Abstract: Provided are a control method and device for a data packet duplication function, and a communication device. The control method for the data packet duplication function includes determining, by a communication device, to deactivate or activate a data packet duplication function; and performing, by the communication device, an operation of deactivating or activating the data packet duplication function correspondingly. Further provided is a storage medium.

Abstract: Disclosed herein are approaches for reducing buried channel recess depth using a non-doping ion implant prior to formation of the buried channel. In one approach, a method may include providing an oxide layer over a substrate, performing a non-doping implantation process through the oxide layer to form an amorphous region in the substrate, and forming a photoresist over the oxide layer. The method may further include forming a buried layer in the substrate by implanting the substrate through an opening in the photoresist, and performing an oxidation and dopant drive-in process to the amorphous region and to the buried layer to form a second oxide layer.

Abstract: A method of fabricating a high electron mobility transistor is disclosed. The method comprises using an ion implantation process to amorphize a portion of the barrier layer to a specific depth. The etch rate of this amorphized portion is much faster than that of the rest of the barrier layer. In this way, the depth of the recessed regions into which the source and drain contacts are disposed is more tightly controlled. Further, the etching process may be a wet or dry etch process. The roughness of the recessed region may also be improved using this approach.

Abstract: Image frames for computational photography may be corrected, such as through rolling shutter correction (RSC), prior to fusion of the image frames to reduce wobble and jitter artifacts present in a video sequence of HDR-enhanced image frames. First and second motion data regarding motion of the image capture device may be determined for times corresponding to the capturing of the first and second image frames, respectively. The rolling shutter correction (RSC) may be applied to the first and second image frames based on both the first and second motion data. The corrected first and second image frames may then be aligned and fused to obtain a single output image frame with higher dynamic range than either of the first or second image frames.

Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for data forwarding for user equipment with data transmission. A non-anchor node may receive user data of a wireless communication device to send uplink. The non-anchor node may decode the user data into an uplink air interface protocol protocol data unit (PDU), using a partial portion of context information of the wireless communication device. The non-anchor node may send the uplink air interface protocol PDU in a user data container of a first message, to an anchor node having full context information of the wireless communication device.

Abstract: Disclosed herein are methods for backside wafer dopant activation using a high-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a high-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.

Abstract: Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, and forming a mask over the device structure including within each of the plurality of trenches and over a top surface of the device structure. The method may further include removing the mask from within the trenches, wherein the mask remains along the top surface of the device structure, and implanting the device structure to form a treated layer along a bottom of the trenches. In some embodiments, the method may further include forming a gate oxide layer along a sidewall of each of the trenches and along the bottom of the trenches, wherein a thickness of the oxide along the bottom of the trenches is greater than a thickness of the oxide along the sidewall of each of the trenches.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for allocating configuration grant resources across multiple base stations. A wireless communication device may obtain, rom a first wireless communication node, a plurality of configured grant (CG) configurations. Each of the plurality of CG configurations may be for data transmission in radio resource control (RRC) inactive state in a respective cell. The wireless communication device in the RRC inactive stat may use a first CG configuration from the plurality of CG configurations, to transmit data according to an identifier of a cell in which the wireless communication device camps.

Abstract: Disclosed herein are methods for increasing MOSFET threshold voltage to enable higher SiC mobility. In some embodiments, a method includes providing a device structure including a dielectric layer over an epitaxial layer, patterning a hardmask layer over the dielectric layer, performing a first ion implant to form a well in the epitaxial layer, and performing a second ion implant to form an interface layer between the well and the dielectric layer.

Abstract: A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.

Abstract: The present invention discloses a display panel and a method for manufacturing the same. The display panel includes a thin film transistor array layer, a light-emitting device layer, and a thermal thin film layer. By means of connecting in series at least one thermistor in a light-emitting loop constituted by a driving transistor and a light-emitting device, the display panel can reduce or eliminate an influence of temperature on an attenuation of luminous brightness, and can meet the industry-recognized life evaluation standards.

Abstract: Provided are a method and apparatus for processing Integrated Access and Backhaul (IAB) node information in an IAB network, including a second IAB node receives notification information transmitted by a first IAB node, where the notification information includes at least one of: notification information for notifying a connection handover event and/or a connection reestablishment event, and instruction information for instructing to perform Packet Data Convergence Protocol (PDCP) status reporting.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for performing beam-switching for user equipment in inactive state using configuration grants. A wireless communication node may send a beam switching configuration for a configured grant to a wireless communication device. The wireless communication node may determine a threshold for beam switching. The wireless communication node may detect, when the wireless communication device is in a radio resource control (RRC) inactive state, that a quality of a beam received via the configured grant is below the threshold.

Abstract: Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured with process steps including multiple proton implant processes where the SiC IGBT device is irradiated with ion to affect proton implantation into the SiC IGBT device at multiple depths in the drift region to reduced minority carrier lifetime.

Abstract: Methods, systems, and computer storage media for providing a dynamically weighted unobserved component model (“DW-UCM”) in a demand forecasting engine of a data analytics system. Dynamic weighting is performed based on a machine learning framework that includes tools, interfaces, and a library for developing improved machine learning models (e.g., dynamic demand forecasting models) of a dynamic weighting machine learning pipeline. In particular, the dynamic weighting machine learning pipeline can include a first module that is configured to predict if a segment (e.g., travel segment) under evaluation is open or closed (e.g., due to a restriction or rule), a second module that forecasts near-term recovery (e.g., approx. 0 - 4 weeks), and a third module that predicts longer term recovery.

Abstract: The present disclosure relates to devices, methods, and computer-readable medium for providing recommendations for alternate resources to use for cloud services. The devices, methods, and computer-readable medium may receive a resource allocation request for a new resource of a computing system and may predict an occurrence of a capacity related allocation for the resource allocation request. The devices, methods, and computer-readable medium may identify alternate resources to use for the resource allocation request and may provide recommendations with the alternate resources.

Abstract: The present invention relates to hemagglutinin-specific antibodies, fragments thereof, and uses thereof. More specifically, these antibodies and fragments thereof are able to recognize antigen from multiple influenza strains.

Abstract: A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

Abstract: A method for dynamic intelligent testing of a target, to be tested according to projects, includes calling up a data distribution model of a project in response to a target being tested by the project, and obtaining a test range corresponding to the project based on the data distribution model. The method further includes obtaining a test value when the target is at a minimum power consumption value by testing the target based on the test range, and updating the data distribution model and the test range of the project based on the test value.