Patents by Inventor Wen Liu

Wen Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150082174
    Abstract: A pre-processing method for video data playback and a playback interface apparatus are provided, wherein a video receiver module receives a video data with clips, the clips corresponding to numbers in first and second time-sequences, and wherein a display module creates a corresponding GUI component for each clip and arranges the GUI components in the playback interface. When two clips consecutive in the first time-sequence are not consecutive in the second, the display module places their corresponding GUI components separately or distinguishably. By discerning the several time-sequences of the video data, this invention ensures random access of data while being visually intuitive and uniform design-wise.
    Type: Application
    Filed: August 18, 2014
    Publication date: March 19, 2015
    Inventors: Chien-Wen LIU, Ting-Wen CHEN, Tao-Cheng YANG
  • Publication number: 20150080698
    Abstract: A measurement device with electroencephalography (EEG) and electrocardiography (ECG) functionalities includes a shell and a turning structure. The shell includes a first contact and a second contact located at a first side of the shell; and a third contact. The turning structure, disposed on the shell, is utilized for adjusting the third contact to be located at the first side when the measurement device is in an EEG mode, and adjusting the third contact to be located at a second side of the shell when the measurement device his in an ECG mode, wherein the second side is substantially opposite to the first side.
    Type: Application
    Filed: February 11, 2014
    Publication date: March 19, 2015
    Applicant: Wistron Corporation
    Inventors: Chi-Chan Chiang, Chia-Yuan Wang, Chia-Liang Lai, Ting-Wen Liu, Chun-Chih Lai
  • Patent number: 8981580
    Abstract: A bonding pad structure is provided that includes two conductive layers and a connective layer interposing the two conductive layers. The connective layer includes a contiguous, conductive structure. In an embodiment, the contiguous conductive structure is a solid layer of conductive material. In other embodiments, the contiguous conductive structure is a conductive network including, for example, a matrix configuration or a plurality of conductive stripes. At least one dielectric spacer may interpose the conductive network. Conductive plugs may interconnect a bond pad and one of the conductive layers.
    Type: Grant
    Filed: May 3, 2012
    Date of Patent: March 17, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shin-Puu Jeng, Yu-Wen Liu, Hao-Yi Tsai, Hsien-Wei Chen
  • Patent number: 8981496
    Abstract: An embodiment includes a substrate, wherein a portion of the substrate extends upwards, forming a fin, a gate dielectric over a top surface and sidewalls of the fin, a liner overlaying the gate dielectric, and an uninterrupted metallic feature over the liner a portion of the liner overlaying the gate dielectric, wherein the liner extends from a top surface of the uninterrupted metallic feature and covers sidewalls of the metallic feature, and wherein the gate dielectric, liner, and uninterrupted metallic feature collectively form a gate, a gate contact barrier, and a gate contact.
    Type: Grant
    Filed: February 27, 2013
    Date of Patent: March 17, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Wen Liu, Chao-Hsiung Wang
  • Publication number: 20150069474
    Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material, wherein a bottom portion of the upper portion comprises a dopant with a first peak concentration; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and an isolation structure surrounding the fin structure, wherein a portion of the isolation structure adjacent to the bottom portion of the upper portion comprises the dopant with a second peak concentration equal to or greater than the first peak concentration.
    Type: Application
    Filed: September 11, 2013
    Publication date: March 12, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Cheng Ching, Guan-Lin Chen, Chao Hsiung Wang, Chi-Wen Liu
  • Publication number: 20150069161
    Abstract: An ice cube positioning and protecting structure of an ice shaver includes a base, a transmission mechanism and a bracket. The transmission mechanism is installed on the base, and the base includes a support base screwed to a rotating rod linked by the transmission mechanism, so that the rotating rod can be moved up and down with respect to the support base. A positioning space is concavely formed on a side of the support base, and a first engaging portion is disposed on at least one side of an inner wall of the positioning space. The bracket has a second engaging portion for installing the bracket into the positioning space, and an ice containing space is concavely and downwardly formed at the bracket, and a planer and an outlet are formed at the bottom of the bracket for putting the ice cube and preventing flake ice from flying out.
    Type: Application
    Filed: September 3, 2014
    Publication date: March 12, 2015
    Inventor: HAO WEN LIU
  • Publication number: 20150073083
    Abstract: Treated, inorganic, non-halogenated flame retardants, methods for treating inorganic, non-halogenated flame retardants for better dispersion and improved powder flow performance in plastics, and apyrous plastics formed from such treated, inorganic, non-halogenated flame retardants are provided. In accordance with an exemplary embodiment, a method for treating an inorganic, non-halogenated flame retardant includes providing a wax emulsion, the wax emulsion comprising a polymer wax, an alkali, and water. The wax emulsion is blended with an inorganic, non-halogenated flame retardant for a period of time to form a treated inorganic, non-halogenated flame retardant. The treated inorganic, non-halogenated flame retardant is dried.
