Abstract: A head mounted system includes a physiological signal sensor, a signal processing circuit, a memory, an application processor, and an eyeglass frame. The physiological signal sensor monitors a physiological state to output a physiological signal. The signal processing circuit determines whether the physiological state is abnormal according to the physiological signal. When it is not abnormal, the signal processing circuit controls the physiological signal sensor to monitor the physiological state at a first monitoring frequency. When it is abnormal, the signal processing circuit outputs a warning signal, and controls the physiological signal sensor to monitor the physiological state at a second monitoring frequency greater than the first monitoring frequency. The application processor receives the warning signal and stores physiological data corresponding to the physiological signal in the memory.

Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

Abstract: A semiconductor device includes an isolation feature in a substrate. The semiconductor device further includes a first source/drain feature in the substrate, wherein a first side of the first source/drain feature contacts the isolation feature, and the first source/drain feature exposes a portion of the isolation feature below a top surface of the substrate. The semiconductor device further includes a silicide layer over the first source/drain feature. The semiconductor device further includes a dielectric layer along the exposed portion of the isolation feature below the top surface of the substrate, wherein the dielectric layer contacts the silicide layer. The semiconductor device further includes a second source/drain feature in the substrate on an opposite side of a gate stack from the first source/drain feature, wherein the second source/drain feature has a substantially uniform thickness.

Abstract: Aryl-quinolin derivatives for use in inhibiting vasculogenic mimicry, treating diseases characterized by abnormal vascular morphology or function and/or by the presence of vasculogenic mimicry in a subject in need thereof are disclosed. In one embodiment of the invention, the compounds are for use in treating metastatic tumor, hyperproliferative, or angiogenic diseases. In another embodiment of the invention, the compound for use may combine an additional therapeutic agent such as anti-cancer agents, anti-inflammatory agents, anti-proliferative agents, anti-hormonal agents, or any combination thereof for use.

Abstract: A framework, which conforms to the OAuth standard, involves a generic OAuth authorization server that can be used by multiple resource servers in order to ensure that access to resources stored on those resource servers is limited to access to which the resource owner consents. Each resource server registers, with the OAuth authorization server, metadata for that resource server, indicating scopes that are recognized by the resource server. The OAuth authorization server refers to this metadata when requesting consent from a resource owner on behalf of a client application, so that the consent will be of an appropriate scope. The OAuth authorization server refers to this metadata when constructing an access token to provide to the client application for use in accessing the resources on the resource server. The OAuth authorization server uses this metadata to map issued access tokens to the scopes to which those access tokens grant access.

Abstract: A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure.

Abstract: A manufacturing method of a semiconductor structure provides a substrate. A well having a first conductive type and a well having a second conductive type are formed in the substrate, respectively. A body region is formed in the well having the second conductive type. A first doped region and a second doped region are formed in the well having the first conductive type and the body region respectively. The first and second doped regions have same polarities, and a dopant concentration of the second doped region is higher than that of the first doped region. A third doped region is formed in the well having the second conductive type and between the first and second doped regions. The third and first doped regions have reverse polarities. A first field plate is formed on a surface region between the second and third doped regions.

Abstract: A method includes providing a gate structure over a semiconductor substrate and forming a source/drain region associated with the gate structure by etching an opening in the semiconductor substrate, performing a first epitaxial growth process while an entirety of a sidewall of the opening is exposed to grow a first epitaxy material in the opening. The first epitaxial growth process is free of a first dopant impurity. A second epitaxial growth process is performed after first epitaxial growth process to grow a second epitaxy material on the first epitaxy material. The second epitaxy material has the first dopant impurity at a first concentration. Further, a third epitaxial growth process is performed after the second epitaxial growth process that includes introducing the first dopant impurity at a second concentration, the second concentration greater than the first concentration.

Abstract: The present invention provides a method for manufacturing a negative plate of a secondary battery, which includes the following steps: providing multiple sheets of functional graphene; compressing the functional graphene to form a graphene target; providing copper foil, and forming a microstructure on a surface of the copper foil, so as to strengthen attachment between a graphene layer and the copper foil; depositing the graphene target on the microstructure of the surface of the copper foil, to form the graphene layer; and repairing the graphene layer by using an excimer laser. The foregoing manufacturing method can greatly prolong a cycle life of the whole graphene cathode, and increase a reversible capacitance of a battery.

Abstract: An electronic eyeglass is disclosed. The electronic eyeglass includes a polarizing beam splitter (PBS) and an eyeglass frame. The eyeglass frame carries the PBS.

Abstract: Techniques for managing identities are provided. In some examples, identity management, authentication, authorization, and token exchange frameworks may be provided for use with mobile devices, mobile applications, cloud applications, and/or other web-based applications. For example a mobile client may request to perform one or more identity management operations associated with an account of a service provider. Based at least in part on the requested operation and/or the particular service provider, an application programming interface (API) may be utilized to generate and/or perform one or more instructions and/or method calls for managing identity information of the service provider.

