Patents by Inventor Wen-Cheng Chen

Wen-Cheng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130251292
    Abstract: A bearing device includes a body, a circular cover, and a through hole commonly defined through both the body and the cover. The body is an injection molded piece made from metal powder and molten binder. The cover is an injection molded piece made from metal powder and molten binder. Two passages are defined between the body and the cover, and each passage communicates the through hole with an exterior of the bearing device, whereby lubricant can flow from the through hole to the passages. A bearing assembly having the bearing device is also provided, and a method of manufacturing the bearing device is further provided.
    Type: Application
    Filed: December 19, 2012
    Publication date: September 26, 2013
    Applicant: Foxconn Technology Co., Ltd.
    Inventors: WEN-CHENG CHEN, MING-HSIU CHUNG
  • Patent number: 8482914
    Abstract: An electronic device with multi-phase mechanism including a host, a storage device and a carriage is provided in the present invention. The storage device is slidably disposed in the host and adapted to be pulled out from the host. The carriage is slidably disposed in the storage device and adapted to be pulled out from the storage device. Through the storage device slidably disposing in the host and being adapted to be pulled out from the host, it facilitates the user to take or replace a content from the storage device. When the carriage is moved out from the storage device in a first phase and then the storage device is pulled out from the host in a second phase, the content in the storage device is taken out.
    Type: Grant
    Filed: November 28, 2011
    Date of Patent: July 9, 2013
    Assignee: Compal Electronics, Inc.
    Inventor: Wen-Cheng Chen
  • Publication number: 20130139188
    Abstract: An electronic device with multi-phase mechanism including a host, a storage device and a carriage is provided in the present invention. The storage device is slidably disposed in the host and adapted to be pulled out from the host. The carriage is slidably disposed in the storage device and adapted to be pulled out from the storage device. Through the storage device slidably disposing in the host and being adapted to be pulled out from the host, it facilitates the user to take or replace a content from the storage device. When the carriage is moved out from the storage device in a first phase and then the storage device is pulled out from the host in a second phase, the content in the storage device is taken out.
    Type: Application
    Filed: November 28, 2011
    Publication date: May 30, 2013
    Applicant: COMPAL ELECTRONICS, INC.
    Inventor: Wen-Cheng Chen
  • Patent number: 8450722
    Abstract: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MTJ.
    Type: Grant
    Filed: July 15, 2011
    Date of Patent: May 28, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Te Liu, Tien-Wei Chiang, Ya-Chen Kao, Wen-Cheng Chen
  • Patent number: 8416600
    Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: April 9, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Jung Lin, Yu-Jen Wang, Ya-Chen Kao, Wen-Cheng Chen, Ming-Te Liu
  • Publication number: 20130015538
    Abstract: A magnetoresistive random access memory (MRAM) cell includes a magnetic tunnel junction (MTJ), a top electrode disposed over the MTJ, a bottom electrode disposed below the MTJ, and an induction line disposed to one side of the MTJ. The induction line is configured to induce a perpendicular magnetic field at the MIJ.
    Type: Application
    Filed: July 15, 2011
    Publication date: January 17, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Te LIU, Tien-Wei CHIANG, Ya-Chen KAO, Wen-Cheng CHEN
  • Publication number: 20130003281
    Abstract: An electronic device including at least one connecting member, a display unit and a host is provided in the present invention. The connecting member has a first fixing section, a second fixing section and a third fixing section. The display unit includes a front bezel and a panel, and the panel is fixed to the connecting member through the first fixing section. The host is fixed to the connecting member through the second fixing section or the third fixing section depending on the size of the display unit. The connecting member and the panel are disposed between the front bezel and the host. The assembling of the host and the display unit is flexible by using the connecting member.
    Type: Application
    Filed: July 1, 2011
    Publication date: January 3, 2013
    Applicant: COMPAL ELECTRONICS, INC.
