Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A method for displaying item information includes: displaying by an audience terminal, category information corresponding to a combined item object and an interaction operation control on an item display interface of a live broadcast room, in which the interaction operation control is configured to view basic information of sub-item objects and the combined item object includes at least two sub-item objects of the same category; in response to a trigger operation of the interaction operation control, determining by the audience terminal, a target sub-item object matching specified geographic information of the audience terminal from the at least two sub-item objects; and displaying by the audience terminal, basic information corresponding to the target sub-item object on the item display interface.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.

Abstract: A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A disc-type three-degree-of-freedom magnetic suspension switched reluctance motor includes a stator and a double-disc rotor. The stator includes an axial stator core, a permanent magnet ring, and a radial stator core coaxially connected to each other in sequence from outside to inside. Axial suspension teeth are distributed on two axial ends of the axial stator core, several axial torque teeth are evenly distributed between adjacent axial suspension teeth by axial magnetic isolation blocks, and axial suspension windings and axial torque windings are respectively wound on the axial suspension teeth and the axial torque teeth. Radial suspension teeth are distributed on the inner circumference of the radial stator core, radial torque teeth are evenly distributed between adjacent radial suspension teeth by a radial magnetic isolation block, and a radial suspension winding and a radial torque winding are respectively wound on the radial suspension teeth and the radial torque teeth.

Abstract: The present invention relates to neuregulin (NRG) 4 compounds and methods of treatment with NRG4 compounds.

Abstract: A three-degree-of-freedom bearingless switched reluctance motor excited by a constant current source includes a rotor and a stator. The rotor consisting of a rotating shaft and a rotor core, where a plurality of rotor teeth is uniformly distributed on an outer circumference of the rotor core. The stator includes a stator core, a magnetic isolation ring, an axial suspension winding, and a magnetic conduction ring that are sequentially connected, and axial control cores and annular constant current source windings which are symmetrically arranged on both sides of the stator core. Outer edges of the axial control cores are connected to the magnetic conduction ring, and inner edges extend to the rotor core. The stator core and the magnetic isolation ring both consist of an axial part and a radial part of which an outer end is connected to an inner wall of the axial part.

Abstract: A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

Abstract: The present invention relates to neuregulin (NRG) 4 compounds and methods of treatment with NRG4 compounds.

Abstract: The present application discloses an exposure method and an exposure device thereof. The method includes the following steps: confirming a position of a point to be exposed; capturing and confirming that the point to be exposed is successfully captured; adjusting a light source corresponding to the successfully captured point to be exposed to an adaptive position; and completing an exposure operation by an exposure machine.

Abstract: A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

Abstract: A three-degree-of-freedom bearingless switched reluctance motor excited by a constant current source includes a rotor and a stator. The rotor consisting of a rotating shaft and a rotor core, where a plurality of rotor teeth is uniformly distributed on an outer circumference of the rotor core. The stator includes a stator core, a magnetic isolation ring, an axial suspension winding, and a magnetic conduction ring that are sequentially connected, and axial control cores and annular constant current source windings which are symmetrically arranged on both sides of the stator core. Outer edges of the axial control cores are connected to the magnetic conduction ring, and inner edges extend to the rotor core. The stator core and the magnetic isolation ring both consist of an axial part and a radial part of which an outer end is connected to an inner wall of the axial part.

Abstract: A semiconductor device includes: a substrate; a semiconductor layer disposed on a main surface of the substrate; and a first main electrode and a second main electrode, which are disposed on the substrate separately from each other with the semiconductor layer sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer includes: a first conductivity-type drift region through which a main current flows; a second conductivity-type column region that is disposed inside the drift region and extends in parallel to a current path; and an electric field relaxation region that is disposed in at least a part between the drift region and the column region and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Abstract: A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

Abstract: A disc-type three-degree-of-freedom magnetic suspension switched reluctance motor includes a stator and a double-disc rotor. The stator includes an axial stator core, a permanent magnet ring, and a radial stator core coaxially connected to each other in sequence from outside to inside. Axial suspension teeth are distributed on two axial ends of the axial stator core, several axial torque teeth are evenly distributed between adjacent axial suspension teeth by axial magnetic isolation blocks, and axial suspension windings and axial torque windings are respectively wound on the axial suspension teeth and the axial torque teeth. Radial suspension teeth are distributed on the inner circumference of the radial stator core, radial torque teeth are evenly distributed between adjacent radial suspension teeth by a radial magnetic isolation block, and a radial suspension winding and a radial torque winding are respectively wound on the radial suspension teeth and the radial torque teeth.

Abstract: The present application discloses an exposure method and an exposure device thereof. The method includes the following steps: confirming a position of a point to be exposed; capturing and confirming that the point to be exposed is successfully captured; adjusting a light source corresponding to the successfully captured point to be exposed to an adaptive position; and completing an exposure operation by an exposure machine.

Abstract: A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.