Abstract: A non-volatile memory device includes at least one memory cell, and the at least one memory cell includes a substrate, a stacked structure, a tunneling dielectric layer, a floating gate, a control gate structure, and an erase gate structure. The stacked structure is disposed on the substrate, and includes a gate dielectric layer, an assist gate, and an insulation layer stacked in order. The tunneling dielectric layer is disposed on the substrate at one side of the stacked structure. The floating gate is disposed on the tunneling dielectric layer and includes an uppermost edge and a curved sidewall. The control gate structure covers the curved sidewall of the floating gate. The erase gate structure covers the floating gate and the control gate structure, and the uppermost edge of the floating gate is embedded in the erase gate structure.

Abstract: A flushing switch device with automatic pressing stroke detection is provided, which is applied to the flushing switches of a toilet. The flushing switch device with automatic pressing stroke detection includes a capacitive sensor, an actuator, and a protector. The capacitive sensor senses a user's hand movements to generate a sensing signal. The actuator includes a driver and a pressing mechanism; the driver drives the pressing mechanism to press one of the flushing switches. The protector includes a detector and a controller; the detector detects a load variation during an operation of the actuator to generate a detection signal; the controller receives the sensing signal and correspondingly generates a control signal to control the actuator according to the sensing signal and the detection signal.

Abstract: An insulation resistance detection system for an electric vehicle is used to detect a positive insulation resistance between a positive electrode of a battery of the electric vehicle and an equipment grounding point, and detect a negative insulation resistance between a negative electrode of the battery and the equipment grounding point. The insulation resistance detection system includes a negative detection circuit, a positive detection circuit, and a control unit. The control unit controls the negative detection circuit to be charged to generate a first capacitor voltage, and controls the positive detection circuit to be charged to generate a second capacitor voltage. The control unit determines whether the negative insulation resistance is abnormal according to the first capacitor voltage and a battery voltage of the battery, and determines whether the positive insulation resistance is abnormal according to the second capacitor voltage and the battery voltage.

Abstract: A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.

Abstract: A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern includes: first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region; and second lines extending from the anchored region of the membrane toward the central region of the membrane, each of the first lines or each of the second lines including non-straight lines.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

Abstract: A semiconductor device includes an active region, a LOCOS region formed within the active region and that extends vertically above a top surface of the active region, a gate region formed above the top surface of the active region, and a polysilicon resistor having a bottom surface that is offset vertically and physically isolated from a top surface of the LOCOS region. The active region includes a source region laterally disposed from the gate region, a drain region laterally disposed from the gate region, and a drift region laterally disposed between the gate region and the drain region. The polysilicon resistor is formed above the drift region. The active region further includes a first charge balance region formed in the active region below the drift region.

Abstract: A light-emitting display device includes at least a transparent substrate, a first patterned conductive layer and a second patterned conductive layer respectively disposed on top of the opposite first and second surfaces of the transparent substrate, and a plurality of inorganic electroluminescent objects disposed in form of an array on top of the first surface of the transparent substrate with the inorganic electroluminescent objects being spaced from one another in a distance of at least 2 mm. Each of the inorganic electroluminescent objects has one power pin and light signal pins for red light, green light, and blue light. The transparent substrate has a plurality of through holes between the first surface and the second surface. The first patterned conductive layer has a plurality of soldering pad regions respectively in connection with the power pin and the light signal pins.

Abstract: A capacitor includes a bottom capacitor plate including a rough upper surface with a root mean square (RMS) surface roughness of at least 1.14, a capacitor dielectric layer on the bottom capacitor plate and contacting the rough upper surface of the bottom capacitor plate, and an upper capacitor plate on the capacitor dielectric layer. A semiconductor device includes a transistor located on a substrate, a dielectric layer on the transistor, and a capacitor in the dielectric layer and including a bottom capacitor plate connected to a source region of the transistor and having a rough upper surface with a root mean square (RMS) surface roughness of at least 1.14.

Abstract: A matte polyester film and a method for manufacturing the same are provided. The method for manufacturing the matte polyester film includes: providing a recycled polyester material; physically regenerating a part of the recycled polyester material to form physically regenerated polyester chips having a first intrinsic viscosity; chemically regenerating another part of the recycled polyester material to form chemically regenerated polyester chips having a second intrinsic viscosity less than the first intrinsic viscosity; mixing matte regenerated polyester chips, the physically regenerated polyester chips, and the chemically regenerated polyester chips according to a predetermined intrinsic viscosity so as to form a polyester masterbatch material; melting and then extruding the polyester masterbatch material to obtain the matte polyester film having the predetermined intrinsic viscosity.

Abstract: A system and method for chemical mechanical polishing (“CMP”) pad replacement on a CMP processing tool. A platen carrier having two or more platens is positioned within a platen cleaning process module. Each platen includes a CMP pad affixed thereto, and is capable of being independently rotated during operations. When a pad requires replacement, the platen carrier rotates towards a pad tearer tool, which extends and pivots to remove the used pad from the platen as the carrier rotates. A pad tape replacement module is positioned above the CMP tool with pad tape extending from a supply roll to a recycle roll. As the pad tape transits through the module, a backing of the tape is separated and recycled. A pad disposed in the pad tape is then applied to a platen via a pressure roller.