    Inventor: Wen-Cheng Chen
  • Patent number: 8329464
    Abstract: The present disclosure uses different kinds of surface treatment processes on titanium-made dental implants. The growth and attachment conditions of bone cells (MC3T3-E), fibroblasts (NIH 3T3) and epidermal cells (XB-2) on the metal surface of titanium slices with different surface treatments are observed. Tetra-calcium phosphate is used to perform secondary sand-blasting process to clean up the metal surface and provide calcium ions for osteoblastoma physiology. Thus, by adjusting the cells adhesive and proliferative abilities, the success rate of the clinical applications in dental implant is improved.
    Type: Grant
    Filed: September 1, 2010
    Date of Patent: December 11, 2012
    Assignee: Kaohsiung Medical University
    Inventors: Wen-Cheng Chen, Chun-Cheng Hung, Chia-Ling Ko
  • Publication number: 20120068279
    Abstract: A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side.
    Type: Application
    Filed: September 17, 2010
    Publication date: March 22, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Huang Lai, Sheng-Huang Huang, Kuo-Feng Huang, Ming-Te Liu, Chun-Jung Lin, Ya-Chen Kao, Wen-Cheng Chen
  • Publication number: 20110318835
    Abstract: The present disclosure uses different kinds of surface treatment processes on titanium-made dental implants. The growth and attachment conditions of bone cells (MC3T3-E), fibroblasts(NIH 3T3) and epidermal cells (XB-2) on the metal surface of titanium slices with different surface treatments are observed. Tetra-calcium phosphate is used to perform secondary sand-blasting process to clean up the metal surface and provide calcium ions for osteoblastoma physiology. Thus, by adjusting the cells adhesive and proliferative abilities, the success rate of the clinical applications in dental implant is improved.
    Type: Application
    Filed: September 1, 2010
    Publication date: December 29, 2011
    Applicant: KAOHSIUNG MEDICAL UNIVERSITY
    Inventors: Wen-Cheng Chen, Chun-Cheng Hung, Chia-Ling Ko
  • Patent number: 7976874
    Abstract: A calcium phosphate cement suitable for use in dental and bone prosthesis is disclosed, which include calcium phosphate particles having a diameter of 0.05 to 100 microns, wherein said calcium phosphate particles on their surfaces have whiskers or fine crystals having a width ranging from 1 to 100 nm and a length ranging from 1 to 1000 nm.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: July 12, 2011
    Inventors: Jiin-Huey Chern Lin, Chien-Ping Ju, Wen-Cheng Chen
  • Publication number: 20110122674
    Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).
    Type: Application
    Filed: November 25, 2009
    Publication date: May 26, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: CHUN-JUNG LIN, Yu-Jen Wang, Ya-Chen Kao, Wen-Cheng Chen, Ming-Te Liu
  • Publication number: 20100313791
    Abstract: The invention provides a calcium phosphate bone cement, a precursor and a fabrication method thereof. The fabrication method comprises: (a) dissolving a calcium phosphate with a low Ca/P atomic ratio in an acid solution, wherein the Ca/P atomic ratio is less than 1.33; (b) adding a calcium phosphate compound into the acid solution to obtain a reaction solution; (c) allowing the reaction solution to stand to grow nanocrystallites on surfaces of the calcium phosphate with low Ca/P atomic ratio; (d) filtering and drying the solution of step (c) to obtain a calcium phosphate powder with low Ca/P atomic ratio having nanocrystallites on the surface; and (e) mixing the powder of step (d) and a calcium phosphate powder with a high Ca/P atomic ratio.
    Type: Application
    Filed: October 6, 2009
    Publication date: December 16, 2010
    Applicant: KAOHSIUNG MEDICAL UNIVERSITY
    Inventors: Wen-Cheng CHEN, Chun-Cheng HUNG, Chia-Ling KO
  • Publication number: 20080156620
    Abstract: The present invention is a continuous feeder which, through a power source, can continuously drive a fixing clip to move back and forth equidistantly and also a mobile clip at the top of the fixing clip, so that when the fixing clip arrives the return point, the material can be downwardly clipped or upwardly released for achieving a continuous feeding. The present invention not only can precisely adjust the moving distance of material in processing for continuously and accurately driving the material to the operation tool, but also can change the driving method for the material to be pull or push in response to the hardness degree of the material.
