Abstract: A semiconductor device includes a first transistor located in a first region and a second transistor located in a second region. The first transistor includes first and second channel members vertically stacked above the substrate, and a first gate dielectric layer having a first portion wrapping around the first channel member and a second portion wrapping around the second channel member. The second transistor includes third and fourth channel member vertically stacked above the substrate and a second gate dielectric layer having a first portion wrapping around the third channel member and a second portion wrapping around the fourth channel member. The first and second channel members are thicker than the third and fourth channel members. A vertical distance between the first and second portions of the first gate dielectric layer is larger than a vertical distance between the first and second portions of the second gate dielectric layer.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.

Abstract: A secure boot device includes a counter, a storage device and a comparator. The counter receives a clock. When the processor performs a verification of a firmware for the first time, the counter counts a first verification time taken by the processor to perform the verification of the firmware for the first time based on the clock to generate a first-time verification count value. When the processor performs the verification of the firmware for the non-first time, the counter counts a second verification time taken by the processor to perform the verification of the firmware at least once for the non-first time based on the clock to generate a count value. The storage device stores the first-time verification count value. The comparator is electrically connected to the counter and the storage device. When the processor performs the verification of the firmware for the non-first time, the comparator compares the count value with the first-time verification count value, and generates a comparison result.

Abstract: An n-type field effect transistor includes semiconductor channel members vertically stacked over a substrate, a gate dielectric layer wrapping around each of the semiconductor channel members, and a work function layer disposed over the gate dielectric layer. The work function layer wraps around each of the semiconductor channel members. The n-type field effect transistor also includes a WF isolation layer disposed over the WF layer and a gate metal fill layer disposed over the WF isolation layer. The WF isolation layer fills gaps between adjacent semiconductor channel members.

Abstract: A method of forming a semiconductor device with an embedded die is provided. The method includes forming a plurality of redistribution traces at a first major side of a package substrate. A cavity is formed in the package substrate. The plurality of redistribution traces substantially surrounding an opening of the cavity at the first major side. A semiconductor die is mounted in the cavity. A wire bond is formed between a bond pad of the semiconductor die and a wiring pad of a redistribution trace of the plurality of redistribution traces. An encapsulant encapsulates the semiconductor die and the first major side of the package substrate. A base region of the redistribution trace is exposed.

Abstract: A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.

Abstract: A conductive structure includes a core portion, a plurality of electronic devices and a filling material. The core portion defines a cavity. The electronic devices are disposed in the cavity of the core portion. The filling material is disposed between the electronic devices and a sidewall of the cavity of the core portion.

Abstract: A semiconductor substrate structure and a method of manufacturing a semiconductor substrate structure are provided. The semiconductor substrate structure includes a substrate, an electronic device, and a filling material. The substrate defines a cavity. The electronic device is disposed in the cavity and spaced apart from the substrate by a gap. The filling material is disposed in the gap and covers a first region of an upper surface of the electronic device.

Abstract: A semiconductor device includes a first semiconductor layer below a second semiconductor layer; first and second gate dielectric layers surrounding the first and the second semiconductor layers, respectively; and a gate electrode surrounding both the first and the second gate dielectric layers. The first gate dielectric layer has a first top section above the first semiconductor layer and a first bottom section below the first semiconductor layer. The second gate dielectric layer has a second top section above the second semiconductor layer and a second bottom section below the second semiconductor layer. The first top section has a first thickness. The second top section has a second thickness. The second thickness is greater than the first thickness.

Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

Abstract: Semiconductor packages with embedded wiring on re-distributed bumps are described. In an illustrative, non-limiting embodiment, a semiconductor package may include an integrated circuit (IC) having a plurality of pads and a re-distribution layer (RDL) coupled to the IC without any substrate or lead frame therebetween, where the RDL comprises a plurality of terminals, and where one or more of the plurality of pads are wire bonded to a corresponding one or more of the plurality of terminals.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a first non-conductive layer over a top side a semiconductor die and patterning the first non-conductive layer to form an opening exposing a top surface of a bond of the semiconductor die. A metal trace of a redistribution layer is formed over a portion of the first non-conductive layer and exposed top surface of the bond pad. A surrounding bump metallization (SBM) structure is formed on a portion of the metal trace. The SBM structure includes a plurality of vertical metal wall segments surrounding a central opening.

Abstract: A semiconductor device includes a first transistor located in a first region of a substrate and a second transistor located in a second region of the substrate. The first transistor includes first channel members vertically stacked above the substrate and a first gate structure wrapping around each of the first channel members. The first gate structure includes a first interfacial layer. The second transistor includes second channel members vertically stacked above the substrate and a second gate structure wrapping around each of the second channel members. The second gate structure includes a second interfacial layer. The second interfacial layer has a first sub-layer and a second sub-layer over the first sub-layer. The first and second sub-layers include different material compositions. A total thickness of the first and second sub-layers is larger than a thickness of the first interfacial layer.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.

Abstract: A method of forming a semiconductor device is provided. The method includes forming a redistribution layer (RDL) substrate over an active side of a semiconductor die. The RDL substrate includes a plurality of under-bump metallization (UBM) structures. A die pad of a leadframe is affixed on a backside of the semiconductor die. The leadframe includes a plurality of leads having a first portion of each lead connected to the die pad and a second portion of each lead extending vertically along sidewalls of the semiconductor die toward a plane of the RDL substrate. An encapsulant encapsulates the semiconductor die and the leadframe, a lead tip portion of each lead is exposed through the encapsulant.

Abstract: A teleconferencing system includes a system housing, a speaker enclosure configured within the system housing, a speaker mounted to the speaker enclosure, and one or more damping elements coupling the speaker enclosure to the system housing. The one or more damping elements suspend the speaker enclosure within the system housing such that the speaker enclosure is isolated and separated from the system. In some cases, the one or more damping elements provide the only structural coupling between the speaker enclosure and the system housing. The damping elements are laterally attached directly to the speaker housing with a resilient element.

Abstract: A method for manufacturing a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices. Each integrated circuit device extends into the semiconductor wafer to a first depth. Prior to singulation of the integrated circuit devices on the semiconductor wafer, the method further includes forming a cut between the integrated circuit devices. The cut extends to at least the first depth, but does not extend completely through the semiconductor wafer. The cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on each integrated circuit device, a passivation layer on a top surface and on the edges.

Abstract: A semiconductor device and a method for operating the semiconductor device are provided. The semiconductor device includes a calibration device, an adjustment device and a driver. The calibration device is configured to continuously generate a first signal including a first number of bits. The adjustment device is configured to continuously receive the first signal and generate a second signal according to the last two bits of the first signal The second signal includes a second number of bits, and the second number is different from the first number. The driver is electrically coupled to the adjustment device, wherein an output resistance of the driver is controllable in response to the second signal.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.

Abstract: A method includes forming a first gate dielectric, a second gate dielectric, and a third gate dielectric over a first semiconductor region, a second semiconductor region, and a third semiconductor region, respectively. The method further includes depositing a first lanthanum-containing layer overlapping the first gate dielectric, and depositing a second lanthanum-containing layer overlapping the second gate dielectric. The second lanthanum-containing layer is thinner than the first lanthanum-containing layer. An anneal process is then performed to drive lanthanum in the first lanthanum-containing layer and the second lanthanum-containing layer into the first gate dielectric and the second gate dielectric, respectively. During the anneal process, the third gate dielectric is free from lanthanum-containing layers thereon.