Abstract: Methods and systems for information extraction include configuring a language model with an information extraction instruction prompt and at least one labeled example prompt. Configuration of the language model is validated using at least one validation prompt. Errors made by the language model in response to the at least one validation prompt are corrected using a correction prompt. Information extraction is performed on an unlabeled sentence using the language model to identify a relation from the unlabeled sentence. An action is performed responsive to the identified relation.

Abstract: The present disclosure provides a display panel. The display panel includes a pixel layer, and the pixel layer includes a pixel electrode layer, an insulated metal layer, a pixel definition layer, an electroluminescence layer and a common electrode layer stacked in sequence. The pixel electrode layer includes a pixel electrode, and the insulated metal layer includes an insulated metal block corresponding to the pixel electrode; the insulated metal block and the pixel definition layer are provided with a pixel opening that exposes the corresponding pixel electrode; an insulated lateral slot that surrounds the pixel opening and opens at the pixel opening, is provided between the insulated metal block and the pixel opening; and the electroluminescence layer covers the pixel opening, and a thickness of the electroluminescence layer is equal to or greater than a thickness of the insulated metal block.

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

Abstract: An encoder includes circuitry and memory coupled to the circuitry. The circuitry: executes a second process of applying a second filter to the first image to generate a second image, not holding the second image as a reference image, holding the first image as a reference image, and displaying the second image; writes coefficients of each of one or more filter candidates that are candidates for the second filter into a bitstream, wherein the coefficients are included in a first storage location when written into the bitstream; and writes a parameter that specifies, for each image, one of the one or more filter candidates as the second filter into the bitstream, wherein the parameter is included in a second storage location when written into the bitstream, and the second storage location is different from the first storage location.

Abstract: The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

Abstract: A low-carbon, green and efficient preparation method for soybean oil body-curcumin emulsion includes following steps: soybeans are mixed with NaHCO3 solution at a ratio of 1:7, soaked in the NaHCO3 solution at 4° C. for 20 h and blended with a blender for 6 min to obtain soybean slurry, pH of the soybean slurry is adjusted to 11.0, then the soybean slurry is stirred for 2 h at 50° C. in a water bath to obtain stirred slurry, the stirred slurry is filtered to obtain a suspension, and the suspension is centrifuged to obtain a soybean oil body; curcumin is dissolved with 0.2 M NaOH and then mixed with the soybean oil body to obtain a mixed emulsion, and pH of the mixed emulsion is adjusted to 6.5-8.0 and then the mixed emulsion is stirred for 30 min in dark to obtain the soybean oil body-curcumin emulsion.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor die and surrounding a sidewall of the semiconductor die with a dielectric material. The method further includes forming a post passivation interconnect (PPI) over the semiconductor die and electrically coupling the PPI with the semiconductor die. The method further includes molding the semiconductor die and the PPI into an integrated semiconductor package. The method further includes covering at least a portion of an outer surface of the integrated semiconductor package with a conductive layer, wherein the conductive layer is conformal to the morphology of the portion of the outer surface. Moreover, the method further includes forming a conductive path inside the integrated semiconductor package electrically coupled to the conductive layer and a ground terminal of the integrated semiconductor package.

Abstract: According to various embodiments, an electronic device is described, comprising a device input for connecting an analog signal source, an analog-to-digital converter having an analog-to-digital converter input connected to the device input, an alternating current source configured to supply an alternating current to the analog-to-digital-converter input and a detection circuit configured to store a reference for an amplitude of a voltage signal at the analog-to-digital-converter input caused by the alternating current, receive an output of the analog-to-digital converter, determine the amplitude of the voltage signal at the analog-to-digital-converter input caused by the alternating current by filtering the output of the analog-to-digital converter and output an error signal if the reference for the amplitude differs from the determined amplitude by more than a predetermined threshold.

Abstract: Provided is a soybean oligosaccharide-related kompetitive allele-specific PCR (KASP) marker and use thereof, belonging to the technical field of molecular breeding. The KASP marker includes one or two of S18_51868868 T/G and S10_38081012 T/C, where the S18_51868868 T/G is a base T or a base G at a 51868868bp position on chromosome 18 of a soybean genome; and the S10_38081012 T/C is a base T or a base C at a 38081012bp position of chromosome 10 of the soybean genome. In the present disclosure, the KASP marker can accurately genotype the traits of raffinose and stachyose contents. Through genotyping, it is found that a soybean germplasm with a genotype GG has a higher raffinose content than that of a soybean germplasm with a genotype TT, and a soybean germplasm with a genotype TT has a higher stachyose content than that of a soybean germplasm with a genotype CC.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; a gate stack disposed on the AlGaN layer; a source feature and a drain feature disposed on the AlGaN layer and interposed by the gate stack; a dielectric material layer is disposed on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, wherein the field plate includes a step-wise structure.

