Abstract: The present disclosure relates to a method and apparatus for prolonging a continuous operation period of a methanol-to-olefins water washing process. The method may perform micro cyclone treatment on methanol-to-olefins washing water. The method may also deliver the washing water subjected to micro cyclone treatment and oil removal to a fluidized bed separator for treatment. The method may also adjust the backwash flow to release the intercepted catalyst powder and empty the dirt holding capacity of a pore. The method may also perform three-phase separation on a gas-liquid-solid mixture subjected to backwash, returning the obtained filter media to a particle bed layer, and respectively discharging a backwashing liquid a backwashing gas which comprise a catalyst. The method may also switch the fluidized bed separator to a normal working state, completing the active regeneration of the particle bed layer, and continuing to operate.

Abstract: A battery material is a core-shell structure, and the core-shell structure includes a core and a shell. The shell surrounds the core. A composition of the core is a silicon material. The shell includes a polymer, the polymer is linear, the polymer includes a first structure and a second structure, the first structure includes a siloxane group, and the second structure includes a carboxyl group or an ester group. The first structure is more adjacent to the core than the second structure.

Abstract: A lithography system includes a table body, a wafer stage, a first sliding member, a second sliding member, a first cable, a first bracket, a rail guide, and a first protective film. The first sliding member is coupled to the wafer stage. The second sliding member is coupled to an edge of the table body, in which the first sliding member is coupled to a track of the second sliding member. The first bracket fixes the first cable, the first bracket being coupled to a roller structure, in which the roller structure includes a body and a wheel coupled to the body. The rail guide confines a movement of the wheel of the roller structure. The first protective film is adhered to a surface of the rail guide, in which the roller structure is moveable along the first protective film on the surface of the rail guide.

Abstract: Semiconductor devices and methods are provided. In an embodiment, a method includes providing a workpiece including a first hard mask layer on a top surface of a substrate, performing an ion implantation process to form a doped region in the substrate, after the performing of the ion implantation process, annealing the workpiece at temperature T1. The method also includes selectively removing the first hard mask layer, after the selectively removing of the first hard mask layer, performing a pre-bake process at temperature T2, and, after the performing of the pre-bake process, epitaxially growing a vertical stack of alternating channel layers and sacrificial layers on the substrate, where the temperature T2 is lower than the temperature T1.

Abstract: A contact lens product includes a multifocal contact lens and a buffer solution. The multifocal contact lens is immersed in the buffer solution. The multifocal contact lens includes a central region and at least one annular region. The annular region concentrically surrounds the central region, and a diopter of the annular region is different from a diopter of the central region. The multifocal contact lens is made of silicone hydrogel or hydrogel. The annular region closest to a periphery of the multifocal contact lens is a first annular region.

Abstract: A consumable is provided. The consumable includes (a) at least one sweetener, and (b) a sweetness modifier comprising an extract or fraction from Stelmatocrypton khasianum or at least one caffeoylquinic acid or tormentic acid compound. The at least one sweetener is present is a sweetening amount.

Abstract: A steel material is disclosed. The steel material includes components in the following mass percentages: 14% to 20% of nickel, 7.5% to 11% of cobalt, 4% to 7% of molybdenum, to 0.5% of rhenium and/or a rare earth element, less than or equal to 0.2% of manganese, less than or equal to 0.2% of silicon, less than or equal to 0.1% of carbon, less than or equal to of oxygen, iron, and inevitable impurities. The steel mechanical part is made of the steel material. The preparation method includes: mixing alloy powder and a binder to prepare feed particles; performing injection molding on the feed particles to obtain an injection green billet of the steel mechanical part; performing debinding and sintering on the injection green billet in sequence to obtain a sintered blank; and performing heat treatment on the sintered blank to obtain the steel mechanical part.

