Abstract: A memory cell includes a program select transistor, a program element, a read select transistor, a read element, and an erase element. The program select transistor is coupled to a program source line, a program select line, and a program control line. The program element is coupled to the second terminal of the program select transistor, a program bit line, and the program control line. The read select transistor is coupled to a read source line, a read select line, and a bias control line. The read element is coupled to the second terminal of the read select transistor, a read bit line, and the bias control line. The erase element is coupled to an erase control line. A floating gate is coupled to the erase element, the program element and the read element.

Abstract: A non-volatile memory cell includes a substrate, a select gate, a floating gate, and an assistant control gate. The substrate includes a first diffusion region, a second diffusion region, a third diffusion region, and a fourth diffusion region. The select gate is formed above the first diffusion region and the second diffusion region in a polysilicon layer. The floating gate is formed above the second diffusion region, the third diffusion region and the fourth diffusion region in the polysilicon layer. The assistant control gate is formed above the floating gate in a metal layer, wherein an area of the assistant control gate overlaps with at least half an area of the floating gate.

Abstract: The present invention provides a remote wireless smart card comprising: a smart-card model, used to be arranged in a smart-card terminal unit for the conductive connection between the card model and the smart-card terminal unit as well as the electrical signal transfer between the smart-card terminal unit and the control module; a control module, used for parsing and analyzing the interface protocol between a smart-card terminal and the destination smart card and for executing the communication protocol with the destination smart card control equipment; and a wireless communication module, used for wireless communication via the wireless network between the remote wireless smart card and the destination smart card control equipment.

Abstract: An erasable programmable non-volatile memory includes a first transistor, a second transistor, an erase gate region and a metal layer. The first transistor includes a select gate, a first doped region and a second doped region. The select gate is connected with a word line. The first doped region is connected with a source line. The second transistor includes the second doped region, a third doped region and a floating gate. The third doped region is connected with a bit line. The erase gate region is connected with an erase line. The floating gate is extended over the erase gate region and located near the erase gate region. The metal layer is disposed over the floating gate and connected with the bit line.

Abstract: Apparatus and methods for image processing are provided. Imaging devices may be coupled to movable objects, such as unmanned aerial vehicles (UAVs). One or more images may be captured by an imaging device, such as a camera. The one or more images may be captured under the same or different parameters. The one or more captured images may be processed for use in computer vision applications. Processing the one or more captured images may involve analyzing a texture of the images. Subsequent images may be captured under the same or different parameters.

Abstract: A novel evanescent-wave quartz-enhanced optical microfiber photoacoustic gas sensor is provided for detecting trace amounts of gas. Both fiber-taper based evanescent field and photoacoustic spectroscopy can be used to exploit the merits of both technologies. The use of a fiber half-taper into the tuning fork and microresonator tubes can result in reduced system size, simplified optical alignment, and high sensitivity. The techniques described can be used in chemical, biological and environmental sensing applications.

Abstract: The present invention relates to a method for preventing cancer by using a phthalide compound, wherein the phthalide compound has an effect of increasing the oxygen release efficiency of hemoglobin (Hb) of a subject to increase the oxygenation level of organs and tissue cells, thereby preventing the cellular oxygenation level against falling below the critical cellular oxygen requirements under which the normal cells can turn cancerous. Although cancer may be caused by a variety of reasons, including congenital inheritance, external environment, air pollution or poor living and dietary habits, there is only one primary and common reason in causing cancers, the excessively low cellular oxygenation level. When the oxygenation level of any cell falls below 60% of its physiological oxygen requirements, the normal cell may turn cancerous.

Abstract: The present subject matter is directed to a system and method for operating an electrical power circuit connected to a power grid. The power circuit includes a power converter electrically coupled to a generator. The method includes monitoring at least one speed condition of the generator during operation of the power circuit. Another step includes determining one or more voltage conditions of the power circuit. The method also includes calculating a maximum reactive current for the generator as a function of at least one of the speed condition or the one or more voltage conditions. Thus, the method also includes operating the generator based on the maximum reactive current so as to prevent an actual modulation index of the power converter from exceeding a predetermined threshold.

