Patents by Inventor Wen-Chuan Tai

Wen-Chuan Tai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8716852
    Abstract: A device includes a capping substrate bonded with a substrate structure. The substrate structure includes an integrated circuit structure. The integrated circuit structure includes a top metallic layer disposed on an outgasing prevention structure. At least one micro-electro mechanical system (MEMS) device is disposed over the top metallic layer and the outgasing prevention structure.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: May 6, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Pao Shu, Chia-Ming Hung, Wen-Chuan Tai, Hung-Sen Wang, Hsiang-Fu Chen, Alex Kalnitsky
  • Patent number: 8647892
    Abstract: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: February 11, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Chih Liang, Wen-Chuan Tai, Chun-Ren Cheng
  • Publication number: 20140035072
    Abstract: A micro-electro-mechanical systems (MEMS) device and method for forming a MEMS device is provided. A proof mass is suspended a distance above a surface of a substrate by a fulcrum. A pair of sensing plates are positioned on the substrate on opposing sides of the fulcrum. Metal bumps are associated with each sensing plate and positioned near a respective distal end of the proof mass. Each metal bump extends from the surface of the substrate and generally inhibits charge-induced stiction associated with the proof mass. Oxide bumps are associated with each of the pair of sensing plates and positioned between the respective sensing plate and the fulcrum. Each oxide bump extends from the first surface of the substrate a greater distance than the metal bumps and acts as a shock absorber by preventing the distal ends of the proof mass from contacting the metal bumps during shock loading.
    Type: Application
    Filed: August 1, 2012
    Publication date: February 6, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Pao Shu, Wen-Chuan Tai, Chia-Ming Hung, Hsiang-Fu Chen
  • Publication number: 20130214400
    Abstract: A device includes a capping substrate bonded with a substrate structure. The substrate structure includes an integrated circuit structure. The integrated circuit structure includes a top metallic layer disposed on an outgasing prevention structure. At least one micro-electro mechanical system (MEMS) device is disposed over the top metallic layer and the outgasing prevention structure.
    Type: Application
    Filed: February 17, 2012
    Publication date: August 22, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Pao SHU, Chia-Ming HUNG, Wen-Chuan TAI, Hung-Sen WANG, Hsiang-Fu CHEN, Alex KALNITSKY
  • Patent number: 8410665
    Abstract: The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
    Type: Grant
    Filed: December 23, 2010
    Date of Patent: April 2, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tien-Kan Chung, Chung-Hsien Lin, Yao-Te Huang, Chia-Hua Chu, Chia-Ming Hung, Wen-Chuan Tai, Chang-Yi Yang
  • Publication number: 20130043510
    Abstract: The present disclosure provides one embodiment of a motion sensor structure. The motion sensor structure includes a first substrate having an integrated circuit formed thereon; a second substrate bonded to the first substrate from a first surface, wherein the second substrate includes a motion sensor formed thereon; and a third substrate bonded to a second surface of the second substrate, wherein the third substrate includes a recessed region aligned with the motion sensor.
    Type: Application
    Filed: March 29, 2012
    Publication date: February 21, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Pao Shu, Wen-Chuan Tai, Chia-Ming Hung, Hsiang-Fu Chen
  • Publication number: 20120235647
    Abstract: In some embodiments of the present disclosure, a sensor comprises a substrate, a sensor element and an energy-harvesting device. The sensor element comprises a plate, and the plate is moveable with respect to the substrate. The energy-harvesting device is formed on the plate of the sensor element.
    Type: Application
    Filed: March 14, 2011
    Publication date: September 20, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tien-Kan CHUNG, Wen-Chuan TAI, Yao-Te HUANG, Hsin-Ting HUANG, Shang-Ying TSAI, Chang-Yi YANG, Chia-Ming HUNG
  • Publication number: 20120223613
    Abstract: An apparatus including a bypass structure for complementary metal-oxide-semiconductor (CMOS) and/or microelectromechanical system (MEMS) devices, and method for fabricating such apparatus, is disclosed. An exemplary apparatus includes a first substrate; a second substrate that includes a MEMS device; an insulator disposed between the first substrate and the second substrate; and an electrical bypass structure disposed in the insulator layer that contacts a portion of the first substrate, wherein the electrical bypass structure is electrically isolated from the MEMS device in the second substrate and any device included in the first substrate.
    Type: Application
    Filed: August 1, 2011
    Publication date: September 6, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Ming Hung, Hung-Sen Wang, Hsiang-Fu Chen, Te-Hsi Lee, Alex Kalnitsky, Wen-Chuan Tai, Kuei-Sung Chang, Yi Heng Tsai
  • Publication number: 20120161582
    Abstract: The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.
    Type: Application
    Filed: December 23, 2010
    Publication date: June 28, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: TIEN-KAN CHUNG, Chung-Hsien Lin, Yao-Te Huang, Chia-Hua Chu, Chia-Ming Hung, Wen-Chuan Tai, Chang-Yi Yang
  • Publication number: 20120091454
    Abstract: A method for process control is disclosed. The method includes performing an etching process on a semiconductor substrate forming a structure and a test structure having a pattern and a releasing mechanism coupled to the pattern; and monitoring the pattern of the test structure to determine whether the etching process is complete.
    Type: Application
    Filed: October 19, 2010
    Publication date: April 19, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Chih Liang, Wen-Chuan Tai, Chun-Ren Cheng