Abstract: An internal rotor type nail drive device of electric nail gun, comprising a nailing rod and an internal rotor type rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator comprises a stator and a rotor arranged inside the stator, even groups of electromagnetic mutual action components are configured in pairs between the stator and the rotor, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by a specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified, and the kinetic energy for nailing can be increased.

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a package structure, a circuit structure, a bonding structure and an external element. The circuit structure is disposed on the package structure and is electrically connected to the package structure. The circuit structure has a recess. The bonding structure includes a first bonding pad and a second bonding pad. The second bonding pad is disposed in the recess, and the second bonding pad is disposed on the first bonding pad. The bonding structure is disposed between the circuit structure and the external element. The external element is electrically connected to the circuit structure through the bonding structure. A width of the first bonding pad is smaller than a width of the second bonding pad.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: The present invention relates to a composition comprising an amino acid-modified polymer, a carboxypolysaccharide, and may further include a metal ion for anti-adhesion and vector application. More specifically, the invention relates to a thermosensitive composition having enhanced mechanical and improved water-erosion resistant properties for efficiently preventing tissue adhesions and can serve as a vector with bio-compatible, bio-degradable/absorbable, and in-vivo sustainable properties.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: Synthetic amino acid-modified polymers and methods of making the same and using the same are disclosed. The synthetic amino acid-modified polymers possess distinct thermosensitive, improved water-erosion resistant, and enhanced mechanical properties, and are suitable of reducing or preventing formation of postoperative tissue adhesions. Additionally, the amino acid-modified polymers can also be used as a vector to deliver pharmaceutically active agents.

Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A memory device includes a resistor and a controller chip. The controller chip includes a first controller, a second controller, a first set of input/output (I/O) circuits, a second set of I/O circuits, a first calibration circuit, a second calibration circuit, and an arbitration circuit. The first controller transmits a first controller calibration request. The second controller transmits a second controller calibration request. The arbitration circuit instructs the first calibration circuit to perform a first controller calibration on the first set of I/O circuits using the resistor in response to the first controller calibration request, and instructs the second calibration circuit to perform a second controller calibration on the second set of I/O circuits using the resistor in response to the second controller calibration request. A first time interval of performing the first controller calibration and a second time interval of performing the second controller calibrations are non-overlapping.

Abstract: The present invention provides an optical sensor package assembly. The light shield is arranged in the groove of a package housing above the photosensitive chip. The connection wires between the substrate, the light emitting unit and the photosensitive chip can be printed or disposed on the surface of the substrate. Further, a distance between the photosensitive element and the chip edge is designed to reduce or avoid side leakage interference.

Abstract: The present invention proposes a chip reliability test assembly, which comprises a motherboard and a daughter board. The motherboard is used to support the chips during an aging acceleration process at high temperature. The daughter board is used to measure the electricity of chip after the aging acceleration process. Each chip holder is removable off the motherboard. The daughter board does not go through the aging acceleration process and can be reusable.

Abstract: The present invention provides a light sensor with dark current elimination. A dark current from a covered photodiode and a sensed current from a photodiode are respectively transformed to a dark voltage and a sensed voltage by a controlled integration circuit. A reverse capacitor receives the dark voltage and the sensed voltage to cancel out for each other, and outputs a corrected sensing voltage.

Abstract: The invention relates to a method, and an apparatus for accessing to data in response to a power-supply event. The method, performed by a flash controller, includes steps for: reading a plurality of physical pages of data in a current block from a flash module during a sudden power off recovery procedure; determining whether a power-supply event has occurred according to an error correction result corresponding to read physical pages; reconstructing a first flash-to-host mapping (F2H) table to include physical-to-logical mapping (P2L) information from the 0th page to a page before a last valid page in the current block when the power-supply event has occurred; and programming the reconstructed first F2H table into a location of the flash module.

Abstract: The present invention provides an adaptive proximity sensing device, which can adjust the lighting power of a light-emitting element according to the sensed intensity to extends the sensing range. Further, the device can normalize the final sensed intensity to return the normal sensed intensity. Moreover, the uses a linear model of the normal sensed intensity and the distance, so the device can quickly determine the distance of the object.

Abstract: This invention provides an earphone with a low light transmittance and a non-porous sensor cover. Covering the sensing cover on the proximity sensing device can reduce the interference of most of the ambient light and improve measurement accuracy.

Abstract: This invention provides an earphone with a low light transmittance and a non-porous sensor cover. Covering the sensing cover on the proximity sensing device can reduce the interference of most of the ambient light and improve measurement accuracy.

Abstract: The heart rate and blood oxygen monitoring device of the present invention utilizes two ambient light calibration DACs, which can quickly calibrate noise signals generated by ambient light. The heart rate and blood oxygen monitoring device can provide more accurate heart rate and blood oxygen values for optical measurement methods.

Abstract: The present invention provides a proximity sensing device with linear electrical offset calibration, which can record electrical offsets caused by different dark currents under different settings of the pulse count or the pulse time, and the proximity sensing device uses these electrical offsets to obtain the linear electrical offset ratio. Then calculate and infer the electrical offset generated in actual use through the linear electrical offset ratio to calibrate sensing signal.

Abstract: A semiconductor device with different gate structures and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a thermal oxide layer on top and side surfaces of the fin structure, forming a polysilicon structure on the thermal oxide layer, doping portions of the fin structure uncovered by the polysilicon structure to form doped fin portions, forming a nitride layer on the polysilicon structure and the thermal oxide layer, forming an oxide layer on the nitride layer, doping the nitride layer with halogen ions, forming a source/drain region in the fin structure and adjacent to the polysilicon structure, and replacing the polysilicon structure with a gate structure.