Patents by Inventor Wei Yin

Wei Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10386509
    Abstract: The disclosed technology relates to a ray energy calibration device and method, and a ray imaging system. In one aspect, the ray energy calibration device includes a plurality of wheels arranged to be rotatable about a common shaft and each provided with one or more protruding blocks at respective specific positions of an outer circumference thereof. The ray energy calibration device further includes a plurality of calibration members, with each of the calibration members being configured such that through rotation of a corresponding one of the wheels, the calibration member can be moved to a calibration position by the protruding block at a specific position on the outer circumference of the wheel.
    Type: Grant
    Filed: September 19, 2018
    Date of Patent: August 20, 2019
    Assignee: Nuctech Company Limited
    Inventors: Yumei Chen, Xinshui Yan, Quanwei Song, Wei Yin, Weiqiang Guan
  • Patent number: 10382040
    Abstract: A high voltage level shifting circuit and related semiconductor devices are presented. The circuit comprises: a level conversion circuit that converts an input signal with a first high voltage to an output signal with a second high voltage; a first switch having a first node connected to a first power source and a second node connected to a control node of a first transistor; a second switch having a first node connected to the control node of the first transistor and a second node connected to a first connection node; and a switch control circuit connected to the first switch and the second switch and controls them not to be close at the same time. By adding these two switches to the level conversion circuit, this inventive concept substantially lowers the static current generated during a high voltage level conversion process.
    Type: Grant
    Filed: July 20, 2018
    Date of Patent: August 13, 2019
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Yi Jin Kwon, Hao Ni, Chang Wei Yin, Hong Yu
  • Patent number: 10357500
    Abstract: Use of 5?-androstane-3?,5,6?-triol and analogs thereof in the preparation of a drug for the prophylaxis or treatment of an altitude sickness caused by hypobaric hypoxia is provided, so as to provide a new drug for the prophylaxis or treatment of an altitude sickness. Researches revealed that 5?-androstane-3?,5,6?-triol treatment can effectively reduce vasogenic edema of brain tissue of Macaca fascicularis caused by hypobaric hypoxia, reduce the increased cerebral water content, and protect from neuronal vacuolar degeneration caused by hypobaric hypoxia, therefore it can improve neurological dysfunctions caused by hypobaric hypoxia and is useful in prophylaxis or treatment of an altitude sickness.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: July 23, 2019
    Assignee: Guangzhou Cellprotek Pharmaceutical Co., Ltd.
    Inventors: Wei Yin, Jiesi Chen, Guangmei Yan, Bingzheng Lu, Wenbo Zhu, Haiyan Hu, Pengxin Qiu, Yijun Huang, Jingxia Zhang
  • Patent number: 10340783
    Abstract: The present invention provides a pulse modulating power source, which comprises: a plurality of discharging modules connected in series during discharging; a plurality of triggers corresponding to said plurality of discharging modules, wherein each trigger provides a trigger signal to the corresponding discharging module to turn it on; a control logic module for controlling the trigger signals so as to turn on said plurality of discharging modules successively with a time delay; an output terminal for outputting a voltage.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: July 2, 2019
    Assignees: Nuctech Company Limited, Tsinghua University
    Inventors: Yaohong Liu, Chuanxiang Tang, Xinshui Yan, Wei Jia, Jianjun Gao, Jinsheng Liu, Wei Yin, Xiying Liu, Hao Shi
  • Publication number: 20190183948
    Abstract: This invention belongs to the field of biomedicine and relates to use of Bcl-xL inhibitor and oncolytic virus in the preparation of an anti-tumor drug. The present invention firstly discovers that the Bcl-xL inhibitor can be used as an anti-tumor synergist for oncolytic virus. The present invention also relates to a pharmaceutical composition comprising Bcl-xL inhibitor and oncolytic virus, a pharmaceutical kit comprising Bcl-xL inhibitor and oncolytic virus, and use of Bcl-xL inhibitor and oncolytic virus for treating tumors, especially, tumors that are not sensitive to the oncolytic virus.
    Type: Application
    Filed: August 18, 2017
    Publication date: June 20, 2019
    Applicant: GUANGZHOU VIROTECH PHARMACEUTICAL CO., LTD.
    Inventors: Guangmei YAN, Yaqian TAN, Yuan LIN, Haipeng ZHANG, Suizhen LIN, Shoufang GONG, Jun HU, Xiao XIAO, Kai LI, Jiankai LIANG, Jing CAI, Wenbo ZHU, Wei YIN
  • Patent number: 10325912
    Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ryan Chia-Jen Chen, Li-Wei Yin, Tzu-Wen Pan, Yi-Chun Chen, Cheng-Chung Chang, Shao-Hua Hsu, Yu-Hsien Lin, Ming-Ching Chang
  • Publication number: 20190170894
    Abstract: This invention provides a scan method, scan system and radiation scan controller, and relates to the field of radiation. The scanning method includes obtaining detection data of an object to be inspected under radiation scanning using a detector, adjusting an accelerator output beam dose rate and/or an output electron beam energy level of a radiation emission device according to the detection data. With this method, working conditions of the accelerator of the radiation emission device may be adjusted according to the detection data detected by the detector, so that for a region having a larger mass thickness, a higher output beam dose rate or a higher electron beam output energy level is adopted to guarantee satisfied imaging technical indexes, for a region having a smaller mass thickness, a lower output beam dose rate or a lower electron beam output energy level is adopted to reduce the environmental dose level while guaranteeing satisfied imaging technical indexes.
