Abstract: A heat dissipation assembly is disclosed and includes a fan, a vapor chamber and a heat dissipation fin set. The fan includes a fan frame, an impeller and a fan cover. The impeller is disposed on the fan frame and accommodated in an accommodation space. The impeller includes plural metal blades and a hub, and the plural metal blades are radially arranged on the periphery of the hub to form a dense-metal-blade impeller. The fan cover is assembled with the fan frame to form an outlet, and the fan cover includes an inlet. The vapor chamber includes an upper plate and a lower plate assembled with each other. The upper plate or the lower plate is connected to the fan cover, and the vapor chamber and the fan cover are coplanar. The heat dissipation fin set is connected to the lower plate and spatially corresponding to the outlet.

Abstract: A device includes a first dielectric layer. A second dielectric layer is disposed over the first dielectric layer. The second dielectric layer and the first dielectric layer have different material compositions. A metal-insulator-metal (MIM) structure is embedded in the second dielectric layer. A third dielectric layer is disposed over the second dielectric layer. The third dielectric layer and the second dielectric layer have different material compositions. The first dielectric layer or the third dielectric layer may contain silicon nitride (SiN), the second dielectric layer may contain silicon oxide (SiO2).

Abstract: Interconnect structures exhibiting reduced accumulation of copper vacancies along interfaces between contact etch stop layers (CESLs) and interconnects, along with methods for fabrication, are disclosed herein. A method includes forming a copper interconnect in a dielectric layer and depositing a metal nitride CESL over the copper interconnect and the dielectric layer. An interface between the metal nitride CESL and the copper interconnect has a first surface nitrogen concentration, a first nitrogen concentration and/or a first number of nitrogen-nitrogen bonds. A nitrogen plasma treatment is performed to modify the interface between the metal nitride CESL and the copper interconnect.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.

Abstract: Packaged semiconductor devices are disclosed, comprising: a semiconductor die having a top major surface with a plurality of contact pads thereon, and four sides, wherein the sides are stepped such that a lower portion of each side extends laterally beyond a respective upper portion; encapsulating material encapsulating the top major surface and the upper portion of each of the sides wherein the semiconductor die is exposed at the lower portion of each of the sides; a contact-redistribution structure on the encapsulating material over the top major surface of the semiconductor die; a plurality of metallic studs extending through the encapsulating material, and providing electrical contact between the contact pads and the contact-redistribution structure. Corresponding methods are also disclosed.

Abstract: A method includes forming a first gate dielectric, a second gate dielectric, and a third gate dielectric over a first semiconductor region, a second semiconductor region, and a third semiconductor region, respectively. The method further includes depositing a first lanthanum-containing layer overlapping the first gate dielectric, and depositing a second lanthanum-containing layer overlapping the second gate dielectric. The second lanthanum-containing layer is thinner than the first lanthanum-containing layer. An anneal process is then performed to drive lanthanum in the first lanthanum-containing layer and the second lanthanum-containing layer into the first gate dielectric and the second gate dielectric, respectively. During the anneal process, the third gate dielectric is free from lanthanum-containing layers thereon.

Abstract: Interconnect structures exhibiting reduced accumulation of copper vacancies along interfaces between contact etch stop layers (CESLs) and interconnects, along with methods for fabrication, are disclosed herein. A method includes forming a copper interconnect in a dielectric layer and depositing a metal nitride CESL over the copper interconnect and the dielectric layer. An interface between the metal nitride CESL and the copper interconnect has a first surface nitrogen concentration, a first nitrogen concentration and/or a first number of nitrogen-nitrogen bonds. A nitrogen plasma treatment is performed to modify the interface between the metal nitride CESL and the copper interconnect.

Abstract: A method of predicting a brain atrophy condition for an individual using the individual's predicted age difference (PAD). The method comprises acquiring at least one brain image of the individual; processing the brain image to obtain at least one feature of the brain image; generating a PAD value of the individual based on the at least one feature of the image; and determining a brain atrophy condition of the individual based on the PAD value.

Abstract: A leadless semiconductor package includes an integrated circuit (IC) die having one or more contacts at an active surface facing a mounting surface of the leadless semiconductor package. The leadless semiconductor package further includes a plurality of dual-sided stud structures providing electrical connectivity between the IC die and the mounting surface, each dual-sided stud structure having at least one first conductive pillar structure extending from a corresponding contact at the active surface to a redistribution layer and having at least one second conductive pillar structure extending from a redistribution layer to an edge of the mounting surface, each first conductive pillar structure having a first dimension in a direction parallel to the mounting surface that is less than a corresponding second dimension of each second conductive pillar structure. Solder wettable flanks may be formed at the external sidewall edges of the second conductive pillar structures to facilitate soldering or inspection.

