Patents by Inventor Wen-An Yeh
Wen-An Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11449104Abstract: A flexible display that can be adjusted by an electromagnetic mechanism to remove a deformation is disclosed. The flexible display is attached to a body that is configurable in a folded configuration or an unfolded configuration by a hinge mechanism. When unfolded the flexible display includes a deformation (i.e., warp) in an area around the hinge mechanism. Accordingly, an electromagnet is included with the hinge mechanism to remove the deformation by attracting a magnetic element is disposed on a back surface of the flexible display.Type: GrantFiled: November 5, 2019Date of Patent: September 20, 2022Assignee: Google LLCInventors: Wenli Tan, Victor Cheng, Vincent Chien, Davis Ou, Eugene Liao, Han-Wen Yeh, Mike Liu, Chun Tseng
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Patent number: 11437745Abstract: A card connector includes a transmission conductor assembly. The transmission conductor assembly includes a first conductor group and a second conductor group. The first conductor group includes a backup transmission conductor, first and second signal transmission conductors, an inspection signal transmission conductor, first to seventh grounding transmission conductors, a command reset transmission conductor, first to sixth differential transmission conductors, first and second power transmission conductors, and a write-protection transmission conductor, each of which has two ends respectively forming a spring section and a soldering section. The second conductor group includes eighth to tenth grounding transmission conductors, seventh to tenth differential transmission conductors, and a third power transmission conductor each of which has two ends respectively forming a spring section and a soldering section.Type: GrantFiled: June 16, 2021Date of Patent: September 6, 2022Assignee: V-GENERAL TECHNOLOGY CO., LTD.Inventors: Po-Wen Yeh, Hsuan Ho Chung, Yung-Chang Lin, Yu Hung Lin, Tzu-Wei Yeh, Yu-Lun Yeh
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Publication number: 20220190716Abstract: A transmitter is provided. the transmitter includes a hybrid feedback circuit and a hybrid driving circuit. The hybrid feedback circuit compares a reference voltage with a feedback voltage in closed-loop, determines whether to perform polarity reversal according to a mode control signal, controls power output according to a comparison result and the mode control signal, and generates a first output signal. The hybrid driving circuit, coupled to the hybrid feedback circuit, receives the first output signal of the hybrid feedback circuit, generates a transmitter output signal according to an input data, and generates a second output signal according to the transmitter output signal. The first output signal and the second output signal are transmitted back to the hybrid feedback circuit.Type: ApplicationFiled: December 6, 2021Publication date: June 16, 2022Inventors: Chun-Wen YEH, Ching-Lung TI, Chia-Chieh TU
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Publication number: 20220157605Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: ApplicationFiled: January 31, 2022Publication date: May 19, 2022Inventors: Shih-Chun HUANG, Chiu-Hsiang CHEN, Ya-Wen YEH, Yu-Tien SHEN, Po-Chin CHANG, Chien-Wen LAI, Wei-Liang LIN, Ya Hui CHANG, Yung-Sung YEN, Li-Te LIN, Pinyen LIN, Ru-Gun LIU, Chin-Hsiang LIN
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Patent number: 11289332Abstract: A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.Type: GrantFiled: July 15, 2019Date of Patent: March 29, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Chun Huang, Chin-Hsiang Lin, Chien-Wen Lai, Ru-Gun Liu, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Yu-Tien Shen, Ya-Wen Yeh
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Publication number: 20220069211Abstract: A pillar-shaped structure and a line-shaped structure are described that include a supporting top conductive layer, an active material layer, such as a memory material or switching material, and a bottom conductive layer. The active material layer is more narrow than the supporting top conductive layer. A supporting side insulating layer is formed connecting the top and bottom conductive layers to provide structure stability. A void, or air gap, is formed between the active material layer and the supporting side insulating layer, which can provide improved thermal isolation between adjacent pillar-shaped or line-shaped structures.Type: ApplicationFiled: September 3, 2020Publication date: March 3, 2022Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Hsiang-Lan LUNG, Chiao-Wen YEH