Abstract: Disclosed is a vacuum chuck and a method for securing a warped semiconductor substrate during a semiconductor manufacturing process so as to improve its flatness during a semiconductor manufacturing process. For example, a semiconductor manufacturing system includes: a vacuum chuck configured to hold a substrate, wherein the vacuum chuck comprises, a plurality of vacuum grooves located on a top surface of the vacuum chuck, wherein the top surface is configured to face the substrate; and a plurality of flexible seal rings disposed on the vacuum chuck and extending outwardly from the top surface, wherein the plurality of flexible seal rings are configured to directly contact a bottom surface of the substrate and in adjacent to the plurality of vacuum grooves so as to form a vacuum seal between the substrate and the vacuum chuck, and wherein each of the plurality of flexible seal rings has a zigzag cross section.

Abstract: An aromatic liquid crystal polyester, having repeating units represented by formulae (1) and (2), respectively: where R?, Ar1, Ar2, Ar3, X, Y1, Y2 and Z are those as defined in the specification. Also, a liquid crystal polyester composition including the aromatic liquid crystal polyester and a solvent. The composition has an improved viscosity stability. Also, a liquid crystal polyester film prepared from the liquid crystal polyester composition and a method for manufacturing the same. The liquid crystal polyester film has excellent properties such as a low hygroscopicity and a low dissipation factor (Df).

Abstract: A micro-LED display includes a first LED subpixel, a second LED subpixel, a third LED subpixel and a fourth LED subpixel. The first LED subpixel is configured to emit a red light. The second LED subpixel is configured to emit a green light. The third LED subpixel is configured to emit a blue light. The fourth LED subpixel is configured to emit a yellow light, in which the yellow light emitted by the fourth LED subpixel has a peak wavelength that satisfies ?p,Yellow,lower_limit<?p. ?p,Yellow,lower_limit is a lower limit of the peak wavelength of the yellow light, ?p is the peak wavelength of the yellow light.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit generates a clock signal and adjust a clock frequency of the clock signal according to a control voltage generated by the processor circuit. The processor circuit calculates a current frequency aging rate value based on a current clock frequency. The processor circuit calculates a control voltage regulation rate value based on the current frequency aging rate value and a control voltage slope, and compensates the control voltage based on the control voltage regulation rate value in the holdover state. Alternatively, the processor circuit calculates a frequency regulation value based on the current frequency aging rate value and an oscillator resolution of the synchronizer, and provides the frequency regulation value to the synchronizer in the holdover state to compensate an output frequency of the synchronizer.

Abstract: A heat dissipation assembly is disclosed and includes a fan, a vapor chamber and a heat dissipation fin set. The fan includes a fan frame, an impeller and a fan cover. The impeller is disposed on the fan frame and accommodated in an accommodation space. The impeller includes plural metal blades and a hub, and the plural metal blades are radially arranged on the periphery of the hub to form a dense-metal-blade impeller. The fan cover is assembled with the fan frame to form an outlet, and the fan cover includes an inlet. The vapor chamber includes an upper plate and a lower plate assembled with each other. The upper plate or the lower plate is connected to the fan cover, and the vapor chamber and the fan cover are coplanar. The heat dissipation fin set is connected to the lower plate and spatially corresponding to the outlet.

Abstract: The disclosed technology is directed to a computing device for detecting and preventing melting of a component of the computing device. In some examples, the computing device includes a cable that connects a power supply unit and an add-on card, and a thermal protection controller. Based on a sensor signal from a temperature sensor of the cable, the thermal protection controller determines that a temperature associated with the cable exceeds a threshold temperature. Responsive to determining that the temperature associated with the cable exceeds the threshold temperature, the thermal protection controller causes the power supply unit to cease supplying power to the add-on card by transmitting an overtemperature signal through the cable.

Abstract: In some examples, a system detects disabling of a driver of a storage control feature included in a main processor of the system, where the storage control feature to manage access of a storage device. In response to detecting the disabling of the driver of the storage control feature included in the main processor, the system initiates a remediation action to prevent a fault in the system.

Abstract: A light-emitting device array includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. A first beam shaping structure of the first light-emitting device is configured to convert light emitted by a first light-emitting structure of first light-emitting device into first structured light. A second beam shaping structure of the second light-emitting device is configured to convert light emitted by a second light-emitting structure of second light-emitting device into second structured light. Speckle patterns and spatial distributions of the first structured light and the second structured light on a projection plane are the same. A third beam shaping structure of the third light-emitting device is configured to convert light emitted by a third light-emitting structure of third light-emitting device into third structured light.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a semiconductor substrate, a hydrogen sensing stacked layer disposed over the semiconductor substrate, and a protection layer disposed on the hydrogen sensing stacked layer. The hydrogen sensing stacked layer comprises a hydrogen-free oxide layer and a metal oxide layer disposed on the hydrogen-free oxide layer.