Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.

Abstract: A light-emitting signal generating circuit includes a first transistor, having a first terminal for receiving a first light-emitting signal, a gate terminal for receiving a first clock signal, and a second terminal that generates a control signal; a second transistor that has a first terminal for receiving a first reference voltage, a gate terminal, and a second terminal for outputting a second light-emitting signal; a first capacitor having a first terminal for receiving a second clock signal, and a second terminal coupled to the second terminal of the first transistor and a gate terminal of the second transistor, wherein a low level period of the first clock signal partially overlaps with a low level period of the second clock signal, and a falling edge of the second clock signal lags behind a falling edge of the first clock signal.

Abstract: A high strength and wear resistant multi-element copper alloy is disclosed. The multi-element copper alloy consists of six principal elements and at least one additive element, in which the six principal elements are 97 to 98.5 atomic percent Cu, at most 0.1 atomic percent Al, 0.2 to 0.45 atomic percent Ni, 0.1 to 0.3 atomic percent Si, 0.15 to 0.45 atomic percent V, and 0 to 0.3 atomic percent Nb, and the at least one additive element is selected from a group consisting of Sn, Fe, Mn, Mg, C, P, and B. Moreover, experimental data have proved that, this multi-element copper alloy has a wear resistance greater than 475 m/mm3 after being subjected to a homogenization process at 900 degrees Celsius for 6 hours and an age hardening process at 450 degrees Celsius for 50 hours.

Abstract: Systems, apparatuses, and methods for improved reconfigurable optical sensing are provided. For instance, an example optical sensing apparatus can include a photodetector array including a plurality of photodetectors. The optical sensing apparatus can include circuitry or one or more processing devices configured to receive one or more electrical signals representing an optical signal received by a first subset of the plurality of photodetectors; determine, based on the one or more electrical signals, a region of interest in the photodetector array for optical measurements; and deactivate, based on the region of interest, a second subset of the plurality of photodetectors of the photodetector array.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: Polypeptides are disclosed having an amino acid sequence at least 50% identical to the amino acid sequence of SEQ ID NO:1, wherein, relative to SEQ ID NO:1, residue 43 is I, residue 95 is Q, and residue 128 is L, fusion proteins thereof, kits thereof, and methods for using the polypeptides for treating a disorder associated with cortisol, or for detecting cortisol in a biological sample.

Abstract: A signal connection includes an upper-row transmission conductor group, an upper-row first high-frequency transmission conductor group, an upper-row first high-frequency transmission conductor group bend portion, an upper-row first high-frequency transmission conductor group soldering portion, an upper-row central grounding transmission conductor, an upper-row central grounding transmission conductor bend portion, an upper-row central grounding transmission conductor soldering portion, an upper-row second high-frequency transmission conductor group, an upper-row second high-frequency transmission conductor group bend portion, an upper-row second high-frequency transmission conductor group soldering portion, a lower-row transmission conductor group, a lower-row first signal transmission conductor, a lower-row first signal transmission conductor soldering portion, a lower-row power transmission conductor, a lower-row power transmission conductor soldering portion, a lower-row second signal transmission conducto

Abstract: A Totem Pole PFC circuit includes at least one fast-switching leg, a slow-switching leg, and a control unit. Each fast-switching leg includes a fast-switching upper switch and a fast-switching lower switch. The slow-switching leg is coupled in parallel to the at least one fast-switching leg, and the slow-switching leg includes a slow-switching upper switch and a slow-switching lower switch. The control unit receives an AC voltage with a phase angle, and the control unit includes a current detection loop, a voltage detection loop, and a control loop. The control loop generates a second control signal assembly to respectively control the slow-switching upper switch and the slow-switching lower switch. The control loop controls the second control signal assembly to follow the phase angle, and dynamically adjusts a duty cycle of the second control signal assembly to turn on or turn off the slow-switching upper switch and the slow-switching lower switch.

Abstract: The invention provides a layout pattern cell of a static random access memory (SRAM), which at least comprises a first SRAM cell, a plurality of gate structures spanning a plurality of fin structures, so as to form a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first access transistor, a second access transistor, a third access transistor, a fourth access transistor, a first parasitic transistor and a second parasitic transistor located on a substrate, the first parasitic transistor and the first pull-down transistor span the same fin structure, and the fin structure spanned by the first parasitic transistor and the first pull-down transistor is a continuous structure.

