Patents by Inventor Wen-Sheng Lin

Wen-Sheng Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10061512
    Abstract: A data storage device including a flash memory and a controller is provided. The flash memory has a plurality of TLC blocks, each of which includes a plurality of pages. The controller checks whether any of the TLC blocks was undergoing a write operation and unfinished at the time that the power-off event occurred when the data storage device resumes operation after a power-off event. When a first TLC block was undergoing the write operation and unfinished at the time that the power-off event occurred, the controller further checks whether data stored in a page which was the last one being written in the first TLC block can be successfully read, and continues to write the remaining data into the first TLC block when the data of the page which was the last one being written in the first TLC block can be successfully read.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: August 28, 2018
    Assignee: Silicon Motion, Inc.
    Inventor: Wen-Sheng Lin
  • Publication number: 20180240645
    Abstract: A load lock system for charged particle beam imaging with a particle shielding plate, a bottom seal plate and a plurality of sensor units is provided. The sensor units are located above the wafer, the shield plate is designed to have a few number of screws, and the bottom seal plate contains no cable, no contact sensors and fewer screws used. In the invention, the system is designed to improve the contamination particles from components in the load lock system of charged particle beam inspection tool and also to simplify its assembly.
    Type: Application
    Filed: February 23, 2017
    Publication date: August 23, 2018
    Inventors: HSUAN-BIN HUANG, CHUN-LIANG LU, CHIN-FA TU, WEN-SHENG LIN, YOU-JIN WANG
  • Publication number: 20180196722
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller writes a data sector into a specific page of a specific block of the flash memory, and determines whether the specific block was undergoing a write operation at the time that a power-off event occurred after the data sector is written into the specific page, wherein the controller determines whether to read the data sector from the specific block according to whether the specific block was undergoing a write operation at the time that the power-off event occurred to confirm whether the data sector was successfully written into the specific page.
    Type: Application
    Filed: July 28, 2017
    Publication date: July 12, 2018
    Inventor: Wen-Sheng Lin
  • Patent number: 10019186
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The flash memory has a plurality of single-level-cell units and a plurality of triple-level cell units. The controller performs a first predetermined number of read processes on a second predetermined number of specific single-level-cell units to program data stored in the second predetermined number of specific single-level-cell units into a specific triple-level cell unit of the triple-level cell units and determines whether any of the second predetermined number of specific single-level-cell units has not been read successfully by any of the read processes when the specific triple-level cell unit cannot be read successfully.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: July 10, 2018
    Assignee: Silicon Motion, Inc.
    Inventor: Wen-Sheng Lin
  • Publication number: 20180165172
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The flash memory has a plurality of blocks, and the blocks include a current block and temporary block. The controller writes a first data sector corresponding to a first logical address into the current block, and determines whether the temporary block has a second data sector that also corresponds to the first logical address, wherein when the temporary block already has a second data sector corresponding to the first logical address, the controller writes a first temporary-block table into the temporary block.
    Type: Application
    Filed: July 28, 2017
    Publication date: June 14, 2018
    Inventor: Wen-Sheng Lin
  • Publication number: 20180165191
    Abstract: The present invention provides a data storage device that includes a flash memory and a controller. The flash memory has a plurality of blocks, and each of the blocks has a plurality of pages arranged sequentially along a first direction. The controller determines whether an X-th page of a temporary block of the blocks can be successfully read when the data storage device resumes operation after a power-off event, and writes dummy data and a temporary-block table into the (X+1)-th page of the temporary block when the X-th page can be successfully read, wherein the X-th page is the page that was read last from the temporary block before the power-off event occurred, the temporary-block table records the information of all the pages in the temporary block, and X is a positive integer.
    Type: Application
    Filed: July 28, 2017
    Publication date: June 14, 2018
    Inventor: Wen-Sheng Lin
  • Patent number: 9996462
    Abstract: The present invention provides a data storage device that includes a flash memory and a controller. The flash memory has a plurality of blocks, and each of the blocks has a plurality of pages arranged sequentially along a first direction. The controller determines whether an X-th page of a temporary block of the blocks can be successfully read when the data storage device resumes operation after a power-off event, and writes dummy data and a temporary-block table into the (X+1)-th page of the temporary block when the X-th page can be successfully read, wherein the X-th page is the page that was read last from the temporary block before the power-off event occurred, the temporary-block table records the information of all the pages in the temporary block, and X is a positive integer.
