Abstract: An IC package comprises a substrate; a semiconductor die with a top surface, wherein the semiconductor die is stacked over the substrate; a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion, the proximal portion covers the top surface of the semiconductor die; and an encapsulating case encapsulating the substrate, the semiconductor die and the vapor chamber, wherein the proximal portion of the vapor chamber is within the encapsulating case, and the distal portion of the vapor chamber extends from a wall of the encapsulating case.

Abstract: An image sensor device includes a semiconductor substrate having a front-side surface and a backside surface opposite to the front-side surface, a logic device disposed over the front-side surface of the semiconductor substrate, a photo-sensing element disposed in the semiconductor substrate, an interconnect structure disposed over the front-side surface of the semiconductor substrate, and an EO modulator disposed over the backside surface of the semiconductor substrate. The EO modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens disposed between the first electrode and the second electrode. The logic device is disposed between the interconnect structure and the photo-sensing element in a direction perpendicular to the front-side surface of the semiconductor substrate.

Abstract: A medical security management system and method, including: a clinical control terminal, further including a clinical security control module; a neutron beam control terminal, connected to the clinical control terminal, controlling the operation of the accelerator terminal, wherein the neutron beam control terminal further includes an accelerator security control module. The system further including a consensus mechanism module, storing at least one consensus mechanism. When the clinical control terminal transmits a neutron beam generation request to the neutron beam control terminal, the accelerator security control module and the clinical security control module respectively generate and transmit a first key and a second key to the consensus mechanism module, thereby the consensus mechanism module drive the accelerator terminal to generate a neutron beam if the first key and the second key meet the requirement of the consensus mechanism.

Abstract: The present invention provides a medical imaging analysis system and method, improving the accuracy of boron quantitative analysis between the boundary of the human body and the air through the fusion of anatomical images and functional images. The system includes a contour module, an image fusion module, and a distribution analysis module. The contour module receives an anatomical image and a functional image. The contour module further includes a contour identification unit and a contour definition unit. The contour identification unit identifies geometric contours in the anatomical image. The contour definition unit defines distribution contours based on the signal intensity of boron in the functional image. The image fusion module registers the anatomical image and functional image. The image fusion module outputs the result of the intersection area of the geometric and distribution contours.

Abstract: Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.

Abstract: Tag-guided image positioning method includes: defining a three-dimensional space coordinate system based on tag spatial position information obtained by identifying reference image(s) of a patient’s body part disposed with reference tag(s), and position/direction data related to a medical device reference point(MDC)/direction(MDD); estimating a target coordinate in system representing a position of a target point based on three-dimensional medical image of patient’s body part marked with target point and reference marker(s) corresponding to position(s) of reference tag(s) and reference coordinate(s) in system representing position(s) of reference tag(s); and outputting a positioning result as a basis for whether patient’s body part should be adjusted based on a judgment result indicating whether or not in system a distance between target coordinate and a device coordinate representing a position of MDC and a pointing representing MDD are respectively consistent with a predetermined distance/medical device inc

Abstract: A semiconductor image-sensing structure includes a semiconductor substrate having a front side and a back side, a photo-sensing element disposed in the semiconductor substrate, a color filter disposed over the back side of the semiconductor substrate, and an electro-optical modulator disposed between the color filter and the photo-sensing element. The electro-optical modulator includes a first electrode, a second electrode over the first electrode, and a micro-lens between the first electrode and the second electrode.

Abstract: An IC package comprises a substrate; a semiconductor die with a top surface, wherein the semiconductor die is stacked over the substrate; a vapor chamber stacked over the semiconductor die, wherein the vapor chamber comprises a proximal portion and a distal portion, the proximal portion covers the top surface of the semiconductor die; and an encapsulating case encapsulating the substrate, the semiconductor die and the vapor chamber, wherein the proximal portion of the vapor chamber is within the encapsulating case, and the distal portion of the vapor chamber extends from a wall of the encapsulating case.

