Abstract: The present disclosure provides a method and an apparatus for random access. The method includes: a communication node obtaining random access information, wherein the random access information comprises a subframe sequence number of a preamble transmission and a radio frame sequence number of the preamble transmission, or the random access information comprises a time domain position index and a frequency domain position index for sending the preamble; and the communication node determining the random access radio network temporary identity (RA-RNTI) according to the random access information.

Abstract: Methods for fabricating SiC MOSFETs using channeled ion implants are disclosed. By aligning the workpiece such that the ions pass through channels in the SiC hexagonal crystalline structure, it is possible to achieve deeper implants than are otherwise possible. Further, it was found that these channeled implants can be tailored to achieve box-like dopant concentrations. This allows channeled ion implants to be used to create the current spreading layer of the MOSFET, which is conventional fabricated using epitaxial growth. Further, these channeled implants can also be used to create the shields between adjacent transistors. Additionally, the use of channeled implants allows a reduction in the number of epitaxially growth processes that are used to create super junction MOSFETs.

Abstract: The present invention discloses a reconstruction method and system of fluorescence molecular tomography based on wavelet and Schur decomposition, the method including the steps of: transforming the inverse problem of fluorescence molecular tomography into a linear matrix equation; solving the linear matrix equation and updating reconstruction parameters iteratively using the obtained solution to obtain a final reconstruction result; in which, in the process of solution of the linear matrix equation, wavelet transform is performed on the linear matrix equation to obtain an overview matrix equation, Schur decomposition is performed on the overview matrix equation to obtain a subsystem with a reduced number of conditions, and the linear matrix equation is calculated using the solution of the subsystem. The present invention reduces the amount of calculation in the process of reconstruction, speedups the process of reconstruction, improves the imaging efficiency and further improves the imaging quality.

Abstract: The disclosure provides methods and compositions for treating non-small cell lung cancer (NSCLC; e.g., squamous or non-squamous NSCLC, including stage IV NSCLC) in a subject, for example, by administering a treatment regimen that includes a PD-1 axis binding antagonist (e.g., atezolizumab) in combination with a platinum-based chemotherapy (e.g., cisplatin or carboplatin and gemcitabine) to the subject. Exemplary subjects that may be treated using the compositions and methods of the disclosure include those that exhibits a heightened blood tumor mutational burden (bTMB) score relative to a reference bTMB score. Also provided are compositions (e.g., a PD-1 axis binding antagonist (e.g., atezolizumab) and/or a platinum-based chemotherapy (e.g., cisplatin or carboplatin and gemcitabine), pharmaceutical compositions thereof, kits thereof, and articles of manufacture thereof) for use in treating NSCLC (e.g.

Abstract: An electromagnetically heated cooking utensil, and a heating control circuit and method therefor. The heating control circuit includes a first resonance device; a second resonance device; a first power switch; a second power switch; a first synchronization device that detects voltages of both ends of the first resonance device to output a first synchronization signal; a second synchronization device that detects voltages of both ends of the second resonance device to output a second synchronization signal; and a control device that selects, according to the heating mode of the electromagnetically heated cooking utensil, the first synchronization signal to generate a driving signal for driving the first power switch, a second synchronization signal to generate a driving signal for driving the second power switch.

Abstract: Provided are a control method and device for a data packet duplication function, and a communication device. The control method for the data packet duplication function includes determining, by a communication device, to deactivate or activate a data packet duplication function; and performing, by the communication device, an operation of deactivating or activating the data packet duplication function correspondingly. Further provided is a storage medium.

Abstract: A P-type field effect transistor (PFET) device and a method for fabricating a PFET device using fully depleted silicon on insulator (FDSOI) technology is disclosed. The method includes introducing germanium into the channel layer using ion implantation. This germanium implant increases the axial stress in the channel layer, improving device performance. This implant may be performed at low temperatures to minimize damage to the crystalline structure. Further, rather than using a long duration, high temperature anneal process, the germanium implanted in the channel layer may be annealed using a laser anneal or a rapid temperature anneal. The implanted regions are re-crystallized using the channel layer that is beneath the gate as the seed layer. In some embodiments, an additional oxide spacer is used to further separate the raised source and drain regions from the gate.

