Abstract: A calcium phosphate cement suitable for use in dental and bone prosthesis is disclosed, which include calcium phosphate particles having a diameter of 0.05 to 100 microns, wherein said calcium phosphate particles on their surfaces have whiskers or fine crystals having a width ranging from 1 to 100 nm and a length ranging from 1 to 1000 nm.

Abstract: A calcium phosphate cement suitable for use in dental and bone prosthesis is disclosed, which include calcium phosphate particles having a diameter of 0.05 to 100 microns, wherein said calcium phosphate particles on their surfaces have whiskers or fine crystals having a width ranging from 1 to 100 nm and a length ranging from 1 to 1000 nm.

Abstract: A tetracalcium phosphate (TTCP) particle for use in preparing a fast-setting, bioresorbable calcium phosphate cement is disclosed. The TTCP particle has a basic calcium phosphate whiskers or fine crystals on a surface thereof; the basic calcium phosphate whiskers or fine crystals having a Ca/P molar ratio greater than 1.33, and having a length up to about 5000 nm and a width up to about 500 nm.

Abstract: A tetracalcium phosphate (TTCP) particle for use in preparing a fast-setting, bioresorbable calcium phosphate cement is disclosed. The TTCP particle has a basic calcium phosphate whiskers or fine crystals on a surface thereof; the basic calcium phosphate whiskers or fine crystals having a Ca/P molar ratio greater than 1.33, and having a length up to about 5000 nm and a width up to about 500 nm.

Abstract: A shaving head assembly for a lint shaver includes a transmission shaft rotatably received inside the casing and having a V-shaped cutout defined in a distal end of the transmission shaft. The blade assembly has a blade seat with a V-shaped extension extending from a bottom of the blade seat to be securely received in the V-shaped cutout yet movable relative to the transmission shaft so that the blade seat is able to move upward and downward relative to the transmission shaft. A rotor is fixedly connected to a free end of the transmission shaft and rotatably received in the casing.

Abstract: A shaving head assembly for a lint shaver includes a transmission shaft rotatably received inside the casing and having a V shaped cutout defined in a distal end of the transmission shaft. The blade assembly has a blade seat with a V shaped extension extending from a bottom of the blade seat to be securely received in the V shaped cutout yet movable relative to the transmission shaft so that the blade seat is able to move upward and downward relative to the transmission shaft. A rotor is fixedly connected to a free end of the transmission shaft and rotatably received in the casing.

Abstract: A method for increasing working time/setting time of monolithic tetracalcium phosphate (TTCP) cement paste formed by mixing a TTCP powder with an aqueous solution, which includes heating the TTCP powder, prior to the mixing, so that the TTCP powder is maintained at a temperature of 50-350° C. for a period of time which is greater than one minute, and that a TTCP cement paste formed by mixing the resulting heated TTCP powder with the aqueous solution has a prolonged working time in comparison with that formed by mixing TTCP powder that has not been subjected to such heating with the aqueous solution.

Abstract: A memory cell comprising a capacitor having a dielectric layer interposing first and second vertically disposed electrodes, an insulating lining located over the capacitor, and a transistor gate extension passing over the capacitor. A spacer isolates an end of one of the capacitor electrodes from the transistor gate extension. In one embodiment, the spacer includes a first non-planar profile configured to engage a second non-planar profile comprising ends of the one of the capacitor electrodes and the insulating lining.

Abstract: A tetracalcium phosphate (TTCP) particle for use in preparing a fast-setting, bioresorbable calcium phosphate cement is disclosed. The TTCP particle has a basic calcium phosphate whiskers on a surface thereof; the basic calcium phosphate whiskers having a Ca/P molar ratio greater than 1.33, and having a length up to about 5000 nm and a width up to about 500 nm. The basic calcium phosphate whiskers are substantially free of a hydroxyapatite phase and mainly composed of TTCP phase.

