Abstract: A grit blasting and alkaline etch surface pretreatment that is applied to a metallic airfoil. The metallic airfoil includes pockets or cavities that have been fabricated into the airfoil to reduce the weight of the airfoil. The pretreatment includes grit blasting the surface of the pockets or cavities, followed by washing the airfoil and treating the airfoil in an alkaline etch bath. After any remaining solution from the bath is neutralized and within twenty-four hours of the end of the pretreatment, primer is applied to the surface of the pockets or cavities. After the primer is applied to the surface of the pockets, a lightweight resin is injected into the pockets and bonds to the primer forming a mechanical bond with good fracture toughness at elevated temperatures.

Abstract: This invention provides cycloaliphatic polyimide having the following formula (I): wherein 1 and n are integers from 4 to 7; m is an integer from 0 to 2; p is an integer from 1 to 8; polycyclic aliphatic compound R reprents C1-8 cycloalkyl, cycloalkenyl, cycloalkynyl, norbornenyl, decalinyl, adamantanyl, or cubanyl. That cycloaliphatic polyimide can be a through transparent film, their thermal stability is over 430° C. and dielectric constant is about 2.7.

Abstract: A system and method for offering a service upgrade to a service user. The system includes a server that monitors utilization by the user and evaluates the user's utilization pattern to determine which, if any, service upgrades may be appropriate for the user. Once a set of candidate service upgrades has been identified, the server then determines whether there is sufficient available capacity to accommodate the provision of such additional services. If such capacity exists, the user is offered the service upgrade. Since the offer is not made unless there is shown to be sufficient available capacity, once the offer is made, the system is able to implement the upgrade in real time with the user's approval.

Abstract: This invention provides cycloaliphatic polyimide having the following formula (I): 1

Abstract: A fan blade includes a metal airfoil having a pocket disposed in a first side thereof, with the pocket including a filler bonded thereto. The pocket includes a plurality of cells separated by corresponding ribs which are submerged in the filler.

Abstract: The present invention discloses a resin composition reclaimed from compact disk waste having improved mechanical characteristics. The resin composition in accordance with the present invention comprises (a) compact disk waste comprising polycarbonate (PC) as a primary component; and (b) a coupling agent containing two or more reactive functional groups. Optionally, the resin composition of the present invention may further comprise (c) an impact-resistant thermoplastic resin, engineering plastic grade PC or waste thereof, or recycled bottle grade PC.

Abstract: A steam turbine blade, such as those used in an electric power generation steam turbine, has an airfoil portion. The airfoil portion includes a metallic section consisting essentially of metal and at least one (lightweight) panel section not consisting essentially of metal. The metallic section extends from generally the blade root to generally the blade tip. Each panel section is an elastomeric section. The metallic section and the at-least-one panel section only together define a generally airfoil shape.

Abstract: A semiconductor device (120) is formed in a silicon-on-insulator (SOI) substrate (135). The semiconductor device (120) has a channel region (126) that is controlled by a gate structure (129). The channel region (126) has a doping profile that is essentially uniform where the channel region (126) is under the gate structure (129). This eliminates the parasitic channel region that is common with conventional field effect transistors (FETs) that are formed in SOI substrates. Consequently, the semiconductor device (120) of the present invention does not suffer from the "kink" problem that is common to conventional FET devices.

Abstract: A lightweight, impact-resistant gas turbine blade, such as an aircraft engine fan blade, has an airfoil portion. The airfoil portion includes a metallic section consisting essentially of metal and at least one panel section not consisting essentially of metal. The metallic section extends from generally the blade root to generally the blade tip. Each panel section is an elastomeric section. Preferably, the metallic section and the at-least-one panel section only together define a generally airfoil shape.

Abstract: A semiconductor on insulator structure (50) includes a silicon layer (30) formed on an insulating substrate (20). The silicon layer (30) is partitioned into two sections (32, 34) which are electrically isolated from each other. The thickness of the silicon layer (30) in a first section (32) of the silicon layer (30) is adjusted independently from the thickness of the silicon layer (30) in a second section (34) of the silicon layer (30). Independently adjusting the thickness of the silicon layer (30) allows optimizing the performance of semiconductor devices (60, 80) fabricated in the first and second sections (32, 34) of the semiconductor on insulator structure (50).

Abstract: A method of forming an isolation oxide (30) on a silicon-on-insulator (SOI) substrate (21) includes disposing a mask layer (26, 27) over a region of a silicon layer (24) of the SOI substrate (21). The isolation oxide (30) is grown in a different region (28) of the silicon layer (24). The isolation oxide (30) is grown to a depth (32) within the silicon layer (24) of less than or equal to a thickness (29) of the silicon layer (24). After removing the mask layer (26, 27), the isolation oxide (30) is further grown in the different region (28) of the silicon layer (24) such that the isolation oxide (30) is coupled to a buried electrically insulating layer (23) within the SOI substrate (21). The buried electrically insulating layer (23) and the isolation oxide (30) electrically isolate an active region (43) of a semiconductor device (20).

