Abstract: A resistor-transistor-logic (RTL) circuit with GaN structure, including a GaN layer, a AlGaN barrier layer on the GaN layer, multiple p-type doped GaN capping layers on the AlGaN barrier layer, wherein parts of the p-type doped GaN capping layers in a high-voltage region and in a low-voltage region convert the underlying GaN layer into gate depletion areas, the GaN layer not covered by the p-type doped GaN capping layers in a resistor region becomes a 2DEG resistor.

Abstract: Systems, apparatuses, and methods for multi-application optical sensing are provided. For example, an optical sensing apparatus can include a photodetector array, a first circuitry, and a second circuitry. The photodetector array includes a plurality of photodetectors, wherein a first subset of the plurality of photodetectors are configured as a first region for detecting a first optical signal, and a second subset of the plurality of photodetectors are configured as a second region for detecting a second optical signal. The first circuitry, coupled to the first region, is configured to perform a first function based on the first optical signal to output a first output result. The second circuitry, coupled to the second region, is configured to perform a second function based on the second optical signal to output a second output result.

Abstract: An electronic package is provided and uses a plurality of bonding wires as a shielding structure. The bonding wires are stitch bonded onto a carrier carrying electronic components, such that the problem of the shielding structure peeling off or falling off from the carrier can be avoided due to the fact that the bonding wires are not affected by temperature, humidity and other environmental factors.

Abstract: A semiconductor memory structure includes a substrate having thereon a transistor forming region and a capacitor forming region. A transistor is disposed on the substrate within the transistor forming region. A capacitor is disposed within the capacitor forming region and electrically coupled to the transistor. A first inter-layer dielectric layer covers the transistor forming region and the capacitor forming region. The first inter-layer dielectric layer surrounds a metal gate of the transistor and a bottom plate of the capacitor. A cap layer is disposed on the first inter-layer dielectric layer. The cap layer has a first thickness within the transistor forming region and a second thickness within the capacitor forming region. The first thickness is greater than the second thickness. The cap layer within the capacitor forming region acts as a capacitor dielectric layer of the capacitor.

Abstract: A buckle device capable of displaying a locked state includes a main body unit, a latch unit, a fastening unit, an electromagnetic unit, and a control unit. The main body unit includes a main body and the latch unit includes a detachable tongue element. The fastening unit includes a bolt body interfering with the tongue element. The electromagnetic unit includes an electromagnetic module and an electromagnetic rod. The electromagnetic module controls the electromagnetic rod to interfere with the bolt body. The control unit includes a control module, a display module and a magnetic rod detection module for detecting the position of the electromagnetic rod. The control unit receives detection information of the magnetic bolt detection module and controls the display module to display a current state according to the position of the at least one electromagnetic rod.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A digital-pointer interaction system is provided, which includes a display apparatus, a host, a wireless receiving device, and a plurality of wireless pointer devices. The host plays a display screen on the display apparatus, and executes a digital-pointer application. The digital-pointer application renders a plurality of pointer cursors on the display screen according to a number of wireless pointer devices connected to the wireless receiving device, and each wireless pointer device corresponds to each pointer cursor. Each wireless pointer device periodically emits an indication signal to the wireless receiving device, and the wireless receiving device transmits the indication signal to the host. The indication signal includes displacement information of each wireless pointer device. The digital-pointer application controls movement of each pointer cursor on the display screen according to the displacement information of each wireless pointer device.

Abstract: A kinetic energy recovery system with flywheel includes a cascade flywheel doubly-fed electric machine and an electric motor. The cascade flywheel doubly-fed electric machine has a stator end coil, a rotor end coil and a flywheel. The flywheel can store kinetic energy by increasing speed or releasing kinetic energy by decreasing speed. A control circuit has an inverter, a rectifier and a DC bus connecting the inverter and the rectifier. The inverter supplies alternating current to the rotor end coil. The rectifier has an AC end connected to the stator end coil through an AC bus. The rectifier converts alternating current to direct current, so that the inverter can draw power from the DC bus. The electric motor has a phase coil connected to the AC bus. When the cascade flywheel double-fed electric machine decelerates, the system converts mechanical energy into electrical energy.

Abstract: A high chromium and silicon-rich corrosion resistant steel is disclosed, which comprises, in weight percent: 22-30% Cr, 2-10% Si, and the balance Fe and incidental impurities, of which a content amount of Cr and Si is less than 37%. Experimental data reveal that, samples of the high chromium and silicon-rich corrosion resistant steel all have a pitting potential greater than 0.8 V and a hardness in a range between HV170 and HV500 in the as-homogenized condition. As a result, experimental data have proved that the high chromium and silicon-rich corrosion resistant steel of the present invention can replace conventional stainless steels having poor pitting resistance like type 304 and type 316 L, and then be adopted for the applications of components and/or structural parts requiring high corrosion resistance.

