Abstract: A wavelength conversion member includes a substrate, a phosphor layer, and a non-ventilated blade. The substrate is configured to rotate based on an axis. The phosphor layer is disposed on the substrate. The non-ventilated blade has a roughness between 5 ?m and 1.25 mm, or a specific surface area of the non-ventilated blade exceeds a geometric area of the non-ventilated blade by more than 10%.

Abstract: A matte film for hot pressing and a manufacturing method thereof are provided. The manufacturing method includes steps of forming at least one polyester composition into an unstretched polyester thick film and stretching the unstretched polyester thick film in a machine direction (MD) and a transverse direction (TD). The polyester composition includes 81% to 97.9497% by weight of a polyester resin, 0.02% to 2% by weight of an antioxidative ingredient, 0.0003% to 1% by weight of a nucleating agent, 0.01% to 2% by weight of a flow aid, 0.01% to 2% by weight of a polyester modifier, 0.01% to 2% by weight of an inorganic filler, and 2% to 10% by weight of silica particles. The polyester resin has an intrinsic viscosity between 0.60 dl/g and 0.80 dl/g.

Abstract: In example implementations, a computing device is provided. The computing device includes an expansion interface, a first device, a second device, and a processor communicatively coupled to the expansion interface. The expansion interface includes a plurality of slots. Two slots of the plurality of slots are controlled by a single reset signal. The first device is connected to a first slot of the two slots and has a feature that is compatible with the single reset signal. The second device is connected to a second slot of the two slots and does not have the feature compatible with the single reset signal. The process is to detect the first device connected to the first slot and the second device connected to the second slot and disable the feature by preventing the first slot and the second slot from receiving the single reset signal.

Abstract: A portable electronic device, including a first body and a second body, is provided. The second body includes a support structure and a display panel. The support structure is pivotally connected to the first body and is connected to the display panel. The support structure has a first bendable portion. An included angle between the first bendable portion and an edge of the support structure is 45 degrees. The support structure is adapted to be bent along the first bendable portion, so that the second body switches between a first mode and a second mode relative to the first body.

Abstract: A respiratory status classifying method is for classifying as one of at least two respiratory statuses and includes an original physiological parameter inputting step, an original chest image inputting step, a characteristic physiological parameter generating step, a characteristic chest image generating step, a training step and a classifier generating step. The characteristic chest image generating step includes processing at least a part of the original chest images, segmenting images of a left lung, a right lung and a heart from each of the original chest images that are processed, and enhancing image data of the images being segmented, so as to generate a plurality of characteristic chest images. The training step includes training two respiratory status classifiers using a plurality of characteristic physiological parameters and the characteristic chest images by at least one machine learning algorithm.

Abstract: In an embodiment, a system includes: a base; and a rod set comprising multiple rods connected to the base, wherein each rod of the rod set comprises multiple fingers disposed in a vertically-stacked relationship to each other and separated respectively from each other by respective slots, wherein each slot is configured to receive a bevel of a wafer, and wherein each of the multiple fingers comprises a rounded end at a furthest extension.

Abstract: An electronic device including an active region and a peripheral region, and includes a substrate including a first edge and a second edge; a first electrode layer disposed on the substrate; a first conductive glue disposed on the substrate and in the peripheral region; a second conductive glue disposed on the substrate and in the peripheral region; an insulating glue overlapped with the first conductive glue and the second conductive glue; and a first metal element fixed on the first electrode layer through the first conductive glue and the insulating glue; wherein in a top view, the insulating glue is disposed in the peripheral region and extends along an extension direction parallel to the first edge, and along the extension direction, a first distance between the first conductive glue and the second edge is greater than a second distance between the second conductive glue and the second edge.

Abstract: A 3D format image detection method and an electronic apparatus using the same are provided. The 3D format image detection method includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3D image format. A 3D matching processing is performed on the first image and the second image to generate a disparity map of the first image and the second image. The matching number of a plurality of first pixels in the first image matched with a plurality of second pixels in the second image is calculated according to the disparity map. Whether the input image is a 3D format image conforming to the 3D image format is determined according to the matching number.

Abstract: Provided is a nanoparticle or a pharmaceutical composition including the same for treating or remitting a neovascularization or an angiogenesis in eye segments, and the nanoparticle includes a hyaluronic acid and a therapeutic peptide.

Abstract: Various techniques pertaining to non-coherent noise reduction for audio enhancement on a multi-microphone mobile device are proposed. A processor receives a plurality of signals from a plurality of audio sensors corresponding to a plurality of channels responsive to sensing by the plurality of audio sensors. The processor then performs a non-coherent noise reduction on one or more signals of the plurality of signals to suppress one or more non-coherent noises in each of the one or more signals based on a respective signal-to-noise ratio (SNR) associated with each of the one or more signals. The processor further combines the plurality of signals subsequent the noise reduction to generate an output signal.

Abstract: An optical device includes a substrate, a first electrode, a second electrode, and a first lens. The first electrode and the second electrode are over the substrate and configured to generate a first electric field. The first lens is between the first electrode and the second electrode and has a focal length that varies in response to the first electric field applied to the first lens.