Abstract: The present invention relates to a method for treating Alzheimer's disease and 2,3-BPG metabolic disorder induced morbidities, comprising administrating a phthalide compound to an Alzheimer's disease patient or a patient having 2,3-BPG metabolic disorder induced morbidities, wherein the method is characterized by that the phthalide compound has the same effect as 2,3-BPG on modulating hemoglobin to reduce its oxygen affinity and can thus act as a 2,3-BPG functional substitute when the 2,3-BPG concentration is too low in the Alzheimer's disease patient or in the patient having 2,3-BPG metabolic disorder induced morbidities to maintain the normal oxygen release function of hemoglobin and therefore to maintain the normal cellular oxygenation level.

Abstract: The present invention relates to a method for substituting for or acting with the hyperbaric oxygen therapy to improve hypoxia, comprising the step of: administrating a phthalide compound to a subject in need thereof, wherein the phthalide compound can increase the oxygen release efficiency of blood hemoglobin (Hb) in the subject and further increase the cellular oxygenation level, and when the phthalide compound substitutes for or act with the hyperbaric oxygen therapy, the common adverse side effects of the hyperbaric oxygen therapy, such as barotrauma, decompression sickness and oxygen poisoning, are prevented. The phthalide compound is used to substitute for or act with 2,3-BPG, to modulate and decrease the oxygen affinity of hemoglobin (Hb), to increase the oxygen release efficiency of hemoglobin (Hb) to tissue cells, thereby achieving a normal cellular oxygenation level and maintaining the cellular oxygenation level in a normal range.

Abstract: The present invention discloses a manufacturing method to reduce the surface roughness of the low temperature poly-silicon, including: a surface pretreatment is performed to a substrate with a a-Si layer on it, to form an oxidation layer on the a-Si layer. A first excimer laser annealing is performed on the substrate to make the a-Si layer into a poly-silicon layer; an acid liquid clean is used on the poly-silicon layer to remove the protrusions on the poly-silicon layer; a second excimer laser annealing is performed to the poly-silicon layer to obtain a low temperature poly-silicon layer with lower surface roughness. The manufacturing method is easy to operation and reduce the surface roughness of the low temperature poly-silicon layer with efficiency to obtain a low temperature poly-silicon layer with low roughness, uniform surface and well crystallization. A low temperature poly-silicon layer formed according to the present invention is also provided.

Abstract: Differing from conventionally-used miniature cubic antenna being provided with a signal transceiving conductor on the outer surface thereof, the present invention provides a multilayer chip antenna formed by sequentially stacking a first coupling substrate, a signal transceiving metal layer, and a second coupling substrate. Particularly, the first coupling substrate and the second coupling substrate are disposed with a first metal layer and a second metal layer, respectively. Therefore, when the signal transceiving metal layer transmits or receives a wireless signal, not only a first coupling capacitor is induced between the signal transceiving metal layer and the first metal layer, but also a second coupling capacitor is simultaneously induced between the signal transceiving metal layer and the third metal layer; meanwhile, the first and second coupling capacitors are helpful to enhance the impedance bandwidth as the multilayer chip antenna transmits and/or receives a high-frequency wireless signal.

Abstract: A touch-sensing module is disclosed. The touch-sensing module includes: a substrate having a first region, a second region and a flexible region configured between the first region and the second region so as to enable the touch-sensing module to have a folded state and an unfolded state; and a sensing layer configured under the substrate and having a first sensing pattern layer and a second sensing pattern layer, wherein the first sensing pattern layer corresponds to the first region and the second sensing pattern layer corresponds to the second region.

Abstract: Disclosed are a chromatic dispersion estimation method and device in optical coherent communication, wherein, the method includes: performing a fast Fourier transform on IQ-imbalance compensated data to obtain frequency-domain data in two polarization directions; calculating autocorrelation sequences of the frequency-domain data and performing an inverse fast Fourier transform on the values of the autocorrelation sequences; calculating modulus squares of the results of the inverse fast Fourier transform, and adding the results in the two polarization directions to obtain; determining a mean value of s of a plurality of data sets; calculating an index of the maximum value of, and estimating a dispersion value of the optical fiber link according to the index of the maximum value of. The abovementioned technical solution allows a significantly accurate and rapid estimation of dispersion values.

