Patents by Inventor Wei Yuan

Wei Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230378270
    Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 23, 2023
    Inventors: I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chun-An Lin, Wei-Yuan Lu, Guan-Ren Wang, Peng Wang
  • Patent number: 11824121
    Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.
    Type: Grant
    Filed: March 27, 2023
    Date of Patent: November 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ta Yu, Yen-Chieh Huang, Wei-Yuan Lu, Feng-Cheng Yang, Yen-Ming Chen
  • Patent number: 11813277
    Abstract: Methods and agents for modulating intracellular coenzyme A levels are described for therapeutic purposes. Increasing intracellular coenzyme A increases alternate macrophage activation resulting in suppression or resolution of an immune response for benefit in treating inflammatory diseases. Decreasing intracellular coenzyme A levels decreases alternate macrophage activation which is beneficial in treating NASH/NAFLD and various fibrotic diseases as well as reversing immune suppressing activity of tumor-associated immune cells such as macrophages for the treatment of cancer.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: November 14, 2023
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Ajit Srinivas Divakaruni, Steven J. Bensinger, Anne Neville Murphy, Wei Yuan Hsieh
  • Publication number: 20230361116
    Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 9, 2023
    Inventors: Wei-Yuan LU, Sai-Hooi YEONG
  • Publication number: 20230362296
    Abstract: Embodiments of this application disclose a call method and an apparatus. In the call method, when a user does not actively select an audio device as a voice pickup device and a voice play device, after establishing a call connection to another electronic device, an electronic device selects, from available audio devices, an audio device that meets a user expectation as the voice pickup device and the voice play device. According to technical solutions provided in the embodiments of this application, user experience in a call process can be improved.
    Type: Application
    Filed: April 21, 2023
    Publication date: November 9, 2023
    Inventors: Fusheng Li, Shengfeng Zhou, Yi Yu, Wei Yuan
  • Patent number: 11800952
    Abstract: A steam valve for a cooking utensil and the cooking utensil are provided. The steam valve includes a valve base, a bonnet and a barrier member. The bonnet and the valve base form a mounting chamber. The valve base has a steam inlet, and at least one of the valve base and the bonnet has a steam outlet. The barrier member is mounted in the mounting chamber, the barrier member and a top wall of the bonnet define a first passage therebetween, steam flows from the steam inlet via the first passage to the steam outlet, and a bottom wall of the valve base corresponding to the barrier member is disposed obliquely such that liquid flows back to the steam inlet.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: October 31, 2023
    Assignee: FOSHAN SHUNDE MIDEA ELECTRICAL HEATING APPLIANCES MANUFACTURING CO., LTD.
    Inventors: Wei Chen, Chuanbin Zhu, Wei Yuan, Zhengting Fu, Yuquan Wu, Xianhuai Chen, Linbo Zhu, Fei Lou
  • Patent number: 11800975
    Abstract: An example apparatus for predicting eye fatigue includes an image receiver to receive an image of an eye. The apparatus also includes a fatigue predictor to predict eye fatigue in the eye based on a calculated blood vessel density score of the eye in the image. The apparatus further includes an alert generator to generate an alert in response to predicting the eye fatigue.
    Type: Grant
    Filed: August 10, 2020
    Date of Patent: October 31, 2023
    Assignee: Intel Corporation
    Inventors: Sheow Ong, Wei Yuan Kong, Kar Mun Tham
  • Publication number: 20230339785
    Abstract: The present disclosure relates to a deep purification device and method for methanol-to-olefin washing water. Provided is a deep purification device for methanol-to-olefin washing water, comprising: a quench tower (1-1), a water washing tower (1-2) connected to an outlet at the top of the quench tower (1-1), a boiling bed separator (1-3) having the top thereof connected to the bottom of the water washing tower (1-2), a fiber coalescer (1-4) connected to the bottom of the boiling bed separator (1-3), and a buffer settling tank (1-5) connected to the sidewall of the boiling bed separator (1-3) at a position near the top. Further provided is a deep purification method for methanol-to-olefin washing water.
    Type: Application
    Filed: September 17, 2020
    Publication date: October 26, 2023
    Applicants: East China University of Science and Technology, Shanghai Huachang Environmental Protection Co., Ltd, Shaanxi Petroleum Yanan Energy Chemical Industry Limited Liability Company
    Inventors: Jianqi CHEN, Hualin WANG, Wenjie LV, Ting LEI, Liang CHEN, Tianxiang WANG, Xiaobin XUE, Bing LIU, Xin CUI, Weichi SANG, Jinsong WANG, Jinlan FENG, Hongpeng MA, Wei YUAN, Bin HU, Yujie JI
  • Patent number: 11798941
    Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.
    Type: Grant
    Filed: November 16, 2020
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Yuan Lu, Sai-Hooi Yeong
  • Patent number: 11797730
    Abstract: A computer-implemented method for meshing a model of a physical electro-magnetic assembly is disclosed. The method includes separating the base mesh of the model into two domains and freezing the boundary between these domains. Each domain is then sent for mesh refinement by separate computer processors. Each computer processor generates a refined mesh of the respective domain without communication between processors. Two-way boundary mesh mapping is then performed, resulting in a global conformal mesh. Surface recovery and identity assignment are then performed by separate computer processors in parallel for each domain, without communication between processors. Related apparatus, systems, techniques, methods and articles are also described.
    Type: Grant
    Filed: August 26, 2019
    Date of Patent: October 24, 2023
    Assignee: ANSYS Inc.