Abstract: A display device includes a first substrate, a second substrate, a plurality of drive ICs and at least one flexible circuit board. The first substrate has a first region and a second region near to the first region. The second substrate is disposed on the first region and has a lateral side. The plurality of drive ICs are disposed on the second region and arranged along the lateral side. The at least one flexible circuit board is disposed on the second region and disposed correspondingly to the lateral side. Wherein in a top view of the display device, each of the plurality of drive ICs does not overlap with the at least one flexible circuit board in a direction perpendicular to an extending direction of the lateral side.

Abstract: A heat dissipation assembly is disclosed and includes a fan, a vapor chamber and a heat dissipation fin set. The fan includes a fan frame, an impeller and a fan cover. The impeller is disposed on the fan frame and accommodated in an accommodation space. The impeller includes plural metal blades and a hub, and the plural metal blades are radially arranged on the periphery of the hub to form a dense-metal-blade impeller. The fan cover is assembled with the fan frame to form an outlet, and the fan cover includes an inlet. The vapor chamber includes an upper plate and a lower plate assembled with each other. The upper plate or the lower plate is connected to the fan cover, and the vapor chamber and the fan cover are coplanar. The heat dissipation fin set is connected to the lower plate and spatially corresponding to the outlet.

Abstract: In example implementations, an apparatus is provided. The apparatus includes a riser card body, a first interface, a first 2×8 slot on a surface of the riser card body, and a second 2×8 slot on a same side of the surface of the riser card body as the first 2×8 slot. The first interface includes a first set of fingers and a second set of fingers at an end of the riser card body to connect to a peripheral component interconnect express (PCIe) slot of a motherboard. The first 2×8 slot and the second 2×8 slot are positioned perpendicular to the PCIe slot of the motherboard.

Abstract: The present application discloses a light sensor circuit, which comprises a photodiode and a capacitor unit. The cathode of the photodiode is controlled by a capacitive unit to maintain the same or close voltage level as the anode of the photodiode, which significantly reduces the effect of the dark current of the photodiode. Thus, the light sensor circuit can effectively maintain the performance and accuracy of an analog-to-digital converter applying the light sensor circuit. The circuit design difficulty and manufacturing cost are also significantly reduced.

Abstract: Semiconductor structures and methods of forming the same are provided. A semiconductor structure according to the present disclosure includes an active region having a channel region and a source/drain region, a gate structure over the channel region, a gate spacer layer disposed over the channel region and extending along a sidewall of the gate structure, an epitaxial source/drain feature over the source/drain region, a contact etch stop layer (CESL) disposed on the epitaxial source/drain feature and extending along a sidewall of the gate spacer layer, a source/drain contact disposed over the epitaxial source/drain feature, and a dielectric cap layer disposed over the gate structure, the gate spacer layer and at least a portion of the CESL. A sidewall of the source/drain contact is in direct contact with a sidewall of the CESL.

Abstract: A semiconductor device includes an active region, a LOCOS region formed within the active region and that extends vertically above a top surface of the active region, a gate region formed above the top surface of the active region, and a polysilicon resistor having a bottom surface that is offset vertically and physically isolated from a top surface of the LOCOS region. The active region includes a source region laterally disposed from the gate region, a drain region laterally disposed from the gate region, and a drift region laterally disposed between the gate region and the drain region. The polysilicon resistor is formed above the drift region. The active region further includes a first charge balance region formed in the active region below the drift region.

Abstract: A memory device and a manufacturing method thereof is described. The memory device includes a transistor structure over a substrate and a ferroelectric capacitor structure electrically connected with the transistor structure. The ferroelectric capacitor structure includes a top electrode layer, a bottom electrode layer and a ferroelectric stack sandwiched there-between. The ferroelectric stack includes a first ferroelectric layer, a first stabilizing layer, and one of a second ferroelectric layer or a second stabilizing layer. Materials of the first stabilizing layer and a second stabilizing layer include a metal oxide material.

Abstract: A method of forming a semiconductor device is provided. A gate electrode is formed within an insulating layer that overlies a substrate. A gate dielectric layer is formed over the gate electrode. A first oxide semiconductor layer is formed over the gate dielectric layer. A dielectric layer is formed over the first oxide semiconductor layer. The dielectric layer and the first oxide semiconductor layer are patterned, so as to form first and second openings that expose portions of the gate dielectric layer. An interfacial layer is conformally formed on sidewalls and bottoms of the first and second openings. A second oxide semiconductor layer is formed over the interfacial layer in the first and second openings. A metal layer is formed over the second oxide semiconductor layer in the first and second openings.

Abstract: A method of forming a semiconductor device includes forming a P-type heavily doped region in a substrate. A sacrificial layer is formed on the substrate and covers the P-type heavily doped region. The sacrificial layer is patterned, so that sidewalls of the sacrificial layer are above the substrate inside the P-type heavily doped region. An N-type heavily doped region adjacent to the P-type heavily doped region is formed in the substrate by using the sacrificial layer as mask. A wet etching process is performed to retract the sidewalls of the sacrificial layer to the substrate inside the N-type heavily doped region. A P-type lightly doped region is formed in the substrate by using the sacrificial layer as mask. The P-type lightly doped region is adjacent to the N-type heavily doped region, and is in contact with bottoms of the P-type heavily doped region and the N-type heavily doped region.