Abstract: Systems and methods may use a math programming model for designing an edge cloud network. The edge cloud network design may depend on various factors, including the number of edge cloud nodes, edge cloud node location, or traffic coverage, among other things.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: Embodiments of this application disclose a call method and an apparatus. In the call method, when a user does not actively select an audio device as a voice pickup device and a voice play device, after establishing a call connection to another electronic device, an electronic device selects, from available audio devices, an audio device that meets a user expectation as the voice pickup device and the voice play device. According to technical solutions provided in the embodiments of this application, user experience in a call process can be improved.

Abstract: A method and apparatus for hydrocracking mineralized refuse pyrolysis oil. The method may use the following steps: (a) crushing and pyrolyzing mineralized refuse to obtain arene and alkane precursor biomass oil; (b) hydrogenating the arene and alkane precursor biomass oil obtained in step (a), and separating the obtained hydrocrackate to obtain arene and alkane; and (c) purifying, recovering and optimizing the arene and alkane obtained in step (b), and performing deep processing to produce naphtha, jet fuel, light diesel oil, and heavy diesel oil.

Abstract: A method and apparatus for controlling a virtual object, a terminal, and a storage medium are disclosed. The method includes: acquiring a plurality of images of a user; determining, according to the plurality of images acquired, a gesture change parameter of a gesture change of the user; and controlling, according to the gesture change parameter, a virtual object corresponding to the user.

Abstract: Disclosed are a lithium negative electrode with a protective layer (1), a preparation method and an application thereof. The protective layer (1) of the lithium negative electrode is located on a surface of the electrode, and the protective layer (1) is a lithiated perfluorosulfonic acid membrane doped with nano molybdenum disulfide (3). The preparation method for the lithium negative electrode with the protective layer (1) comprises the following steps of: I. lithiation of a perfluorosulfonic acid; II. loading of the molybdenum disulfide (3); and III. coating and curing of the protective layer (1). The protective layer (1) of the lithium metal negative electrode of a lithium battery is capable of effectively inhibiting lithium dendrites, and weakening a shuttle effect, thereby improving a charge and discharge capacity, a rate capability and a cycle life of a lithium-sulfur battery.

Abstract: An excitation source planning method for an electrical stimulation is proposed to plan an excitation source. A layout importing step is performed to drive a processing unit to import a PCB layout to an electromagnetic simulation software module. A port establishing step is performed to set the excitation source to be vertically disposed between a signal layer and a main ground layer. A model generating step is performed to perform the electrical simulation according to the excitation source to generate a three-dimensional simulation model corresponding to the PCB layout. When the signal layer is not electrically connected to the main ground layer, the electromagnetic simulation software module executes an extending step. The extending step is performed to provide a first metal unit to be connected to the signal layer, and reset the excitation source to be vertically disposed between the first metal unit and the main ground layer.

Abstract: A light emitting element package includes a first substrate, at least one light emitting element, an encapsulation layer, and a plurality of conductive pads. The first substrate has an upper surface and a lower surface opposite to each other, in which an edge of the lower surface has a notch. The at least one light emitting element is disposed on the upper surface of the first substrate, in which the light emitting element has a positive electrode and a negative electrode. The encapsulation layer covers the light emitting element. The plurality of conductive pads are disposed on the lower surface of the first substrate and electrically connected to the positive electrode and the negative electrode of the light emitting element, respectively.

Abstract: A contact lens product includes a contact lens and a buffer solution. The contact lens is immersed in the buffer solution, and the buffer solution includes a cycloplegic agent.

Abstract: The present application provides a semiconductor device and the method of making the same. The method includes recessing a fin extending from a substrate, forming a base epitaxial feature on the recessed fin, forming a bar-like epitaxial feature on the base epitaxial feature, and forming a conformal epitaxial feature on the bar-like epitaxial feature. The forming of the bar-like epitaxial feature includes in-situ doping the bar-like epitaxial feature with an n-type dopant at a first doping concentration. The forming of the conformal epitaxial feature includes in-situ doping the conformal epitaxial feature with a second doping concentration greater than the first doping concentration.

