Patents by Inventor Wen-Hung Huang

Wen-Hung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194620
    Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.
    Type: Application
    Filed: February 20, 2024
    Publication date: June 13, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventor: Wen Hung HUANG
  • Publication number: 20240195083
    Abstract: An antenna module including a first radiator and a second radiator is provided. The first radiator includes a first segment to a fifth segment connected in sequence. A first slot is formed between the second segment and the fourth segment. The second radiator has an edge. A first retracting distance is between the second segment and an extension line. A second retracting distance is between the fourth segment and the extension line. The first segment resonates at a first high frequency band. The first radiator and the first slot resonate at a low frequency band and a second high frequency band. The first retracting distance, the second retracting distance, the second segment, the fourth segment, the fifth segment and the first slot resonate at a third high frequency band. The first segment and the second radiator resonate at a fourth high frequency band. In addition, an electronic device is provided.
    Type: Application
    Filed: October 17, 2023
    Publication date: June 13, 2024
    Applicant: PEGATRON CORPORATION
    Inventors: Chien-Yi Wu, Chao-Hsu Wu, Shih-Keng Huang, Hau Yuen Tan, Chih-Wei Liao, Chia-Hung Chen, Wen-Hgin Chuang, Chia-Hong Chen, Lin-Hsu Chiang, Hsi Yung Chen
  • Publication number: 20240194486
    Abstract: A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.
    Type: Application
    Filed: February 19, 2024
    Publication date: June 13, 2024
    Inventors: Kuan-Hsiang Mao, Wen Hung Huang, Che Ming Fang, Yufu Liu
  • Patent number: 12009400
    Abstract: A method includes forming a dielectric layer on a semiconductor workpiece, forming a first patterned layer of a first dipole material on the dielectric layer, and performing a first thermal drive-in operation at a first temperature to form a diffusion feature in a first portion of the dielectric layer beneath the first patterned layer. The method also includes forming a second patterned layer of a second dipole material, where a first section of the second patterned layer is on the diffusion feature and a second section of the second patterned layer is offset from the diffusion feature. The method further includes performing a second thermal drive-in operation at a second temperature, where the second temperature is less than the first temperature. The method additionally includes forming a gate electrode layer on the dielectric layer.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Hsiang Chan, Shan-Mei Liao, Wen-Hung Huang, Jian-Hao Chen, Kuo-Feng Yu, Mei-Yun Wang
  • Patent number: 12005091
    Abstract: The present invention discloses a method for maintaining or improving gastrointestinal condition, which includes: administering a lactic acid bacterial composition to a subject in need thereof, wherein the lactic acid bacterial composition comprises: a Lactobacillus paracasei ET-66 strain with a deposition number CGMCC 13514. The present invention also discloses a method for maintaining or improving gastrointestinal condition, which includes: administering a lactic acid bacterial fermentation composition to a subject in need thereof, wherein the lactic acid bacterial fermentation composition comprises: a fermentation product of a Lactobacillus paracasei ET-66 strain.
    Type: Grant
    Filed: April 22, 2022
    Date of Patent: June 11, 2024
    Assignee: GLAC BIOTECH CO., LTD
    Inventors: Hsieh-Hsun Ho, Wen-Yang Lin, Jui-Fen Chen, Yi-Wei Kuo, Jia-Hung Lin, Chi-Huei Lin, Ching-Wei Chen, Yu-Fen Huang
  • Publication number: 20240186188
    Abstract: A semiconductor device includes a first semiconductor layer below a second semiconductor layer; first and second gate dielectric layers surrounding the first and the second semiconductor layers, respectively; and a gate electrode surrounding both the first and the second gate dielectric layers. The first gate dielectric layer has a first top section above the first semiconductor layer and a first bottom section below the first semiconductor layer. The second gate dielectric layer has a second top section above the second semiconductor layer and a second bottom section below the second semiconductor layer. The first top section has a first thickness. The second top section has a second thickness. The second thickness is greater than the first thickness.
    Type: Application
    Filed: February 14, 2024
    Publication date: June 6, 2024
    Inventors: Yung-Hsiang CHAN, Wen-Hung HUANG, Shan-Mei LIAO, Jian-Hao CHEN, Kuo-Feng YU, Kuei-Lun LIN
  • Publication number: 20240186301
    Abstract: An electronic device package and method of fabricating such a package includes a first and second components encapsulated in a volume of molding material. A surface of the first component is bonded to a surface of the second component. Upper and lower sets of redistribution lowers that include, respectively, first and second sets of conductive interconnects are formed on opposite sides of the molding material. A through-package interconnect passes through the volume of molding material and has ends that terminate, respectively, within the upper set of redistribution layers and within the lower set of redistribution layers.
    Type: Application
    Filed: December 6, 2022
    Publication date: June 6, 2024
    Inventors: Scott M. Hayes, Wen Hung Huang, Michael B. Vincent, Antonius Hendrikus Jozef Kamphuis, Zhiwei Gong, Leo van Gemert
  • Publication number: 20240186303
    Abstract: A package is formed that encapsulates first and second components having respective first and second thickness differing from each other. Each component has lower surface provided with electrical contact pads and an upper surface opposite the lower surface. A volume of molding material encapsulates the first component. The package includes a set redistribution layers including a set of electrically-conductive interconnects surrounded by electrically-insulating material. The redistribution layers are disposed above the upper surface of the first component. The package includes one or more electrically conductive interconnects that pass through the redistribution layers to the lower surface of the first component; The second component is disposes at a location adjacent to the first component. A first portion of the second component is surrounded by the volume of molding material and a second portion of the second component is surrounded by one or more of the redistribution layers.
