Patents by Inventor Wen Wang

Wen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12164474
    Abstract: The present disclosure relates to a method for configuring a priority level, a cloud platform, a system, a computing device, and a medium. The method for configuring a priority level for data on a cloud platform comprises determining the data type of received data; determining, according to the data type, a priority level specification used for describing a priority level of the received data; and calculating the priority level of the received data on the basis of the priority level specification of the received data.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: December 10, 2024
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wei Sun, He Yu, Wen Jing Zhou, Li Wang, Hai Tao Zhang
  • Patent number: 12162820
    Abstract: The compounds represented by Formula (I), which are peripheral alkyl and alkenyl chains extended benzene derivatives, are useful as dual autotaxin (ATX)/histone deacetylase (HD AC) inhibitors. These compounds may be included in a pharmaceutical composition along with a pharmaceutically acceptable carrier, and be used in a therapeutically effective amount for prophylaxis or treatment of various diseases and disorders.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: December 10, 2024
    Assignee: TAIWANJ PHARMACEUTICALS CO., LTD.
    Inventors: Syaulan S. Yang, Yan-feng Jiang, Meng-hsien Liu, Chia-hao Chang, Hao Shiuan Liu, Ying-chu Shih, Sheng Hung Liu, Chiung Wen Wang, Ting-ni Huang
  • Patent number: 12165926
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first and second gate electrode layers, and a dielectric feature disposed between the first and second gate electrode layers. The dielectric feature has a first surface. The structure further includes a first conductive layer disposed on the first gate electrode layer. The first conductive layer has a second surface. The structure further includes a second conductive layer disposed on the second gate electrode layer. The second conductive layer has a third surface, and the first, second, and third surfaces are coplanar. The structure further includes a third conductive layer disposed over the first conductive layer, a fourth conductive layer disposed over the second conductive layer, and a dielectric layer disposed on the first surface of the dielectric feature. The dielectric layer is disposed between the third conductive layer and the fourth conductive layer.
    Type: Grant
    Filed: July 20, 2023
    Date of Patent: December 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuan-Ting Pan, Kuo-Cheng Chiang, Shang-Wen Chang, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 12162300
    Abstract: Microporous structures in face films are described for improving printability of the films. Also described are laminates and pressure sensitive adhesive laminates including the microporous structured face films. Various related methods are additionally described.
    Type: Grant
    Filed: August 16, 2023
    Date of Patent: December 10, 2024
    Assignee: Avery Dennison Corporation
    Inventors: David Bland, Wen-Li A. Chen, Michael Ramsay, Shanshan Wang
  • Publication number: 20240407232
    Abstract: A display panel has a display region, an opening region, and an opening peripheral region; the opening peripheral region includes a first isolation region surrounding the opening region; the display panel includes a substrate, a driving circuit layer and first isolation columns; at least one insulating layer of the driving circuit layer is located in the display region and the opening peripheral region; the first isolation columns are disposed on the at least one layer of insulating layer and located in the first isolation region; each first isolation column surrounds the opening region; the first isolation columns are arranged at intervals along a radial direction of the opening region; a portion of the at least one insulating layer located between at least two adjacent first isolation columns is provided therein with a groove; and a filling layer made of an organic material is filled in the groove.
    Type: Application
    Filed: March 11, 2022
    Publication date: December 5, 2024
    Applicants: MIANYANG BOE OPTOELECTRONICS TECHNOLOGY CO.,LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zongqiu HANG, Congzhen HAN, Zifeng WANG, Xin WU, Xiaoge WANG, Engan YE, Yongkai WU, Liting ZHANG, Gaoqiang WANG, Quanjun WANG, Huaqiang GUO, Wen SUN, Guoren HU
  • Publication number: 20240405809
    Abstract: A method for determining a resource utilization rate. The method is performed by a network side device, and includes: determining the resource utilization rate by using a total number of physical resource blocks (PRBs) corrected by a layer factor, wherein the layer factor is determined according to PRB usage information of at least one sampling occasion, and the PRB usage information of the at least one sampling occasion at least comprises a number of multiple input multiple output (MIMO) layers used by a PRB in data transmission.
    Type: Application
    Filed: September 28, 2022
    Publication date: December 5, 2024
    Inventors: Ningyu Chen, Xin Li, Wenlin He, Wei Deng, Jianhui Mao, Le Wang, Wen Fan
  • Publication number: 20240401697
    Abstract: An sealing device for a display device is provided. The display device includes a display surface and an outer periphery surface. The sealing device comprises a base and a sealing ring component. The base has an inner side surface and an inner bottom surface. The sealing ring component is disposed in the base along the inner side surface. The sealing ring component is propped against the outer periphery surface without in contact with the display surface when the display device is arranged on the base, and then a to-be-evacuated space is formed between the display surface and the inner bottom surface.
