Abstract: A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

Abstract: A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.

Abstract: An inductor includes a substrate as a base material, a core portion, a coil portion, an insulating portion formed between conductors of the coil portion, and a terminal portion connecting the core portion and the coil portion to the outside. A main direction of a magnetic field that is generated in accordance with current flowing through the coil portion extends in a planar direction of the substrate. In at least a portion of the coil portion, both width and thickness of a rectangular cross-sectional area of the coil portion are larger than the width of the insulating portion.

Abstract: A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.

Abstract: The semiconductor device includes: a substrate, an n-type drift region formed on a main surface of the substrate; a p-type well region, an n-type drain region and an n-type source region each formed in the drift region to extend from a second main surface of the drift region opposite to the first main surface of the drift region in contact with the substrate in a direction perpendicular to the second main surface; a gate groove extending from the second main surface in the perpendicular direction and penetrating the source region and the well region in a direction parallel to the first main surface of the substrate; and a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween, wherein the drift region has a higher impurity concentration than the substrate, and the well region extends to the inside of the substrate.

Abstract: A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.

Abstract: A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Abstract: The present invention relates to neuregulin (NRG) 4 compounds and methods of treatment with NRG4 compounds.

Abstract: A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an epitaxial layer and forming a trench gate structure in a trench formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate disposed on the shielding electrode and an inter-electrode dielectric layer disposed therebetween. The step of forming the trench gate structure includes forming an insulating layer covering an inner surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacing layer, the spacing layer including a first sidewall portion and a second sidewall portion, both of which include bottom end portions spaced apart from each other and extending portions protruding from the protective layer.

Abstract: There are included a first conductivity-type first drift region formed on a first main surface of a substrate, and a first conductivity-type second drift region formed on the first main surface of the substrate, the second drift region formed to be reached to a deeper position of the substrate than a position of the first drift region. There are further included a second conductivity-type well region in contact with the second drift region, a first conductivity-type source region formed to extend in a direction perpendicular to a surface of the well region, and a first conductivity-type drain region separated from the well region, the drain region formed to extend in a direction perpendicular to a surface of the first drift region. Since a flow path of electrons after passing through a channel can be widened, a resistance can be reduced.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.

Abstract: A semiconductor capacitor includes a semiconductor substrate, an electrode group formed on the semiconductor substrate, and a plurality of insulators sandwiched between the electrode groups to form a plurality of capacitors. At least one of the plurality of capacitors is set to be different from at least one of a tolerance, which is a capability of the capacitors to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors.

Abstract: An inductor includes a substrate as a base material, a core portion, a coil portion, an insulating portion formed between conductors of the coil portion, and a terminal portion connecting the core portion and the coil portion to the outside. A main direction of a magnetic field that is generated in accordance with current flowing through the coil portion extends in a planar direction of the substrate. In at least a portion of the coil portion, both width and thickness of a rectangular cross-sectional area of the coil portion are larger than the width of the insulating portion.

Abstract: A semiconductor capacitor includes a semiconductor substrate, an electrode group formed on the semiconductor substrate, and a plurality of insulators sandwiched between the electrode groups to form a plurality of capacitors. At least one of the plurality of capacitors is set to be different from at least one of a tolerance, which is a capability of the capacitors to withstand a prescribed voltage, and a conductance, which is an ease with which a leakage current flows in the capacitors.

Abstract: A disposable pre-filled syringe has a protecting tube, a medication filling tube, a separating plug, a pushing module, and a needle module. The medication filling tube is made of chemically inert material and is mounted in the protecting tube. The separating plug is mounted in an end of the medication filling tube. The pushing module is slidably inserted into the medication filling tube opposite to the separating plug. The needle module is mounted on an end of the protecting tube.

Abstract: A manufacturing method of a trench power semiconductor device is provided. The manufacturing method includes the steps of forming a protective layer on an epitaxial layer and forming a trench gate structure in a trench formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate disposed on the shielding electrode and an inter-electrode dielectric layer disposed therebetween. The step of forming the trench gate structure includes forming an insulating layer covering an inner surface of the trench; and before the step of forming the inter-electrode dielectric layer, forming an initial spacing layer, the spacing layer including a first sidewall portion and a second sidewall portion, both of which include bottom end portions spaced apart from each other and extending portions protruding from the protective layer.

Abstract: The present disclosure provides a trench power semiconductor component and a manufacturing method thereof. The trench gate structure of the trench power semiconductor component is located in the at least one cell trench that is formed in an epitaxial layer. The trench gate structure includes a shielding electrode, a gate electrode disposed above the shielding electrode, an insulating layer, an intermediate dielectric layer, and an inner dielectric layer. The insulating layer covers the inner wall surface of the cell trench. The intermediate dielectric layer interposed between the shielding electrode and the insulating layer has a bottom opening. The inner dielectric layer interposed between the shielding electrode and the intermediate dielectric layer is made of a material different from that of the intermediate dielectric layer, and fills the bottom opening so that the space of the cell trench beneath the shielding electrode is filled with the same material.

Abstract: A safety syringe has a barrel, a pushing element, a retracting element, and a needle group. The barrel is hollow and has a needle-group mounting end, an operating grip end, and a barrel lumen. The pushing element is retractably mounted in the barrel lumen and has a pushrod chamber. The retracting element is airtightly and slidably mounted in the pushrod chamber. The needle group is connected to the needle-group mounting end of the barrel. The present invention can pull the retracting element to move relative to the pushing element to form a low pressure condition in the pushrod chamber as a vacuum status. After the injection, a vacuum attraction force in the pushrod chamber can retract the used needle group into the pushrod chamber for safe use of the safety syringe.

Abstract: A safety syringe has a barrel, a pushing element, a retracting element, and a needle group. The barrel is hollow and has a needle-group mounting end, an operating grip end, and a barrel lumen. The pushing element is retractably mounted in the barrel lumen and has a pushrod chamber. The retracting element is airtightly and slidably mounted in the pushrod chamber. The needle group is connected to the needle-group mounting end of the barrel. The present invention can pull the retracting element to move relative to the pushing element to form a low pressure condition in the pushrod chamber as a vacuum status. After the injection, a vacuum attraction force in the pushrod chamber can retract the used needle group into the pushrod chamber for safe use of the safety syringe.

Abstract: A compensation method, a base station, and a user equipment for uplink power control in a CoMP system are provided. The method includes: a base station determines an adjustment value for an uplink sending power of a UE; the base station sends to the UE indication information and the adjustment value for the uplink sending power of the UE, where the indication information is used for indicating a range of the adjustment value for the uplink sending power of the UE, so that the UE, according to the indication information and the adjustment value for the uplink sending power of the UE, determines the uplink sending power of the UE. Embodiments of the present invention are capable of improving the quality of sending uplink data.