    Inventors: Wei Yuan, Yunjun Wu
  • Publication number: 20230334629
    Abstract: A method for labeling an image object and a circuit system are provided. In the method, an object classification method is used to segment an image into one or more regions. Each of the regions can be classified into one classification assigned with a classification label. A depth estimation method is used to estimate a depth of each pixel of the image. Whether or not the depth of the pixel matches the classification of the region to which the pixel belongs is determined. When the depth of the pixel matches the classification of the region, a post-processing process is performed on the image based on weights assigned to the regions according to the classification label of the region. Conversely, when the depth of the pixel does not match the classification of the region, the pixel is regarded as noise that does not require the post-processing process.
    Type: Application
    Filed: April 14, 2023
    Publication date: October 19, 2023
    Inventors: YEN-YING CHEN, WEI-YUAN HSU, CHIA-WEI YU
  • Patent number: 11791402
    Abstract: A method according to the present disclosure includes depositing, over a substrate, a stack including channel layers interleaved by sacrificial layers, forming a first fin structure and a second fin in a first area and a second area of the substrate, depositing a first dummy gate stack over the first fin structure and a second dummy gate stack over the second fin structure, recessing source/drain regions of the first fin structure and second fin structure to form first source/drain trenches and second source/drain trenches, selectively and partially etching the sacrificial layers to form first inner spacer recesses and second inner spacer recesses, forming first inner spacer features in the first inner spacer recesses, and forming second inner spacer features in the second inner spacer recesses. A composition of the first inner spacer features is different from a composition of the second inner spacer features.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: October 17, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Jen Lai, Wei-Yuan Lu, Chia-Pin Lin
  • Patent number: 11791335
    Abstract: A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: October 17, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chung-Te Lin, Wei-Yuan Lu, Feng-Cheng Yang
  • Publication number: 20230326421
    Abstract: A light-emitting assembly includes a substrate and a plurality of light-emitting elements disposed on the substrate. The substrate includes a base material layer, a first electrical conductive layer and a protection layer in a sectional view. A thickness of the first electrical conductive layer is greater than a thickness of the protection layer. The thickness of the protection layer is greater than 0 ?m and less than 30 ?m. This disclosure can improve the non-uniform brightness issue (hotspots) or enhance the optical performance.
    Type: Application
    Filed: June 14, 2023
    Publication date: October 12, 2023
    Inventors: Chung-Chun KUO, Chun-Fang CHEN, Hui-Wen SU, Wei-Yuan CHEN, Chung-Yu CHENG
  • Publication number: 20230323083
    Abstract: A plastic composition includes at least one plastic and at least one plasticizer. The plastic include a polylactic acid. The plasticizer includes an amide ester compound, and the amide ester compound has the biodegradability. The weight percentage of the plastic in the plastic composition is 85% to 99.99%, and the weight percentage of the plasticizer in the plastic composition is 0.01% to 15%.
    Type: Application
    Filed: March 15, 2023
    Publication date: October 12, 2023
    Inventors: Wei-Yuan CHEN, Po-Tsun CHEN, Tzu-Rong LU, Rih-Sian CHEN, Yu Jie HONG, Chun-Hung TENG
  • Patent number: 11784222
    Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: October 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Chun-An Lin, Wei-Yuan Lu, Guan-Ren Wang, Peng Wang
  • Patent number: 11782294
    Abstract: A contact lens product includes a multifocal contact lens and a buffer solution. The multifocal contact lens is immersed in the buffer solution. The multifocal contact lens includes a central region and at least one annular region. The annular region concentrically surrounds the central region, and a diopter of the annular region is different from a diopter of the central region. The multifocal contact lens is made of silicone hydrogel or hydrogel. The annular region closest to a periphery of the multifocal contact lens is a first annular region.
    Type: Grant
    Filed: September 14, 2020
    Date of Patent: October 10, 2023
    Assignee: LARGAN MEDICAL CO., LTD.
    Inventors: En-Ping Lin, Wei-Yuan Chen, Chun-Hung Teng
  • Patent number: 11782350
    Abstract: A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: October 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Hua Wang, Chueh-Chi Kuo, Kuei-Lin Ho, Zong-You Yang, Cheng-Wei Sun, Wei-Yuan Chen, Cheng-Chieh Chen, Heng-Hsin Liu, Li-Jui Chen
  • Publication number: 20230256114
    Abstract: The present invention describes novel maytansinoid and ansamitosin derivatives and methods for preparing payloads thereof bearing a linker with a functional group for conjugation to cell binding agents to generate cytotoxic drug conjugates. The present invention further relates to antibody drug conjugates conjugated to tumor associated antigen (TAA) antibody, preparation methods, pharmaceutical compositions and uses thereof for the treatment of cancer. The maytansinoid drug linker derivative payloads show increased solubility with decreased aggregation rate compared SMCC-DM1. An antibody drug conjugate containing a maytansinoid drug linker derivative payload and an anti-T rop-2 antibody (e.g., anti-T rop-2-BI-P203) was more or equally potent against Trop-2 high expressing tumors as compared to anti-T rop-2-SMCC-DM 1 or anti-T rop-2-vc-MMAE ADCs, with less effect on low or no antigen expressing cells, suggesting an increased therapeutic window.
    Type: Application
    Filed: July 2, 2021
    Publication date: August 17, 2023
    Inventors: Dingguo LIU, Haifeng BAO, Wei YUAN
  • Patent number: D1001798
    Type: Grant
    Filed: November 23, 2022
    Date of Patent: October 17, 2023
    Inventors: Wei Yuan, Guanwen Chen