Patents by Inventor Wen Cheng

Wen Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6099800
    Abstract: A hydrogen peroxide destroying composition is disclosed, which includes 1-30% of a hydrogen peroxide destroying component, 0.5-40% of a binder, 0-20% of a disintegrant and 0.02-3% of a chlorophyll coloring agent, based on the weight of the hydrogen peroxide destroying composition. When the hydrogen peroxide destroying composition of the present invention in the form of a tablet or pills added into a H.sub.2 O.sub.2 -containing aqueous medium for disinfecting contact lens, said coloring agent will color the aqueous medium indicating an initiation of neutralization of residual H.sub.2 O.sub.2 caused by the hydrogen peroxide destroying component after a period of time from the addition.
    Type: Grant
    Filed: August 14, 1998
    Date of Patent: August 8, 2000
    Assignee: Sinphar Pharmaceutical Co., Ltd.
    Inventor: Hui-Wen Cheng
  • Patent number: 6082384
    Abstract: A hand support for a walker frame with two rear frame bars, having a vertical bar, the upper end thereof being located lower than the upper side of the walker frame; a support bar with two ends that are hingedly connected to one of the rear frame bars and to the upper end of the vertical bar; and a stabilizing bar, mounted below the support bar parallel thereto, with two ends that are hingedly connected to one of the rear frame bars and to the upper end of the vertical bar. The support bar and the stabilizing bar are horizontally oriented, with the vertical bar resting on the ground, so as to aid a user to get up from a sitting position, or tilted upwards, with the vertical bar close to the rear frame bar of the walker frame to allow the user to walk unhindered using the walker frame.
    Type: Grant
    Filed: May 1, 1998
    Date of Patent: July 4, 2000
    Inventor: Yu Wen Cheng
  • Patent number: 6082922
    Abstract: A foldable joint for a playpen comprises a seat having two spaced apart side plates one of which defines holes respectively in both end and an integral connecting plate; two tubes respectively pivotally mounted on the end of the seat by a pivot, each having a first aperture and second aperture defined therein; and two U-shaped trips respectively disposed in the tubes, each having a first lug being inserted through the first aperture of the tube and the hole of the side plate, and a second lug being inserted through the second aperture of the tube; whereby, the tubes can be folded upward when the first lugs are pressed inward.
    Type: Grant
    Filed: August 12, 1998
    Date of Patent: July 4, 2000
    Inventor: Ching-Wen Cheng
  • Patent number: 6071826
    Abstract: A method for forming a CMOS image sensor spacer structure. A polysilicon gate electrode is formed on a substrate; a thin layer of first dielectric is deposited over the exposed surfaces of the gate electrode and the top of the substrate. Next a second layer of dielectric is deposited after which etching is performed to create the electrode spacer. The deposited second layer of dielectric serves as an etch stop and prevents damage to the substrate surface between spacers of the gate electrodes. An alternate method uses a thin ply layer as the stop layer and, in so doing, source/drain damage caused by the white pixel problem.
    Type: Grant
    Filed: February 12, 1999
    Date of Patent: June 6, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ching-Wen Cho, Hua-Yu Yang, Sen-Fu Chen, Chih-Heng Shen, Wen-Cheng Chien, Chang-Jen Wu, Chi-Hsin Lo, Hui-Chen Chu
  • Patent number: 6069042
    Abstract: A method is provided for forming multi-layer spacer GELS) for flash EEPROM devices. A composite tetraethyl orthosilicate-silicon nitride (TEOS/Si.sub.3 N.sub.4) layer is deposited over the floating gate and anisotropically etched to form the MLS. The resulting MLS is better controlled dimensionally with the attendant advantage, therefore, of better definition of gate and channel lengths in the memory cell for more predictable and better programming and erase performance of EEPROMS.
