Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.

Abstract: The present invention uses the thinned second pad oxide layer as the pad oxide layer for the subsequent shallow trench isolation process. Therefore, it is not necessary to remove the entire pad oxide layer on the substrate surface after the P-type high-voltage ion well thermal drive-in process. The subsequent step of re-growing the pad oxide layer is omitted, thereby simplifying the process complexity.

Abstract: An information handling system keyboard illuminates key values in each of plural keycaps with a backlight located below the plural keys and directed upward through the plural keys and having illumination that adjusts color temperature under management of a controller. A light sensor detects ambient light color temperature and communicates the ambient light color temperature to the controller, which executes instructions in non-transitory memory to adjust the backlight color illumination based on the detected ambient light color temperature to increase color contrast of backlight illumination relative to ambient light and thereby better highlight the key values on the keycap upper surfaces.

Abstract: An information handling system keyboard illuminates key values in each of plural keycaps with a backlight located below the plural keys and directed upward through the plural keys and having illumination that adjusts color temperature under management of a controller. A light sensor detects ambient light color temperature and communicates the ambient light color temperature to the controller, which executes instructions in non-transitory memory to adjust the backlight color illumination based on the detected ambient light color temperature to increase color contrast of backlight illumination relative to ambient light and thereby better highlight the key values on the keycap upper surfaces.

Abstract: A method is provided for supporting environmental control in a semiconductor wafer processing space, the method includes: flowing a first gas under pressure in a first direction through a first diffuser tube, thereby generating a first lateral flow of gas through a sidewall of the first diffuser tube; flowing a second gas under pressure in a second direction through a second diffuser tube, thereby generating a second lateral flow of gas through a sidewall of the second diffuser tube, the second direction being opposite the first direction; combining the first and second lateral flows of gas within a housing; and outputting the combined lateral flows of gas from the housing to produce a laminar gas flow covering an opening to the semiconductor wafer processing space.

Abstract: A semiconductor device and method of fabricating the same, the semiconductor device includes a substrate, a metal gate structure, at least one dummy body, two source/drain regions, and a dielectric layer. The metal gate structure is disposed on the substrate. The at least one dummy body is disposed within the metal gate structure. The source/drain regions are disposed at two sides of the metal gate structure respectively in the substrate. The dielectric layer is disposed on the substrate, around the metal gate structure.

Abstract: Various embodiments of the present disclosure are directed towards a shared frontside pad/bridge layout for a three-dimensional (3D) integrated circuit (IC), as well as the 3D IC and a method for forming the 3D IC. A second IC die underlies the first IC die, and a third IC die underlies the second IC die. A first-die backside pad, a second-die backside pad, and a third die backside pad are in a row extending in a dimension and overlie the first, second, and third IC dies. Further, the first-die, second-die, and third-die backside pads are electrically coupled respectively to individual semiconductor devices of the first, second, and third IC dies. The second and third IC dies include individual pad/bridge structures at top metal (TM) layers of corresponding interconnect structures. The pad/bridge structures share the shared frontside pad/bridge layout and provide lateral routing in the dimension for the aforementioned electrical coupling.

Abstract: A card edge connector includes: a connector base having a card slot and plural terminals; a latch located at one end of the connector base for locking a card; and a releasing member. The releasing member includes two levers and a moving member, the levers are connected with the connector base in a pivoting manner, a first end of the lever is connected with the latch and an opposite second end of the lever is coupled to the moving member, wherein when the card is inserted into the slot and presses against the moving member downwards, the moving member drives the second ends of the levers to move downward, resulting in the first ends moving upwards to push the latch to lock with the card, and when the card is pulled out the moving member resets and drives the levers to release the latch from the card.

Abstract: An electronic device is provided. The electronic device includes a frame, a working panel, a case, and an adhesive material. The frame includes a side wall and a back plate. The working panel is disposed on the back plate. The case is disposed on the frame and adjacent to the working panel. The adhesive material is disposed on the case. The side wall has an outer surface facing away from the working panel. In a cross-section view of the electronic device, a portion of the adhesive material is in contact with the outer surface of the side wall of the frame, and a length of the adhesive material is greater than or equal to 50% of a length of the side wall of the frame along an extension direction.

Abstract: The invention provides an etching method of a semiconductor structure, which comprises providing a substrate with a gate structure, an oxide layer and a first nitride layer beside the gate structure, and performing an etching step to remove the first nitride layer and keep the oxide layer, wherein in the etching step, the etching selectivity ratio of the etched nitride material to the etched oxide material is greater than 300.

Abstract: An E-paper display panel including an E-paper display layer, a first substrate, a pixel array layer, a common electrode layer, and a driving circuit is provided. The first substrate is disposed at a first side of the E-paper display layer. The pixel array substrate is disposed between the first substrate and the E-paper display layer and includes touch electrodes and driving pixels arranged in an array. Each driving pixel includes a first pixel electrode and a second pixel electrode. The touch electrodes, the first pixel electrode, and the second pixel electrode are overlapped with each other. The common electrode layer is disposed at a second side of the E-paper display layer. The first side is opposite to the second side. The driving circuit is in signal communication with the common electrode layer and the pixel array layer. The touch electrodes are individually in signal communication with the driving circuit.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a device layer, and a metallization structure. The substrate has a first surface. The device layer is over the first surface of the substrate. The device layer includes a plurality of passive component units. The metallization structure is over the device layer. The metallization structure includes a conductive bridge portion electrically connecting two adjacent passive component units.

Abstract: A resistive memory device includes a stacked structure and a copper via conductor structure. The stacked structure includes a first electrode, a second electrode, and a variable resistance layer. The second electrode is disposed above the first electrode in a vertical direction, and the variable resistance layer is disposed between the first electrode and the second electrode in the vertical direction. The copper via conductor structure is disposed under the stacked structure. The first electrode includes a tantalum nitride layer directly connected with the copper via conductor structure.

Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The lid comprises an annular lid base and a cover plate removably installed on the annular lid base. The semiconductor package can be uncovered by removing the cover plate and a forced cooling module can be installed in place of the cover plate.

Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.

Abstract: The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. A portion of the first feature extends over the spacer feature. The method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. Other methods and associated patterned semiconductor wafers are also provided herein.

Abstract: A semiconductor package includes a substrate having a top surface and a bottom surface; a semiconductor die mounted on the top surface of the substrate; and a two-part lid mounted on a perimeter of the top surface of the substrate and housing the semiconductor die. The lid comprises an annular lid base and a cover plate removably installed on the annular lid base. The semiconductor package can be uncovered by removing the cover plate and a forced cooling module can be installed in place of the cover plate.

Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.