Abstract: A making device of ice balls comprises a refrigeration chamber unit; the refrigeration chamber unit comprises a lower half ball mold body, an upper half ball mold body and a water circulation unit; in addition, a cover plate is arranged above the refrigeration chamber unit, and a water injection hole is arranged on the cover plate; in addition, a plurality of low-temperature condensing tubes are arranged in the lower half ball mold body; in addition, the refrigeration chamber unit further comprises a thermo electric cooler, and a cold end face of the thermo electric cooler is attached to a bottom surface of the lower half ball mold body; the upper half ball mold body is arranged above the lower half ball mold body, a plurality of convection circulation holes are distributed on the upper half ball mold body, and a water inlet hole is arranged in the center of the upper half ball mold body; and the water circulation unit is arranged on the cover plate and comprises a pump, and the pump is respectively connected

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

Abstract: A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: A semiconductor device and method of manufacturing the semiconductor device are provided. An exemplary semiconductor device comprises a fin disposed over a substrate, wherein the fin includes a channel region and a source/drain region; a gate structure disposed over the substrate and over the channel region of the fin; a source/drain feature epitaxially grown in the source/drain region of the fin, wherein the source/drain feature includes a top epitaxial layer and a lower epitaxial layer formed below the top epitaxial layer, and the lower epitaxial layer includes a wavy top surface; and a contact having a wavy bottom surface matingly engaged with the wavy top surface of the lower epitaxial layer of the source/drain feature.

Abstract: Methods and agents for modulating intracellular coenzyme A levels are described for therapeutic purposes. Increasing intracellular coenzyme A increases alternate macrophage activation resulting in suppression or resolution of an immune response for benefit in treating inflammatory diseases. Decreasing intracellular coenzyme A levels decreases alternate macrophage activation which is beneficial in treating NASH/NAFLD and various fibrotic diseases as well as reversing immune suppressing activity of tumor-associated immune cells such as macrophages for the treatment of cancer.

Abstract: Embodiments of this application disclose a call method and an apparatus. In the call method, when a user does not actively select an audio device as a voice pickup device and a voice play device, after establishing a call connection to another electronic device, an electronic device selects, from available audio devices, an audio device that meets a user expectation as the voice pickup device and the voice play device. According to technical solutions provided in the embodiments of this application, user experience in a call process can be improved.

Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.

Abstract: A steam valve for a cooking utensil and the cooking utensil are provided. The steam valve includes a valve base, a bonnet and a barrier member. The bonnet and the valve base form a mounting chamber. The valve base has a steam inlet, and at least one of the valve base and the bonnet has a steam outlet. The barrier member is mounted in the mounting chamber, the barrier member and a top wall of the bonnet define a first passage therebetween, steam flows from the steam inlet via the first passage to the steam outlet, and a bottom wall of the valve base corresponding to the barrier member is disposed obliquely such that liquid flows back to the steam inlet.

Abstract: An example apparatus for predicting eye fatigue includes an image receiver to receive an image of an eye. The apparatus also includes a fatigue predictor to predict eye fatigue in the eye based on a calculated blood vessel density score of the eye in the image. The apparatus further includes an alert generator to generate an alert in response to predicting the eye fatigue.

Abstract: The present disclosure relates to a deep purification device and method for methanol-to-olefin washing water. Provided is a deep purification device for methanol-to-olefin washing water, comprising: a quench tower (1-1), a water washing tower (1-2) connected to an outlet at the top of the quench tower (1-1), a boiling bed separator (1-3) having the top thereof connected to the bottom of the water washing tower (1-2), a fiber coalescer (1-4) connected to the bottom of the boiling bed separator (1-3), and a buffer settling tank (1-5) connected to the sidewall of the boiling bed separator (1-3) at a position near the top. Further provided is a deep purification method for methanol-to-olefin washing water.

Abstract: In in a method of manufacturing a semiconductor device, an interlayer dielectric (ILD) layer is formed over an underlying structure. The underlying structure includes a gate structure disposed over a channel region of a fin structure, and a first source/drain epitaxial layer disposed at a source/drain region of the fin structure. A first opening is formed over the first source/drain epitaxial layer by etching a part of the ILD layer and an upper portion of the first source/drain epitaxial layer. A second source/drain epitaxial layer is formed over the etched first source/drain epitaxial layer. A conductive material is formed over the second source/drain epitaxial layer.

Abstract: A computer-implemented method for meshing a model of a physical electro-magnetic assembly is disclosed. The method includes separating the base mesh of the model into two domains and freezing the boundary between these domains. Each domain is then sent for mesh refinement by separate computer processors. Each computer processor generates a refined mesh of the respective domain without communication between processors. Two-way boundary mesh mapping is then performed, resulting in a global conformal mesh. Surface recovery and identity assignment are then performed by separate computer processors in parallel for each domain, without communication between processors. Related apparatus, systems, techniques, methods and articles are also described.