    Type: Application
    Filed: August 7, 2014
    Publication date: March 12, 2015
    Inventors: Yue Wen Liu, Megan Mao, Jun Li
  • Patent number: 8975137
    Abstract: A process of forming a slit in a substrate is provided. A mask layer is formed on a substrate, wherein the mask layer does not include carbon. An etching process is performed to be substrate by using the mask layer as a mask, so as to form a slit in the substrate. The etching gas includes Cl2, CF4 and CHF3, a molar ratio of CF4 to CHF3 is about 0.5-0.8, and a molar ratio of F to Cl is about 0.4-0.8, for example. Further, the step of performing the etching process simultaneously removes the mask layer.
    Type: Grant
    Filed: July 11, 2011
    Date of Patent: March 10, 2015
    Assignee: Nanya Technology Corporation
    Inventors: Wen-Chieh Wang, Yi-Nan Chen, Hsien-Wen Liu
  • Publication number: 20150064893
    Abstract: A method for forming a trench MOS structure. First, a substrate, an epitaxial layer, a doping region and a doping well are provided. The substrate has a first conductivity type, a first side and a second side opposite to the first side. The epitaxial layer has the first conductivity type and is disposed on the first side. The doping well has a second conductivity type and is disposed on the epitaxial layer. The doping region has the first conductivity type and is disposed on the doping well. A gate trench penetrates the doping region and the doping well. The doping well is partially removed to form a bottom section of the gate trench. A gate isolation is formed to cover the inner wall of the bottom section and a top section of the gate trench. The gate trench is filled with a conductive material to form a trench gate.
    Type: Application
    Filed: November 6, 2014
    Publication date: March 5, 2015
    Inventors: Chin-Te Kuo, Yi-Nan Chen, Hsien-Wen Liu
  • Publication number: 20150054039
    Abstract: The present disclosure relates to a Fin field effect transistor (FinFET) device having epitaxial enhancement structures, and an associated method of fabrication. In some embodiments, the FinFET device has a semiconductor substrate having a plurality of isolation regions overlying the semiconductor substrate. A plurality of three-dimensional fins protrude from a top surface of the semiconductor substrate at locations between the plurality of isolation regions. Respective three-dimensional fins have an epitaxial enhancement structure that introduces a strain into the three-dimensional fin. The epitaxial enhancement structures are disposed over a semiconductor material within the three-dimensional fin at a position that is more than 10 nanometers above a bottom of an adjacent isolation region. Forming the epitaxial enhancement structure at such a position provides for sufficient structural support to avoid isolation region collapse.
    Type: Application
    Filed: August 20, 2013
    Publication date: February 26, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuo-Cheng Ching, Zhi-Chang Lin, Chao Hsiung Wang, Chi-Wen Liu
  • Publication number: 20150053187
    Abstract: A crankshaft structure for a model engine contains a body and at least one fin member. The body is formed in an elongated shaft shape and includes a cam disc disposed on a distal end thereof and a connecting shaft extending outwardly from an end surface of the cam disc, a window defined on a middle section thereof, and a channel formed therein and passing through the end surface of the cam disc so as to inhale and exhaust mixed oil gas. The at least one fin member is mounted at a position of the channel where corresponds to the window.
    Type: Application
    Filed: August 26, 2013
    Publication date: February 26, 2015
    Inventor: NAI WEN, LIU
  • Publication number: 20150054040
    Abstract: A device includes a substrate, insulation regions extending into the substrate, a first semiconductor region between the insulation regions and having a first valence band, and a second semiconductor region over and adjoining the first semiconductor region. The second semiconductor region has a compressive strain and a second valence band higher than the first valence band. The second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin, and a lower portion lower than the top surfaces of the insulation regions. The upper portion and the lower portion are intrinsic. A semiconductor cap adjoins a top surface and sidewalls of the semiconductor fin. The semiconductor cap has a third valence band lower than the second valence band.
