Patents by Inventor Wen-Cheng Chen

Wen-Cheng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140099197
    Abstract: An exemplary centrifugal fan includes a housing and an impeller received in the housing. The housing defines an air inlet and an air outlet thereof. Airflow driven by the impeller flows out of the housing via the air outlet. The housing further defines an opening adjacent to one end of the air outlet. The ambient air out of the centrifugal fan enters the housing via the opening, and flows out of the housing via the air outlet.
    Type: Application
    Filed: November 1, 2012
    Publication date: April 10, 2014
    Inventors: WEN-CHENG CHEN, CHIH-JEN LIU
  • Patent number: 8648401
    Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.
    Type: Grant
    Filed: September 17, 2010
    Date of Patent: February 11, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Huang Lai, Sheng-Huang Huang, Kuo-Feng Huang, Ming-Te Liu, Chun-Jung Lin, Ya-Chen Kao, Wen-Cheng Chen
  • Publication number: 20140030075
    Abstract: An exemplary housing of a cooling fan includes a metallic base plate and a plastic bear seat. Clasps extend upwardly from the base plate. The bear seat is formed on the base plate via injection process. A bottom end of the bear seat directly contacts the base plate. The clasps are embedded in the bear seat.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 30, 2014
    Applicant: Foxconn Technology Co., Ltd.
    Inventor: Wen-Cheng CHEN
  • Publication number: 20130309094
    Abstract: A cooling fan includes a hub and an impeller. The hub includes a circular wall and an annular wall. The annular wall has a position end opposite to the circular wall. The impeller includes a blade ring and a plurality of blades integrally extending outwards from an outer circumferential surface of the blade ring. The blade ring receives the hub and has a first mounting end and a second mounting end opposite to the first mounting end. When the position end abuts the second mounting end of the blade ring, the blades extend aslant from the blade ring toward a counterclockwise direction relative to the circular wall. When the position end abuts the first mounting end of the blade ring, the blades extend aslant from the blade ring toward a clockwise direction relative to the circular wall.
    Type: Application
    Filed: June 26, 2012
    Publication date: November 21, 2013
    Applicant: FOXCONN TECHNOLOGY CO., LTD.
    Inventors: YU-CHING LIN, MING-HSIU CHUNG, WEN-CHENG CHEN
  • Publication number: 20130259692
    Abstract: An exemplary fan includes a hub and an impeller. The hub is made of metal, and includes a flange. The impeller is made of plastic. The impeller is formed around the hub and has the flange embedded therein. A method for manufacturing the fan is also provided.
    Type: Application
    Filed: December 17, 2012
    Publication date: October 3, 2013
    Applicant: FOXCONN TECHNOLOGY CO., LTD.
    Inventor: WEN-CHENG CHEN
  • Publication number: 20130251292
    Abstract: A bearing device includes a body, a circular cover, and a through hole commonly defined through both the body and the cover. The body is an injection molded piece made from metal powder and molten binder. The cover is an injection molded piece made from metal powder and molten binder. Two passages are defined between the body and the cover, and each passage communicates the through hole with an exterior of the bearing device, whereby lubricant can flow from the through hole to the passages. A bearing assembly having the bearing device is also provided, and a method of manufacturing the bearing device is further provided.
    Type: Application
    Filed: December 19, 2012
    Publication date: September 26, 2013
    Applicant: Foxconn Technology Co., Ltd.
    Inventors: WEN-CHENG CHEN, MING-HSIU CHUNG
  • Patent number: 8482914
    Abstract: An electronic device with multi-phase mechanism including a host, a storage device and a carriage is provided in the present invention. The storage device is slidably disposed in the host and adapted to be pulled out from the host. The carriage is slidably disposed in the storage device and adapted to be pulled out from the storage device. Through the storage device slidably disposing in the host and being adapted to be pulled out from the host, it facilitates the user to take or replace a content from the storage device. When the carriage is moved out from the storage device in a first phase and then the storage device is pulled out from the host in a second phase, the content in the storage device is taken out.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: July 9, 2013
    Assignee: Compal Electronics, Inc.
