Abstract: A method of defining a pattern includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.

Abstract: Disclosed herein are methods for treating cancers in a subject. The method includes determining the plasma level of arginine in the subject, followed by administering to the subject an arginine deprivation therapy alone or in combination with an anti-cancer agent based on the determined plasma level of arginine. According to some embodiments of the present disclosure, the anti-cancer agent is selected from the group consisting of FOLFOX, docetaxel, cisplatin, pemetrexed, pembrolizumab, and a combination thereof.

Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die.

Abstract: A data reduction method, apparatus, and computing device and a storage medium are provided. The method includes: when reduction is to be performed on a to-be-reduced data block, obtaining a fingerprint of the to-be-reduced data block; forming an index set based on the fingerprint of the to-be-reduced data block by using index information of data blocks with identical fingerprints; and performing, in the to-be-reduced data block based on the fingerprint of the to-be-reduced data block, data reduction processing on a data block to which index information in a same index set belongs.

Abstract: A method, computer program, and computer system is provided for decoding point cloud data. Data corresponding to a point cloud is received. A number of contexts associated with the received data is reduced based on occupancy data corresponding to one or more parent nodes and one or more child nodes within the received data. The data corresponding to the point cloud is decoded based on the reduced number of contexts.

Abstract: Packaged semiconductor devices are disclosed, comprising: a semiconductor die having a top major surface with a plurality of contact pads thereon, and four sides, wherein the sides are stepped such that a lower portion of each side extends laterally beyond a respective upper portion; encapsulating material encapsulating the top major surface and the upper portion of each of the sides wherein the semiconductor die is exposed at the lower portion of each of the sides; a contact-redistribution structure on the encapsulating material over the top major surface of the semiconductor die; a plurality of metallic studs extending through the encapsulating material, and providing electrical contact between the contact pads and the contact-redistribution structure. Corresponding methods are also disclosed.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: The present disclosure provides a method for constructing a time-varying constitutive model of a seawater-aged GINA gasket for an immersed tube tunnel and relates to the technical field of research of immersed tube waterproof equipment. The method includes the following steps: obtaining stress relaxation curves at different aging temperatures; determining an aging performance change value P of rubber used for a GINA gasket; determining a stress-strain relation curve of the GINA gasket; obtaining a stress-strain relation curve of a full aging cycle; and constructing a constitutive model of stress relaxation and seawater aging of the GINA gasket. According to the present disclosure, a service state of the GINA gasket can be dynamically monitored, which provides a basis for service life evaluation of the GINA gasket and early warning on a risk of the GINA gasket.

Abstract: A method and device for optimizing regulation of reservoir sediment discharging, comprises: determining a relation curve between a dam front water depth and a reservoir capacity; determining a time length by which a sediment peak is propagated to the front of a dam and a time length by which the sediment peak lags behind a flood peak at the front of the dam based on the relation curve and the hydrologic features; determining another relation curve between a sediment peak attenuation rate and a sediment concentration of the sediment peak, and a time length by which the sediment peak subjected to a man-made flood wave is propagated to the front of the dam; and acquiring a real-time sediment concentration, and generating the man-made flood wave based on the time length by which the sediment peak is propagated to the front of the dam and the another relation curve.

Abstract: Provided is a verification phantom. The verification phantom is provided with a slot for holding a film, wherein the slot includes a first slot and a second slot; an opening of the first slot and an opening of the second slot are both disposed on a first outer surface of the verification phantom; and an extraction groove is disposed at a junction, on the first outer surface, of the opening of the first slot and the opening of the second slot.

Abstract: A feedback module is formed with modules comprising a schedule hardware register module and a computation circuit module. The schedule hardware register module receives a modulation signal and a sensing signal, and schedules and temporarily stores signal values of the sensing signal in successive half modulation cycles in sequence by taking a half modulation cycle as a time interval to obtain a temporarily stored sensing signal which has been scheduled. In each half modulation cycle, the computation circuit module calculates a differential signal value of the temporarily stored sensing signal between the previous two half modulation cycles, and outputs the differential signal value as a signal value of the feedback signal. The schedule hardware register module temporarily stores the feedback signal, and the feedback module feedbacks the feedback signal to an integrated optics chip of the photoelectric sensing system integrated optics chip.

Abstract: Systems, devices, and methods for fixed point implementation of a subdivision processing for video decoding are provided, which may include obtaining two vertices associated with an encoded mesh, determining a first normal vector and a second normal vector with integer components. It may also include determining a first normalized normal vector based on the first normal vector and a second normalized normal vector based on the second normal vector using an inverse square root function and determining a middle normalized normal vector associated with a middle-point based on the combination of the fix-point number with the first pre-defined number of digits, the right-shift operation by the second pre-defined number, and the components of the middle-point. It may also include decoding the encoded mesh based on the first normalized normal vector, the second normalized normal vector, and the middle normalized normal vector.

