Abstract: Presented are systems, methods, apparatuses, or computer-readable media for performing beam-switching for user equipment in inactive state using configuration grants. A wireless communication node may send a beam switching configuration for a configured grant to a wireless communication device. The wireless communication node may determine a threshold for beam switching. The wireless communication node may detect, when the wireless communication device is in a radio resource control (RRC) inactive state, that a quality of a beam received via the configured grant is below the threshold.

Abstract: Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured with process steps including multiple proton implant processes where the SiC IGBT device is irradiated with ion to affect proton implantation into the SiC IGBT device at multiple depths in the drift region to reduced minority carrier lifetime.

Abstract: Methods, systems, and computer storage media for providing a dynamically weighted unobserved component model (“DW-UCM”) in a demand forecasting engine of a data analytics system. Dynamic weighting is performed based on a machine learning framework that includes tools, interfaces, and a library for developing improved machine learning models (e.g., dynamic demand forecasting models) of a dynamic weighting machine learning pipeline. In particular, the dynamic weighting machine learning pipeline can include a first module that is configured to predict if a segment (e.g., travel segment) under evaluation is open or closed (e.g., due to a restriction or rule), a second module that forecasts near-term recovery (e.g., approx. 0 - 4 weeks), and a third module that predicts longer term recovery.

Abstract: The present disclosure relates to devices, methods, and computer-readable medium for providing recommendations for alternate resources to use for cloud services. The devices, methods, and computer-readable medium may receive a resource allocation request for a new resource of a computing system and may predict an occurrence of a capacity related allocation for the resource allocation request. The devices, methods, and computer-readable medium may identify alternate resources to use for the resource allocation request and may provide recommendations with the alternate resources.

Abstract: The present invention relates to hemagglutinin-specific antibodies, fragments thereof, and uses thereof. More specifically, these antibodies and fragments thereof are able to recognize antigen from multiple influenza strains.

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

Abstract: A method for dynamic intelligent testing of a target, to be tested according to projects, includes calling up a data distribution model of a project in response to a target being tested by the project, and obtaining a test range corresponding to the project based on the data distribution model. The method further includes obtaining a test value when the target is at a minimum power consumption value by testing the target based on the test range, and updating the data distribution model and the test range of the project based on the test value.

Abstract: Disclosed herein are methods for backside wafer dopant activation using a low-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a low-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.

Abstract: The present invention provides therapeutic and diagnostic methods and compositions for cancer, for example, lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma. The invention provides methods of treating cancer (e.g., lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma), methods of determining whether a patient suffering from cancer (e.g., lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma) is likely to respond to treatment comprising a PD-L1 axis binding antagonist, methods of predicting responsiveness of a patient suffering from cancer (e.g., lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma) to treatment comprising a PD-L1 axis binding antagonist, and methods of selecting a therapy for a patient suffering from cancer (e.g.

Abstract: Disclosed herein are methods for forming a buried layer using a low-temperature ion implant. In some embodiments a method may include providing an opening through a mask, wherein the mask is formed directly atop a substrate, and forming a buried layer in the substrate by performing a low-temperature ion implant through the opening of the mask. The method may further include forming an oxide layer over the substrate including over the buried layer.

Abstract: Disclosed herein are methods for backside wafer dopant activation using a high-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a high-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.

Abstract: A method for performing an ion implantation process including providing a hardmask layer disposed atop a substrate, providing a photoresist layer disposed atop the hardmask layer and defining a pattern exposing a portion of the hardmask layer, performing a room temperature ion implantation process wherein an ion beam formed of an ionized first dopant species is directed onto the exposed portion of the hardmask layer to make the exposed portion more susceptible to ion etching or wet etching, performing an etching process wherein the exposed portion of the hardmask layer is etched away to expose an underlying portion of the substrate, and performing a high energy, hot ion implantation process wherein an ion beam formed of a ionized second dopant species is directed onto the exposed portion of the substrate.

Abstract: A method may include providing a device structure in the semiconductor device. The device structure may include a buried device contact, a first dielectric layer, disposed over the buried device contact; and a device element, where the device element includes a TiN layer. The method may include implanting an ion species into the TiN layer, wherein the ion species comprises a seed material for selective tungsten deposition.

Abstract: Provided are a method and device for adjusting a deep learning network, a server and a storage medium. The method includes acquiring an initial data streaming computation graph that includes first operators for computing initial constant expressions; and obtaining a target data streaming computation graph according to parameters in the initial constant expressions. The target data streaming computation graph includes a second operator and is used for controlling a deep learning acceleration chip to perform data computation. The granularity of the second operator is larger than the granularity of a first operator to enable an adjustment of the amount of computation of the deep learning acceleration chip.

Abstract: The present disclosure relates to devices, methods, and computer-readable medium for providing recommendations for alternate resources to use for cloud services. The devices, methods, and computer-readable medium may receive a resource allocation request for a new resource of a computing system and may predict an occurrence of a capacity related allocation for the resource allocation request. The devices, methods, and computer-readable medium may identify alternate resources to use for the resource allocation request and may provide recommendations with the alternate resources.

Abstract: Methods for fabricating SiC MOSFETs using channeled ion implants are disclosed. By aligning the workpiece such that the ions pass through channels in the SiC hexagonal crystalline structure, it is possible to achieve deeper implants than are otherwise possible. Further, it was found that these channeled implants can be tailored to achieve box-like dopant concentrations. This allows channeled ion implants to be used to create the current spreading layer of the MOSFET, which is conventional fabricated using epitaxial growth. Further, these channeled implants can also be used to create the shields between adjacent transistors. Additionally, the use of channeled implants allows a reduction in the number of epitaxially growth processes that are used to create super junction MOSFETs.

Abstract: An organic light-emitting diode (OLED) display panel and an OLED display device are provided. A length of a second anode of a second display area extended from a second pixel opening is greater than that of a first anode in a first display area extended from a first pixel opening. Light can be reflected to outside of the display panel through a portion of the second anode extended from the second pixel opening, so that brightness of the second display area is similar or consistent with brightness of the first display area.

Abstract: Approaches herein decrease nanosheet gate length variations by implanting a gate layer material with ions prior to etching. A method may include forming a dummy gate structure over a nanosheet stack, the dummy gate structure including a hardmask atop a gate material layer, and removing a portion of the hardmask to expose a first area and a second area of the gate material layer. The method may further include implanting the dummy gate structure to modify the first and second areas of the gate material layer, and etching the first and second areas of the gate material layer to form a treated layer along a sidewall of a third area of the gate material layer, wherein the third area is beneath the hardmask.

Abstract: A scan network configured to transport repair information between memories and a controller for a non-volatile storage device comprises: repair registers coupled in parallel to repair information generation circuitry for one of the memories and segment selection devices that divide the repair registers into repair register segments. Each of the segment selection devices comprises: a storage element configured to store a segment selection bit and segment selection bit generation circuitry configured to generate the segment selection bit based on the repair information. Each of the segment selection devices is configurable to include or not include the corresponding repair register segment in a scan path of the scan network in a shift operation based on the segment selection bit.

Abstract: Image frames for computational photography may be corrected, such as through rolling shutter correction (RSC), prior to fusion of the image frames to reduce wobble and jitter artifacts present in a video sequence of HDR-enhanced image frames. First and second motion data regarding motion of the image capture device may be determined for times corresponding to the capturing of the first and second image frames, respectively. The rolling shutter correction (RSC) may be applied to the first and second image frames based on both the first and second motion data. The corrected first and second image frames may then be aligned and fused to obtain a single output image frame with higher dynamic range than either of the first or second image frames.