Patents by Inventor Wei Su

Wei Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for processing service data in optical transport network
    Patent number: 11700083
    Abstract: A method for processing service data in an optical transport network includes receiving service data, where the service data is to be mapped to a plurality of consecutive data frames, determining a quantity of code blocks, occupied by the service data, of each of the plurality of consecutive data frames and locations of the code blocks, where the code block includes a payload area and an overhead area, the payload area of the code block is used to carry the service data, and the overhead area of the code block includes identification information of the service data, and mapping the service data to the plurality of consecutive data frames based on the quantity of code blocks and the locations of the code blocks.
    Type: Grant
    Filed: August 7, 2020
    Date of Patent: July 11, 2023
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Qiuyou Wu, Wei Su, Yujie Chen
  • METAL MESH TOUCH SCREEN AND METHOD FOR MANUFACTURING METAL MESH TOUCH SCREEN
    Publication number: 20230214074
    Abstract: Disclosed are a metal mesh touch screen and a method for manufacturing a metal mesh touch screen. The metal mesh touch screen includes the first functional electrode layer, a first adhesive layer, a second functional electrode layer and a second adhesive layer placed sequentially. The first functional electrode layer includes the first metal mesh wiring extending in a first direction and a metal material for preparing the first metal mesh wiring is a metal foil with a first rough surface and a second rough surface. The second functional electrode layer includes a second metal mesh wiring extending in a second direction and a metal material for preparing the second metal mesh wiring is the metal foil with the first rough surface and the second rough surface.
    Type: Application
    Filed: October 18, 2022
    Publication date: July 6, 2023
    Applicant: Micron Optoelectronics Co., Ltd.
    Inventors: Wei SU, Guoliang ZHANG, Shourong HU
  • ELECTROTHERMAL FILM STRUCTURE, ELECTROTHERMAL FILM HEATING DEVICE AND METHOD FOR MANUFACTURING ELECTROTHERMAL FILM
    Publication number: 20230217549
    Abstract: Disclosed are an electrothermal film structure, an electrothermal film heating device and a method for manufacturing an electrothermal film. The electrothermal film structure includes a supporting layer, a meshed conductive circuit layer and a transparent optical layer. The meshed conductive circuit layer provided on the supporting layer includes several micron-level conductive circuits distributed in a mesh, and the transparent optical layer is provided on the meshed conductive circuit layer.
    Type: Application
    Filed: November 18, 2022
    Publication date: July 6, 2023
    Applicant: Micron Optoelectronics Co., Ltd.
    Inventors: Wei SU, Shourong HU, Guoliang ZHANG, Yu SU
  • BASE STATION MANAGEMENT DEVICE AND METHOD
    Publication number: 20230217547
    Abstract: A base station management device is provided in the invention. The base station management device includes a Non-Real Time (Non-RT) Radio-Access-Network Intelligent Controller (RIC) and a management device. The Non-RT RIC communicates with applications through a first communication interface. The management device manages a plurality of base stations, communicates with the Non-RT RIC through a second communication interface, and registers a first application and a second application through the Non-RT RIC. The management device detects the plurality of base stations through the first application to determine whether to update the parameter information of the plurality of base stations through the second application.
    Type: Application
    Filed: March 13, 2023
    Publication date: July 6, 2023
    Inventors: Chih-Wei SU, Chen-chieh TSAI
  • CUTTER ADAPTED FOR USE WITH A POWER TOOL
    Publication number: 20230211517
    Abstract: A cutter includes a main body, a cog assembly, and a blade. The main body is provided with an anvil. The cog assembly includes a drive shaft and a first and a second cog. The drive shaft is rotatably connected to the main body. The drive shaft has a first end configured to detachably connect which a power tool. The first cog moves synchronously with the drive shaft. The second cog is rotatably connected to the main body and rotates upon rotation of the first cog. The blade is rotatably connected to the main body and connected to the second cog. The blade is rotatable between a deployment position and a cutting position and has a cutting edge. The cutting edge is disposed away from the anvil when the blade is in the deployment position, but is adjacent to the anvil when the blade is in the cutting position.
    Type: Application
    Filed: October 26, 2022
    Publication date: July 6, 2023
    Inventor: Cheng-Wei SU
  • RAPID ADJUSTABLE WRENCH
    Publication number: 20230202003
    Abstract: A rapid adjustable wrench includes a body, a movable jaw, and an engaging device. The body has a fixed jaw, a sliding groove, and a containing recess. The movable jaw includes a sliding portion movably arranged in the sliding groove and a first toothed portion adjacent to the sliding portion. The engaging device includes an engaging member and a toggle switch. The engaging member is arranged in the containing recess and has a second toothed portion selectively engaged with the first toothed portion. One end of the toggle switch is connected to the engaging member. The toggle switch is able to drive the engaging member to move between an engaging position and a releasing position.