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Patent number: 11239078Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.Type: GrantFiled: July 6, 2020Date of Patent: February 1, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Chun Huang, Chiu-Hsiang Chen, Ya-Wen Yeh, Yu-Tien Shen, Po-Chin Chang, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Li-Te Lin, Pinyen Lin, Ru-Gun Liu, Chin-Hsiang Lin
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Publication number: 20210408705Abstract: A card connector includes a transmission conductor assembly. The transmission conductor assembly includes a first conductor group and a second conductor group. The first conductor group includes a backup transmission conductor, first and second signal transmission conductors, an inspection signal transmission conductor, first to seventh grounding transmission conductors, a command reset transmission conductor, first to sixth differential transmission conductors, first and second power transmission conductors, and a write-protection transmission conductor, each of which has two ends respectively forming a spring section and a soldering section. The second conductor group includes eighth to tenth grounding transmission conductors, seventh to tenth differential transmission conductors, and a third power transmission conductor each of which has two ends respectively forming a spring section and a soldering section.Type: ApplicationFiled: June 16, 2021Publication date: December 30, 2021Inventors: PO-WEN YEH, HSUAN HO CHUNG, YUNG-CHANG LIN, YU HUNG LIN, TZU-WEI YEH, YU-LUN YEH
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Publication number: 20210399481Abstract: A card connector includes a transmission conductor assembly that includes a backup transmission conductor, a first signal transmission conductor, an inspection signal transmission conductor, a first grounding transmission conductor, a command reset transmission conductor, a first differential transmission conductor, a second differential transmission conductor, a second grounding transmission conductor, a third grounding transmission conductor, a fourth grounding transmission conductor, a first power transmission conductor, a second power transmission conductor, a third differential transmission conductor, a fourth differential transmission conductor, a second signal transmission conductor, a fifth grounding transmission conductor, a sixth grounding transmission conductor, a seventh grounding transmission conductor, a fifth differential transmission conductor, a sixth differential transmission conductor, and a write-protection transmission conductor, each of which has two ends respectively forming a spring seType: ApplicationFiled: June 16, 2021Publication date: December 23, 2021Inventors: PO-WEN YEH, HSUAN HO CHUNG, YUNG-CHANG LIN, YU HUNG LIN, TZU-WEI YEH, YU-LUN YEH
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Publication number: 20210399482Abstract: A card connector includes a transmission conductor assembly. The transmission conductor assembly includes a first signal transmission conductor, a first power transmission conductor, an inspection signal transmission conductor, a second signal transmission conductor, a command reset transmission conductor, a first grounding transmission conductor, a second power transmission conductor, a first differential transmission conductor, a second differential transmission conductor, a third signal transmission conductor, a second grounding transmission conductor, a third grounding transmission conductor, a third differential transmission conductor, a fourth differential transmission conductor, a fourth grounding transmission conductor, a fifth grounding transmission conductor, a fifth differential transmission conductor, a sixth differential transmission conductor, and an outside grounding transmission conductor, each of which has a spring section and a soldering section.Type: ApplicationFiled: June 16, 2021Publication date: December 23, 2021Inventors: PO-WEN YEH, HSUAN HO CHUNG, YUNG-CHANG LIN, YU HUNG LIN, TZU-WEI YEH, YU-LUN YEH
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Publication number: 20210375639Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.Type: ApplicationFiled: August 16, 2021Publication date: December 2, 2021Inventors: Ya-Wen YEH, Yu-Tien SHEN, Shih-Chun HUANG, Po-Chin CHANG, Wei-Liang LIN, Yung-Sung YEN, Wei-Hao WU, Li-Te LIN, Pinyen LIN, Ru-Gun LIU
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Publication number: 20210358752Abstract: A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.Type: ApplicationFiled: July 26, 2021Publication date: November 18, 2021Inventors: Shih-Chun Huang, Ya-Wen Yeh, Chien-Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Ru-Gun Liu, Chin-Hsiang Lin, Yu-Tien Shen