Abstract: A calcium phosphate cement suitable for use in dental and bone prosthesis is disclosed, which include calcium phosphate particles having a diameter of 0.05 to 100 microns, wherein said calcium phosphate particles on their surfaces have whiskers or fine crystals having a width ranging from 1 to 100 nm and a length ranging from 1 to 1000 nm.

Abstract: A tetracalcium phosphate (TTCP) particle for use in preparing a fast-setting, bioresorbable calcium phosphate cement is disclosed. The TTCP particle has a basic calcium phosphate whiskers or fine crystals on a surface thereof; the basic calcium phosphate whiskers or fine crystals having a Ca/P molar ratio greater than 1.33, and having a length up to about 5000 nm and a width up to about 500 nm.

Abstract: A new method is provided for the creation of a 1T RAM cell. Standard processing is applied to create STI trenches in the surface of a substrate, N2 implantations are performed into the sidewalls of the STI trenches. A layer of lining oxide is created, the implanted N2 interacts with the lining oxide to form SiON over exposed surfaces of the STI trenches. STI oxide is deposited and polished, filling the STI trenches there-with. Crown patterning is performed to define capacitor areas, the crown patterning stops on a layer of etch stop material and the created SION and partially removes STI oxide from the STI trenches. Layers of etch stop material, exposed SiON and pad oxide are removed, exposing the surface of the silicon substrate, the etched layers of STI oxide are not affected by this removal. A layer of SAC oxide is grown, n-well and p-well implantations are performed into the surface of the substrate.

Abstract: A method of shortening a working and setting time of a CPC paste without using additives or sacrificing its strength, which includes heating CPC powder so that the CPC powder is maintained at a temperature of 50-400° C. for a period of time which is greater than one minute.

Abstract: A process for forming a composite insulator spacer on the sides of a buried stack capacitor structure, wherein the buried stack capacitor structure is located overlying a portion of an insulator filled, shallow trench isolation (STI) region, has been developed. A thin silicon nitride spacer is first formed on the sides of the completed buried stack capacitor structure, followed by deposition of a silicon oxide layer. An anisotropic dry etch procedure is next employed removing a top portion of the silicon oxide layer, and resulting in a partially defined silicon oxide spacer. A critical wet etch procedure is next used to remove the bottom portion of the silicon oxide layer, defining the final silicon oxide spacer of the composite insulator spacer, now comprised of a silicon oxide spacer on an underlying silicon nitride spacer.

Abstract: A process for fabricating a buried stack capacitor structure, to be used in a one transistor, RAM cell, has been developed. The process features formation of a self-aligned, ring shaped storage node opening, formed in a top portion of an silicon oxide filled, shallow trench shape, via a selective dry etch procedure. The selective dry etch procedure in combination with subsequent selective wet etch procedures, create bare portions of semiconductor substrate at the junction of the ring shaped storage node opening and the adjacent top surface of semiconductor, allowing a heavily doped region to be created in this region. The presence of the heavily doped region reduces the node to substrate resistance encountered when a storage node structure is formed in the ring shaped storage node structure, as well as on the overlying the heavily doped region.

Abstract: A process for producing a fast-setting, bioresorbable calcium phosphate cement. The process of the invention includes a pre-heat treatment step to generate uniformly distributed submicron-sized apatite seed crystals.

Abstract: A method for fabricating a dog-bone in a DRAM device, comprising the following steps. A semiconductor structure having an upper silicon layer with STIs formed therein is provided. The semiconductor structure has a LOGIC region and a DRAM region with a stitch region therebetween. A polysilicon layer is formed over the semiconductor structure. A dopant is selectively implanted in the polysilicon region within the DRAM region, and the portion of the stitch region within the DRAM region, to form a doped poly segment, and an undoped poly segment within the LOGIC region, and the portion of the stitch region within the LOGIC region. A hard mask is formed over the doped poly segment and the undoped poly segment and patterned to form at least one patterned first hard mask portion only over the word line doped poly segment within the DRAM region.