Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.

Abstract: A micro-electromechanical-system (MEMS) device may include a capacitive micromachined ultrasonic transducer (CMUT) that includes an actuation membrane and a sensing dielectric layer that are spaced apart by a cavity. The sensing dielectric layer may be formed such that the thickness of the sensing dielectric layer may extend the operational of the CMUT while enabling the CMUT to accommodate a sufficiently high direct current voltage bias for collapsed mode operation. In this way, the thickness of the sensing dielectric layer enables the CMUT to operate in the collapsed mode, which enables the CMUT to achieve greater sound pressure output relative to other operational modes and enables the frequency response of the CMUT to be adjustable, thereby enabling the frequency response to be optimized for specific use cases and applications.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

Abstract: A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.

Abstract: A bonding method and a bonding structure are provided. A device substrate is provided including a plurality of semiconductor devices, wherein each of the semiconductor devices includes a first bonding layer. A cap substrate is provided including a plurality of cap structures, wherein each of the cap structures includes a second bonding layer, the second bonding layer having a planar surface and a first protrusion protruding from the planar surface. The device substrate is bonded to the cap substrate by engaging the first protrusion of the second bonding layer of each of the cap structures with the corresponding first bonding layer of each of the semiconductor devices in the device substrate.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; and a cap structure attached to the buried oxide layer, the cap structure comprising a microneedle.

Abstract: A method and a system for detecting a semiconductor device are provided. The method comprises obtaining an image of the semiconductor device, evaluating a feature of the image, detecting a defect of the semiconductor device based on the feature, extracting a defect information for the defect, calculating a defect die ratio (DDR) in response to the defect and analyzing a relation between the DDR and the defect information.

Abstract: The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.

Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.

Abstract: A method of forming a transducer includes depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to form first protrusions and second protrusions, where a first diameter of each of the first protrusions is larger than a second diameter of each of the second protrusions; and bonding the first dielectric layer to a second electrode using a second dielectric layer, where sidewalls of the second dielectric layer define a cavity disposed between the first electrode and the second electrode, and where the first protrusions are disposed in the cavity.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. An upper dielectric structure overlies the interconnect structure. A microelectromechanical system (MEMS) substrate overlies the upper dielectric structure. A cavity is defined between the MEMS substrate and the upper dielectric structure. The MEMS substrate comprises a movable membrane over the cavity. A cavity electrode is disposed in the upper dielectric structure and underlies the cavity. A plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. A dielectric protection layer is disposed along a top surface of the cavity electrode. The dielectric protection layer has a greater dielectric constant than the upper dielectric structure.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity.

Abstract: A MEMS package is provided. The MEMS package includes a metallization layer, a planarization structure, a MEMS device structure, a cap structure and a pressure adjustment element. The planarization structure has an inner sidewall defining a first cavity exposing the metallization layer. The MEMS device structure is bonded to the planarization structure. The MEMS device structure includes a movable element over the first cavity. The cap structure is bonded to the MEMS device structure and has an inner sidewall defining a second cavity facing the movable element. The pressure adjustment element is disposed in the second cavity.