    Inventor: Wen-Cheng Chen
  • Publication number: 20130139188
    Abstract: An electronic device with multi-phase mechanism including a host, a storage device and a carriage is provided in the present invention. The storage device is slidably disposed in the host and adapted to be pulled out from the host. The carriage is slidably disposed in the storage device and adapted to be pulled out from the storage device. Through the storage device slidably disposing in the host and being adapted to be pulled out from the host, it facilitates the user to take or replace a content from the storage device. When the carriage is moved out from the storage device in a first phase and then the storage device is pulled out from the host in a second phase, the content in the storage device is taken out.
    Type: Application
    Filed: November 28, 2011
    Publication date: May 30, 2013
    Applicant: COMPAL ELECTRONICS, INC.
    Inventor: Wen-Cheng Chen
  • Patent number: 8450722
    Abstract: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MTJ.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: May 28, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Te Liu, Tien-Wei Chiang, Ya-Chen Kao, Wen-Cheng Chen
  • Patent number: 8416600
    Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: April 9, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Jung Lin, Yu-Jen Wang, Ya-Chen Kao, Wen-Cheng Chen, Ming-Te Liu
  • Publication number: 20130015538
    Abstract: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MIJ.
    Type: Application
    Filed: July 15, 2011
    Publication date: January 17, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Te LIU, Tien-Wei CHIANG, Ya-Chen KAO, Wen-Cheng CHEN
  • Publication number: 20130003281
    Abstract: An electronic device including at least one connecting member, a display unit and a host is provided in the present invention. The connecting member has a first fixing section, a second fixing section and a third fixing section. The display unit includes a front bezel and a panel, and the panel is fixed to the connecting member through the first fixing section. The host is fixed to the connecting member through the second fixing section or the third fixing section depending on the size of the display unit. The connecting member and the panel are disposed between the front bezel and the host. The assembling of the host and the display unit is flexible by using the connecting member.
    Type: Application
    Filed: July 1, 2011
    Publication date: January 3, 2013
    Applicant: COMPAL ELECTRONICS, INC.
    Inventor: Wen-Cheng Chen
  • Patent number: 8329464
    Abstract: The present disclosure uses different kinds of surface treatment processes on titanium-made dental implants. The growth and attachment conditions of bone cells (MC3T3-E), fibroblasts (NIH 3T3) and epidermal cells (XB-2) on the metal surface of titanium slices with different surface treatments are observed. Tetra-calcium phosphate is used to perform secondary sand-blasting process to clean up the metal surface and provide calcium ions for osteoblastoma physiology. Thus, by adjusting the cells adhesive and proliferative abilities, the success rate of the clinical applications in dental implant is improved.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: December 11, 2012
    Assignee: Kaohsiung Medical University
    Inventors: Wen-Cheng Chen, Chun-Cheng Hung, Chia-Ling Ko
  • Publication number: 20120068279
    Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 22, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Huang Lai, Sheng-Huang Huang, Kuo-Feng Huang, Ming-Te Liu, Chun-Jung Lin, Ya-Chen Kao, Wen-Cheng Chen
  • Patent number: D690649
    Type: Grant
    Filed: November 1, 2011
    Date of Patent: October 1, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Chien-Yao Liao, Wen-Cheng Chen
  • Patent number: D690650
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: October 1, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Chien-Yao Liao, Wen-Cheng Chen
  • Patent number: D690651
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: October 1, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Chien-Yao Liao, Wen-Cheng Chen
  • Patent number: D691087
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: October 8, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Chien-Yao Liao, Wen-Cheng Chen
  • Patent number: D691556
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: October 15, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Chien-Yao Liao, Wen-Cheng Chen
  • Patent number: D694874
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: December 3, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Ming-Hsiu Chung, Wen-Cheng Chen