    Type: Grant
    Filed: February 13, 1998
    Date of Patent: May 30, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Wen-Cheng Chien, Hui-Chen Chu
  • Patent number: 6054359
    Abstract: A high-sheet-resistance polysilicon resistor for integrated circuits is achieved by using a two-layer polysilicon process. After forming FET gate electrodes and capacitor bottom electrodes from a polycide layer, a thin interpolysilicon oxide (IPO) layer is deposited to form the capacitor interelectrode dielectric. A doped polysilicon layer and an undoped polysilicon layer are deposited and patterned to form the resistor. The doped polysilicon layer is in-situ doped to minimize the temperature and voltage coefficients of resistivity. Since the undoped polysilicon layer has a very high resistance (infinite), the resistance is predominantly determined by the doped polysilicon layer.
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: April 25, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Yu-Ming Tsui, Wen-Cheng Chang, Shung-Jen Yu, Sheng-Yih Ting
  • Patent number: 6031264
    Abstract: A flash EPROM device includes a floating gate electrode with a top surface and sidewalls is formed on a gate oxide layer covering a semiconductor substrate. A polyoxide cap layer is formed on the top surface of the floating gate electrode. A blanket tunnel oxide layer covers the cap layer, the sidewalls of the floating gate electrode, and the exposed surfaces of the gate oxide layer. A spacer structure is formed on the surface of the tunnel oxide layer adjacent to the sidewalls of the floating gate electrode and above the gate oxide layer. A dielectric, silicon nitride inner spacer, having an annular or an L-shaped cross section, is formed on the blanket tunnel oxide layer adjacent to the sidewalls of the floating gate electrode. In the case of the L-shaped cross section inner spacer, an outer dielectric, spacer is formed over the inner dielectric, spacer. A blanket interelectrode dielectric layer covers the blanket tunnel oxide layer, and the spacer structure.
    Type: Grant
    Filed: February 25, 1999
    Date of Patent: February 29, 2000
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Wen-Cheng Chien, Hui-Jen Chu, Chen-Peng Fan
  • Patent number: 6020259
    Abstract: A method for forming a tungsten plug is disclosed herein. A TiSi.sub.2 layer is selectively formed in a contact hole by using chemical vapor deposition. Then, a TiN layer is formed on the surface of the contact hole and on the TiSi.sub.2 layer. Next, a tungsten layer is formed on the TiN layer and in the contact hole. A CMP is used to remove a portion of the tungsten layer and TiN layer for planarization.
    Type: Grant
    Filed: May 1, 1997
    Date of Patent: February 1, 2000
    Assignee: Mosel Vitelic, Inc.
    Inventors: Hsi-Chieh Chen, Guan-Jiun Yi, Wen-Cheng Tu, Kuo-Lun Tseng
  • Patent number: 6001690
    Abstract: A method is provided for forming nitride spacers for flash EEPROM devices. A silicon nitride layer is formed over the floating gate in a memory cell. Unlike in conventional methods where the nitride layer is usually subjected to anisotropic etching, it is disclosed in this invention that when partial isotropic/anisotropic etching of a particular recipe is performed, the resulting nitride spacers are better controlled dimensionally with the attendant advantage, therefore, of better definition of gate and channel lengths during subsequent implantations. In a second embodiment, the partial isotropic/anisotropic etching is followed by full anisotropic etching of another recipe with even better defined parameters for the flash EEPROMS.
    Type: Grant
    Filed: February 13, 1998
    Date of Patent: December 14, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Cheng Chien, Ming-Yi Lin, Li-Ming Huang, Chen-Peng Fan
  • Patent number: 5988928
    Abstract: A foldable joint of a playpen comprises a U-shaped body having an opening defined in a side face thereof; two linkages respectively pivotally mounted on each end of the body by pivots each having a plug forming a plane on the bottom of the plug provided in the end mounted on the body; and a first spring disposed between the plug and the pivot; a locking means of which the front portion corresponds to the opening, movably mounted in the body by rivets having two wings respectively formed on both sides of the locking means; and a second spring disposed between the back portion of the locking means and the inner wall of the body.
