Abstract: A method comprises directing an electron beam toward a sidewall of a three-dimensional region of a semiconductor device with a tilting angle and a first azimuth angle, detecting a first projection distance of the sidewall through a detector placed over the semiconductor device, directing the electron beam toward the sidewall with the tilting angle and a second azimuth angle, detecting a second projection distance of the sidewall, calculating a height of the three-dimensional region using a first function, wherein the first function includes the first tilting angle, the first azimuth angle, the second azimuth angle and the projection distance of the sidewall and calculating a sidewall edge of the three-dimensional region using a second function, wherein the second function includes the first azimuth angle, the second azimuth angle and the projection distance of the sidewall.

Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.

Abstract: A method comprises: (a) transforming a layout of a layer of an integrated circuit (IC) or micro electro-mechanical system (MEMS) to a curvilinear mask layout; (b) replacing at least one pattern of the curvilinear mask layout with a previously stored fracturing template having approximately the same shape as the pattern, to form a fractured IC or MEMS layout; and (c) storing, in a non-transitory storage medium, an e-beam generation file including a representation of the fractured IC or MEMS layout, to be used for fabricating a photomask.

Abstract: A hub device includes a first chip, a second chip and an external memory device. The first chip includes at least a first upstream port and multiple first downstream ports. The second chip includes at least a second upstream port and multiple second downstream ports. The external memory device stores firmware data corresponding to the first chip and the second chip. One of the first downstream ports of the first chip is coupled to the second upstream port of the second chip to form a tiered hub. The first chip and the second chip are sequentially enabled and the first chip and the second chip sequentially load the corresponding firmware data.

Abstract: A computer-implemented method for virally updating software in a networked computer including performing neighbor computer discovery using the networked computer to ascertain neighbor computers and ascertaining, using the networked computer, whether any of the neighbor computers possesses an update package configured for updating the software. If a neighbor computer of the neighbor computers possesses the update package, the method includes retrieving the update package to the networked computer and updating the software in the networked computer using the update package.

Abstract: A light-emitting diode chip includes a first electrode and a metal composite layer. The metal composite layer is disposed on the first electrode and has a nickel layer. Since the metal composite layer is disposed on the first electrode, the yield of the wedge bonding can be increased, and the chip damage can be avoided.

Abstract: A photomask and a method of making same. The photomask includes a plate defining transparent regions in a predetermined pattern and opaque regions, the transparent regions adapted to transmit light therethrough; and a contrast enhancement layer disposed over an entire surface of at least one of the transparent regions and the opaque regions.

Abstract: A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.

Abstract: A memory storage device and a read/write method thereof, first defining logically the flash memory as at least one particular data management area and at least one common data management area; next, determining the logical block address located in the particular data management area or the common data management area according to data transmitted to an external system by an area decision mechanism, wherein the method of writing to the particular data management area is by using a method of dynamic deviation value, and the method of writing to the common data management area is by using a method of same displacement value. Whereby, the particular data management area can be avoided moving frequently caused by updating data from the external system to improve read/write performance of the flash memory.

Abstract: A photomask and a method of making same. The photomask includes a plate defining transparent regions in a predetermined pattern and opaque regions, the transparent regions adapted to transmit light therethrough; and a contrast enhancement layer disposed over an entire surface of at least one of the transparent regions and the opaque regions.

Abstract: A method is described for repairing a defect detected in a photolithographic mask. A phase voxel cavity is formed in the photolithographic mask to compensate for the defect in the photolithographic mask. The phase voxel cavity and features of the mask both create a phase shift of approximately ?.

Abstract: A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.

Abstract: A memory storage device and a read/write method thereof, first defining logically the flash memory as at least one particular data management area and at least one common data management area; next, determining the logical block address located in the particular data management area or the common data management area according to data transmitted to an external system by an area decision mechanism, wherein the method of writing to the particular data management area is by using a method of dynamic deviation value, and the method of writing to the common data management area is by using a method of same displacement value. Whereby, the particular data management area can be avoided moving frequently caused by updating data from the external system to improve read/write performance of the flash memory.

Abstract: A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.

Abstract: A chromeless APSM structure may be used to enable the pitch of features on the mask to be decreased by removing the chrome line between features, and thus remove the limit based on the size of the chrome line. The chromeless APSM may include primary features surrounded by a boundary region including sub resolution features. A relatively high precision lithography tool may be used in a first lithography step to print the features in the chromeless APSM structure. The boundary region may allow for a less precise lithography tool to be used in a second lithography step.

Abstract: Embodiments of the invention provide methods and apparatuses for detecting defects and contaminants on reticles. For one embodiment of the invention, either one or both of an aerial image database and a resist image database are created and compared to an actual scanned mask die image. For one embodiment of the invention, the comparison is used to identify defects of contaminants on the reticle. For one embodiment of the invention, a decision as to whether the reticle should be discarded or cleaned and repaired is made based upon the determined defects or contaminants.

Abstract: A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.

Abstract: A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.

Abstract: A mask having a pattern to modify a circuitry feature that has been exposed in a radiation sensitive layer by transmitting modifying radiation to a region of the radiation sensitive layer containing the exposed circuitry feature is described. The mask may reduce subwavelength distortions and proximity effect distortions of the exposed circuitry feature. The mask may be used to manufacture a semiconductor device having circuitry that is based on the modified circuitry feature.

Abstract: A chromeless APSM structure may be used to enable the pitch of features on the mask to be decreased by removing the chrome line between features, and thus remove the limit based on the size of the chrome line. The chromeless APSM may include primary features surrounded by a boundary region including sub resolution features. A relatively high precision lithography tool may be used in a first lithography step to print the features in the chromeless APSM structure. The boundary region may allow for a less precise lithography tool to be used in a second lithography step.