Abstract: A semiconductor device comprises a first conductive feature on a semiconductor substrate, a bottom electrode on the first conductive feature, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. A spacer contacts a sidewall of the top electrode, a sidewall of the MTJ stack, and a sidewall of the bottom electrode. A conductive feature contacts the top electrode.

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

Abstract: A polyester film and a method for producing the same are provided. The polyester film includes a physically recycled polyester resin and a chemically recycled polyester resin. The physically recycled polyester resin is formed of physically recycled polyester chips, and the physically recycled polyester chips have a first intrinsic viscosity. The chemically recycled polyester resin is formed of chemically recycled polyester chips, and the chemically recycled polyester chips have a second intrinsic viscosity. The second intrinsic viscosity is less than the first intrinsic viscosity. The physically recycled polyester chips and the chemically recycled polyester chips are mixed with each other and melt extruded according to a predetermined intrinsic viscosity, so that the polyester film has the predetermined intrinsic viscosity.

Abstract: A method, a system, a device, and a storage medium for operation resource placement of deep learning are provided. The method includes: acquiring training operations to be placed and corresponding priorities; based on an order of the priorities, selecting a network structure for operation placement according to required resource amount of the training operations in sequence; the network structure including a server, a top of rack, a container group set denoted as Podset and a trunk layer switch; based on the selected network structure, taking a transmission amount of network data in a training process as an optimization target to perform minimization optimization, and obtaining a corresponding operation placement scheme.

Abstract: A side by side image detection method and an electronic apparatus using the same are provided. The side by side image detection method includes the following steps. A first image with a first image size is obtained. A second image with a second image size that conforms to a side-by-side image format is detected within the first image by using a convolutional neural network model.

Abstract: An electronic device including an active region and a peripheral region, and includes a substrate including a first edge; a first electrode layer disposed on the substrate; a first conductive glue disposed on the substrate and in the peripheral region; a second conductive glue disposed on the substrate and in the peripheral region; an insulating glue disposed in the peripheral region and overlapped with the first conductive glue and the second conductive glue; and a first metal element fixed on the first electrode layer through the first conductive glue and the insulating glue; wherein in a top view, the insulating glue extends along an extension direction parallel to the first edge, and along the extension direction, a sum of lengths of the first conductive glue and the second conductive glue is less than a length of the insulating glue.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a dielectric layer formed over the substrate. The semiconductor device structure further includes a movable membrane formed over the dielectric layer. In addition, the movable membrane includes first recessed portions arranged in a ring shape in a top view and second recessed portions surrounded by the first recessed portions.

Abstract: A low noise cable core and a manufacturing method thereof and a low noise cable using the same include an insulated conductor, a first type conductive layer, and a second type conductive layer. The insulated conductor includes a conductive core and an insulation layer encapsulating the conductive core. The first type conductive layer encapsulates the insulated conductor, and the second type conductive layer encapsulates the first type conductive layer. The first type conductive layer and the second type conductive layer are respectively formed by way of a first forming method and a second forming method different from the first forming method.

Abstract: Various techniques pertaining to non-coherent noise reduction for audio enhancement on a multi-microphone mobile device are proposed. A processor receives a plurality of signals from a plurality of audio sensors corresponding to a plurality of channels responsive to sensing by the plurality of audio sensors. The processor then performs a non-coherent noise reduction on one or more signals of the plurality of signals to suppress one or more non-coherent noises in each of the one or more signals based on a respective signal-to-noise ratio (SNR) associated with each of the one or more signals. The processor further combines the plurality of signals subsequent the noise reduction to generate an output signal.

Abstract: A frequency generating device and an operation method thereof are provided. The frequency generating device includes an oscillator circuit and a processor circuit. The oscillator circuit is configured to generate a clock signal and adjust a clock frequency of the clock signal according to a control voltage. The processor circuit is coupled to the oscillator circuit and is configured to generate the control voltage. The processor circuit reads a frequency aging rate value and a control voltage slope of the oscillator circuit from the oscillator circuit, calculates a control voltage regulation rate value corresponding to the frequency aging rate value and the control voltage slope, and compensates the control voltage based on the control voltage regulation rate value. Alternatively, the processor circuit reads the control voltage regulation rate value from the oscillator circuit, and compensates the control voltage based on the control voltage regulation rate value.