    Type: Application
    Filed: October 23, 2023
    Publication date: December 5, 2024
    Applicant: DATA IMAGE CORPORATION
    Inventors: Ching-Wen CHEN, Hsien-Kuan WANG, Hao-Yu CHUANG
  • Publication number: 20240402490
    Abstract: A vehicle display device includes a light source module, a light splitting element, first and second polarization reflection modules. The light source module provides a first light beam having a first polarization state and a second light beam having a second polarization state. The light splitting element reflects the first light beam and allows the second light beam to pass through. The first polarization reflection module reflects the first light beam to the light splitting element and converts the first polarization state into the second polarization state. The second polarization reflection module reflects the first and second light beam and convert the second polarization states into third polarization states. The first and second light beam from the second polarization reflection module form a far-field virtual image and a near-field virtual image through the imaging element.
    Type: Application
    Filed: May 31, 2024
    Publication date: December 5, 2024
    Applicant: Coretronic Corporation
    Inventors: Yan Wen Lin, Hung-Pin Chen, Wen-Chieh Chung, Wen-Chun Wang
  • Publication number: 20240404881
    Abstract: A semiconductor device structure and methods of forming the same are described. In some embodiments, the method includes depositing an etch stop layer on a substrate, depositing a first substrate layer on the etch stop layer, forming a plurality of active devices on the first substrate layer, forming an interconnection structure over the active devices, flipping over the substrate, removing the substrate, removing the etch stop layer to expose the first substrate layer, and forming a cooling substrate layer on the exposed first substrate layer. The cooling substrate layer has a thermal conductivity substantially greater than a thermal conductivity of the substrate.
    Type: Application
    Filed: June 3, 2023
    Publication date: December 5, 2024
    Inventors: Chih-Chao Chou, Chih-Hao Wang, Ching-Wei Tsai, Shang-Wen Chang, Yi-Hsun Chiu
  • Patent number: 12160985
    Abstract: Methods and devices including a plurality of memory cells and a first bit line connected to a first column of memory cells of the plurality of memory cells, and a second bit line connected to the first column of cells. The first bit line is shared with a second column of memory cells adjacent to the first column of memory cells. The second bit line is shared with a third column of cells adjacent to the first column of cells opposite the second column of cells.
    Type: Grant
    Filed: January 9, 2023
    Date of Patent: December 3, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ping-Wei Wang, Chih-Chuan Yang, Lien Jung Hung, Feng-Ming Chang, Kuo-Hsiu Hsu, Kian-Long Lim, Ruey-Wen Chang
  • Patent number: 12157763
    Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that specifically binds to a spike protein of SARS-CoV-2. The present disclosure also relates to a pharmaceutical composition, a method for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.
    Type: Grant
    Filed: January 3, 2024
    Date of Patent: December 3, 2024
    Assignee: Academia Sinica
    Inventors: Kuo-I Lin, Che Ma, Chi-Huey Wong, Szu-Wen Wang, Yi-Hsuan Chang, Xiaorui Chen, Han-Yi Huang
  • Patent number: 12159090
    Abstract: The invention relates to an optimal allocation method for stored energy coordinating electric vehicles (EVs) to participate in auxiliary service market (ASM), including the following steps: 1. Predict the reported capacity of daily 96 points for EVs to participate in the ASM by least square support vector machine (LSSVM). 2. Fit the daily total load distribution of EVs. 3. Determine the error distribution between the reported capacity and the actual response capacity, and simulate the total daily load capacity of EVs in the future with Monte Carlo method. 4. Calculate the energy storage capacity required by EVs daily participating in ASM. 5. Build the objective function to minimize the scheduling risk of auxiliary service. 6. Solve the energy storage model in step 5 with particle swarm optimization (PSO), and output the configuration results of optimal energy storage capacity and energy storage power. The invention can improve the adjustable capacity of EVs participating in ASM.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: December 3, 2024
    Assignees: North China Electric Power University, State Grid Electric Vehicle Service Ltd.