    Type: Application
    Filed: January 22, 2019
    Publication date: June 6, 2019
    Inventors: Kejun KANG, Yaohong LIU, Ziran ZHAO, Wei JIA, Jianping GU, Chuanxiang TANG, Huaibi CHEN, Jianjun GAO, Wei YIN, Xiying LIU
  • Publication number: 20190167737
    Abstract: Described herein is use of a Caspase activator and an oncolytic virus in the preparation of an anti-tumor drug. As described, Caspase activator can enhance the anti-tumor effect of oncolytic virus, and the combination of Caspase activator and oncolytic virus produces a significant synergistic anti-tumor effect, and demonstrates an effective therapy for the treatment of tumors that are less sensitive to other pharmaceutical treatments.
    Type: Application
    Filed: August 18, 2017
    Publication date: June 6, 2019
    Applicant: Guangzhou Virotech Pharmaceutical Co., Ltd.
    Inventors: Guangmei YAN, Jing CAI, Yuan LIN, Haipeng ZHANG, Suizhen LIN, Shoufang GONG, Jun HU, Xiao XIAO, Kai LI, Jiankai LIANG, Yaqian TAN, Wenbo ZHU, Wei YIN
  • Publication number: 20190167641
    Abstract: The present invention belongs to the field of biomedicine and relates to use of VCP (valosin-containing protein, VCP) inhibitor and oncolytic virus in the preparation of an anti-tumor drug. The present invention firstly discovers that VCP inhibitor can be used in the preparation of an anti-tumor synergist for oncolytic virus. Meanwhile, the present invention relates to a pharmaceutical composition comprising VCP inhibitor and oncolytic virus, a pharmaceutical kit comprising VCP inhibitor and oncolytic virus, and use of VCP inhibitor and oncolytic virus for treating tumor, especially a tumor that is not sensitive to oncolytic virus. The present invention also relates to an anti-tumor administration system, characterized in that, comprising oncolytic virus and a reagent for detecting the expression level of VCP.
    Type: Application
    Filed: August 18, 2017
    Publication date: June 6, 2019
    Applicant: Guangzhou Virotech Pharmaceutical Co., Ltd.
    Inventors: Guangmei YAN, Haipeng ZHANG, Yuan LIN, Suizhen LIN, Jing CAI, Shoufang GONG, Jun HU, Xiao XIAO, Kai LI, Jiankai LIANG, Yaqian TAN, Wenbo ZHU, Wei YIN
  • Publication number: 20190165137
    Abstract: Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.
    Type: Application
    Filed: March 1, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ryan Chia-Jen CHEN, Ming-Ching CHANG, Yi-Chun CHEN, Yu-Hsien LIN, Li-Wei YIN, Tzu-Wen PAN, Cheng-Chung CHANG, Shao-Hua HSU
  • Patent number: 10301939
    Abstract: Disclosed is a method for designing supporting parameters of a transition support for a mixed mining face of filling and fully-mechanized mining.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: May 28, 2019
    Assignees: CHINA UNIVERSITY OF MINING AND TECHNOLOGY, Pingdingshan Tianan Coal Mining Co., LTD, China Pingmei Shenma Energy and Chemical Industry Group Co., LTD, Xuzhou ZhongAn Science & Technology Co., Ltd.
    Inventors: Jixiong Zhang, Jianguo Zhang, Qiang Zhang, Qiang Sun, Wei Yin, WeiQing Zhang, Hao Yan
  • Publication number: 20190139969
    Abstract: A method includes providing metal gate structures in a first and a second region, respectively, of a semiconductor substrate, simultaneously cutting the metal gate structures by a two-step etching process to form a first and a second trench in metal gate structures of the first and the second region, respectively, and filling each trench with an insulating material to form a first and a second gate isolation structure. Each step of the two-step etching process employs different etching chemicals and conditions. The metal gate structures in the first region and the second region differ in gate lengths and composition of gate electrode.
    Type: Application
    Filed: November 9, 2017
    Publication date: May 9, 2019
    Inventors: Li-Wei Yin, Shu-Yuan Ku, Chun-Fai Cheng
  • Publication number: 20190131298
    Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.