    Type: Grant
    Filed: September 22, 1998
    Date of Patent: November 23, 1999
    Inventor: Ching-Wen Cheng
  • Patent number: 5975496
    Abstract: The present invention is a multiple pump transmission jack for use with removing and repairing transmissions. The jack has two hydraulic pumps mounted on a base which are connected with interrelated oil passages or conduits formed within the base, which is operated by a pedal connected with the two pumps for drawing hydraulic oil from a reservoir and into an oil pressure cylinder to easily and quickly raise a piston rod within the oil pressure cylinder saving the operator's effort and increasing the efficiency of operation. The jack also includes an overload system that prevents the operator from placing a load on the jack which is greater than its rated load, thus preventing danger.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: November 2, 1999
    Assignee: Norco Industries, Inc.
    Inventors: Wen-cheng Hong, Jiun-hong Lin
  • Patent number: 5970540
    Abstract: An improved foldable base for a playpen includes a first pair of side rails pivotally connected to a first side joint and a second pair of side rails pivotally connected to a second side joint. A pair of T-shaped joints are situated between the pairs of rails. A center joint is located in a center of the playpen and has an outer and an inner joint members pivotally connected with each other. Two pairs of bars are provided, each pair of the bars pivotally connected with one of the respective T-shaped joints and with two of the respective side rails. Two linking rods are also provided, each pivotally connected at an end thereof with one of the respective T-shaped joints and secured at an opposing end thereof to one of the respective joint members of the center joint.
    Type: Grant
    Filed: June 18, 1998
    Date of Patent: October 26, 1999
    Inventor: Ching-Wen Cheng
  • Patent number: 5940905
    Abstract: A bathing chair positioning system for use on a bathing chair. The bathing chair has a frame with two parallel transverse bars shaped like inverted letters U and with ends that are placed inside and outside a bathtub, two connecting bars, connecting the two transverse bars, a seat with a bottom and a back rest, with two parallel L-shaped bars connecting the bottom and the back rest and mounted on gliding elements, such that the seat is glidingly movable along the two transverse bars for a user to enter and to leave the bathtub, and a handle for the user pulling herself or himself into the bathtub or out of the bathtub. The bathing chair positioning system comprises positioning elements having fixed ends fastened to the L-shaped bars of the seat and blocking ends extending away from the seat and engaging with the connecting bars when the seat is at an outside position for the user safely entering and leaving the seat or at a bathing position.
    Type: Grant
    Filed: August 12, 1998
    Date of Patent: August 24, 1999
    Inventor: Yu-Wen Cheng
  • Patent number: 5915742
    Abstract: A car door separating and attaching device includes a base, a jack mounted on the base, an angle adjusting base and a clamp frame mounted on the jack. The angle adjusting base adjusts the angle of the clamp frame to suit to the door of a car, and the jack lifts them to a height needed. Then the distance between two clamp rods of the clamp frame and then the distance between the two clamp rods and a lateral tube are adjusted according to the size of the door of a car to be separated or attached. Thus the door or tailgate of a car is securely clamped by the device, permitting only one worker perform separating or attaching work with easiness and convenience.
    Type: Grant
    Filed: October 14, 1997
    Date of Patent: June 29, 1999
    Inventor: Wen-Cheng Hung
  • Patent number: 5911653
    Abstract: The present invention relates to a foldable playpen which comprises a main frame constructed of top articulated bars and upright bars, which is provided with a covering to form an enclosure so that a baby can be left to play therewithin. The primary feature of the present invention resides in that the main frame includes a bottom sub-frame structure pivotably mounted at the bottom of the main frame. The bottom sub-frame structure includes at least first, second, third and fourth bottom side-bars, and a folding mechanism. The first, second, third and fourth bottom side-bars are arranged in a pivotingly foldable relationship with the folding mechanism, whereby the present invention can be conveniently folded into a compact package when it is not in use or extended to an erect enclosure for allowing a baby to play therewithin.