    Type: Application
    Filed: December 6, 2022
    Publication date: June 6, 2024
    Inventors: Zhiwei Gong, Scott M Hayes, Michael B. Vincent, Leo van Gemert, Antonius Hendrikus Jozef Kamphuis, Wen Hung Huang
  • Publication number: 20240136423
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 25, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240128353
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Patent number: 11961799
    Abstract: A semiconductor substrate structure and a method of manufacturing a semiconductor substrate structure are provided. The semiconductor substrate structure includes a substrate, an electronic device, and a filling material. The substrate defines a cavity. The electronic device is disposed in the cavity and spaced apart from the substrate by a gap. The filling material is disposed in the gap and covers a first region of an upper surface of the electronic device.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: April 16, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventor: Wen Hung Huang
  • Patent number: 11957722
    Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: April 16, 2024
    Assignee: GLAC BIOTECH CO., LTD
    Inventors: Hsieh-Hsun Ho, Yi-Wei Kuo, Wen-Yang Lin, Jia-Hung Lin, Yen-Yu Huang, Chi-Huei Lin, Shin-Yu Tsai
  • Publication number: 20240106086
    Abstract: An electrically conductive structure of lithium battery mainly comprises a housing, a lithium-battery-core, a cover plate, a first-metal-plate and a second-metal-plate.
    Type: Application
    Filed: September 28, 2022
    Publication date: March 28, 2024
    Inventor: Wen-Hung HUANG
  • Publication number: 20240105659
    Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over a semiconductor die. A portion of the RDL contacts a die pad of the semiconductor die. A metal layer is formed on a top surface and sidewalls of the RDL and configured to encase the RDL. A non-conductive layer is formed over the metal layer and underlying RDL. An opening in the non-conductive layer is formed exposing a portion of the metal layer formed on the RDL. An under-bump metallization (UBM) is formed in the opening and conductively connected to the die pad by way of the metal layer and RDL.
    Type: Application
    Filed: September 28, 2022
    Publication date: March 28, 2024
    Inventors: Kuan-Hsiang Mao, Yufu Liu, Wen Hung Huang, Tsung Nan Lo
  • Publication number: 20240096861
    Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes first semiconductor die, a second semiconductor die and a memory package. The first semiconductor die and the second semiconductor die are stacked on each other. The first semiconductor die includes a first interface and a third interface. The first interface overlaps and is electrically connected to the second interface arranged on the second semiconductor die. The third interface is arranged on a first edge of the first semiconductor die. The memory package is disposed beside the first semiconductor die, wherein the memory package is electrically connected to the first semiconductor die by the third interface.
    Type: Application
    Filed: August 23, 2023
    Publication date: March 21, 2024
    Inventors: Che-Hung KUO, Hsiao-Yun CHEN, Wen-Pin CHU, Chun-Hsiang HUANG
  • Patent number: 11931456
    Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.
    Type: Grant
    Filed: November 16, 2022
    Date of Patent: March 19, 2024
    Assignee: MegaPro Biomedical Co. Ltd.
    Inventors: Ming-Cheng Wei, Yuan-Hung Hsu, Wen-Yuan Hsieh, Chia-Wen Huang, Chih-Lung Chen, Jhih-Yun Jian, Shian-Jy Wang
  • Patent number: 11935753
    Abstract: A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: March 19, 2024
    Assignee: NXP B.V
    Inventors: Kuan-Hsiang Mao, Wen Hung Huang, Che Ming Fang, Yufu Liu
  • Publication number: 20240088068
    Abstract: A method of forming a semiconductor device is provided. The method includes encapsulating with an encapsulant at least a portion of a semiconductor die and a package substrate, the encapsulant including an additive selectively activated by way of a laser. A first opening is formed in the encapsulant, the first opening exposing a predetermined first portion of the package substrate. The additive is activated at the sidewalls of the first opening. A second opening is formed in the encapsulant, the second opening encircling the first opening and exposing a predetermined second portion of the package substrate. The additive is activated at the sidewalls the second opening. A conductive material is plated on the additive activated portions of the encapsulant.
    Type: Application
    Filed: September 8, 2022
    Publication date: March 14, 2024
    Inventors: Michael B. Vincent, Scott M. Hayes, Zhiwei Gong, Leo van Gemert, Antonius Hendrikus Jozef Kamphuis, Wen Hung Huang
  • Publication number: 20240079263
    Abstract: A wafer container includes a frame, a door and at least a pair of shelves. The frame has opposite sidewalls. The pair of the shelves are respectively disposed and aligned on the opposite sidewalls of the frame. Various methods and devices are provided for holding at least one wafer to the shelves during transport.
    Type: Application
    Filed: February 22, 2023
    Publication date: March 7, 2024
    Inventors: Kai-Hung HSIAO, Chi-Chung JEN, Yu-Chun SHEN, Yuan-Cheng KUO, Chih-Hsiung HUANG, Wen-Chih CHIANG
  • Patent number: D1027976
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: May 21, 2024
    Assignee: VIVOTEK INC.
    Inventors: Kuan-Hung Chen, Kai-Sheng Chuang, Chia-Chi Chang, Yu-Fang Huang, Kai-Ting Yu, Wen-Chun Chen, Shu-Jung Hsu, Tsao-Wei Hung