Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: Tag-guided image positioning method includes: defining a three-dimensional space coordinate system based on tag spatial position information obtained by identifying reference image(s) of a patient's body part disposed with reference tag(s), and position/direction data related to a medical device reference point (MDC)/direction (MDD); estimating a target coordinate in system representing a position of a target point based on three-dimensional medical image of patient's body part marked with target point and reference marker(s) corresponding to position(s) of reference tag(s) and reference coordinate(s) in system representing position(s) of reference tag(s); and outputting a positioning result as a basis for whether patient's body part should be adjusted based on a judgment result indicating whether or not in system a distance between target coordinate and a device coordinate representing a position of MDC and a pointing representing MDD are respectively consistent with a predetermined distance/medical device i

Abstract: Disclosed is a neutron capture therapy apparatus. The neutron capture therapy apparatus is used for irradiating a neutron beam with a preset neutron dose to an object to be irradiated. The neutron beam enters the object and undergoes a nuclear reaction with boron in the object. The neutron capture therapy apparatus includes a correction system for correcting the preset neutron dose.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: A semiconductor device includes an image sensor structure and a periphery device structure. The image sensor structure includes a first semiconductor substrate, a first interconnect structure, a radiation device, a transfer gate transistor electrically coupled to the radiation device, a floating diffusion region electrically coupled to the transfer gate, and a first capacitor disposed in the first interconnect structure. The transfer gate transistor electrically interconnects and disconnects the radiation device and the floating diffusion region. The periphery device structure includes a second interconnect structure disposed on the first interconnect structure, a second semiconductor substrate disposed on the second interconnect structure, a plurality of logic devices disposed in the second semiconductor substrate, and a second capacitor disposed in the second interconnect structure. The first capacitor and the second capacitor are electrically coupled to the floating diffusion region.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

Abstract: A planar transformer and a power supply device with the planar transformer are provided. The planar transformer includes a primary winding assembly, a secondary winding assembly and a magnetic core assembly. The primary winding assembly includes at least one primary winding unit. Each of the at least one primary winding unit includes a printed circuit board and a first conductive sheet. The first conductive sheet is embedded within the printed circuit board. The secondary winding assembly includes at least one secondary winding unit. The magnetic core assembly includes at least one magnetic core. In addition, at least a portion of the at least one primary winding unit and at least a portion of the at least one secondary winding unit are enclosed by the magnetic core assembly.

Abstract: A pixel sensor may include a main deep trench isolation (DTI) structure and one or more sub-DTI structures in a substrate of the pixel sensor to increase the quantum efficiency of the pixel sensor at large incident angles. The one or more sub-DTI structures may be located within the perimeter of the main DTI structure and above a photodiode. The one or more sub-DTI structures may be configured to provide a path of travel for incident light into the photodiode from large incident angles in that the one or more sub-DTI structures may be filled with an oxide material to increase light penetration into the one or more sub-DTI structures. This may reduce reflections at a top surface of the substrate, thereby permitting incident light to refract into the substrate and toward the photodiode.

Abstract: A neutron capture therapy system, including a vacuum tube for transmitting a charged particle beam, a neutron generating part for generating a neutron beam, and a beam shaping assembly for shaping the neutron beam. The beam shaping assembly is provided with an accommodating part. The neutron generating part is disposed at an end of the vacuum tube. The vacuum tube has a first position and a second position. The neutron capture therapy system further includes a removal device, which includes a moving part that drives the vacuum tube to move. The moving part has a third position and a fourth position. When the moving part is in the third position, the vacuum tube is in the first position. When the moving part is in the fourth position, the vacuum tube is in the second position, and the neutron generating part is located at the outer side of the beam shaping assembly.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

Abstract: A grid structure in a pixel array may be at least partially angled or tapered toward a top surface of the grid structure such that the width of the grid structure approaches a near-zero width near the top surface of the grid structure. This permits the spacing between color filter regions in between the grid structure to approach a near-zero spacing near the top surfaces of the color filter regions. The tight spacing of color filter regions provided by the angled or tapered grid structure provides a greater surface area and volume for incident light collection in the color filter regions. Moreover, the width of the grid structure may increase at least partially toward a bottom surface of the grid structure such that the wider dimension of the grid structure near the bottom surface of the grid structure provides optical crosstalk protection for the pixel sensors in the pixel array.