Abstract: A semiconductor device includes an image sensor structure and a periphery device structure. The image sensor structure includes a first semiconductor substrate, a first interconnect structure, a radiation device, a transfer gate transistor electrically coupled to the radiation device, a floating diffusion region electrically coupled to the transfer gate, and a first capacitor disposed in the first interconnect structure. The transfer gate transistor electrically interconnects and disconnects the radiation device and the floating diffusion region. The periphery device structure includes a second interconnect structure disposed on the first interconnect structure, a second semiconductor substrate disposed on the second interconnect structure, a plurality of logic devices disposed in the second semiconductor substrate, and a second capacitor disposed in the second interconnect structure. The first capacitor and the second capacitor are electrically coupled to the floating diffusion region.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: Tag-guided image positioning method includes: defining a three-dimensional space coordinate system based on tag spatial position information obtained by identifying reference image(s) of a patient's body part disposed with reference tag(s), and position/direction data related to a medical device reference point (MDC)/direction (MDD); estimating a target coordinate in system representing a position of a target point based on three-dimensional medical image of patient's body part marked with target point and reference marker(s) corresponding to position(s) of reference tag(s) and reference coordinate(s) in system representing position(s) of reference tag(s); and outputting a positioning result as a basis for whether patient's body part should be adjusted based on a judgment result indicating whether or not in system a distance between target coordinate and a device coordinate representing a position of MDC and a pointing representing MDD are respectively consistent with a predetermined distance/medical device i

Abstract: Disclosed is a neutron capture therapy apparatus. The neutron capture therapy apparatus is used for irradiating a neutron beam with a preset neutron dose to an object to be irradiated. The neutron beam enters the object and undergoes a nuclear reaction with boron in the object. The neutron capture therapy apparatus includes a correction system for correcting the preset neutron dose.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: A semiconductor device includes an image sensor structure and a periphery device structure. The image sensor structure includes a first semiconductor substrate, a first interconnect structure, a radiation device, a transfer gate transistor electrically coupled to the radiation device, a floating diffusion region electrically coupled to the transfer gate, and a first capacitor disposed in the first interconnect structure. The transfer gate transistor electrically interconnects and disconnects the radiation device and the floating diffusion region. The periphery device structure includes a second interconnect structure disposed on the first interconnect structure, a second semiconductor substrate disposed on the second interconnect structure, a plurality of logic devices disposed in the second semiconductor substrate, and a second capacitor disposed in the second interconnect structure. The first capacitor and the second capacitor are electrically coupled to the floating diffusion region.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

Abstract: A planar transformer and a power supply device with the planar transformer are provided. The planar transformer includes a primary winding assembly, a secondary winding assembly and a magnetic core assembly. The primary winding assembly includes at least one primary winding unit. Each of the at least one primary winding unit includes a printed circuit board and a first conductive sheet. The first conductive sheet is embedded within the printed circuit board. The secondary winding assembly includes at least one secondary winding unit. The magnetic core assembly includes at least one magnetic core. In addition, at least a portion of the at least one primary winding unit and at least a portion of the at least one secondary winding unit are enclosed by the magnetic core assembly.

Abstract: A pixel sensor may include a main deep trench isolation (DTI) structure and one or more sub-DTI structures in a substrate of the pixel sensor to increase the quantum efficiency of the pixel sensor at large incident angles. The one or more sub-DTI structures may be located within the perimeter of the main DTI structure and above a photodiode. The one or more sub-DTI structures may be configured to provide a path of travel for incident light into the photodiode from large incident angles in that the one or more sub-DTI structures may be filled with an oxide material to increase light penetration into the one or more sub-DTI structures. This may reduce reflections at a top surface of the substrate, thereby permitting incident light to refract into the substrate and toward the photodiode.

Abstract: A neutron capture therapy system, including a vacuum tube for transmitting a charged particle beam, a neutron generating part for generating a neutron beam, and a beam shaping assembly for shaping the neutron beam. The beam shaping assembly is provided with an accommodating part. The neutron generating part is disposed at an end of the vacuum tube. The vacuum tube has a first position and a second position. The neutron capture therapy system further includes a removal device, which includes a moving part that drives the vacuum tube to move. The moving part has a third position and a fourth position. When the moving part is in the third position, the vacuum tube is in the first position. When the moving part is in the fourth position, the vacuum tube is in the second position, and the neutron generating part is located at the outer side of the beam shaping assembly.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.