Abstract: An intelligent air-assisted spraying device for orchards includes a traction mechanism, a spaying system, a collecting system, and a processing-controlling system. The traction mechanism is provided with a spray tank. The spaying system includes a main body connected to the spray tank and multiple spraying tubes, first ends of the spraying tube are communicated with the main body, and second ends of the spraying tubes are capable of rotating. The collecting system is configured to collect a contour and a volume of the canopy, and branch and leaf density of a fruit tree. The processing-controlling system is configured to obtain multiple spraying areas, calculate an air outlet angle of each spraying tube, and control a rotation of the second end of each spraying tube according to the air outlet angle. The device can adjust the spraying direction of each spraying tube, and the quality of pesticide application can be improved.

Abstract: Provided are a method and apparatus for resource configuration for a sidelink in Internet of vehicles. The method includes: a terminal receiving configuration information about a sidelink Bandwidth part (BWP)/resource pool; and the terminal performing sidelink data transmission according to the received configuration information about the sidelink BWP/resource pool.

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

Abstract: An intelligent air-assisted spraying device for orchards includes a traction mechanism, a spaying system, a collecting system, and a processing-controlling system. The traction mechanism is provided with a spray tank. The spaying system includes a main body connected to the spray tank and multiple spraying tubes, first ends of the spraying tube are communicated with the main body, and second ends of the spraying tubes are capable of rotating. The collecting system is configured to collect a contour and a volume of the canopy, and branch and leaf density of a fruit tree. The processing-controlling system is configured to obtain multiple spraying areas, calculate an air outlet angle of each spraying tube, and control a rotation of the second end of each spraying tube according to the air outlet angle. The device can adjust the spraying direction of each spraying tube, and the quality of pesticide application can be improved.

Abstract: Disclosed herein are methods for forming MOSFET trenches with improved corner properties. In some embodiments, a method may include providing a device structure including an epitaxial layer and a hard mask over the epitaxial layer, and forming a trench through the well and the epitaxial layer, wherein the trench is defined by a sidewall, a bottom, and a corner at an intersection of the sidewall and the bottom. The method may further include implanting the device structure by delivering ions into the corner and into the bottom of the trench, and etching the trench to increase rounding of the corner.

Abstract: The present disclosure provides an electrolyte and an energy storage device. The electrolyte includes, by mass of electrolyte, a fluorinated solvent with a mass percentage a, a cyclic carbonate with a mass percentage b, and a lithium hexafluorophosphate with a mass percentage c, wherein 1%?a?30%, 25%?b?45%, and 7%?c?10%.

Abstract: Provided are a control method and device for a data packet duplication function, and a communication device. The control method for the data packet duplication function includes determining, by a communication device, to deactivate or activate a data packet duplication function; and performing, by the communication device, an operation of deactivating or activating the data packet duplication function correspondingly. Further provided is a storage medium.

Abstract: Disclosed herein are methods for forming a buried layer using a low-temperature ion implant. In some embodiments a method may include providing an opening through a mask, wherein the mask is formed directly atop a substrate, and forming a buried layer in the substrate by performing a low-temperature ion implant through the opening of the mask. The method may further include forming an oxide layer over the substrate including over the buried layer.

Abstract: A display panel and a display module are provided. The display panel has a plurality of first light-emitting devices displaying a first color, a plurality of second light-emitting devices displaying a second color, and a plurality of third light-emitting devices displaying a third color, wherein the display panel has a plurality of light-emitting repeating units, and at least one first sub-pixel of each of the plurality of light-emitting repeating units comprises at least two of the first light-emitting devices, the second light-emitting devices, or the third light-emitting devices, all of which are arranged in a stack.

Abstract: Disclosed herein are approaches for forming a uniform film with reduced surface roughness for photonic applications. One method includes providing a workpiece including a contact etch stop layer (CESL) over a device layer, patterning the CESL to expose an upper surface of the device layer in a waveguide target area, and patterning a waveguide from a dielectric film formed over the waveguide target area. The method may further include directing ions into an upper surface of the waveguide using a high-temperature ion implant to decrease a surface roughness of the upper surface of the waveguide.

Abstract: Disclosed herein are methods for backside wafer dopant activation using a low-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a low-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.

Abstract: Disruptions in the continuity of image frames output from an image capture device due to switching from one image sensor to another image sensor of the device may be reduced or eliminated through controlled timing for switching of the image sensors according to a predefined image sensor configuration. Operation of a multi-sensor image device according to the predefined image sensor configuration may include an appropriate selection of a source for image adjustment during the zoom level transition. The predefined image sensor configuration may define transition parameters for particular zoom ranges of the image capture device.