Abstract: A system includes a subscriber identity module (SIM) application; a physical SIM driver configured to be coupled to a physical SIM card; a simulated SIM driver; a control switch that selectively couples the SIM application to the physical SIM driver or the simulated SIM driver, wherein the SIM application, when coupled to the physical SIM driver, is configured to read and write on the physical SIM card; and a SIM simulator in communication with the control switch and the simulated SIM driver, wherein the SIM simulator is configured to control the selective coupling of the control switch, and is configured to receive at least one request comprising an authentication request from the simulated SIM driver and transmit at least one response comprising an authentication response to the simulated SIM driver.

Abstract: The present invention relates to a method for increasing the oxygen release efficiency of a hemoglobin-based blood substitute by using a phthalide compound, comprising the steps of: administering to a subject in need thereof the phthalide compound or co-administering to the subject in need thereof the phthalide compound along with the hemoglobin-based blood substitute, wherein the phthalide compound has an effect of increasing the oxygen release efficiency of the hemoglobin-based blood substitute, wherein the hemoglobin-based blood substitute can be fetal hemoglobin (HbF) or other Hb variants retaining two native ? subunits. The phthalide compound is used to substitute for or cooperate with 2,3-BPG, to play a role of a 2,3-BPG substitute, to act on the hemoglobin-based blood substitute to effectively substitute the function of normal hemoglobin in releasing oxygen to tissue cells, in order to maintain the cellular oxygenation level within a normal range.

Abstract: A nonvolatile memory structure includes a first PMOS transistor and a first floating-gate transistor on a first active region in a substrate, a second PMOS transistor and a second floating-gate transistor on a second active region in the substrate, and an n-type erase region in the substrate. A source line connects with sources of the first and the second PMOS transistors. A bit line connects with drains of the first and the second floating-gate transistors. A word line connects with first and the second select gates in the first and the second PMOS transistors respectively. An erase line connects with the n-type erase region. The first floating-gate transistor includes a first floating gate with an extended portion extending on a first portion of the n-type erase region. The second floating-gate transistor includes a second floating gate with an extended portion extending on a second portion of the n-type erase region.

Abstract: A memory cell includes a program select transistor, a program element, a read select transistor, a read element, and an erase element. The program select transistor is coupled to a program source line, a program select line, and a program control line. The program element is coupled to the second terminal of the program select transistor, a program bit line, and the program control line. The read select transistor is coupled to a read source line, a read select line, and a bias control line. The read element is coupled to the second terminal of the read select transistor, a read bit line, and the bias control line. The erase element is coupled to an erase control line. A floating gate is coupled to the erase element, the program element and the read element.

Abstract: A single-poly nonvolatile memory cell includes an SOI substrate having a semiconductor layer, a first OD region and a second OD region on the semiconductor layer, an isolation region separating the first OD region from the second OD region, a PMOS select transistor disposed on the first OD region, and a PMOS floating gate transistor disposed on the first OD region. The PMOS floating gate transistor is serially connected to the PMOS select transistor. The PMOS floating gate transistor comprises a floating gate overlying the first OD region. A floating gate extension is continuously extended from the floating gate to the second OD region and is capacitively coupled to the second OD region.

Abstract: An apparatus comprising a receiver configured to receive a super-symbol comprising a first modulation symbol and a second modulation symbol, wherein the first modulation symbol comprises a first modulation format, and wherein the second modulation symbol comprises a second modulation format, and a processor coupled to the receiver and configured to select, for the first modulation symbol, a first nearest candidate symbol from a first set of candidate symbols associated with the first modulation format, select, for the second modulation symbol, a second nearest candidate symbol independent of the first nearest candidate symbol from a second set of candidate symbols associated with the second modulation format, and determine a soft decision value for a first hit in the super-symbol according to the first nearest candidate symbol and the second nearest candidate symbol.