Abstract: Disclosed are an energy conversion module and an energy conversion device. The energy conversion module includes an encapsulation structure and an integrated module packaged therein, the integrated module includes a trace, a power chip, a transistor control element and an energy storage device. The trace includes at least two electrodes, one is exposed from a first surface of the encapsulation structure, and the other is exposed from a second surface of the encapsulation structure. The first surface is opposite to the second surface. The power chip is respectively connected to the two electrodes of the trace. The transistor control element controls the power chip to perform energy conversion through the trace. The energy storage device supplies energy to the transistor control element through the trace.

Abstract: The electronic device includes a substrate; an active layer disposed above the first substrate; a first signal line disposed above the substrate and overlapped with the active layer; and a conductive pattern disposed above the substrate. The conductive pattern includes a first side extending in a first direction, a second side extending in the first direction, and a third side connected between the first side and the second side, and wherein the third side includes a part that the part is not parallel to the first direction and not perpendicular to the first direction, and the part is located out of the first signal line and overlapped with the active layer.

Abstract: The present disclosure provides a flexible printed circuit board and a display apparatus. The flexible printed circuit board includes a plurality of bonding pins, where the plurality of bonding pins are configured to be bonded with a display panel, and the plurality of bonding pins include impedance test pins; and an antenna coil, including two metal connecting wires and the two impedance test pins, where the metal connecting wires are electrically connected between the impedance test pins and a near field communication module; and when the plurality of bonding pins are bonded with the display panel, the two impedance test pins are electrically connected through a conducting wire in the display panel.

Abstract: A method for preparing low-background cement includes: uniformly mixing a seed crystal of cement, C4AF whiskers, and high-magnesium raw material to yield a first mixture, calcining the first mixture at 1400-1500° C., to yield a low-background clinker, the first mixture including 1.0-5.0 wt. % of the seed crystal of cement, 1.0-5.0 wt. % of the C4AF whiskers, and the balance is the high-magnesium raw material; and grinding a second mixture of the low-background clinker and gypsum, to yield low-background cement. The seed crystal of cement is a high-magnesium and low hydration heat clinker, has a specific activity of Ra-226 radioactive nuclides within 50 Bq/kg, and the MgO content of the clinker is between 4.0 wt. % and 5.0 wt. %, with 50 wt. %?C3S?55.0 wt. %; and the high-magnesium raw material has a MgO content between 2.5 wt. % and 3.0 wt. %.

Abstract: The current disclosure provides a semiconductor fabrication method that defines the height of gate structures at the formation of the gate structure. A gate line-end region is formed by removing a portion of a gate structure. A resulted recess is filled with a dielectric material is chosen to have a material property suitable for a later contact formation process of forming a metal contact. A metal contact structure is formed through the recess filling dielectric layer to connect to a gate structure and/or a source/drain region.

Abstract: A device and method for detecting an inter-turn electromagnetic pulse vibration wave characteristic of a turbogenerator rotor winding are provided. A signal source and a time sequence control circuit generate a high-potential abrupt electric field; circularly polarized electromagnetic waves generated by a parasitic inductive power supply and symmetrically deflecting by 180° are respectively coupled to a positive electrode and a negative electrode clockwise or counter-clockwise; a first turn on the positive electrode and a first turn on the negative electrode are mutually induced; as time goes by, energy is returned to the parasitic inductive power supply, and is sequentially conducted to a second turn; the parasitic inductive power supply and the second turn further start feeding back energy to the first turn in circular polarization; all turns sequentially perform feedback and superposition one another stage by stage; and all coupling turns show sinusoidal waves with a same time constant.

Abstract: A semiconductor device includes a temperature-independent current generator that generates a reference current substantially independent of temperature and a mirror current that is a substantial duplicate of the reference current, a pulse signal generator that samples the mirror current so as to generate a pulse signal, and a counter that obtains a number of pulse signals generated by the pulse signal generator, that permits the pulse signal generator to generate a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is less than a predetermined threshold value, and that inhibits the pulse signal generator from generating a pulse signal when it is determined thereby that the number of pulse signals obtained thereby is equal to the predetermined threshold value. A method for monitoring a temperature of the semiconductor device is also disclosed.

Abstract: A method includes forming a gate stack on a middle portion of s semiconductor fin, and forming a first gate spacer on a sidewall of the gate stack. After the first gate spacer is formed, a template dielectric region is formed to cover the semiconductor fin. The method further includes recessing the template dielectric region. After the recessing, a second gate spacer is formed on the sidewall of the gate stack. The end portion of the semiconductor fin is etched to form a recess in the template dielectric region. A source/drain region is epitaxially grown in the recess.