Abstract: A method may include providing a device structure in the semiconductor device. The device structure may include a buried device contact, a first dielectric layer, disposed over the buried device contact; and a device element, where the device element includes a TiN layer. The method may include implanting an ion species into the TiN layer, wherein the ion species comprises a seed material for selective tungsten deposition.

Abstract: Disclosed herein are approaches for reducing buried channel recess depth using a non-doping ion implant prior to formation of the buried channel. In one approach, a method may include providing an oxide layer over a substrate, performing a non-doping implantation process through the oxide layer to form an amorphous region in the substrate, and forming a photoresist over the oxide layer. The method may further include forming a buried layer in the substrate by implanting the substrate through an opening in the photoresist, and performing an oxidation and dopant drive-in process to the amorphous region and to the buried layer to form a second oxide layer.

Abstract: A method of fabricating a high electron mobility transistor is disclosed. The method comprises using an ion implantation process to amorphize a portion of the barrier layer to a specific depth. The etch rate of this amorphized portion is much faster than that of the rest of the barrier layer. In this way, the depth of the recessed regions into which the source and drain contacts are disposed is more tightly controlled. Further, the etching process may be a wet or dry etch process. The roughness of the recessed region may also be improved using this approach.

Abstract: Image frames for computational photography may be corrected, such as through rolling shutter correction (RSC), prior to fusion of the image frames to reduce wobble and jitter artifacts present in a video sequence of HDR-enhanced image frames. First and second motion data regarding motion of the image capture device may be determined for times corresponding to the capturing of the first and second image frames, respectively. The rolling shutter correction (RSC) may be applied to the first and second image frames based on both the first and second motion data. The corrected first and second image frames may then be aligned and fused to obtain a single output image frame with higher dynamic range than either of the first or second image frames.

Abstract: A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for data forwarding for user equipment with data transmission. A non-anchor node may receive user data of a wireless communication device to send uplink. The non-anchor node may decode the user data into an uplink air interface protocol protocol data unit (PDU), using a partial portion of context information of the wireless communication device. The non-anchor node may send the uplink air interface protocol PDU in a user data container of a first message, to an anchor node having full context information of the wireless communication device.

Abstract: Disclosed herein are methods for backside wafer dopant activation using a high-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a high-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.

Abstract: Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, and forming a mask over the device structure including within each of the plurality of trenches and over a top surface of the device structure. The method may further include removing the mask from within the trenches, wherein the mask remains along the top surface of the device structure, and implanting the device structure to form a treated layer along a bottom of the trenches. In some embodiments, the method may further include forming a gate oxide layer along a sidewall of each of the trenches and along the bottom of the trenches, wherein a thickness of the oxide along the bottom of the trenches is greater than a thickness of the oxide along the sidewall of each of the trenches.

Abstract: Presented are systems, methods, apparatuses, or computer-readable media for allocating configuration grant resources across multiple base stations. A wireless communication device may obtain, rom a first wireless communication node, a plurality of configured grant (CG) configurations. Each of the plurality of CG configurations may be for data transmission in radio resource control (RRC) inactive state in a respective cell. The wireless communication device in the RRC inactive stat may use a first CG configuration from the plurality of CG configurations, to transmit data according to an identifier of a cell in which the wireless communication device camps.

Abstract: Disclosed herein are methods for increasing MOSFET threshold voltage to enable higher SiC mobility. In some embodiments, a method includes providing a device structure including a dielectric layer over an epitaxial layer, patterning a hardmask layer over the dielectric layer, performing a first ion implant to form a well in the epitaxial layer, and performing a second ion implant to form an interface layer between the well and the dielectric layer.

Abstract: A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.

Abstract: The present invention discloses a display panel and a method for manufacturing the same. The display panel includes a thin film transistor array layer, a light-emitting device layer, and a thermal thin film layer. By means of connecting in series at least one thermistor in a light-emitting loop constituted by a driving transistor and a light-emitting device, the display panel can reduce or eliminate an influence of temperature on an attenuation of luminous brightness, and can meet the industry-recognized life evaluation standards.

Abstract: Provided are a method and apparatus for processing Integrated Access and Backhaul (IAB) node information in an IAB network, including a second IAB node receives notification information transmitted by a first IAB node, where the notification information includes at least one of: notification information for notifying a connection handover event and/or a connection reestablishment event, and instruction information for instructing to perform Packet Data Convergence Protocol (PDCP) status reporting.