    Type: Application
    Filed: October 3, 2014
    Publication date: February 26, 2015
    Inventors: Yi-Jing Lee, Chi-Wen Liu
  • Patent number: 8962329
    Abstract: Novel isolated DNA sequences which comprise all or part of a gene cluster encoding sanglifehrin synthase, processing and regulatory genes involved in the biosynthesis of a mixed non-ribosomal peptide/polyketide compound, or mutants having altered biosynthetic capability, polypeptides or mutants thereof encoded by DNA or the mutants, vectors containing the DNA or the mutants thereof, host cells transformed with the DNA, the mutants thereof, or the vector, and a method for producing sanglifehrin compounds. Compounds with cyclophilin inhibition activity used as immunosuppressants, antivirals or cardiac protection agents.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: February 24, 2015
    Assignee: Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences
    Inventors: Wen Liu, Nan Jiang, Xudong Qu
  • Patent number: 8963282
    Abstract: A semiconductor structure includes a matrix, an integrated circuit and a scribe line. The matrix includes a scribe line region and a circuit region. The integrated circuit is disposed within the circuit region. The scribe line is disposed within the scribe line region and includes a crack stop trench which is disposed in the matrix and adjacent to the circuit region. The crack stop trench is parallel with one side of the circuit region and filled with a composite material in a form of a grid to form a crack stop structure.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: February 24, 2015
    Assignee: Nanya Technology Corp.
    Inventors: Tse-Yao Huang, Yi-Nan Chen, Hsien-Wen Liu
  • Patent number: 8963251
    Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a fin structure disposed over the substrate in the gate region. The fin structure includes a first semiconductor material layer as a lower portion of the fin structure, a semiconductor oxide layer as a middle portion of the fin structure and a second semiconductor material layer as an upper portion of the fin structure. The semiconductor device also includes a dielectric feature disposed between two adjacent fin structures over the substrate. A top surface of the dielectric feature located, in a horizontal level, higher than the semiconductor oxide layer with a distance d. The semiconductor device also includes a high-k (HK)/metal gate (MG) stack disposed in the gate region, including wrapping over a portion of the fin structure.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: February 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tung Ying Lee, Yu-Lien Huang, Chung-Hsien Chen, Chi-Wen Liu
  • Publication number: 20150050783
    Abstract: An embodiment is a molding chamber. The molding chamber comprises a mold-conforming chase, a substrate-base chase, a first radiation permissive component, and a microwave generator coupled to a first waveguide. The mold-conforming chase is over the substrate-base chase, and the mold-conforming chase is moveable in relation to the substrate-base chase. The first radiation permissive component is in one of the mold-conforming chase or the substrate-base chase. The microwave generator and the first waveguide are together operable to direct microwave radiation through the first radiation permissive component.
    Type: Application
    Filed: October 29, 2014
    Publication date: February 19, 2015
    Inventors: Jing-Cheng Lin, Chen-Hua Yu, Shin-Puu Jeng, Jui-Pin Hung, Hsien-Wen Liu
  • Patent number: 8955489
    Abstract: A crankshaft structure for a model engine contains a body and at least one fin member. The body is formed in an elongated shaft shape and includes a cam disc disposed on a distal end thereof and a connecting shaft extending outwardly from an end surface of the cam disc, a window defined on a middle section thereof, and a channel formed therein and passing through the end surface of the cam disc so as to inhale and exhaust mixed oil gas. The at least one fin member is mounted at a position of the channel where corresponds to the window.
    Type: Grant
    Filed: August 26, 2013
    Date of Patent: February 17, 2015
    Inventor: Nai Wen Liu
  • Patent number: 8953103
    Abstract: The device comprises a projection display module is coupled to the control IC for the data projection. The projection display module includes three liquid crystal panels that perform image displays in red, green, and blue, respectively; light emitting sources are employed and positioned in correspondence with the liquid crystal panels, respectively. A prism is used for each display color combination, wherein the liquid crystal panels and the light emitting sources are positioned on the light-incidence side of the side surfaces of the prism. A projection lens is provided on the light emission side of the prism.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: February 10, 2015
    Assignee: Bascule Development AG LLC
    Inventors: Kuo-Ching Chiang, Chi Wen Liu, Ching Yu Chang
  • Publication number: 20150035020
    Abstract: Systems and methods are provided for fabricating semiconductor device structures on a substrate. For example, a substrate including a first region and a second region is provided. One or more first semiconductor device structures are formed on the first region. One or more semiconductor fins are formed on the second region. One or more second semiconductor device structures are formed on the semiconductor fins. A top surface of the semiconductor fins is higher than a top surface of the first semiconductor device structures.
    Type: Application
    Filed: August 1, 2013
    Publication date: February 5, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: CHI-WEN Liu, CHAO-HSIUNG WANG
  • Publication number: 20150035017
    Abstract: The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle.
    Type: Application
    Filed: July 31, 2013
    Publication date: February 5, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Wen Liu, Chi-Yuan Shih, Li-Chi Yu, Meng-Chun Chang, Ting-Chu Ko, Chung-Hsien Chen