    Type: Grant
    Filed: December 19, 1997
    Date of Patent: June 15, 1999
    Inventor: Ching-Wen Cheng
  • Patent number: 5904570
    Abstract: The polymeric residues which remain after the plasma-enhanced subtractive etching of polycrystalline layers in reactive halogen-containing gases are removed by a combination ashing in oxygen gas and subsequent removal with an organic solvent.
    Type: Grant
    Filed: May 20, 1996
    Date of Patent: May 18, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sen-Fu Chen, Bao-Ru Yang, Wen-Cheng Chang, Heng-Hsin Liu
  • Patent number: 5879993
    Abstract: A method of forming a spacer structure adjacent to the sidewall of a floating gate electrode with a top surface and sidewalls, the floating gate electrode being formed on a silicon oxide dielectric layer, and the silicon oxide dielectric layer being formed on the top surface of a semiconductor substrate include the following steps. Form a cap layer on the floating gate electrode, and a blanket tunnel oxide on the device. Form an inner dielectric, spacer layer over the device including the cap layer and the sidewalls thereby with conforming sidewalls, and an outer dielectric, spacer layer over the inner dielectric, spacer layer including the conforming sidewalls. Partially etch away the outer dielectric, spacer layer with a dry etch to form a outer dielectric spacer adjacent to the conforming sidewalls. Then partially etch away more of the outer dielectric, spacer layer with a wet etch to expose a portion of the conforming sidewalls of the inner dielectric, spacer layer.
    Type: Grant
    Filed: September 29, 1997
    Date of Patent: March 9, 1999
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Cheng Chien, Hui-Jen Chu, Chen-Peng Fan
  • Patent number: 5873984
    Abstract: A thin-film magnetic recording media is prepared which contains a carbon overcoat sputtered on a magnetic recording layer. The carbon overcoat is sputtered on the magnetic recording layer using a sputtering process which is conducted in a sputtering chamber having an inert gas and a mixture of nitrogen gas and hydrogen gas, wherein said nitrogen gas and hydrogen gas are provided at a mole ratio of nitrogen/hydrogen between about 0.5 and about 1. The hydrogen and nitrogen doped amorphous carbon overcoat exhibits excellent mechanical properties and tribological performance.
    Type: Grant
    Filed: November 5, 1997
    Date of Patent: February 23, 1999
    Assignee: Trace Storage Tech. Corp.
    Inventors: Fu-Wen Cheng, James Liang, Tain-Wong Hung, Hung-huei Liang
  • Patent number: 5842712
    Abstract: An improved frame involves two main principles which contribute to a superior bicycle frame. The first principle involves the use of a tear drop cross sectionally shaped down tube which is oriented with the small radius side facing forward and down. This orientation of the tube, for a given size of bicycle frame yields an unexpectedly high force to failure characteristic. In the case of a forward shock as by hitting a pothole, rock, or log, the resulting frame will be much more resistant to damage. Secondly, the preferred embodiment of the frame includes three sections, including a teardrop section, a transition section in which the teardrop shape transitions to a round shape, and a length of straight tube. The transition to a round shape, with or without a length of constant circular round shape adds rigidity to the bottom of the frame to provide provide increased lateral support.
    Type: Grant
    Filed: August 19, 1996
    Date of Patent: December 1, 1998
    Inventor: Wen Cheng Hsieh
  • Patent number: D413600
    Type: Grant
    Filed: September 1, 1998
    Date of Patent: September 7, 1999
    Assignee: Industrial Technology Research Institute
    Inventors: Po-Wen Cheng, Wen-Chiuan Liao, Jeng-Weei Lin, Jyhhwa Ferng, Tai-Yuan Wang, Shiuan-Hung Lee, Wei-Hsing Liu