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Publication number: 20210272807Abstract: A directional patterning method includes following steps. A substrate is provided with a mask layer thereon, and the mask layer has at least one opening pattern therein. A cyclic deposition and etching process is performed to increase a length of the at least one opening pattern.Type: ApplicationFiled: May 17, 2021Publication date: September 2, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Chin Chang, Li-Te Lin, Ru-Gun Liu, Wei-Liang Lin, Pinyen Lin, Yu-Tien Shen, Ya-Wen Yeh
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Patent number: 11094556Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.Type: GrantFiled: April 12, 2019Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ya-Wen Yeh, Yu-Tien Shen, Shih-Chun Huang, Po-Chin Chang, Wei-Liang Lin, Yung-Sung Yen, Wei-Hao Wu, Li-Te Lin, Pinyen Lin, Ru-Gun Liu
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Publication number: 20210240907Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.Type: ApplicationFiled: April 21, 2021Publication date: August 5, 2021Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien-Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang
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Patent number: 11075079Abstract: A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.Type: GrantFiled: August 21, 2018Date of Patent: July 27, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shih-Chun Huang, Ya-Wen Yeh, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Ru-Gun Liu, Chin-Hsiang Lin, Yu-Tien Shen
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Publication number: 20210204438Abstract: A server includes a first server unit, a second server unit, a hinge and a connecting element. The second server unit is disposed on the first server unit and is electrically connected to the first server unit. The second server unit is pivoted to the first server unit through the hinge. The connecting element is disposed between the first server unit and the second server unit. The connecting element has a first connection end and a second connection end, wherein the first connection end is connected to the first server unit, and the second connection end is connected to the second server unit. A server system including a rack and at least one server is also provided.Type: ApplicationFiled: October 27, 2020Publication date: July 1, 2021Applicants: LITE-ON ELECTRONICS (GUANGZHOU) LIMITED, Lite-On Technology CorporationInventors: Wei-Ming Shieh, Yi-Feng Pu, Chien-Wen Yeh, Hung-Hsing Chiu, Pei-Hsuan Huang
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Patent number: 11043381Abstract: A directional patterning method includes following steps. A substrate is provided with a mask layer thereon, and the mask layer has at least one opening pattern therein. A cyclic deposition and etching process is performed to increase a length of the at least one opening pattern.Type: GrantFiled: January 27, 2019Date of Patent: June 22, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Po-Chin Chang, Li-Te Lin, Ru-Gun Liu, Wei-Liang Lin, Pinyen Lin, Yu-Tien Shen, Ya-Wen Yeh
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Publication number: 20210165457Abstract: A flexible display that can be adjusted by an electromagnetic mechanism to remove a deformation is disclosed. The flexible display is attached to a body that is configurable in a folded configuration or an unfolded configuration by a hinge mechanism. When unfolded the flexible display includes a deformation (i.e., warp) in an area around the hinge mechanism. Accordingly, an electromagnet is included with the hinge mechanism to remove the deformation by attracting a magnetic element is disposed on a back surface of the flexible display.Type: ApplicationFiled: November 5, 2019Publication date: June 3, 2021Inventors: Wenli Tan, Victor Cheng, Vincent Chien, Davis Ou, Eugene Liao, Han-Wen Yeh, Mike Liu, Chun Tseng
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Patent number: 10990744Abstract: Various integrated circuit (IC) design methods are disclosed herein. An exemplary method includes receiving an IC design layout having an IC feature to be formed on a wafer using a lithography process and inserting a spacing in the IC feature, thereby generating a modified IC design layout that divides the IC feature into a first main feature and a second main feature separated by the spacing. The spacing has a sub-resolution dimension, such that the IC feature does not include the spacing when formed on the wafer by the lithography process using the modified IC design layout. A mask can be fabricated based on the modified IC design layout, wherein the mask includes the first main feature and the second main feature separated by the spacing. A lithography process can be performed using the mask to form the IC feature (without the spacing) on a wafer.Type: GrantFiled: January 11, 2018Date of Patent: April 27, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chin-Min Huang, Bo-Han Chen, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Chia-Cheng Chang, Lun-Wen Yeh, Shun-Shing Yang