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: June 12, 2018
    Assignee: Silicon Motion, Inc.
    Inventor: Wen-Sheng Lin
  • Publication number: 20180123513
    Abstract: Differing from conventional oscillator circuit does not include temperature compensation function, the present invention particularly constitutes a gain stage, a current mirror unit, a clamping current supplying unit, a noise inhibiting unit, a compensation unit, and a reference signal generating unit to a novel oscillator circuit having temperature compensation function. A variety of experimental data have proved that, based on the normal operation of the compensation unit and the reference signal generating unit, the oscillator frequency of the oscillator circuit of the present invention almost be kept at same level even if the ambient temperature continuously increases. Therefore, because the frequency drift due to temperature variation would not occur in the oscillator circuit of the present invention, the novel oscillator circuit is potential oscillator to replace the conventional oscillators applied in analog-to-digital convertors or time-to-digital convertors.
    Type: Application
    Filed: April 9, 2017
    Publication date: May 3, 2018
    Inventors: WEN-SHENG LIN, SHENG-CHENG LEE, SHIH-HAO LAN
  • Publication number: 20180120475
    Abstract: Differing from conventional optical sensing device used in smart phones often lacks self-calibration function, a novel proximity sensing device having self-calibration function is disclosed by the present invention, and comprises: a driving module, a lighting element, a first a light receiving module, a conversion module, a judge circuit, a synchronous sequential module, an analog front-end module, and an analog-to-digital convertor. When executing a noise calibration process, a sensing signal outputted from the first light receiving module is converted to a voltage signal by the conversion signal comprising a signal-amplifying MOSFET, a current mirror circuit, N number of cascode MOSFET pairs, and a current-to-voltage converting resistor. After that, the voltage is transmitted to the judge circuit, and then the noise calibration process would be completed under the cooperation of the judge circuit, the synchronous sequential module, and the analog front-end module.
    Type: Application
    Filed: April 9, 2017
    Publication date: May 3, 2018
    Inventors: SHENG-CHENG LEE, WEN-SHENG LIN, SHIH-HAO LAN
  • Publication number: 20180114570
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller checks whether a first number of a first page in the flash memory is greater than a predetermined threshold when the data storage device resumes operation after a power-off event, and stops writing data into a first TLC block when the first number of the first page is greater than the predetermined threshold, wherein the first TLC block was undergoing a first write operation which was unfinished when the power-off event occurred, and the first page was the last one being written in the first TLC block.
    Type: Application
    Filed: July 25, 2017
    Publication date: April 26, 2018
    Inventor: Wen-Sheng Lin
  • Publication number: 20180101302
    Abstract: A data storage device including a flash memory and a controller is provided. The flash memory has a plurality of TLC blocks, each of which includes a plurality of pages. The controller checks whether any of the TLC blocks was undergoing a write operation and unfinished at the time that the power-off event occurred when the data storage device resumes operation after a power-off event. When a first TLC block was undergoing the write operation and unfinished at the time that the power-off event occurred, the controller further checks whether data stored in a page which was the last one being written in the first TLC block can be successfully read, and continues to write the remaining data into the first TLC block when the data of the page which was the last one being written in the first TLC block can be successfully read.
    Type: Application
    Filed: July 25, 2017
    Publication date: April 12, 2018
    Inventor: Wen-Sheng Lin
  • Publication number: 20180101481
    Abstract: A flash memory control technology with high reliability. In a power recovery process, a microcontroller is configured to duplicate a last write page of a run-time write block of a flash memory and thereby generate a duplicated page in the run-time write block to replace the last write page for reliability enhancement.
    Type: Application
    Filed: December 11, 2017
    Publication date: April 12, 2018
    Inventor: Wen-Sheng Lin
  • Publication number: 20180101303
    Abstract: The present invention provides a data storage device that includes a flash memory and a controller. The flash memory has a plurality of TLC blocks, wherein each of the TLC blocks includes a plurality of pages. When the data storage device resumes operation after a power-off event, the controller stops writing data into a first TLC block which was undergoing a write operation that had not finished at the time the power-off event occurred, and the controller writes valid data of the first TLC block into a second TLC block after every interval of a first predetermined number of write commands is finished.