    Inventors: Dunnan Liu, Mingguang Liu, Xiaofeng Peng, Heping Jia, Wen Wang, Lingxiang Wang, Mengjiao Zou, Yue Zhang, Ye Yang, Shu Su, Desheng Bai
  • Publication number: 20240395858
    Abstract: A semiconductor device includes a first channel structure extending along a first lateral direction and a second channel structure extending along the first lateral direction. The second channel structure is spaced apart from the first channel structure. The semiconductor device further includes a high-k dielectric structure extending along the first lateral direction and disposed between the first and second channel structures. The high-k dielectric structure has a bottom surface that comprises a bottommost portion and at least a first plateau portion elevated from the bottommost portion.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Chieh Huang, Chia-Cheng Chao, Yu-Wen Wang
  • Publication number: 20240396055
    Abstract: Disclosed are a nickel/nickel hydroxide electrode catalyst, a preparation method thereof and an application thereof, the catalyst includes a porous matrix structure and a nanosheet, where the nanosheet is doped in the porous matrix structure, a mass percentage of the porous matrix structure is 95%-99%, a mass percentage of the nanosheet is 1%-5%, and a mass density of the nanosheet is 12-15 mg/cm2; and the porous matrix structure is nickel, and the nanosheet is nickel hydroxide in ? configuration. The present disclosure develops an electrode catalyst with higher catalytic efficiency and a simpler preparation method based on the Ni-based catalysts to achieve efficient application of hydrogen energy.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 28, 2024
    Applicant: North China Electric Power University
    Inventors: Jianguo Liu, Wen Kuang, Tianrang Yang, Cheng Wang, Zhixiang Cui, Tao Chen
  • Publication number: 20240396572
    Abstract: A low density parity check (LDPC) channel encoding method is used in a wireless communications system. A communication device encodes an input bit sequence by using an LDPC matrix, to obtain an encoded bit sequence for transmission. The LDPC matrix is obtained based on a lifting factor Z and a base matrix. The base matrix may be one of eight exemplary designs. The encoding method can be used in various communications systems including fifth generation (5G) telecommunication systems, and can support various encoding requirements for information bit sequences with different code lengths.
    Type: Application
    Filed: May 24, 2024
    Publication date: November 28, 2024
    Inventors: Jie Jin, Wen Tong, Jun Wang, Aleksandr Aleksandrovich Petiushko, Ivan Leonidovich Mazurenko, Chaolong Zhang
  • Publication number: 20240395883
    Abstract: A method of manufacturing a semiconductor structure with flush shallow trench isolation and gate oxide, including performing a first etching process to remove a pad oxide layer at one side of a STI and recess the substrate, the first etching process also forms a recess portion not covered by the first etching process and a protruding portion covered by the first etching process on the STI, forming a gate oxide layer on the recessed substrate, performing a second etching process to remove the protruding portion and the pad oxide layer and a first oxide layer on a drain region, performing a third etching process to remove a part of the STI and a second oxide layer, so that a top plane of the STI is flush with the gate oxide layer.
    Type: Application
    Filed: June 15, 2023
    Publication date: November 28, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ta-Wei Chiu, Ping-Hung Chiang, Chia-Ling Wang, Wei-Lun Huang, Chia-Wen Lu, Yueh-Chang Lin
  • Patent number: 12151932
    Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.
    Type: Grant
    Filed: August 3, 2023
    Date of Patent: November 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Sung Chang, Chun-Wen Cheng, Fei-Lung Lai, Shing-Chyang Pan, Yuan-Chih Hsieh, Yi-Ren Wang
  • Patent number: 12155507
    Abstract: A system and method for providing on-demand edge compute. The system may include an orchestrator that provides a UI and controls an abstraction layer for implementing a workflow for providing on-demand edge compute. The abstraction layer may include a network configuration orchestration (NCO) system (e.g., a Network-as-a-Service (NaaS) system) and an API that may provide an interface between the orchestrator and the NCO. The API may enable the orchestrator to communicate with the NCO for receiving requests that enable the NCO to integrate with existing network controllers, orchestrators, and other systems and perform various network provisioning tasks (e.g., to build and provision a communication path between server instances). The various tasks, when executed, may provide end-to-end automated network provisioning services as part of providing on-demand edge compute service to users. The API may further enable the ECS orchestrator to receive information from the NCO, (e.g.
    Type: Grant
    Filed: December 29, 2021
    Date of Patent: November 26, 2024
    Assignee: Level 3 Commmunications, LLC
    Inventors: Austin Ritchie, Scott Hemmann, Wen Wang, Brett Dwyer
  • Publication number: 20240382628
    Abstract: Provided herein are polymeric particles and compositions (i.e., “backpacks”) that can adhere to cells and provide delivery of payload agents to those cells, and/or direct therapeutic activity of those cells.
    Type: Application
    Filed: July 15, 2022
    Publication date: November 21, 2024
    Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
    Inventors: Samir MITRAGOTRI, Li-Wen WANG, Yongsheng GAO, Neha KAPATE, Supriya Suraj PRAKASH, Ninad KUMBHOJKAR
  • Publication number: 20240383910
    Abstract: Novel small molecule proteolysis-targeting chimeras (PROTACs) are provided, along with methods for their use as Bruton's tyrosine kinase (BTK) degraders. The small molecule PROTACs described herein are useful in treating and/or preventing BTK-related diseases, such as cancer, neurodegenerative disorders, inflammatory diseases, and metabolic disorders. Also provided are methods for inducing BTK degradation in a cell using the compounds and compositions described herein.
    Type: Application
    Filed: May 15, 2024
    Publication date: November 21, 2024
    Applicant: Baylor College of Medicine
    Inventors: Wen-Hao Guo, Xin Yu, Ran Cheng, Jin Wang