Abstract: A method for processing an integrated circuit includes forming N-type and P-type gate all around transistors and core gate all around transistors. The method deposits a metal gate layer for the P-type transistors. The method forms a passivation layer in-situ with the metal gate layer of the P-type transistor.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.

Abstract: Provided is a multi-tow carbon fiber spreading and pre-impregnation system, which is used to solve the technical problems of large thickness, high porosity and the like of a prepreg tape product caused by low spread ratio and insufficient pre-impregnation in the production process of existing thermoplastic prepreg tapes. The system includes a filament release module, a filament doubling module, an airflow spreading module, a process deviation correction module, a traction module, a slurry impregnation module, an infrared melting module, a hot-pressing shaping module, a floating roller module, a cutting module, a leftover collecting module, a winding deviation correction module and a winding module which are sequentially arranged along a feeding direction. The filament release module includes at least two filament release assemblies, and carbon fibers are placed on the filament release assemblies.

Abstract: A method for treating or alleviating gliomas in a subject is provided, including inhibiting olfactory inputs in the subject. A pharmaceutical composition applicable for treating or alleviating gliomas in a subject is further provided, including at least one inhibitor of an olfactory neuronal circuit in a brain of the subject.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming an opening in a semiconductor body, and the semiconductor body is p-type doped. The method also includes introducing n-type dopants into the semiconductor body to form a modified portion near the opening, and the modified portion is p-type doped. The method further includes forming a dielectric layer along the sidewalls and the bottom of the opening. In addition, the method includes forming a conductive structure over the dielectric layer to fill the opening.

Abstract: This invention is in the field of medicinal chemistry. In particular, the invention relates to a new class of small-molecules having a tetrahydroacridine (or similar) structure, an acridine (or similar) structure, a benzonaphthyridine (or similar) structure, or a tetrahydrobenzonaphthyridine (or similar) structure which function as autophagy inhibitors and/or histone deactylase inhibitors, and their use as therapeutics for the treatment of conditions characterized with aberrant autophagy activity and/or aberrant HDAC activity (e.g., cancer, pulmonary hypertension, diabetes, neurodegenerative disorders, aging, heart disease, rheumatoid arthritis, infectious discuses, conditions and symptoms caused by a viral infection (e.g., COVID-19)).

Abstract: A method for modeling compaction in a reservoir including obtaining a profile of vertical burial depth, a profile of effective stress against the vertical burial depth, and approximating a plurality of rock grains with a hexagonal closed-packed arrangement of spheres to estimate compacted mechanical and chemical porosity profiles.

Abstract: A method includes providing a substrate having a first region and a second region, forming a fin protruding from the first region, where the fin includes a first SiGe layer and a stack alternating Si layers and second SiGe layers disposed over the first SiGe layer and the first SiGe layer has a first concentration of Ge and each of the second SiGe layers has a second concentration of Ge that is greater than the first concentration, recessing the fin to form an S/D recess, recessing the first SiGe layer and the second SiGe layers exposed in the S/D recess, where the second SiGe layers are recessed more than the first SiGe layer, forming an S/D feature in the S/D recess, removing the recessed first SiGe layer and the second SiGe layers to form openings, and forming a metal gate structure over the fin and in the openings.

Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

Abstract: The present disclosure belongs to the technical field of sludge treatment, and discloses a sludge and kitchen waste collaborative digestion process coupled with intermediate thermal hydrolysis. The collaborative digestion process includes: 1) screening and slurrying kitchen waste, and desanding and deslagging primary sludge; 2) mixing the kitchen waste and the primary sludge, and carrying out first-stage collaborative anaerobic digestion on the mixture; 3) mixing the first-stage collaborative anaerobic digestion product with residual activated sludge, and carrying out centrifugal dehydration; 4) carrying out thermal hydrolysis on the dehydrated sludge cake; 5) desanding the thermally-hydrolyzed sludge; 6) diluting the desanded thermally-hydrolyzed sludge followed by heat exchange; 7) carrying out second-stage anaerobic digestion; 8) carrying out plate-frame dehydration; 9) carrying out anaerobic ammonia oxidation on the filtrates; and 10) compounding sludge cake nutrients to produce organic nutrient soil.