    Type: Application
    Filed: September 29, 2022
    Publication date: June 29, 2023
    Inventor: Cheng-Wei SU
  • HEMT and method of fabricating the same
    Patent number: 11688790
    Abstract: An HEMT includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from the composition of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed directly on the gate.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: June 27, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Chang, Yao-Hsien Chung, Shih-Wei Su, Hao-Hsuan Chang, Da-Jun Lin, Ting-An Chien, Bin-Siang Tsai
  • High electron mobility transistor and fabrication method thereof
    Patent number: 11688802
    Abstract: A method for forming a high electron mobility transistor is disclosed. A substrate is provided. A channel layer is formed on the substrate. An electron supply layer is formed on the channel layer. A dielectric passivation layer is formed on the electron supply layer. A gate recess is formed into the dielectric passivation layer and the electron supply layer. A surface modification layer is conformally deposited on an interior surface of the gate recess. The surface modification layer is then subjected to an oxidation treatment or a nitridation treatment. A P-type GaN layer is formed in the gate recess and on the surface modification layer.
    Type: Grant
    Filed: February 18, 2021
    Date of Patent: June 27, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Chang, Yao-Hsien Chung, Shih-Wei Su, Hao-Hsuan Chang, Ting-An Chien, Bin-Siang Tsai
  • IMAGE MANAGEMENT METHOD, APPARATUS, AND SYSTEM, AND TERMINAL DEVICE
    Publication number: 20230195779
    Abstract: An image management method includes: after a video stream sent by a camera is obtained, recognizing a face image in the video stream through face recognition; comparing the image with a face image that is in an area in which the camera is located in a database; and if the comparison fails, expanding the area in which the camera is located around, and then comparing the face image with face images in an area obtained after the area in which the camera is located is expanded. .
    Type: Application
    Filed: February 14, 2023
    Publication date: June 22, 2023
    Inventors: Ping Zhang, Wei Su, Ling Deng, Ting Lei
  • ADJUSTMENT MECHANISM, PICK-AND-PLACE SYSTEM, AND OPERATION METHOD THEREOF
    Publication number: 20230191625
    Abstract: A pick-and-place system includes a movement mechanism, an adjustment mechanism, and a clamping mechanism. The adjustment mechanism includes a first coupling component, a second coupling component, and a driving assembly. The first coupling component is mounted on the movement mechanism. The second coupling component is movably disposed on the first coupling component. The driving assembly is configured to be connected to the first coupling component and the second coupling component so as to force the first coupling component and the second coupling component to move relative to each other. The clamping mechanism is mounted on the second coupling component of the adjustment mechanism.
    Type: Application
    Filed: March 14, 2022
    Publication date: June 22, 2023
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yen-Cheng CHEN, Jun-Yi JIANG, Guan-Wei SU
  • Macro imaging method and terminal
    Patent number: 11683574
    Abstract: A camera module comprises an image sensor having a size greater than or equal to 1/3.06 inch and less than or equal to 1/2.78 inch and a lens module comprising at least five lenses disposed in sequence between an object side and an image side of the camera module. A ratio between a half-image height of the lens module and a total track length of the camera module is greater than or equal to 0.5 and less than or equal to 0.6. A field of view of the lens module is greater than or equal to 100 degrees. An aperture of the lens module is greater than or equal to F1.8 and less than or equal to F2.4. An equivalent focal length of the lens module is greater than or equal to 10 mm and less than or equal to 20 mm.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: June 20, 2023
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Haiyan Wang, Haishui Ye, Wei Su
  • METHOD AND SYSTEM FOR COMMUNICATION IN SERVICE MANAGEMENT AND ORCHESTRATION
    Publication number: 20230189193
    Abstract: A method for communication in service management and orchestration is provided. The method includes receiving, by a Non-real time radio access network (RAN) Intelligent Controller (Non-RT RIC) framework, a first subscription message from an Element Management System (EMS), wherein the first subscription message is used to request second data used to run a Non-RT RIC application (rApp). The method includes transmitting, by the Non-RT RIC framework, a first callback message to the rApp according to the first subscription message to notify the rApp that the EMS requests the second data.
    Type: Application
    Filed: February 3, 2023
    Publication date: June 15, 2023
    Inventors: Chih-Wei SU, Pei-Hsuan LIN
  • Polymer, composition, and polysiloxane-polyimide material thereof
    Patent number: 11667757
    Abstract: A polymer, a composition, and a polysiloxane-polyimide material thereof are provided. The polymer includes a first repeat unit and a second repeat unit. The first repeat unit has a structure represented by Formula (I) and the second repeat unit has a structure represented by Formula (II) wherein A1 and A3 are independently tetravalent moiety; A2 is a divalent moiety; n?1; m?1; R1 is independently hydrogen, C1-8 alkyl, C1-8 fluoroalkyl, C1-8 alkoxy, or C6-12 aryl; and R2 is independently hydrogen, C1-8 alkyl, C1-8 fluoroalkyl, C1-8 alkoxy, C6-12 aryl, or a reactive functional group.
