Abstract: A serum-free complete medium for inducing differentiation of a mesenchymal stem cell to a corneal epithelial cell in the field of differentiation induction of stem cells, prepared by the following method: uniformly mixing the serum-free complete medium, containing 5-10 ?mol of resveratrol, 2-4 ?mol of icariin, 1-3 nmol of aspirin, 1-3 nmol of parathyroid hormone, 5-10 nmol of hydrocortisone, 1-3 mg of rapamycin, 2-10 ?g of testosterone, 2-10 ?g of EPO, 2-10 ?g of LIF and the balance of a corneal epithelial cell serum-free medium in per 1 L; and then performing sterilization by filtration.

Abstract: Disclosed herein are approaches for forming a shallow trench isolation (STI) to improve extremely thin silicon on insulator (ETSOI) device performance. In one approach, a method may include providing a device stack comprising a buried oxide (BOX) layer in a substrate, patterning a hardmask over the substrate, and forming a plurality of isolation regions in the device stack, wherein the plurality of isolation regions extend through the box layer and the substrate. The method may further include forming a well mask over the device stack, wherein an opening through the well mask exposes a first isolation region of the plurality of isolation regions, and modifying a stress of a material of the first isolation region by implanting the first isolation region of the plurality of isolation regions.

Abstract: Methods for processing a dielectric film to improve its uniformity of thickness and refractive index are disclosed. The dielectric film is deposited using conventional approaches, such as chemical vapor deposition (CVD) or spin coating. The workpiece, with the applied dielectric film is then processed to improve the uniformity of the thickness. This processing may comprise implanting a thinning species to the thicker portions of the dielectric film to reduce the thickness of these portions. The thinning species may be silicon or another suitable species. This processing may alternatively or additionally include implanting a thickening species to the thinner portions of the dielectric film to increase their thickness. The thickening species may be helium or another suitable species. This approach may reduce the variation in thickness by 50% or more.

Abstract: Approaches herein decrease nanosheet gate length variations by implanting a gate layer material with ions prior to etching. A method may include forming a dummy gate structure over a nanosheet stack, the dummy gate structure including a hardmask atop a gate material layer, and removing a portion of the hardmask to expose a first area and a second area of the gate material layer. The method may further include implanting the dummy gate structure to modify the first and second areas of the gate material layer, and etching the first and second areas of the gate material layer to form a treated layer along a sidewall of a third area of the gate material layer, wherein the third area is beneath the hardmask.

Abstract: Provided here are methods and manufacturing systems to implant protons into SiC IGBT devices at multiple depths in the drift layer of the SiC IGBT device. Provides are SiC IGBT devices manufactured with process steps including multiple proton implant processes where the SiC IGBT device is irradiated with ion to affect proton implantation into the SiC IGBT device at multiple depths in the drift region to reduced minority carrier lifetime.

Abstract: The present invention concerns a method for assessing a quality of a beam shaping device (11) manufactured according to a planned device design (11d) for shaping a beam (100.i) of accelerated particles emitted by a particle accelerator system, the method comprising, (a) establishing with a treatment planning system (TPS) the planned device design (11d) of the beam shaping device, (b) manufacturing the beam shaping device according to the planned device design, (c) establishing a CT-scan of the beam shaping device to yield an actual CT-image (11a), (d) determining dimensions and local materials densities from the actual CT-image, (e) determining a calculated dose distribution in the treatment volume (V) obtained by virtually irradiating the treatment volume with the beam through a virtual beam shaping device having a geometry and a density defined by the device actual CT-image, (f) comparing the calculated dose distribution (cDD) with a reference dose distribution (rDD).

Abstract: The present disclosure discloses a reinforced rubber dome, including a support portion, an elastic connection portion, and a pressing portion connected in sequence, the support portion being provided with an exhaust groove penetrating inside and outside, and the pressing portion having a columnar triggering portion at an axially inner side thereof. An outer side wall of the elastic connection portion is further provided with elastic reinforcing bars, an inner wall of the elastic reinforcing bar is fitted on the outer side wall of the elastic connection portion, two ends of the elastic reinforcing bar are respectively connected to the support portion and the pressing portion. The reinforced rubber dome provided by the disclosure increases the strength of a pressing and bending area by arranging the elastic reinforcing bars of any number, any shape and any size on the outer side wall of the elastic connection portion.

Abstract: The present invention belongs to the technical field of NMN preparation, and particularly relates to a recrystallization method for NMN preparation, comprising the following steps: step 1. preparation of raw materials: preparing nicotinamide, nucleic acid, ribose-5-phosphate and phosphoric acid; step 2. preparation of reaction solution: preparing a suitable buffer, dissolving nicotinamide, ribose, ribose-5-phosphate in the buffer, and adjusting the concentration of the solution; step 3. activated phosphorylation reaction: adding phosphoric acid to the buffer of the dissolved nicotinamide and ribose, and stirring the mixture at appropriate temperature and pH conditions to make reactions take place in the mixture; step 4. addition of enzyme for catalysis; step 5. separation and purification: separating and purifying the reacted mixture to remove unreacted substrates and synthetase.

Abstract: Disclosed herein are approaches for reducing buried channel recess depth using a non-doping ion implant prior to formation of the buried channel. In one approach, a method may include providing an oxide layer over a substrate, performing a non-doping implantation process through the oxide layer to form an amorphous region in the substrate, and forming a photoresist over the oxide layer. The method may further include forming a buried layer in the substrate by implanting the substrate through an opening in the photoresist, and performing an oxidation and dopant drive-in process to the amorphous region and to the buried layer to form a second oxide layer.