Abstract: A semiconductor device includes a substrate, a channel layer, a source/drain region and a gate structure. The channel layer is located on the substrate, in which the channel layer includes silicon germanium. The source/drain region is adjacent to the channel layer. The gate structure is located on the channel layer, in which the gate structure includes a dielectric layer and a work function metal layer. The dielectric layer is located on the channel layer. The work function metal layer is located on the dielectric layer.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.

Abstract: The present invention provides an image data transmission method and an image processing module. The image data transmission method comprises following steps: separating an image data into a first part and a second part by an image processing module; outputting the first part and the second part from a first connection port and a second connection port of an image processing module to a third connection port and a fourth connection port of a computer device; combining the first part and the second part by a software driver layer of the computer device to obtain combined data; and decoding the combined data by an application layer of the computer device to display the image data. Wherein the first connection port and the second connection port have the same transmission specification, and the first part and the second part have the same size in each frame of the image data.

Abstract: The present disclosure provides systems and methods for transmitting data to a pair of truly wireless devices. A first device, which may be considered the primary device, may determine a first data packet was received. The first device may also determine the first data packet was not received by a second device of the pair of truly wireless devices. In response to determining the second device did not receive the first data packet, the first device may request the first data packet be retransmitted.

Abstract: An optical sensor device for determining a hydration level information of an object includes a light-emitting element, a light-receiving element, and an analyzer. The light-emitting element is configured to emit a first light at a first wavelength and a second light at a second wavelength. The light-receiving element is configured to receive a first reflected light at the first wavelength and a second reflected light at the second wavelength from the object. The analyzer is configured to perform a hydration measurement to determine the hydration level information. The hydration level information is based on: a first reference signal strength at the first wavelength and a second reference signal strength at the second wavelength obtained from the light-receiving element when the object is not present; and a first signal strength of the first reflected light and a second signal strength of the second reflected light when the object is present.

Abstract: A dynamic correction method for sound reception is adapted for an electronic device. The electronic device includes an audio processor, a microphone signally connected to the audio processor and a sound reception hole corresponding to the microphone. The dynamic correction method for sound reception includes the following steps: the audio processor obtains a first airtight numerical curve according to a numerical difference value between a first frequency response curve and a second frequency response curve to execute a first dynamic correction sound reception program; and the audio processor executes the first dynamic correction sound reception program to obtain an adjusted second frequency response curve.

Abstract: Proteins having luciferse activity are disclosed, having the secondary structure arrangement H1-L1-H2-L2-E1-L3-E2-L4-H3-L5-E3-L6-E4-L7-E5-L8-E6, wherein “H” is a helical domain, “L” is a loop domain, and “E” is a beta strand domain; wherein: (a) the H1 domain is at least 18 or 19 amino acids in length; residue 14 of the H1 domain is Y, D, or E, and residue 18 of the H1 domain is D or E: (b) the E3 domain is at least 6, 7, 8, 9, or 10 amino acids in length and residue 2 of the E3 domain is R; and (c) the E5 domain is at least 10, 11, 12, 13, or 14 amino acids in length and residue 9 of the E5 domain is H or M.

Abstract: Systems, apparatuses, and methods for improved reconfigurable optical sensing are provided. For instance, an example optical sensing apparatus can include a photodetector array including a plurality of photodetectors. The optical sensing apparatus can include circuitry or one or more processing devices configured to receive one or more electrical signals representing an optical signal received by a first subset of the plurality of photodetectors; determine, based on the one or more electrical signals, a region of interest in the photodetector array for optical measurements; and deactivate, based on the region of interest, a second subset of the plurality of photodetectors of the photodetector array.

Abstract: An optical sensor device for object detection includes a light-emitting element configured to emit light to the object, a light-receiving element configured to sense reflected light from the object, a temperature sensor configured to provide a temperature signal in response to an ambient temperature, a temperature compensation unit coupled to the temperature sensor to read the temperature signal and perform a temperature compensation process to generate a compensated signal strength, and an analyzer coupled to the temperature compensation unit and configured to receive the compensated signal strength and generate a detection result.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.