Abstract: An apparatus and method for physical vapor deposition includes a magnetron having a plurality of electromagnets disposed between a base and a magnetic conductive plate. The magnetron includes a plurality of individually controlled electromagnets between a base and an electromagnetic plate. The magnetron controls the polarity and strength of current supplied to the respective electromagnets to generate magnetic fields that confine electrons to areas near a target material within the deposition chamber.

Abstract: A mechanical equipment includes a fixed body and a movable body. The fixed body includes a sleeve. The movable body includes a limiting rod, a guiding rod, and a gear assembly. The guiding rod and the limiting rod are linked to each other through the gear assembly, which facilitates the positioning of the small sized and light limiting rod and the sleeve. The limiting rod and the sleeve can be aligned with a small force. After the guiding rod is aligned with the sleeve, the guiding rod and the limiting rod are linked through the gear assembly, the sleeve only bears the gravity of the limiting rod and does not need to bear the sum of the gravity of the limiting rod, the gear assembly, and the guiding rod, thus preventing the sleeve from bearing a too large gravity after the movable body and the fixed body are assembled.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: An augmented reality (AR) system and an operation method thereof are provided. The AR system includes a target device and an AR device. The AR device captures the target device to generate a picture. The target device provides a digital content to the AR device. The AR device tracks the target device in the picture for an AR application. During the AR application, the AR device overlays the digital content on the target device in the picture.

Abstract: A magnetic buckle device has a first base, a second base, a first component mounted to the first base, a second component mounted to the second base, and a lock mechanism. A magnetic attraction force is generated between the first component and the second component to move the first base and the second base toward each other. The lock mechanism is connected to the second base and has a locked status and an unlocked status. The lock mechanism has an engaging component and an unlocking component. In the locked status, the first base and the engaging component engage with each other such that the first base and the engaging component are inseparable. In the unlocked status, the unlocking component is capable of being operated to allow the first base and the engaging component to disengage from each other.

Abstract: The invention introduces an apparatus and a method for expanding round keys during data encryption. The method includes: configuring a word-processing circuitry to operate in a first mode to calculate a first intermediate calculation result corresponding to an even-number round key according to a last double word of a 0th double word to a 7th double word in each even-number clock cycle starting from a 2nd clock cycle; and configuring the word-processing circuitry to operate in a second mode to calculate a second intermediate calculation result corresponding to an odd-number round key according to the last double word of the 0th double word to the 7th double word in each odd-number clock cycle starting from a 3rd clock cycle. In the first mode, a first data path is formed in the word-processing circuitry, which includes a word split circuitry, a rotate-word circuitry, a substitute-word circuitry, a round-constant circuitry and a word concatenation circuitry.

Abstract: A titanium alloy product includes a titanium alloy substrate and a plurality of first holes defined in a surface of the titanium alloy substrate. The first holes have an opening on the surface of the titanium alloy substrate and an inner wall connecting with the opening, a diameter of the inner space is greater than a diameter of the opening. The product tensile strength of bonding between the titanium alloy product and a material part filled in the first holes is very high. A housing with the titanium alloy product and a method for manufacturing the titanium alloy product are also disclosed.

Abstract: A signal loss compensation method, for compensating an input signal comprising (K+Y) lost signal units and normal signal units. The signal loss compensation method comprises: compensating 1st to (K?1)th lost signal units by a first signal loss concealment algorithm to generate a first compensation signal and accordingly generating a first synthetic signal; compensating (K+X+1)th to (K+Y) th lost signal units by a second signal loss concealment algorithm to generate a second compensation signal and accordingly generating a second synthetic signal; compensating K th to (K+X)th lost signal units by the first signal loss concealment algorithm or the second signal loss concealment algorithm to generate a third synthetic signal; generating an output signal according to the first synthetic signal, the second synthetic signal, the third synthetic signal and the normal signal units. K and Y are positive integers, X is a natural number, and Y is larger than X.

Abstract: A planetary bevel gear automatic limited slip differential includes five portions that are a main differential, a planetary bevel gear controller, a left drive axle shaft, a right drive axle shaft, and clutches. The planetary bevel gear controller includes an outer control unit and an inner control unit, the outer control unit includes four planetary bevel gears on an outer layer and a bevel gear fixed on a housing, and the inner control unit includes inner planetary bevel gears on an inner side and two bevel gears which have the same parameters and are meshed with the planetary bevel gears. The bevel gears are fixedly connected with outer rings of two overrunning clutches, respectively, and inner rings of the overrunning clutches and the right drive axle shaft are connected together by splines.

Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.