Abstract: An improved structure of a pin platform of an integrated circuit having a pin platform body including a chip seat and a plurality of leading plates having their end portions being concentrated on the chip seat and the chip seat being connected to the pin platform body via the connection plate, characterized in that the surrounding of the chip seat is provided with a framing side, and the framing side is connected to a connection plate, and the surface of the chip seat is smaller than the connection surface of the IC to be installed, and the size of the framing side is larger than the size of the connection face of the IC. Therefore, a high performance greenery package is obtained and the ground wire of the IC can be soldered to the framing side, which provides a smooth connection and a communication.

Abstract: An improved structure of a pin platform of an integrated circuit having a pin platform body including a chip seat and a plurality of leading plates having their end portions being concentrated on the chip seat and the chip seat being connected to the pin platform body via the connection plate, characterized in that the surrounding of the chip seat is provided with a framing side, and the framing side is connected to a connection plate, and the surface of the chip seat is smaller than the connection surface of the IC to be installed, and the size of the framing side is larger than the size of the connection face of the IC. Therefore, a high performance greenery package is obtained and the ground wire of the IC can be soldered to the framing side, which provides a smooth connection and a communication.

Abstract: A semiconductor chip package with cooling arrangement includes a heat sink adapted for covering at least a semiconductor chip, characterized in that said heat sink has an inverted U-shaped cross section thereby forming a recess at an inner bottom thereof adapted for covering at least a semiconductor chip and a plurality of pins extending downwardly from a circumferential lower edge of said heat sink, each of said pins being formed with a neck, an enlarged head, and an open slot separating said neck and said enlarged head into two portions, whereby the package can rapidly remove heat from the semiconductor chip, filter noise and reduce inductance.

Abstract: A fabrication method of semiconductor packaging and the packaging element is disclosed. A layer of copper is formed on a thick heat-resistant tape and the surface of the copper layer is coated with a light sensitive photoresist. A light source passes through a pre-fabricated circuit negative being performed on the copper layer such that the photoresist is retained on the surface of the copper layer. An etching step is performed so as to obtain a copper wire with circuit diagram. After that, a wire bonding or a flip chip method is used to bind copper wire circuit with the chip. An appropriate packaging method is performed, a packaging element is obtained after the heat-resistant tape is removed.

Abstract: A method type 3D stacked IC package is disclosed. The present invention has an appropriate chip interposer (organic substrate, soft PI substrate) which is connected to the chip by flip chip method or wire bonding method. Another similar interposer and the connected chip are formed between the top face of the original interposer and the two interposers, and anisotropic conductive film/paste is employed to connect a flexible circuit board to between the first interposer and the inner side of the second interposer to form a 3-D structure. The top face of the interposer is connected to a chip to form an extended structure. Additionally, the top layer is formed as a bottom layer to provide with one or more than one similar extended structure.

Abstract: A semiconductor chip package with cooling arrangement includes a heat sink adapted for covering at least a semiconductor chip, characterized in that said heat sink has an inverted U-shaped cross section thereby forming a recess at an inner bottom thereof adapted for covering at least a semiconductor chip and a plurality of pins extending downwardly from a circumferential lower edge of said heat sink, each of said pins being formed with a neck, an enlarged head, and an open slot separating said neck and said enlarged head into two portions, whereby the package can rapidly remove heat from the semiconductor chip, filter noise and reduce inductance.

Abstract: The present invention provides a mold injection method for semiconductor device by which the problem of residual metal is overcome. The inventive method comprises following steps: die attaching; wire bonding; attaching solder-resisting tape around the die; molding; removing the older-resisting tape; marking; ball placement: and singulation.

Abstract: A device for making metal bumps includes a hard conical tubular member having a vertical passage which is conical in shape and has a larger diameter at a bottom such that a lower portion of the vertical passage is larger than an upper portion of the vertical passage, whereby a metal wire is inserted into the vertical passage of the hard conical tubular member, with a lower end of the metal wire protruded downwardly out of the vertical passage, the lower end of the metal wire is melted to form a ball, the hard conical tubular member is approached to a raised platform formed on a top of a chip, and a load is applied to the metal wire and the metal wire is heated and bonded on the pad of die and ultrasonic energy is applied to deform the melted metal so as to fill up the lower portion of the vertical passage thereby forming a metal bump on the raised platform of the chip, and finally the hard conical tubular member is removed to pull off the necking position between the metal wire and a top of the metal bump the

Abstract: A device for making metal bumps includes a hard conical tubular member having a vertical conical passage at an upper portion thereof, a bell shaped chamber at a lower portion thereof which is larger than the vertical conical passage in diameter, located under and communicated with the vertical conical passage, and a circular recess which is larger than the bell shaped chamber in diameter, located under and communicated with the bell shaped chamber, thereby forming a capillary tube with a surface.

Abstract: A device for making metal bumps includes a hard conical tubular member having a vertical conical passage at an upper portion thereof, a bell shaped chamber at a lower portion thereof which is larger than the vertical conical passage in diameter, located under and communicated with the vertical conical passage, and a circular recess which is larger than the bell shaped chamber in diameter, located under and communicated with the bell shaped chamber, thereby forming a capillary tube with a surface.

