Abstract: Systems and methods for creating and using a first and second group of training sequences in a training-aided single-carrier frequency domain equalization system. The first group of training sequences are conventional training sequences and the second group of training sequences are 90°-rotated versions of the first group of training sequences.

Abstract: A single-poly nonvolatile memory cell includes an SOI substrate having a semiconductor layer, a first OD region and a second OD region on the semiconductor layer, an isolation region separating the first OD region from the second OD region, a PMOS select transistor disposed on the first OD region, and a PMOS floating gate transistor disposed on the first OD region. The PMOS floating gate transistor is serially connected to the PMOS select transistor. The PMOS floating gate transistor comprises a floating gate overlying the first OD region. A floating gate extension is continuously extended from the floating gate to the second OD region and is capacitively coupled to the second OD region.

Abstract: A touch panel includes a substrate, a touch electrode, a control unit, and a trace structure. The substrate has a touch sensing area and a peripheral circuit area. The touch electrode is disposed on the touch sensing area of the substrate. The touch electrode includes a first transparent conductive layer, a second transparent conductive layer, and a metal mesh layer. The second transparent conductive layer is disposed on the first transparent conductive layer. The metal mesh layer is disposed between the first transparent conductive layer and the second transparent conductive layer, in which the metal mesh layer is at least partially in contact with the first transparent conductive layer and the second transparent conductive layer, and the metal mesh layer comprises plural metal lines. The trace structure is disposed on the peripheral circuit area of the substrate and configured to electrically connect the touch electrode to the control unit.

Abstract: A detection apparatus includes an emission component, a receiver, and a controller electrically connected with the emission component and the receiver. The emission component includes an emitter configured to emit a signal, a reflector disposed in proximity to the emitter and configured to reflect the signal emitted by the emitter, and a driver connected to the reflector. The controller is configured to control the driver to drive the reflector to rotate.

Abstract: A refrigerator having a quick-freezing function includes: a main body; at least one freezing chamber disposed in the main body and comprising at least one quick-freezing chamber; a freezing evaporator disposed in the main body, and spaced apart from the at least one freezing chamber via a freezing air duct cover plate; a freezing fan corresponding to the at least one freezing chamber and a quick-freezing fan corresponding to the at least one quick-freezing chamber, and configured to blow cold air generated by the freezing evaporator into the at least one freezing chamber and the at least one quick-freezing chamber respectively; and a controller configured to control the freezing fan and the quick-freezing fan. The refrigerator can maintain the taste and nutrition of foods through quick-freezing, and prolong the fresh period of vegetables and fruits.

Abstract: The present invention relates to a method for substituting for or acting with the hyperbaric oxygen therapy to improve hypoxia, comprising the step of: administrating a phthalide compound to a subject in need thereof, wherein the phthalide compound can increase the oxygen release efficiency of blood hemoglobin (Hb) in the subject and further increase the cellular oxygenation level, and when the phthalide compound substitutes for or act with the hyperbaric oxygen therapy, the common adverse side effects of the hyperbaric oxygen therapy, such as barotrauma, decompression sickness and oxygen poisoning, are prevented. The phthalide compound is used to substitute for or act with 2,3-BPG, to modulate and decrease the oxygen affinity of hemoglobin (Hb), to increase the oxygen release efficiency of hemoglobin (Hb) to tissue cells, thereby achieving a normal cellular oxygenation level and maintaining the cellular oxygenation level in a normal range.

Abstract: The present disclosure is directed to a system and method for stabilizing sub-synchronous interaction (SSI) of a wind turbine generator connected to a power grid. More specifically, the method includes measuring an alternating-current (a-c) quantity of the power grid. Another step includes converting the a-c quantity to a d-q quantity and providing the d-q quantity to a d-q control loop within the controller. Another step includes altering, with a symmetric control component, a transfer function of the d-q control loop. The method also includes generating at least one d-q reference signal for the wind turbine generator based on the altered transfer function so as to achieve symmetric control of the generator. A further step includes generating a control signal for the generator based, at least in part, on the at least one d-q reference signal. The method also includes operating the generator based on the control signal.

Abstract: There are provided methods, devices, and systems relating to discharging thyristor-switched capacitors. For example, there is provided a method for discharging the capacitors of a thyristor-switched capacitor (TSC) device coupled to a transmission line. The method can include determining whether an angle of a voltage on the transmission line is within one of a first threshold range and a second threshold range. Further, the method can include discharging the capacitors, when the angle is within the first threshold range, by operating the TSC device in a first discharging mode. Furthermore, the method can include discharging the capacitors, when the angle is within the second threshold range, by operating the TSC device in a second discharging mode distinct from the first discharging mode.

Abstract: A NVM cell structure includes a semiconductor substrate having a first conductivity type, a first well region having a second conductivity type, a floating gate transistor and an erase gate region. The first well region is disposed on a first OD region of the semiconductor substrate. The erase gate region disposed on a second OD region of the semiconductor substrate includes a first doped region and at least one second doped region having the second conductivity type. The first doped region is disposed in semiconductor substrate and covers the second OD region, and the second doped region is disposed in the first doped region. The first doped region encompasses the second doped region, and a doping concentration of the second doped region is larger than a doping concentration of the first doped region.