    Type: Application
    Filed: January 3, 2007
    Publication date: July 3, 2008
    Inventor: Wen-Cheng Chen
  • Publication number: 20080156841
    Abstract: The present invention is a pneumatic continuous feeder which, through an air-pressure motive power source, can continuously drive a fixing clip to move back and forth equidistantly and also a mobile clip at the top of the fixing clip, so that when the fixing clip arrives the return point, the material can be downwardly clipped or upwardly released for achieving a continuous feeding. The present invention not only can precisely adjust the moving distance of material in processing for continuously and accurately driving the material to the operation tool, but also can change the driving method for the material to be pull or push in response to the hardness degree of the material.
    Type: Application
    Filed: January 3, 2007
    Publication date: July 3, 2008
    Inventor: Wen-Cheng Chen
  • Publication number: 20070274834
    Abstract: A manufacturing method of a rotor includes the following steps. A substrate is processed to form a first patterned area, a second patterned area and a third patterned area. The second patterned area is formed around the first patterned area, and the third patterned area is connected to the second patterned area. The first patterned area is processed to form a case. The third patterned area is bent towards the case along a joint line between the second patterned area and the third patterned area to form the blades. The rotor includes a case, a connecting portion and the blades. The case is cylindrical and has a sidewall. The connecting portion is extended from one end of the sidewall of the case. The blades are extended from the connecting portion.
    Type: Application
    Filed: May 8, 2007
    Publication date: November 29, 2007
    Inventors: Wen-Shi Huang, Lee-Long Chen, Chun-Hua Yang, Wen-Cheng Chen
  • Patent number: 7279038
    Abstract: A fast-setting, bioresorbable calcium phosphate cement is prepared by a process which can be carried out with a heat treatment up to 1000° C. on a mixture of a wetting solution and a calcium phosphate powder having a Ca to P molar ratio of 0.5-2.5. The wetting solution suitable for use in the process of the present invention includes water, an organic solvent, an acidic and basic solution. A setting solution for mixing with the heated powder to form the fast-setting, bioresorbable calcium phosphate cement may be water, an acidic or basic solution according to the process of the present invention.
    Type: Grant
    Filed: May 25, 2005
    Date of Patent: October 9, 2007
    Assignee: Calcitec, Inc.
    Inventors: Jiin-Huey Chern Lin, Chien-Ping Ju, Wen-Cheng Chen
  • Patent number: 7270705
    Abstract: A method for increasing working time/setting time of monolithic tetracalcium phosphate (TTCP) cement paste formed by mixing a TTCP powder with an aqueous solution, which includes heating the TTCP powder, prior to the mixing, so that the TTCP powder is maintained at a temperature of 50-350° C. for a period of time which is greater than one minute, and that a TTCP cement paste formed by mixing the resulting heated TTCP powder with the aqueous solution has a prolonged working time in comparison with that formed by mixing TTCP powder that has not been subjected to such heating with the aqueous solution.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: September 18, 2007
    Inventors: Jiin-Huey Chern Lin, Chien-Ping Ju, Wen-Cheng Chen, Kuan-Liang Lin, I-Chang Wang
  • Patent number: 7258734
    Abstract: A calcium phosphate cement suitable for use in dental and bone prosthesis is disclosed, which include calcium phosphate particles having a diameter of 0.05 to 100 microns, wherein said calcium phosphate particles on their surfaces have whiskers or fine crystals having a width ranging from 1 to 100 nm and a length ranging from 1 to 1000 nm.
    Type: Grant
    Filed: May 13, 2005
    Date of Patent: August 21, 2007
    Assignee: Calcitec, Inc.
    Inventors: Jiin-Huey Chern Lin, Chien-Ping Ju, Wen-Cheng Chen
  • Patent number: D690650
    Type: Grant
    Filed: November 2, 2011
    Date of Patent: October 1, 2013
    Assignee: Foxconn Technology Co., Ltd.
    Inventors: Yu-Ching Lin, Chien-Yao Liao, Wen-Cheng Chen