Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

Abstract: A sputtering target structure includes a back plate characterized by a first size, and a plurality of sub-targets bonded to the back plate. Each of the sub-targets is characterized by a size that is a fraction of the first size and is equal to or less than a threshold target size. Each sub-target includes a ferromagnetic material containing iron (Fe) and boron (B). Each of the plurality of sub-targets is in direct contact with one or more adjacent sub-targets.

Abstract: A semiconductor device includes a device feature. The semiconductor device includes a first silicide layer having a first metal, wherein the first silicide layer is embedded in the device feature. The semiconductor device includes a second silicide layer having a second metal, wherein the second silicide layer, disposed above the device feature, comprises a first portion directly contacting the first silicide layer. The first metal is different from the second metal.

Abstract: A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

Abstract: A lithography exposure system includes a light source, a substrate stage, and a mask stage between the light source and the substrate stage along an optical path from the light source to the substrate stage. The lithography exposure system further comprises a reflector along the optical path. The reflector comprises: a first layer having a first material and a first thickness; a second layer having the first material and a second thickness different from the first thickness; and a third layer between the first layer and the second layer, and having a second material different from the first material.

Abstract: A lithography system includes a radiation source configured to generate a radiation, a reticle configured to redirect the radiation, a first type injection nozzle proximal to the reticle and configured to generate a first particle shield in a propagation path of the radiation, and a second type injection nozzle proximal to the radiation source and configured to generate a second particle shield in the propagation path of the radiation. The second type injection nozzle and the first type injection nozzle are of different types.

Abstract: An adaptor includes non-volatile memory that stores a scan engine. A removable storage device is connected to the adaptor, which in turn is connected to a host computer. Files being copied between the removable storage device and the host computer through the adaptor are scanned for malware using the scan engine.

Abstract: A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.

Abstract: The present disclosure provides a flexible workpiece pedestal capable of tilting a workpiece support surface. The workpiece pedestal further includes a heater mounted on the workpiece support surface. The heater includes a plurality of heating sources such as heating coils. The plurality of heating sources in the heater allows heating the workpiece at different temperatures for different zones of the workpiece. For example, the workpiece can have a central zone heated by a first heating coil, a first outer ring zone that is outside of the central zone heated by a second heating coil, a second outer ring zone that is outside of the first outer ring zone heated by a third heating coil. By using the tunable heating feature and the tilting feature of the workpiece pedestal, the present disclosure can reduce or eliminate the shadowing effect problem of the related workpiece pedestal in the art.

Abstract: A thin film deposition system deposits a thin film on a substrate in a thin film deposition chamber. The thin film deposition system deposits the thin film by flowing a fluid into the thin film deposition chamber. The thin film deposition system includes a byproducts sensor that senses byproducts of the fluid in an exhaust fluid. The thin film deposition system adjusts the flow rate of the fluid based on the byproducts.

Abstract: The present disclosure provides a multifunction chamber having a multifunctional shutter disk. The shutter disk includes a lamp device, a DC/RF power device, and a gas line on one surface of the shutter disk. With this configuration, simplifying the chamber type is possible as the various specific, dedicated chambers such as a degas chamber, a pre-clean chamber, a CVD/PVD chamber are not required. By using the multifunctional shutter disk, the degassing function and the pre-cleaning function are provided within a single chamber. Accordingly, a separate degas chamber and a pre-clean chamber are no longer required and the overall transfer time between chambers is reduced or eliminated.

Abstract: A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

Abstract: A semiconductor device manufacturing method including: simultaneously forming a plurality of conductive bumps respectively on a plurality of formation sites by adjusting a forming factor in accordance with an environmental density associated with each formation site; wherein the plurality of conductive bumps including an inter-bump height uniformity smaller than a value, and the environmental density is determined by a number of neighboring formation sites around each formation site in a predetermined range.

Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow and is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.

Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.

Abstract: A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.

Abstract: A lithography exposure system includes a light source, a substrate stage, and a mask stage between the light source and the substrate stage along an optical path from the light source to the substrate stage. The lithography exposure system further comprises a reflector along the optical path. The reflector comprises: a first layer having a first material and a first thickness; a second layer having the first material and a second thickness different from the first thickness; and a third layer between the first layer and the second layer, and having a second material different from the first material.