Abstract: The present invention discloses a manufacturing method to reduce the surface roughness of the low temperature poly-silicon, including: a surface pretreatment is performed to a substrate with a a-Si layer on it, to form an oxidation layer on the a-Si layer. A first excimer laser annealing is performed on the substrate to make the a-Si layer into a poly-silicon layer; an acid liquid clean is used on the poly-silicon layer to remove the protrusions on the poly-silicon layer; a second excimer laser annealing is performed to the poly-silicon layer to obtain a low temperature poly-silicon layer with lower surface roughness. The manufacturing method is easy to operation and reduce the surface roughness of the low temperature poly-silicon layer with efficiency to obtain a low temperature poly-silicon layer with low roughness, uniform surface and well crystallization. A low temperature poly-silicon layer formed according to the present invention is also provided.

Abstract: A NVM cell structure includes a semiconductor substrate having a first conductivity type, a first well region having a second conductivity type, a floating gate transistor and an erase gate region. The first well region is disposed on a first OD region of the semiconductor substrate. The erase gate region disposed on a second OD region of the semiconductor substrate includes a first doped region and at least one second doped region having the second conductivity type. The first doped region is disposed in semiconductor substrate and covers the second OD region, and the second doped region is disposed in the first doped region. The first doped region encompasses the second doped region, and a doping concentration of the second doped region is larger than a doping concentration of the first doped region.

Abstract: The present disclosure is directed to a system and method for controlling an electrical power system connected to a power grid. The method includes determining, via a negative sequence regulator programmed in a controller of the electrical power system, a negative sequence component of at least one electrical condition of the electrical power system. Further, the method includes determining a desired current response based on the negative sequence component of the at least one electrical condition of the electrical power system. Thus, the method also includes determining a control command for the power converter as a function of the desired current response so as to achieve a desired relationship between a voltage condition in the power grid and the negative sequence component of the electrical condition of the electrical power system.

Abstract: A nonvolatile memory cell includes a semiconductor substrate, a first OD region, a second OD region for forming an erase gate region, and a trench isolation region separating the first OD region from the second OD region. A select transistor is disposed on the first OD region. A floating gate transistor is serially connected to the select transistor and is disposed on the first OD region. The floating gate transistor comprises a floating gate overlying the first OD region. A floating gate extension continuously extends from the floating gate to the second OD region. A shallow junction diffusion region is situated directly under the floating gate extension within the second OD region.

Abstract: There are provided methods, devices, and systems relating to discharging thyristor-switched capacitors. For example, there is provided a method for discharging the capacitors of a thyristor-switched capacitor (TSC) device coupled to a transmission line. The method includes determining whether an angle of a voltage on the transmission line is within a threshold angle. Further, the method can include operating the device in a discharging mode when the angle is within the threshold angle and the threshold angle is in a predetermined set of threshold angles.

Abstract: There are provided methods, devices, and systems relating to discharging thyristor-switched capacitors. For example, there is provided a method for discharging a first capacitor, a second capacitor, and a third capacitor. Each of the capacitors is coupled to respective phases of a transmission line. The first capacitor and the third capacitor are each coupled to their respective phase of the transmission line via a pair of anti-parallel thyristors, and the second capacitor is coupled directly to another phase of the transmission line with no thyristors therebetween. The method can include determining whether an angle of a voltage on the transmission line is within a threshold angle. Further, the method can include discharging the first, second, and third capacitors when the angle is within a threshold angle and the threshold angle is any value from a predetermined set of threshold angles.

Abstract: When a security authentication request sent by a terminal is received, an identity authentication solution includes acquiring network environment information and user behavior data according to the security authentication request, then determining, according to the network environment information and the user behavior data, whether a current operation is a machine attack, and acquiring a CAPTCHA of a predetermined type according to a predetermined policy and delivering the CAPTCHA to the terminal if the current operation is a machine attack, to perform identity authentication, or determining that security authentication succeeds if the current operation is not a machine attack.

Abstract: A system for detecting objects using ultrasonic waves and methods for making and using the same are provided. The object detection system uniquely encodes each of a plurality of ultrasonic waves and transmit each of the uniquely-encoded ultrasonic waves in a respective direction. The object detection system then receives any of the emitted uniquely-encoded ultrasonic waves that are reflected from an object. By decoding the reflected ultrasonic waves, the object detection system distinguishes among the uniquely-encoded ultrasonic waves and detect the existence and location of the object.

Abstract: RGB-D imaging system having an ultrasonic array fin generating images that include depth data, and methods fin manufacturing and using same. The RGB-D imaging system includes an ultrasonic sensor array positioned on a housing that includes an ultrasonic emitter and a plurality of ultrasonic sensors. The RGB-D imaging system also includes an RGB camera assembly positioned on the housing in a parallel plane with, and operably connected to, the ultrasonic sensor. The RGB-D imaging system thereby provides/enables improved imaging in a wide variety of lighting conditions compared to conventional systems.

Abstract: An apparatus comprising a receiver configured to receive a super-symbol comprising a first modulation symbol and a second modulation symbol, wherein the first modulation symbol comprises a first modulation format, and wherein the second modulation symbol comprises a second modulation format, and a processor coupled to the receiver and configured to select, for the first modulation symbol, a first nearest candidate symbol from a first set of candidate symbols associated with the first modulation format, select, for the second modulation symbol, a second nearest candidate symbol independent of the first nearest candidate symbol from a second set of candidate symbols associated with the second modulation format, and determine a soft decision value for a first hit in the super-symbol according to the first nearest candidate symbol and the second nearest candidate symbol.