Abstract: A position-adjustable probing device comprises a stationary probe comprising a first coaxial structure having a first needle core, a first dielectric layer, and a first exterior conductive layer, and a first and a second movable probes. The first movable probe arranged at a first side of the stationary probe comprises a ground needle core, and a first extending structure comprising a first planar structure electrically contacted with the stationary probe through a first movement, a first top surface and a first bottom surface. The second movable probe arranged at a second side of the stationary needle comprises a second coaxial structure comprising a second needle core, a second dielectric layer, and a second exterior conductive layer, and a second extending structure comprising a second planar structure electrically contacted with the stationary probe through a second movement, a second top surface, and a second bottom surface.

Abstract: A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.

Abstract: An artificial leather and a method for manufacturing the artificial leather are provided. The artificial leather includes a fabric layer, a thermoplastic polyolefin layer, a modified thermoplastic polyolefin layer, and a polyurethane surface layer. The thermoplastic polyolefin layer is disposed on the fabric layer. The modified thermoplastic polyolefin layer is disposed on the thermoplastic polyolefin layer. The polyurethane surface layer is attached to the modified thermoplastic polyolefin layer through an adhesive.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first hard mask on the second barrier layer, removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: The current disclosure describes techniques for individually selecting the number of channel strips for a device. The channel strips are selected by defining a three-dimensional active region that include a surface active area and a depth/height. Semiconductor strips in the active region are selected as channel strips. Semiconductor strips contained in the active region will be configured to be channel strips. Semiconductor strips not included in the active region are not selected as channel strips and are separated from source/drain structures by an auxiliary buffer layer.

Abstract: Packaged semiconductor devices are disclosed, comprising: a semiconductor die having a top major surface with a plurality of contact pads thereon, and four sides, wherein the sides are stepped such that a lower portion of each side extends laterally beyond a respective upper portion; encapsulating material encapsulating the top major surface and the upper portion of each of the sides wherein the semiconductor die is exposed at the lower portion of each of the sides; a contact-redistribution structure on the encapsulating material over the top major surface of the semiconductor die; a plurality of metallic studs extending through the encapsulating material, and providing electrical contact between the contact pads and the contact-redistribution structure. Corresponding methods are also disclosed.

Abstract: This disclosure relates to a superlattice structure, an LED epitaxial structure, a display device, and a method for manufacturing the LED epitaxial structure. The superlattice structure includes at least two superlattice units which are grown in stacking layers. Each of the at least two superlattice units includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer which are grown in stacking layers. The first n-type GaN layer has a doping concentration which is constant along a growth direction, the second n-type GaN layer has a doping concentration which gradually increases along the growth direction, the first n-type GaInN layer has a doping concentration which gradually decreases along the growth direction, and the second n-type GaInN layer has a doping concentration which is constant along the growth direction.

Abstract: A semiconductor device includes a first transistor located in a first region of a substrate and a second transistor located in a second region of the substrate. The first transistor includes first channel members vertically stacked above the substrate and a first gate structure wrapping around each of the first channel members. The first gate structure includes a first interfacial layer. The second transistor includes second channel members vertically stacked above the substrate and a second gate structure wrapping around each of the second channel members. The second gate structure includes a second interfacial layer. The second interfacial layer has a first sub-layer and a second sub-layer over the first sub-layer. The first and second sub-layers include different material compositions. A total thickness of the first and second sub-layers is larger than a thickness of the first interfacial layer.

Abstract: The present invention discloses a shell of an electronic device and an electronic device. The shell includes a shell body, a matching member, and a fixing member. The shell body is provided with a concave groove and a first through hole communicated with the concave groove. The matching member is arranged on the shell body and provided with a second through hole corresponding to the first through hole. The fixing member penetrates through the second through hole and the first through hole to fix the matching member to the shell body, and the fixing member passes through the concave groove and forms a lanyard hole with a side wall of the concave groove.

Abstract: A semiconductor substrate structure and a method of manufacturing a semiconductor substrate structure are provided. The semiconductor substrate structure includes a substrate, an electronic device, and a filling material. The substrate defines a cavity. The electronic device is disposed in the cavity and spaced apart from the substrate by a gap. The filling material is disposed in the gap and covers a first region of an upper surface of the electronic device.

Abstract: An apparatus and method for providing a decision feedback equalizer are disclosed herein. In some embodiments, a method and apparatus for reduction of inter-symbol interference (ISI) caused by communication channel impairments is disclosed. In some embodiments, a decision feedback equalizer includes a plurality of delay latches connected in series, a slicer circuit configured to receive an input signal from a communication channel and delayed feedback signals from the plurality of delay latches and determine a logical state of the received input signal, wherein the slicer circuit further comprises a dynamic threshold voltage calibration circuit configured to regulate a current flow between output nodes of the slicer circuit and ground based on the received delayed feedback signal and impulse response coefficients of the communication channel.