Abstract: A light-emitting assembly includes a substrate and a plurality of light-emitting elements. The substrate includes a component arrangement region and a planar region in a top view, and includes a base material layer, a filled layer and a protection layer in a sectional view. A thickness of the filled layer is greater than a thickness of the protection layer. The thickness of the protection layer is greater than 0 ?m and less than 30 ?m. The plurality of light-emitting elements are located on the component arrangement region. This disclosure can improve the non-uniform brightness issue (hotspots) or enhance the optical performance.

Abstract: A field effect transistor includes a substrate and spacers over the substrate. The field effect transistor includes a channel recess cavity between the spacers, wherein a bottom-most surface of the channel recess cavity is parallel to the substrate top surface. The field effect transistor includes a gate stack, wherein the gate stack includes a bottom portion in the channel recess cavity and a top portion outside the channel recess cavity, the gate stack further includes a gate dielectric layer extending from the channel recess cavity along sidewalls of each of the pair of spacers, and the gate dielectric layer directly contacts the substrate below substrate top surface. The field effect transistor includes a strained source/drain (S/D) below the substrate top surface, wherein the strained S/D extends below the gate stack. The field effect transistor further includes a source/drain (S/D) extension substantially conformably surrounding the strained S/D.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: Provided is a forming method of a redistribution structure including: forming a first redistribution layer and a first compensation circuit layer on a substrate, wherein the first compensation circuit layer surrounds the first redistribution layer, and the first compensation circuit layer and the first redistribution layer are electrically insulated from each other; forming a first dielectric layer on the first redistribution layer and the first compensation circuit layer; and forming a second redistribution layer and a second compensation circuit layer on the first dielectric layer, wherein the second compensation circuit layer surrounds the second redistribution layer, the second compensation circuit layer and the second redistribution layer are electrically insulated from each other, the second compensation circuit layer is connected to the first compensation circuit layer, and the second redistribution layer is connected to the first redistribution layer.

Abstract: A semiconductor structure and a method of forming the same are provided. A semiconductor structure according to the present disclosure includes a first channel member and a second channel member disposed over the first channel member, a first channel extension feature coupled to the first channel member, a second channel extension feature coupled to the second channel member, and an inner spacer feature disposed between the first channel extension feature and the second channel extension feature.

Abstract: The described technology is generally directed towards automated cell parameter updates in cellular networks. A network automation platform architecture is disclosed which includes elements configured to automatically analyze, recalculate, and deploy cell parameters such as PCI and RSI parameters, for cells of a cellular communication network.

Abstract: The present invention provides an organic electroluminescent diode device, a display panel, and a manufacturing method thereof. The organic electroluminescent diode device includes a first electrode layer, a conductive layer, an electron injection layer, a light-emitting layer, a hole injection layer, and a second electrode layer, and the conductive layer is provided between the first electrode layer and the electron injection layer.

Abstract: A sweetness modifying composition comprising a high-intensity sweetener and a low-potency sweetener and a sweetened composition comprising said sweetness modifying composition and at least one other sweetener; the uses of said sweetened compositions and sweetness modifying compositions; methods of making said sweetened compositions and sweetness modifying compositions.

Abstract: A footwear component is disclosed. In various embodiments, the footwear component includes a foam substrate having an upper surface and a lower surface extending in a lateral direction; and a sensing circuit between the upper surface and the lower surface, the sensing circuit including a piezoelectric foam sensor including a piezoelectric foam between a plurality of electrodes, a printed circuit board having a processor electrically connected to the plurality of electrodes by one or more electrical leads, and an antenna electrically connected to the printed circuit board, the antenna being spaced apart from the printed circuit board and the plurality of electrodes in the lateral direction.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.