Abstract: A backlight module including an LGP, an optical film, a first light source is provided. The LGP has a bottom surface, a light emitting surface, a first light incident surface, and microstructures. Each microstructure is recessed into or protrudes out of the bottom surface and includes at least two structural units. A section line of each structural unit on a first reference plane is a curve, and the curve has a peak point. A distance between two peak points of two adjacent structural units along a first direction is greater than 0 and smaller than a half of a total width of the two structural units along the first direction. Each microstructure has a symmetric plane perpendicular to the light emitting surface and the first light incident surface. The optical film is located on the light emitting surface. The first light source is located beside the first light incident surface.

Abstract: Provided herein are methods and compositions related to a retinoid receptor-selective pathway. As described herein, this pathway can be targeted to manipulate a tumor microenvironment. For example, the methods and compositions described herein can be used to induce apoptosis in a cancer cell. Further, the compositions described herein, including Sulindac and analogs thereof, can be used to target this pathway for the treatment or prevention of cancer in human patients.

Abstract: A bio-sensing device includes a first platform, a second platform, at least one first magnetic element, and at least one second magnetic element. The first platform is configured to support a microplate. The microplate has a plurality of wells, each of which stores a reagent and a plurality of microbeads. The second platform is movably placed below the first platform. The first and the second magnetic elements are respectively located on the second platform. The first magnetic element moves along with the second platform to magnetically attract the microbeads in the wells, the second magnetic element moves along with the second platform to demagnetize the microbeads in the wells, and magnetism of the first magnetic element is opposite to magnetism of the second magnetic element.

Abstract: The present invention provides a method for inhibiting the growth of cancer stem cells, particularly colorectal cancer stem cells, liver cancer stem cells, lung cancer stem cells or breast cancer stem cells, comprising administering to a subject in need thereof a therapeutically effective amount of a compound of antimycin A or a pharmaceutically acceptable salt thereof, together with a pharmaceutically acceptable carrier.

Abstract: A device comprises a substrate comprising silicon, a fin structure comprising a lower portion formed of silicon and enclosed by an isolation region, a middle portion formed of silicon-germanium-carbon, wherein the middle portion is enclosed by an oxide layer, an upper portion formed of silicon, wherein the upper portion comprises a channel and a silicon-carbon layer formed between the middle portion and the upper portion, a first source/drain region comprising a first silicon-phosphorus region and a first silicon-carbon layer formed underlying the first silicon-phosphorus region and a second source/drain region comprising a second silicon-phosphorus region and a second silicon-carbon layer formed underlying the second silicon-phosphorus region.

Abstract: Some embodiments of the present disclosure relate to an epitaxially grown replacement channel region within a transistor, which mitigates the variations within the channel of the transistor due to fluctuations in the manufacturing processes. The replacement channel region is formed by recessing source/drain and channel regions of the semiconductor substrate, and epitaxially growing a replacement channel region within the recess, which comprises epitaxially growing a lower epitaxial channel region over a bottom surface of the recess, and epitaxially growing an upper epitaxial channel region over a bottom surface of the recess. The lower epitaxial channel region retards dopant back diffusion from the upper epitaxial channel region, resulting in a steep retrograde dopant profile within the replacement channel region. The upper epitaxial channel region increases carrier mobility within the channel.

Abstract: Some embodiments of the present disclosure relate to a semiconductor device configured to mitigate against parasitic coupling while maintaining threshold voltage control for comparatively narrow transistors. In some embodiments, a semiconductor device formed on a semiconductor substrate. The semiconductor device comprises a channel comprising an epitaxial layer that forms an outgrowth above the surface of the semiconductor substrate, and a gate material formed over the epitaxial layer. In some embodiments, a method of forming a semiconductor device is disclosed. The method comprises etching the surface of a semiconductor substrate to form a recess between first and second isolation structures, forming an epitaxial layer within the recess that forms an outgrowth above the surface of the semiconductor substrate, and forming a gate material over the epitaxial layer. Other embodiments are also disclosed.

Abstract: A magnetic maneuvering system for capsule endoscope includes the capsule endoscope, an annular fitting sleeved around the outer surface of the capsule endoscope. A plurality of magnetic driven parts are provided and distributed on the annular fitting member. The control device includes a magnetic driving part for magnetically actuating the magnetic driven parts, thus enabling the capsule endoscope to rotate and move in an organism as a result of the actuation of the magnetic driven parts. By magnetically controlling the magnetic driven parts, the capsule endoscope is allowed to rotate or move under the control of the control device to achieve better image retrieval results and improve over the poor image retrieval results obtained by the prior art since the location and direction of a traditional capsule endoscope, relying solely on the contractions of the digestive tract, cannot be controlled.