Abstract: A head mounted display system comprises a lens set, an image capturing unit and a processing circuit. The lens set comprises a first liquid crystal panel and a second liquid crystal panel. The first liquid crystal panel comprises first liquid crystal blocks, and the second liquid crystal panel comprises second liquid crystal blocks. The image capturing unit captures front image data having a first dynamic range. The processing circuit performs tone mapping according to the front image data to generate mapping image data having a second dynamic range smaller than the first dynamic range. The processing circuit calculates regulated values according to the mapping image data. A driving circuit drives the first liquid crystal blocks and the second liquid crystal blocks according to the regulated values, respectively.

Abstract: The invention provides a see-through head-mounted display, including: an inner optical mechanism covered by a nontransparent housing having an opening and providing an image beam from the opening; and an outer optical mechanism including an outer polarizing beam splitter guiding the image beam from the opening and an environment beam to the same direction. The inner optical mechanism includes at least a mirror and a driving motor. The mirror reflects the image beam to make the image beam incident to the outer optical mechanism. The driving motor moves the mirror to vary the image distance from the mirror.

Abstract: A framework, which conforms to the OAuth standard, involves a generic OAuth authorization server that can be used by multiple resource servers in order to ensure that access to resources stored on those resource servers is limited to access to which the resource owner consents. Each resource server registers, with the OAuth authorization server, metadata for that resource server, indicating scopes that are recognized by the resource server. The OAuth authorization server refers to this metadata when requesting consent from a resource owner on behalf of a client application, so that the consent will be of an appropriate scope. The OAuth authorization server refers to this metadata when constructing an access token to provide to the client application for use in accessing the resources on the resource server. The OAuth authorization server uses this metadata to map issued access tokens to the scopes to which those access tokens grant access.

Abstract: Techniques are disclosed for sending, from an application executing on a device associated with a user, through a Representational State Transfer (REST)-based interface, to an authorization computer system, a request for permission to access a scope of information associated with the user. The techniques can further include, based on authentication of the user, receiving, at the device associated with the user, through the REST-based interface, a request for consent by the user to allow the application to access information that is within the scope of information associated with the user. Furthermore, the techniques can include, responsive to the device receiving consent from the user, sending, from the device associated with the user, through the REST-based interface, to the authorization computer system, the consent to allow the application to access the information for the authorization computer system to store a mapping between the application and the scope.

Abstract: An improved structure of backside copper metallization for semiconductor devices and a fabrication method thereof, wherein the improved structure comprises sequentially from top to bottom an active layer, a substrate, a backside metal seed layer, a high-temperature sustaining buffer layer, a backside metal layer and at least one oxidation resistant layer, wherein the backside metal seed layer contains Pd and P, the high-temperature sustaining buffer layer is made of Ni, Ag or Ni alloys, and the backside metal layer is made of Cu. The semiconductor chip using the structure provided by the present invention can sustain high-temperature operations.

Abstract: A semiconductor device includes a gate structure located on a substrate and a raised source/drain region adjacent to the gate structure. The raised source/drain region includes: a first epitaxial-grown doped layer of the raised source/drain region in contact with the substrate; a second epitaxial-grown doped layer on the first epitaxial-grown doped layer and including a same dopant species as the first epitaxial-grown doped layer, wherein the second epitaxial-grown doped layer includes a higher dopant concentration than the first epitaxial-grown doped layer and interfacing the gate structure by using a predetermined distance; and a third epitaxial-grown doped layer on the second epitaxial-grown doped layer and including the same dopant species as the first epitaxial-grown doped layer, wherein the third epitaxial-grown doped layer includes a higher dopant concentration than the second epitaxial-grown doped layer.

Abstract: A framework, which conforms to the OAuth standard, involves a generic OAuth authorization server that can be used by multiple resource servers in order to ensure that access to resources stored on those resource servers is limited to access to which the resource owner consents. Each resource server registers, with the OAuth authorization server, metadata for that resource server, indicating scopes that are recognized by the resource server. The OAuth authorization server refers to this metadata when requesting consent from a resource owner on behalf of a client application, so that the consent will be of an appropriate scope. The OAuth authorization server refers to this metadata when constructing an access token to provide to the client application for use in accessing the resources on the resource server. The OAuth authorization server uses this metadata to map issued access tokens to the scopes to which those access tokens grant access.

Abstract: Aryl-quinolin derivatives for use in inhibiting vasculogenic mimicry, treating diseases characterized by abnormal vascular morphology or function and/or by the presence of vasculogenic mimicry in a subject in need thereof are disclosed. In one embodiment of the invention, the compounds are for use in treating metastatic tumor, hyperproliferative, or angiogenic diseases, in another embodiment of the invention, the compound for use may combine an additional therapeutic agent such as anti-cancer agents, anti-inflammatory agents, anti-proliferative agents, anti-hormonal agents, or any combination thereof for use.