantFiled: July 28, 2022Date of Patent: September 12, 2023Assignees: Plastic Hardware Co., Ltd., FREE-FREE INDUSTRIAL CORPInventors: Wei Ni Tu, Chien Hua Liao
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Patent number: D1008145Type: GrantFiled: December 23, 2021Date of Patent: December 19, 2023Assignee: IMPACT WHEELSInventor: Wei Ni