Abstract: A medical ventilator capable of early detecting and recognizing types of pneumonia, a gas recognition chip, and a method for recognizing gas thereof are disclosed. The gas recognition chip of the medical ventilator comprises a sensor array, a sensor interface circuit, a stochastic neural network chip, a memory and a microcontroller. The sensor array receives a plurality of multiple types of gases to produce odor signals corresponding to each type of gas. The sensor interface circuit analyzes the odor signals to produce gas pattern signals corresponding to each type of gas. The stochastic neural network chip amplifies the differences between the gas pattern signals and performs dimensional reduction on the gas pattern signals to aid the analysis. The memory stores training data. The microcontroller performs a mixed gas recognizing algorithm to early detect and recognize the type of the pneumonia according to the gas training data.

Abstract: An energy harvester comprising: a microbial fuel cell comprising an anode; and a pump comprising a flexible diaphragm that is configured to be flexed by an ambient, renewable energy source such that with each flexing of the diaphragm nutrient-rich media is pumped past the anode.

Abstract: A transistor and a method for forming the transistor are provided. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile has high dopant impurity concentration areas at opposed ends of the transistor channel.

Abstract: A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.

Abstract: A digital transmitter includes: a plurality of adjustable delay lines arranged to delay a plurality of digital input signals by a plurality of delay times to generate a plurality of delayed digital input signals respectively; a plurality of converting devices arranged to convert the plurality of delayed digital input signals into a plurality of converting signals respectively; and a calibration device arranged to adjust a delay time of at least one adjustable delay line in the plurality of adjustable delay lines to make the plurality of converting devices convert the plurality of delayed digital input signals at respective desire time points.

Abstract: A patch antenna includes an irradiation plate, a grounding point and a feeding point. The irradiation plate has a long edge. The grounding point is located at the long edge. The feeding point is located at the long edge. The grounding point and the feeding point are symmetrical with respect to a center of the long edge.

Abstract: The disclosure relates to a field effect transistor. An exemplary structure for a field effect transistor comprises a substrate; a source region and a drain region disposed in the substrate; a gate structure over the substrate comprising sidewalls and a top surface, wherein the gate structure interposes the source region and the drain region; a contact etch stop layer (CESL) over at least a portion of the top surface of the gate structure; an interlayer dielectric layer over the CESL; a gate contact extending through the interlayer dielectric layer; and a source contact and a drain contact extending through the interlayer dielectric layer, wherein a first distance between an edge of the source contact and a first corresponding edge of the CESL is about 1 nm to about 10 nm.

Abstract: An assembly includes an electrical connector, a cable unit, and adapter terminals. The electrical connector includes an insulator body and conductive terminals disposed at the insulator body. Each conductive terminal includes an insert arm positioned outside the insulator body. The cable unit includes a plug connector and cables connected to the plug connector. Each of the adapter terminals is connected to a core wire of a corresponding cable and is sleeved on the insert arm of a corresponding conductive terminal. Each adapter terminal is electrically connected between the core wire of the corresponding cable and the insert arm of the corresponding conductive terminal.

Abstract: A semiconductor device includes a substrate having a circuit region and a seal ring region. The seal ring region surrounds the circuit region. A seal ring structure is disposed over the seal ring region. The seal ring structure has a first portion and a second portion above the first portion. The first portion has a width W1, and the second portion has a width W2. The width W1 is less than the width W2.

Abstract: A semiconductor device with multi-level work function and multi-valued channel doping is provided. The semiconductor device comprises a nanowire structure and a gate region. The nanowire structure is formed as a channel between a source region and a drain region. The nanowire structure has a first doped channel section joined with a second doped channel section. The first doped channel section is coupled to the source region and has a doping concentration greater than the doping concentration of the second doped channel section. The second doped channel section is coupled to the drain region. The gate region is formed around the junction at which the first doped section and the second doped section are joined. The gate region has a first work function gate section joined with a second work function gate section. The first work function gate section is located adjacent to the source region and has a work function greater than the work function of the second work function gate section.

Abstract: A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate.

Abstract: A data transmission system, a data transmission method, a data receiving method, and an electric device are disclosed. The data transmission method is adapted to transmit data of a first device to a second device. The first device includes a first capacitance touch panel, and the second device includes a second capacitance touch panel. The data transmission method includes the following steps. After the data is selected in the first device, the first capacitance touch panel is aligned with the second capacitance touch panel. The first device supplies the data to the first capacitance touch panel to form the capacitive coupling between the first capacitance touch panel and the second capacitance touch panel. The second device obtains the data through the capacitive coupling between the first capacitance touch panel and the second capacitance touch panel.