    Type: Application
    Filed: November 30, 2018
    Publication date: May 2, 2019
    Inventors: Ryan Chia-Jen Chen, Cheng-Chung Chang, Shao-Hua Hsu, Yu-Hsien Lin, Ming-Ching Chang, Li-Wei Yin, Tzu-Wen Pan, Yi-Chun Chen
  • Publication number: 20190131297
    Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 2, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: RYAN CHIA-JEN CHEN, LI-WEI YIN, TZU-WEN PAN, YI-CHUN CHEN, CHENG-CHUNG CHANG, SHAO-HUA HSU, YU-HSIEN LIN, MING-CHING CHANG
  • Publication number: 20190122781
    Abstract: The present disclosure discloses a photoneutron source and a neutron inspection system. The photoneutron source comprises: an electron accelerating tube for accelerating an electron beam; an X-ray converting target, and the electron beam accelerated by the electron accelerating tube bombards the X-ray converting target to generate X-rays; a photoneutron target, and the X-rays enters the photoneutron target to generates photoneutrons; and a neutron modulation housing provided outside the photoneutron target, and the neutron modulation housing comprises a neutron collimation port for outputting photoneutrons. The present disclosure may directly output a desired neutron beam from the neutron collimation port of the photoneutron source.
    Type: Application
    Filed: October 19, 2018
    Publication date: April 25, 2019
    Inventors: Yigang YANG, Jianmin LI, Dongyu WANG, Hao YU, Weizhen WANG, Weiqiang GUAN, Wei YIN, Wei LI, Quanwei SONG, Yulan LI, Chunguang ZONG, Yaohong LIU, Yuanjing LI, Zhiqiang CHEN, Li ZHANG
  • Publication number: 20190091331
    Abstract: A bispecific antibody that simultaneously targets humanized p185 and VEGF, consisting of the four peptide chains: two identical antibody light chains that are the light chains of the antibody that identify the epitope or antigen of p185, and two identical antibody heavy chains that have the amino acid sequence of a recombinant antibody from N- to C-terminus, a light chain sequence of the antibody that recognizes the p185 epitope or the antigen; a constant heavy chain region; a flexible short peptide sequence; and either a single-stranded variable region sequence (ScFv) of anti-VEGF antibody which recognizes the VEGF epitope or antigen, or a receptor domain sequence that binds to VEGF. The bispecific antibody has the ability to bind p185 and VEGF at the same time, inhibits the proliferation of tumor cells, and promotes the expression of IFN-? by T lymphocytes; it may be applied as anti-tumor antibody drug.
    Type: Application
    Filed: December 26, 2017
    Publication date: March 28, 2019
    Inventors: Yang YANG, Wei Yin
  • Publication number: 20190036532
    Abstract: A high voltage level shifting circuit and related semiconductor devices are presented. The circuit comprises: a level conversion circuit that converts an input signal with a first high voltage to an output signal with a second high voltage; a first switch having a first node connected to a first power source and a second node connected to a control node of a first transistor; a second switch having a first node connected to the control node of the first transistor and a second node connected to a first connection node; and a switch control circuit connected to the first switch and the second switch and controls them not to be close at the same time. By adding these two switches to the level conversion circuit, this inventive concept substantially lowers the static current generated during a high voltage level conversion process.
    Type: Application
    Filed: July 20, 2018
    Publication date: January 31, 2019
    Inventors: Yi Jin Kwon, Hao Ni, Chang Wei Yin, Hong Yu
  • Publication number: 20190033475
    Abstract: The disclosed technology relates to a ray energy calibration device and method, and a ray imaging system. In one aspect, the ray energy calibration device includes a plurality of wheels arranged to be rotatable about a common shaft and each provided with one or more protruding blocks at respective specific positions of an outer circumference thereof. The ray energy calibration device further includes a plurality of calibration members, with each of the calibration members being configured such that through rotation of a corresponding one of the wheels, the calibration member can be moved to a calibration position by the protruding block at a specific position on the outer circumference of the wheel.
    Type: Application
    Filed: September 19, 2018
    Publication date: January 31, 2019
    Inventors: Yumei Chen, Xinshui Yan, Quanwei Song, Wei Yin, Weiqiang Guan
  • Publication number: 20180314770
    Abstract: Disclosed is a method for designing supporting parameters of a transition support for a mixed mining face of filling and fully-mechanized mining.
    Type: Application
    Filed: November 18, 2016
    Publication date: November 1, 2018
    Applicant: CHINA UNIVERSITY OF MINING AND TECHNOLOGY
    Inventors: Jixiong ZHANG, Qiang SUN, Qiang ZHANG, Wei YIN, Hao YAN
  • Patent number: 10116071
    Abstract: An electrical connector includes an insulative housing defining a top surface and a bottom surface opposite to each other and a plurality of electrical contacts received in the insulative housing. Each electrical contact is formed by stamping a metal plate and includes a contacting portion exposed to the top surface, a mounting portion extending out of the bottom surface and an elastic portion disposed between the contacting portion and the mounting portion and in the insulative housing, wherein the elastic portion includes a first elastic portion and a second elastic portion disposed on two opposite sides of the contacting portion.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: October 30, 2018
    Assignee: FOXCONN INTERCONNECT TECHNOLOGY LIMITED
    Inventors: Xin-Tian Li, Wei Yin, Ji-Wang Jin, Bin Peng, Zhi-Jian Chen