Abstract: A display panel and a display module are provided. The display panel has a plurality of first light-emitting devices displaying a first color, a plurality of second light-emitting devices displaying a second color, and a plurality of third light-emitting devices displaying a third color, wherein the display panel has a plurality of light-emitting repeating units, and at least one first sub-pixel of each of the plurality of light-emitting repeating units comprises at least two of the first light-emitting devices, the second light-emitting devices, or the third light-emitting devices, all of which are arranged in a stack.

Abstract: Provided are a control method and device for a data packet duplication function, and a communication device. The control method for the data packet duplication function includes determining, by a communication device, to deactivate or activate a data packet duplication function; and performing, by the communication device, an operation of deactivating or activating the data packet duplication function correspondingly. Further provided is a storage medium.

Abstract: The present disclosure relates to devices, methods, and computer-readable medium for providing recommendations for alternate resources to use for cloud services. The devices, methods, and computer-readable medium may receive a resource allocation request for a new resource of a computing system and may predict an occurrence of a capacity related allocation for the resource allocation request. The devices, methods, and computer-readable medium may identify alternate resources to use for the resource allocation request and may provide recommendations with the alternate resources.

Abstract: The present disclosure provides a method and an apparatus for random access. The method includes: a communication node obtaining random access information, wherein the random access information comprises a subframe sequence number of a preamble transmission and a radio frame sequence number of the preamble transmission, or the random access information comprises a time domain position index and a frequency domain position index for sending the preamble; and the communication node determining the random access radio network temporary identity (RA-RNTI) according to the random access information.

Abstract: Methods for fabricating SiC MOSFETs using channeled ion implants are disclosed. By aligning the workpiece such that the ions pass through channels in the SiC hexagonal crystalline structure, it is possible to achieve deeper implants than are otherwise possible. Further, it was found that these channeled implants can be tailored to achieve box-like dopant concentrations. This allows channeled ion implants to be used to create the current spreading layer of the MOSFET, which is conventional fabricated using epitaxial growth. Further, these channeled implants can also be used to create the shields between adjacent transistors. Additionally, the use of channeled implants allows a reduction in the number of epitaxially growth processes that are used to create super junction MOSFETs.

Abstract: The present invention discloses a reconstruction method and system of fluorescence molecular tomography based on wavelet and Schur decomposition, the method including the steps of: transforming the inverse problem of fluorescence molecular tomography into a linear matrix equation; solving the linear matrix equation and updating reconstruction parameters iteratively using the obtained solution to obtain a final reconstruction result; in which, in the process of solution of the linear matrix equation, wavelet transform is performed on the linear matrix equation to obtain an overview matrix equation, Schur decomposition is performed on the overview matrix equation to obtain a subsystem with a reduced number of conditions, and the linear matrix equation is calculated using the solution of the subsystem. The present invention reduces the amount of calculation in the process of reconstruction, speedups the process of reconstruction, improves the imaging efficiency and further improves the imaging quality.

Abstract: The disclosure provides methods and compositions for treating non-small cell lung cancer (NSCLC; e.g., squamous or non-squamous NSCLC, including stage IV NSCLC) in a subject, for example, by administering a treatment regimen that includes a PD-1 axis binding antagonist (e.g., atezolizumab) in combination with a platinum-based chemotherapy (e.g., cisplatin or carboplatin and gemcitabine) to the subject. Exemplary subjects that may be treated using the compositions and methods of the disclosure include those that exhibits a heightened blood tumor mutational burden (bTMB) score relative to a reference bTMB score. Also provided are compositions (e.g., a PD-1 axis binding antagonist (e.g., atezolizumab) and/or a platinum-based chemotherapy (e.g., cisplatin or carboplatin and gemcitabine), pharmaceutical compositions thereof, kits thereof, and articles of manufacture thereof) for use in treating NSCLC (e.g.

Abstract: An electromagnetically heated cooking utensil, and a heating control circuit and method therefor. The heating control circuit includes a first resonance device; a second resonance device; a first power switch; a second power switch; a first synchronization device that detects voltages of both ends of the first resonance device to output a first synchronization signal; a second synchronization device that detects voltages of both ends of the second resonance device to output a second synchronization signal; and a control device that selects, according to the heating mode of the electromagnetically heated cooking utensil, the first synchronization signal to generate a driving signal for driving the first power switch, a second synchronization signal to generate a driving signal for driving the second power switch.

Abstract: A P-type field effect transistor (PFET) device and a method for fabricating a PFET device using fully depleted silicon on insulator (FDSOI) technology is disclosed. The method includes introducing germanium into the channel layer using ion implantation. This germanium implant increases the axial stress in the channel layer, improving device performance. This implant may be performed at low temperatures to minimize damage to the crystalline structure. Further, rather than using a long duration, high temperature anneal process, the germanium implanted in the channel layer may be annealed using a laser anneal or a rapid temperature anneal. The implanted regions are re-crystallized using the channel layer that is beneath the gate as the seed layer. In some embodiments, an additional oxide spacer is used to further separate the raised source and drain regions from the gate.

Abstract: Provided are a control method and device for a data packet duplication function, and a communication device. The control method for the data packet duplication function includes determining, by a communication device, to deactivate or activate a data packet duplication function; and performing, by the communication device, an operation of deactivating or activating the data packet duplication function correspondingly. Further provided is a storage medium.