Abstract: A magnetoresistive random access memory (MRAM) includes a first transistor and a second transistor on a substrate, a source line coupled to a first source/drain region of the first transistor, and a first metal interconnection coupled to a second source/drain region of the first transistor. Preferably, the first metal interconnection is extended to overlap the first transistor and the second transistor and the first metal interconnection further includes a first end coupled to the second source/drain region of the first transistor and a second end coupled to a magnetic tunneling junction (MTJ).

Abstract: A personalized voice conversion system includes a cloud server and an intelligent device that communicates with the cloud server. The intelligent device upstreams an original voice signal to the cloud server. The cloud server converts the original voice signal into an intelligible voice signal based on an intelligible voice conversion model. The intelligent device downloads and plays the intelligible voice signal. Based on the original voice signal and the corresponding intelligible voice signal, the cloud server and the intelligent device train an off-line voice conversion model provided to the intelligent device. When the intelligent device stops communicating with the cloud server, the intelligent device converts a new original voice signal into a new intelligible voice signal based on the off-line voice conversion model and plays the new intelligible voice signal.

Abstract: An electronic package is provided, in which a carrier structure provided with electronic components is disposed onto an antenna structure, where a stepped portion is formed at an edge of the antenna structure, so that a shielding body is arranged along a surface of the stepped portion. Therefore, the shielding body only covers a part of the surface of the antenna structure to prevent the shielding body from interfering with operation of the antenna structure.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Abstract: A one-time programmable (OTP) memory cell includes a substrate having a first conductivity type and having an active area surrounded by an isolation region, a transistor disposed on the active area, and a capacitor disposed on the active area and electrically coupled to the transistor. The capacitor comprises a diffusion region of a second conductivity type in the substrate, a metallic film in direct contact with the active area, a capacitor dielectric layer on the metallic film, and a metal gate surrounded by the capacitor dielectric layer. The diffusion region and the metallic film constitute a capacitor bottom plate.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: A high strength and corrosion resistant ferrochrome alloy bulk is disclosed, which comprises, in weight percent: 30-68% Cr, 1.5-8% Ni, 1.6-6% C, and the balance Fe and incidental impurities, of which a Fe/Ni ratio is in a range from 5 to 10 and a Cr/C ratio is in a range between 10 and 33. Experimental data reveal that, samples of the high strength and corrosion resistant ferrochrome alloy bulk all possess hardness above HV400 and excellent corrosion resistance due to the high content of Cr. As a result, experimental data have proved that the high-strength and corrosion-resistant ferrochrome alloy bulk of the present invention has a significant potential to replace conventional high-strength stainless steels, so as to be widely applied in various industrial fields, e.g., aviation, transportation, marine facility components, chemical equipment and pipe fittings, engine parts, turbine blades, valves, bearings, building materials, and so on.

Abstract: A control system includes a plurality of driving circuits coupled in series, which include a first driving circuit and a second driving circuit. The first driving circuit includes a first receiver, a first transmitter and a first flag signal selector. The first transmitter is coupled to the first receiver, and the first flag signal selector is coupled between the first receiver and the first transmitter. The second driving circuit, coupled to the first driving circuit, includes a second receiver, a second transmitter and a second flag signal selector. The second transmitter is coupled to the second receiver, and the second flag signal selector is coupled between the second receiver and the second transmitter.

Abstract: A LED driving apparatus with clock embedded cascaded LED drivers is introduced, including: a plurality of LED drivers, wherein the first stage LED driver receives an original data signal and outputs a first data signal, the Nth stage LED driver receives a (N?1)th data signal and outputs a Nth data signal. The Nth stage LED driver includes a clock data recovery circuit generating a recovery clock signal and a recovery data signal according to the (N?1)th data signal; and a first transmitter outputting the Nth data signal according to the recovery clock signal and the recovery data signal.

Abstract: An electronic apparatus and a power management method thereof are provided. The power management method is adapted to the electronic apparatus and includes the following steps. A target time is obtained according to a user input. A remaining demand time is determined according to the target time and an elapsed time after activating timing. A time-to-empty of a battery device is obtained. The time-to-empty of the battery device and the remaining demand time are compared to provide a visual notification and a user behavior suggestion message according to the comparison result. The user behavior suggestion message includes at least one power saving operation.

Abstract: An electronic package is provided and uses a plurality of bonding wires as a shielding structure. The bonding wires are stitch bonded onto a carrier carrying electronic components, such that the problem of the shielding structure peeling off or falling off from the carrier can be avoided due to the fact that the bonding wires are not affected by temperature, humidity and other environmental factors.