Patents by Inventor Wen Ling

Wen Ling has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bipolar transistor containing a self-aligned emitter contact and method for forming transistor
    Patent number: 5121184
    Abstract: In a process for fabricating a bipolar transistor with a single polysilicon layer, a silicon nitride layer 22 and a phospho-silicate glass layer 24 are formed on top of the polysilicon layer and the link oxide layers. The glass layer 24 has a high etch selectivity compared to the nitride layer 22 so that the glass layer may be overetched above the emitter polysilicon region without overetching the link oxide. The nitride layer is then removed by etching without significantly affecting the link oxide layer. Thus the emitter metal contact may be self-aligned on top of the emitter polysilicon region 14, 114.
    Type: Grant
    Filed: March 5, 1991
    Date of Patent: June 9, 1992
    Assignee: Hewlett-Packard Company
    Inventors: Wen-Ling M. Huang, Kristin Brigham
  • Process of making a bipolar transistor with a trench-isolated emitter
    Patent number: 5008210
    Abstract: This invention pertains to a self-aligned trench-isolated emitter structure and the method for forming same. The emitter structure comprises a portion of a bipolar transistor which exhibits improved function due to the emitter structure. A single layer of conductive material forms both the emitter and base contacts in the transistor structure, which structure has particularly shallow emitter and base junctions (about 0.15 micrometer or less). The self-aligned emitter contact, isolated from the base contact by a dielectric filled trench, permits overall size reduction of the device, whereby junction area and accompanying leakage across junctions is reduced. In addition, when the structure of the bipolar transistor is such that the trench isolates the emitter area from both the base contact and the extrinsic base, it is possible to provide improved base conductivity without generating peripheral transistor effects.
    Type: Grant
    Filed: April 18, 1990
    Date of Patent: April 16, 1991
    Assignee: Hewlett-Packard Company
    Inventors: Shang-yi Chiang, Wen-Ling M. Huang, Clifford I. Drowley, Paul V. Voorde
  • Prostaglandin derivatives
    Patent number: 4156094
    Abstract: Prostaglandin compounds substituted at the 11-position, and possessing broncho-dilating and hypotensive activity are prepared from PGA.sub.2 and its esters and 15-epimers.
    Type: Grant
    Filed: June 11, 1976
    Date of Patent: May 22, 1979
    Assignee: American Home Products Corporation
    Inventors: Donald P. Strike, Wen-Ling Kao
  • Prostaglandin derivatives
    Patent number: 4097514
    Abstract: Prostaglandin compounds substituted at the 11-position, and possessing bronchodilating and hypotensive activity are prepared from PGA.sub.2 and its esters and 15-epimers.
    Type: Grant
    Filed: August 2, 1974
    Date of Patent: June 27, 1978
    Assignee: American Home Products Corporation
    Inventors: Donald P. Strike, Wen-Ling Kao
  • Prostaglandin derivatives
    Patent number: 4067898
    Abstract: Prostaglandin compounds substituted at the 11-position, and possessing bronchodilating and hypotensive activity are prepared from PGA.sub.2 and its esters and 15-epimers.
    Type: Grant
    Filed: June 11, 1976
    Date of Patent: January 10, 1978
    Assignee: American Home Products Corporation
    Inventors: Donald P. Strike, Wen-Ling Kao
  • Prostaglandin derivatives
    Patent number: 4034002
    Abstract: Prostaglandin compounds substituted at the 11-position, and possessing bronchodilating and hypotensive activity are prepared from PGA.sub.2 and its esters and 15-epimers.
    Type: Grant
    Filed: August 2, 1974
    Date of Patent: July 5, 1977
    Assignee: American Home Products Corporation
    Inventors: Donald P. Strike, Wen-Ling Kao