Abstract: A lightweight, impact-resistant gas turbine blade, such as an aircraft engine fan blade, has an airfoil portion which includes a metal section and at least one foam section which together define a generally airfoil shape. The metal section extends from generally the blade root to generally the blade tip. A composite skin generally completely surrounds, and is bonded to, the metal section and the at-least-one foam section. Preferably, an erosion coating generally completely surrounds, and is bonded to, the composite skin.

Abstract: A two stage threshold adjust implantation process is performed after field oxidation to avoid the effects of dopant redistribution and segregation. At any of several steps in a manufacturing process, only routine implant energy and dose adjustments are required to create a first and a second dopant profile (110, 120) that result in the reduction of edge leakage and threshold voltage sensitivity to device layer thickness of a semiconductor device on a semiconductor on insulator substrate.

Abstract: A silicon-on-insulator semiconductor device (40) having laterally-graded channel regions (23A, 24A) and a method of making the silicon-on-insulator semiconductor device (40). The silicon-on-insulator semiconductor device (40) has a gate structure (16) having sidewalls (19, 21) on a semiconductor layer (12). Lightly doped regions (26A, 27A) extend through an entire thickness of a portion of the semiconductor layer (12) under the sidewalls (19, 21). A laterally-graded channel region (23A) is formed below the gate structure (16) and abutting one (26A) of the lightly doped regions. A source (33) is formed in a first (26A) of the lightly doped regions and a drain region (34) is formed in a second (27A) of the lightly doped regions.

Abstract: A lamp bulb socket include a socket body having a bore to receive therein the base of a lamp bulb. An inner threading is provided on a surface of the bore which is defined by a helical slot surrounding the bore intervened with a helical rib. A chamber is provided in the socket body to be in communication with the bore through access openings defined by portions of helical slot. A cylindrical neutral contact member is received within the chamber to be contactable by the base of the bulb through the access openings. The neutral contact member is retained within the chamber by portions of the helical rib that are intervened between the access openings. The socket body has a central through hole formed on the bottom thereof to receive therein a cylindrical hot contact member with an inner end of the hot contact member exposed within the bore.

Abstract: A semiconductor-on-insulator transistor (10) has a channel region (30) in a semiconductor film (16) under a gate insulating layer (26). The channel region has a top dopant concentration N.sub.T at a top surface (32) of the film that is significantly greater than a bottom dopant concentration N.sub.B at a bottom surface (34) of the film. This non-uniform doping profile provides an SOI device that operates in a fully-depleted mode, yet permits thicker films without a significant degradation of sub-threshold slope.

Abstract: A method of adjusting a threshold voltage for a semiconductor device on a semiconductor on insulator substrate includes performing a threshold voltage adjustment implant (25) after formation of a gate structure (16) to reduce the diffusion of implanted dopant (26). Reducing dopant diffusion eliminates the narrow channel effect which degrades device performance. Implanting the dopant (26) after formation of the gate structure (16) simplifies processing of semiconductor device (28) by eliminating a photolithography step which is accomplished by utilizing photoresist (21) used for a source and drain implant (22).

Abstract: A method for forming an improved base link for a bipolar transistor is provided. The wall where the base link (44) is formed is substantially vertical (32,34). An oxide mask (24) is use during etching of the polysilicon layer (18) that provides the wall, instead of a conventional photoresist mask. The preferred method is compatible with manufacturing BiCMOS devices.

Abstract: A magnetizing apparatus capable of magnetizing a magnetic roller having a length up to 30 cm is provided. The magnetizing apparatus is comprised of at least two split members, each of which is provided with magnetic heads employed for applying magnetic fields to a magnetic roller. The end face of each magnetic head is shaped in agreement with the profile of the magnetic roller so that there would be no air gap formed between the magnetic head and the magnetic roller when they come into contact with each other. The split members are separated first and then combined to accommodate the magnetic roller within the magnetizing apparatus. After magnetization, a magnetic force is induced between the magnetic head and the magnetic roller such that an external force stronger than the magnetic force is used to pull the split members apart to fetch out the magnetic roller.

Abstract: This invention pertains to a self-aligned, trench-isolated emitter structure and the method for forming same. The emitter structure comprises a portion of a bipolar transistor which exhibits improved function due to the emitter structure. A single layer of conductive material forms both the emitter and base contacts in the transistor structure, which structure has particularly shallow emitter and base junctions (about 0.15 micrometer or less). The self-aligned emitter contact, isolated from the base contact by a dielectric filled trench, permits overall size reduction of the device, whereby junction area and accompanying leakage across junctions is reduced. In addition, when the structure of the bipolar transistor is such that the trench isolates the emitter area from both the base contact and the extrinsic base, it is possible to provide improved base conductivity without generating peripheral transistor effects.