    Type: Application
    Filed: July 25, 2017
    Publication date: April 12, 2018
    Inventor: Wen-Sheng Lin
  • Patent number: 9939830
    Abstract: Differing from conventional LDO voltage regulator being unable to work at a sleep mode for saving power dissipation, the present invention discloses a smart low dropout (LDO) voltage regulator capable of being switched to an operation mode or a sleep mode based on the controlling of an enablable signal. This smart LDO voltage regulator comprises an input voltage detecting unit, a switch controlling unit and a voltage regulating module. During the sleep mode of the smart LDO voltage regulator, the switch controlling unit generates a switch controlling signal to change a switch setting of a switch unit of the voltage regulating module, so as to facilitate the smart LDO voltage regulator produce an output voltage through a first voltage regulating unit or a second voltage regulating unit of the voltage regulating module, or directly output input voltage as the output voltage.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: April 10, 2018
    Assignee: DYNA IMAGE CORP.
    Inventors: Sheng-Cheng Lee, Wen-Sheng Lin
  • Patent number: 9888777
    Abstract: A foldable bench having a seat and front support members that may be rotated between a folded position and an unfolded position includes a backrest, first and second front support members, a seat, and a latch. The front support members are mounted to the font of the backrest and rotate laterally between a folded and unfolded position. The seat is mounted to the front of the backrest and rotates vertically between a folded and unfolded position. In the folded position, the seat is sandwiched between the backrest and the front support members. In the unfolded position, the seat prevents the front support members from rotating inwards to the folded position. The seat is supported in an unfolded position by seat supports located on each of the front support members, which are received by receivers in the seat. A latch located on one of the arms selectively engages an opening in the seat to secure the seat in the unfolded position.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: February 13, 2018
    Assignee: Zhuhai Shichang Metals Ltd.
    Inventor: Wen-Sheng Lin
  • Patent number: 9870321
    Abstract: A flash memory control technology with high reliability. In a power recovery process, a microcontroller is configured to duplicate a last write page of a run-time write block of a flash memory and thereby generate a duplicated page in the run-time write block. The microcontroller is further configured use the mapping information accessed from the duplicated page in rebuilding a physical-to-logical address mapping table rather than the mapping information accessed from the last write page. The microcontroller is configured to maintain the physical-to-logical address mapping table on a random access memory for the run-time write block and is further configured to use the physical-to-logical address mapping table to update a logical-to-physical address mapping table maintained in the flash memory.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: January 16, 2018
    Assignee: Silicon Motion, Inc.
    Inventor: Wen-Sheng Lin
  • Publication number: 20180011648
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The flash memory has a plurality of single-level-cell units and a plurality of triple-level cell units. The controller performs a first predetermined number of read processes on a second predetermined number of specific single-level-cell units to program data stored in the second predetermined number of specific single-level-cell units into a specific triple-level cell unit of the triple-level cell units and determines whether any of the second predetermined number of specific single-level-cell units has not been read successfully by any of the read processes when the specific triple-level cell unit cannot be read successfully.
    Type: Application
    Filed: August 31, 2017
    Publication date: January 11, 2018
    Inventor: Wen-Sheng Lin
  • Publication number: 20170345939
    Abstract: A method for fabricating a fin field effect transistor (FinFET) is provided. The method includes: patterning a substrate to form a plurality of trenches in the substrate and at least one semiconductor fin between the trenches; forming a plurality of insulators in the trenches; forming a patterned photoresist on the insulators, wherein sidewalls of the semiconductor fin are partially covered by the patterned photoresist, and at least one area of the sidewalls is exposed by the patterned photoresist; by using the patterned photoresist as a mask, partially removing the semiconductor fin from the at least one area of the sidewalls exposed by the patterned photoresist so as to form at least one recess on the sidewalls of the semiconductor fin; removing the patterned photoresist after forming the at least one recess; and forming a gate stack to partially cover the semiconductor fin and the insulators.
    Type: Application
    Filed: August 18, 2017
    Publication date: November 30, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Sheng Lin, Chen-Chieh Chiang, Chi-Cherng Jeng
  • Patent number: D802954
    Type: Grant
    Filed: May 3, 2015
    Date of Patent: November 21, 2017
    Assignee: Zhuhai Shichang Metals, Ltd.
    Inventor: Wen-Sheng Lin
  • Patent number: D814816
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: April 10, 2018
    Assignee: Zhuhai Shichang Metals Ltd.
    Inventor: Wen-Sheng Lin