Abstract: The present invention provides a control method of a flash memory controller. By dividing a plurality of logical address to physical address mapping tables into multiple groups, establishing a group-to-physical address mapping table, a storage unit relationship table and a latest updated storage unit table to manage the flash memory controller, the times of loading the group-to-physical address mapping table into a buffer memory can be reduced, so as to improve the efficiency of the flash memory controller.

Abstract: A semiconductor image-sensing structure includes a semiconductor substrate having a front side and a back side, a photo-sensing element disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a metal reflector disposed over the front side of the semiconductor substrate. The metal reflector surrounds a gate structure of the transistor from a plan view on the front side of the semiconductor substrate.

Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodiode. Each pixel further includes a color filter over the photodiode. Each pixel further includes a first transparent conductive layer over the color filter. Each pixel further includes an electro-optical (EO) film over the first transparent conductive layer. Each pixel further includes a second transparent conductive layer over the EO film. Each pixel further includes a pillar of transparent conductive material electrically connecting the first transparent conductive layer and the second transparent conductive layer.

Abstract: A semiconductor image sensing structure includes a semiconductor substrate having a front side and a back side, a pixel sensor disposed in the semiconductor substrate, a transistor disposed over the front side of the semiconductor substrate, and a reflective structure disposed over the front side of the semiconductor substrate. A gate structure of the transistor and the reflective structure include a same material. A top surface of the gate structure of the transistor and a top surface of the reflective structure are aligned with each other.

Abstract: Provided is an operation procedure of a positioning device of a radiation therapy system. The radiation therapy system includes a radiation generation device used to generate therapeutic radiation, an irradiation chamber used to accommodate an irradiation subject receiving the radiation, a management chamber used to achieve irradiation control, and a support device used to transport and support the irradiation subject. The support device includes a support member supporting the irradiation subject, an adjustment assembly for adjusting a spatial position of the support member, and a joining assembly fixedly connecting the support member and the adjustment assembly together in a detachable manner. The support member at least includes a first support member and a second support member having a different size and/or shape from the first support member. The invention allows switching between support members having different sizes and/or shapes according to an actual use requirement.

Abstract: A neutron capture therapy system includes a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly, the concrete wall and a reinforcing portion at least partially disposed in the concrete wall are provided to support the beam shaping assembly, and more than 90% of weight of a material of the reinforcing portion is composed of at least one element of C, H, O, N, Si, Al, Mg, Li, B, Mn, Cu, Zn, S, Ca, and Ti. In the neutron capture therapy system, the reinforcing portion disposed in the concrete wall has good anti-activation performance. Therefore, compared with a conventional reinforced concrete structure, the radiation is further attenuated.

Abstract: Tag-guided image positioning method includes: defining a three-dimensional space coordinate system based on tag spatial position information obtained by identifying reference image(s) of a patient's body part disposed with reference tag(s), and position/direction data related to a medical device reference point (MDC)/direction (MDD); estimating a target coordinate in system representing a position of a target point based on three-dimensional medical image of patient's body part marked with target point and reference marker(s) corresponding to position(s) of reference tag(s) and reference coordinate(s) in system representing position(s) of reference tag(s); and outputting a positioning result as a basis for whether patient's body part should be adjusted based on a judgment result indicating whether or not in system a distance between target coordinate and a device coordinate representing a position of MDC and a pointing representing MDD are respectively consistent with a predetermined distance/medical device i

Abstract: A neutron capture therapy system is provided, which may prevent a material of a beam shaping assembly from deformation and damaged, and improve the flux and quality of neutron sources. A boron neutron capture therapy system (100) includes a neutron generating device (10) and a beam shaping assembly (20). The neutron generating device (10) includes an accelerator (11) and a target (T). A charged particle beam (P) generated by acceleration of the accelerator (11) acts with the target (T) to generate neutrons. The neutrons form a neutron beam (N). The neutron beam (N) defines a main axis (X). The beam shaping assembly (20) includes a support part (21) and a main part (23) filled within the support part (21).