Abstract: The present invention proposes a device having a far IR radiator for enhancing the growth of hair, which device comprises a main body having a hold part and a contact part. A battery is installed in the hold part. A far IR radiator is installed in the contact part. A transparent cover is further arranged on the outer surface of the contact part. A comb having arrays of comb fingers is joined on the cover. The main body has a switch and a power socket. The battery will let the far IR radiator emit far IR lights to stimulate the skin of the scalp. Therefore, the hairs can be protected and nourished, and hair follicles can be activated to grow new hairs so that the hairs will be blacker and denser and have more vitality.

Abstract: The present invention relates to a manufacturing method for multilayer high density substrate. The circuit layout of the first layer substrate of the multilayer board requires a high demand of pitch density, and therefore polyimide layer is used to make into polyimide substrate (or other high density polymeric film substrate), and combines with the non-high density multilayer board formed from second layer board (or more layer boards) made of organic substrate. In making the organic multilayer board, the adjacent surface of the first layer polyimide substrate (or high density polymeric film substrate), corresponding to appropriate solder pad position of the first layer polyimide substrate (or high density polymeric film substrate), is formed with a solder bump. Thus, when the individual layer board and the first layer substrate are combined, direct heating and compression are applied, such that the bump and the solder pad are bound and electrically connected.

Abstract: An ultra-thin film package, characterized in that polymeric film die carrier (or substrate) or polyimide (PI) die carrier (or substrate) is employed, and the leg position for die bonding is made into a recess shape to lower the thickness after bonding, and polymeric film die carrier (or substrate) or PI die carrier (or substrate) is made into a thin film shape by a fabrication technique (chemical etching or laser fabrication method), and the I/O leg position is made into a recess shape and the die is glued to the polymeric film die carrier (or substrate) or PI die carrier (or substrate) and then changed with a package material.

Abstract: A method of forming cylindrical bumps on a substrate for integrated circuits includes the steps of: forming copper circuits on a board of a substrate by means of electroplating; covering said board with a screening material; forming openings in said screening material to align with copper circuits on said board, filling pure copper or high melting point metal into said openings by electroplating to form cylindrical projections; forming a layer of solder alloy on an upper end of each of said cylindrical projections to be even with an upper surface of said screening material, and removing said screening material to leave the cylindrical bumps, whereby the engagement operation between the die and the substrate can be facilitated and the manufacture of the die can be easier.

Abstract: A wire bonding technique applied to wafer bump and wafer level chip size package structure and the method of manufacturing thereof comprising under no repassivation layer and without an under bump metallurgy layer, direct forming metal bump on a metal pad of a wafer surface, ball bump, method being employed to form metal bump, and wire bonding of ultrasonic vibration being used to join a suitable metal wire on the metal pad, next pulling off the metal wire and leaving the metal bump, the height of the metal bump is controlled by the parameters of the type, diameter and wire bonding of the metal wire; planarizing the metal bump of all wire bonding to an appropriate height using metallurgical tools; implanting solder bump by means of implant ball or solder printing technology on the metal bump, and an under bump metallurgy layer being formed on the top face of the metal block by means of metal deposition method in case an unfavorable intermetallic compound is formed between the metal (used for the metal bump) a

Abstract: A method of forming metal bumps on a wafer includes the steps of adhering a heat-resistant and steady synthetic tape on the top of the wafer, punching holes through the synthetic tape to form a blind hole on the synthetic tape above the under-bump-metallurgy layer (UBM), filling solder paste into the blind hole by a pusher, melting and then cooling the solder paste into a solder block removing the synthetic tape to expose the solder block, and melting the solder block to form a ball-shaped solder bump.

Abstract: A semiconductor chip fabrication method, including the steps of: (a) attaching dies to a chip carrier and then bonding lead wires to the dies, (b) adhering heat-resisting plastic strips to the chip carrier and connecting them to each die at one corner for guiding a molten resin to the dies, (c) pouring a molten resin out of nozzles of a molding apparatus, permitting the molten resin to be guided by the heat-resisting plastic strips to the dies and then molded on the dies, and (d) marking the molded dies with marks and placing them with balls, and then separating the individually molded dies from one other.

Abstract: Complementary DNA and genomic clones for three variants of GST-.pi. are disclosed. It is demonstrated that certain of these variants are overexpressed in gliomas, thereby indicating an involvement with that form of cancer. This permits the detection and treatment of certain classes of tumors using new compositions such as GST-.pi. genes, oligonucleotides, peptides and antibodies.

Abstract: A reusable metal frame for manufacturing of encapsulated semiconductor devices includes a metal sheet having a plurality of openings disposed in compliance with topology of semiconductor devices carried by a supporting structure. During the molding operation, the frame is superposed over the supporting structure with each semiconductor device to be encapsulated, positioned centrally within one of the openings. The encapsulating material (resin, plastic, or the like) is supplied to each semiconductor device and stays within each opening, held in place by continuous uninterrupted contour of each opening. After the encapsulating material has been cooled, the metal frame is readily removed, and may be used in other molding operations.