    Type: Grant
    Filed: December 31, 2020
    Date of Patent: June 6, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Dong-Sen Chen, Yu-Ju Kuo, Yung-Lung Tseng, Chun-Wei Su
  • Telescopic tool
    Patent number: 11667028
    Abstract: A telescopic tool includes a positioning device mounted between first and second rods. The first rod includes a first positioning hole, and a first gripping portion. The second rod includes a plurality of second positioning holes, and is movable relative to the first rod to align the first positioning hole with one of the second positioning holes. A switch controller is movable relative to the first rod and is movably coupled to a positioning member. The positioning member movably extends through the first positioning hole and is releasably engaged in one of the second positioning holes in response to movement of the switch controller relative to the first rod. A fixing member includes a second gripping portion mounted around the first rod. A resilient biasing member is pivotally connected to the first rod and pressing against the positioning member.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: June 6, 2023
    Assignee: Hong Ann Tool Industries Co., Ltd.
    Inventor: Cheng-Wei Su
  • COMPUTING IN MEMORY CELL
    Publication number: 20230153375
    Abstract: A computing in memory (CIM) cell includes a memory cell circuit, a first semiconductor element, a second semiconductor element, a third semiconductor element, and a fourth semiconductor element. A first terminal of the first semiconductor element receives a bias voltage. A control terminal of the first semiconductor element is coupled to a computing word-line. A control terminal of the second semiconductor element is coupled to a first data node in the memory cell circuit. A second terminal of the third semiconductor element is adapted to receive a reference voltage. A control terminal of the third semiconductor element receives an inverted signal of the computing word-line. A first terminal of the fourth semiconductor element is coupled to a first computing bit-line. A second terminal of the fourth semiconductor element is coupled to a second computing bit-line.
    Type: Application
    Filed: January 18, 2023
    Publication date: May 18, 2023
    Applicant: Industrial Technology Research Institute
    Inventors: Chih-Sheng Lin, Jian-Wei Su, Tuo-Hung Hou, Sih-Han Li, Fu-Cheng Tsai, Yu-Hui Lin
  • METHOD FOR MANUFACTURING METAL SENSING ELECTRODE STRUCTURE, TOUCH DISPLAY DEVICE AND MOBILE TERMINAL
    Publication number: 20230147436
    Abstract: Disclosed are a method for manufacturing a metal sensing electrode structure, a touch display device and a mobile terminal. The method for manufacturing a metal sensing electrode structure for a capacitive touch screen includes: coating a protective material on a first surface of a first metal foil layer to obtain a first coating layer, wherein a thickness of the first metal foil layer is greater than that of the first coating layer; connecting a surface of the first coating layer opposite to the first metal foil layer with a first optical adhesive layer; and performing a photolithography process on a second surface of the first metal foil layer to obtain a first metal sensing electrode structure.
    Type: Application
    Filed: November 3, 2022
    Publication date: May 11, 2023
    Applicant: Micron Optoelectronics Co., Ltd.
    Inventors: Wei SU, Zonghe YE
  • METAL MESH STRUCTURE, TOUCH DISPLAY DEVICE AND MOBILE TERMINAL
    Publication number: 20230146145
    Abstract: Disclosed are a metal mesh structure for a capacitive touch screen, a touch display device and a mobile terminal. The metal mesh structure includes: a first metal mesh layer, a first coating layer, a first optical adhesive layer, a second metal mesh layer and a second coating layer which are arranged in sequence. The first coating layer is coated on the first metal mesh layer, a thickness of the first coating layer is smaller than that of the first metal mesh layer, the second coating layer is coated on the second metal mesh layer, and a thickness of the second coating layer is smaller than that of the second metal mesh layer.
    Type: Application
    Filed: November 3, 2022
    Publication date: May 11, 2023
    Applicant: Micron Optoelectronics Co., Ltd.
    Inventors: Wei SU, Zonghe YE
  • ELECTROCHROMIC MATERIAL AND PREPARATION METHOD THEREOF, ELECTROCHROMIC DEVICE
    Publication number: 20230142738
    Abstract: Disclosed is an electrochromic material. The electrochromic material includes: a low eutectic solvent, and a color-changing material which includes a hydrogen bond donor material and a hydrogen bond acceptor material. The electrochromic material also includes an aerogel.
    Type: Application
    Filed: November 3, 2022
    Publication date: May 11, 2023
    Applicant: Micron Optoelectronics Co., Ltd.
    Inventors: Wei SU, Guoliang ZHANG, Shourong HU
  • HEMT AND METHOD OF FABRICATING THE SAME
    Publication number: 20230145175
    Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from that of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed on the gate.
    Type: Application
    Filed: January 3, 2023
    Publication date: May 11, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Chang, Yao-Hsien Chung, Shih-Wei Su, Hao-Hsuan Chang, Da-Jun Lin, Ting-An Chien, Bin-Siang Tsai
  • SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20230146366
    Abstract: A device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, source/drain structures over the substrate and on opposite sides of the gate structure, and a self-assemble monolayer (SAM) in contact with an inner sidewall of one of the gate spacer and in contact with a top surface of the gate structure.
    Type: Application
    Filed: January 11, 2023
    Publication date: May 11, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Wei SU, Fu-Ting YEN, Ting-Ting CHEN, Teng-Chun TSAI