Abstract: A method of processing a semiconductor substrate, including performing a first ion implantation process on the substrate, wherein a first ion beam formed of an ionized first dopant species is directed at a top surface of the substrate and is blocked from a first portion of the substrate while being allowed to implant a second portion of the substrate, and performing a second ion implantation process on the substrate, wherein a second ion beam formed of an ionized second dopant species is directed at the top surface of the substrate and is blocked from the first portion of the substrate while being allowed to implant the second portion of the substrate, wherein an effect of the second ion implantation process on an oxidation rate of the second portion counteracts an effect of the first ion implantation process on the oxidation rate of the second portion.

Abstract: A serum-free complete medium for inducing differentiation of a mesenchymal stem cell to a corneal epithelial cell in the field of differentiation induction of stem cells, prepared by the following method: uniformly mixing the serum-free complete medium, containing 5-10 ?mol of resveratrol, 2-4 ?mol of icariin, 1-3 nmol of aspirin, 1-3 nmol of parathyroid hormone, 5-10 nmol of hydrocortisone, 1-3 mg of rapamycin, 2-10 ?g of testosterone, 2-10 ?g of EPO, 2-10 ?g of LIF and the balance of a corneal epithelial cell serum-free medium in per 1 L; and then performing sterilization by filtration.

Abstract: The present invention discloses a display panel and a method for manufacturing the same. The display panel includes a thin film transistor array layer, a light-emitting device layer, and a thermal thin film layer. By means of connecting in series at least one thermistor in a light-emitting loop constituted by a driving transistor and a light-emitting device, the display panel can reduce or eliminate an influence of temperature on an attenuation of luminous brightness, and can meet the industry-recognized life evaluation standards.

Abstract: The present invention belongs to the field of biomedicine, and relates to an inducer for inducing a mesenchymal stem cell to differentiate into an islet cell. An inducer for inducing a mesenchymal stem cell to differentiate into an islet cell consisted of the following components: GLP-1, parathyroid hormone, paracetamol, rapamycin, icariin, trametinib, EPO and VEGF. Each component in a inducer for inducing a mesenchymal stem cell to differentiate into an islet cell of the present invention is safe and non-toxic, requiring fewer steps and short time to induce differentiation, with high induction efficiency.

Abstract: Disclosed herein are approaches for forming a shallow trench isolation (STI) to improve extremely thin silicon on insulator (ETSOI) device performance. In one approach, a method may include providing a device stack comprising a buried oxide (BOX) layer in a substrate, patterning a hardmask over the substrate, and forming a plurality of isolation regions in the device stack, wherein the plurality of isolation regions extend through the box layer and the substrate. The method may further include forming a well mask over the device stack, wherein an opening through the well mask exposes a first isolation region of the plurality of isolation regions, and modifying a stress of a material of the first isolation region by implanting the first isolation region of the plurality of isolation regions.

Abstract: Methods for processing a dielectric film to improve its uniformity of thickness and refractive index are disclosed. The dielectric film is deposited using conventional approaches, such as chemical vapor deposition (CVD) or spin coating. The workpiece, with the applied dielectric film is then processed to improve the uniformity of the thickness. This processing may comprise implanting a thinning species to the thicker portions of the dielectric film to reduce the thickness of these portions. The thinning species may be silicon or another suitable species. This processing may alternatively or additionally include implanting a thickening species to the thinner portions of the dielectric film to increase their thickness. The thickening species may be helium or another suitable species. This approach may reduce the variation in thickness by 50% or more.

Abstract: Approaches herein decrease nanosheet gate length variations by implanting a gate layer material with ions prior to etching. A method may include forming a dummy gate structure over a nanosheet stack, the dummy gate structure including a hardmask atop a gate material layer, and removing a portion of the hardmask to expose a first area and a second area of the gate material layer. The method may further include implanting the dummy gate structure to modify the first and second areas of the gate material layer, and etching the first and second areas of the gate material layer to form a treated layer along a sidewall of a third area of the gate material layer, wherein the third area is beneath the hardmask.

Abstract: Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured with process steps including multiple proton implant processes where the SiC IGBT device is irradiated with ion to affect proton implantation into the SiC IGBT device at multiple depths in the drift region to reduced minority carrier lifetime.