Abstract: A semiconductor wafer defect detection system captures test images of a semiconductor wafer. The system analyzes the test images with an analysis model trained with a machine learning process. The analysis model generates simulated integrated circuit layouts based on the test images. The system detects defects in the semiconductor wafer by comparing the simulated integrated circuit layouts to reference integrated circuit layouts.

Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.

Abstract: Disclosed is a compact electronic device configured to efficiently manage air circulation and prevent overheating. The device features an innovative cooling system comprising a fan module within a uniquely structured housing that includes a base portion, an inner casing, and a removable top cover. The inner casing features strategically placed windows that direct drawn airflow over specific power supply components, enhancing cooling performance. The enhanced cooling is also provided by an air gap formed between the base portion and the top cover, as well as sidewall intake paths of varying widths adjacent the windows. These features work together to draw in and distribute ambient air effectively across heat-generating components, leveraging negative pressure created by a fan module. The result is a highly efficient cooling mechanism for compact devices such as wireless access point configured to plug into electrical outlets.

Abstract: A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.

Abstract: Sacrificial pillars for a semiconductor device assembly, and associated methods and systems are disclosed. In one embodiment, a region of a semiconductor die may be identified to include sacrificial pillars that are not connected to bond pads of the semiconductor die, in addition to live conductive pillars connected to the bond pads. The region with the sacrificial pillars, when disposed in proximity to the live conductive pillars, may prevent an areal density of the live conductive pillars from experiencing an abrupt change that may result in intolerable variations in heights of the live conductive pillars. As such, the sacrificial pillars may improve a coplanarity of the live conductive pillars by reducing variations in the heights of the live conductive pillars. Thereafter, the sacrificial pillars may be removed from the semiconductor die.

Abstract: An air flow redirection system for redirecting exhaust air flow away from an external surface upon which the device is positioned, the device may include a housing including a first side, a second side opposite the first side, at least one sidewall extending between the first side and second side, a vent, the vent defining an opening extending through the at least one sidewall placing an interior chamber of the device in fluid communication with an exterior region, at least one rib defining slots in the vent, and an arc. Air flow produced by a fan located in the interior chamber is directed towards the vent in a first direction, and the arc acts in combination with the at least one rib and raises a direction of the air flow upward in a second direction towards a plane of the first side as the air flow exits the vent.

Abstract: An integrated circuit includes a first clocked forwarding-switch and a second clocked forwarding-switch each implemented with strong transistors in at least one strong active-region structure. The integrated circuit also includes a first clocked inverter and a second clocked inverter each implemented with weak transistors in at least one weak active-region structure. The integrated circuit further includes a first inverter cross coupled with the first clocked inverter and a second inverter cross coupled with the second clocked inverter. An output of the first clocked forwarding-switch is conductively connected with an output of the first clocked inverter, and an output of the second clocked forwarding-switch is conductively connected with an output of the second clocked inverter.

Abstract: The compounds represented by Formula (I), which are peripheral alkyl and alkenyl chains extended benzene derivatives, are useful as dual autotaxin (ATX)/histone deacetylase (HD AC) inhibitors. These compounds may be included in a pharmaceutical composition along with a pharmaceutically acceptable carrier, and be used in a therapeutically effective amount for prophylaxis or treatment of various diseases and disorders.

Abstract: The present disclosure relates to an antibody or antigen-binding fragment thereof that specifically binds to a spike protein of SARS-CoV-2. The present disclosure also relates to a pharmaceutical composition, a method for treating and/or preventing diseases and/or disorders caused by a coronavirus in a subject in need thereof, and a method for detecting a coronavirus in a sample.

Abstract: The invention relates to an optimal allocation method for stored energy coordinating electric vehicles (EVs) to participate in auxiliary service market (ASM), including the following steps: 1. Predict the reported capacity of daily 96 points for EVs to participate in the ASM by least square support vector machine (LSSVM). 2. Fit the daily total load distribution of EVs. 3. Determine the error distribution between the reported capacity and the actual response capacity, and simulate the total daily load capacity of EVs in the future with Monte Carlo method. 4. Calculate the energy storage capacity required by EVs daily participating in ASM. 5. Build the objective function to minimize the scheduling risk of auxiliary service. 6. Solve the energy storage model in step 5 with particle swarm optimization (PSO), and output the configuration results of optimal energy storage capacity and energy storage power. The invention can improve the adjustable capacity of EVs participating in ASM.

Abstract: A semiconductor device includes a first channel structure extending along a first lateral direction and a second channel structure extending along the first lateral direction. The second channel structure is spaced apart from the first channel structure. The semiconductor device further includes a high-k dielectric structure extending along the first lateral direction and disposed between the first and second channel structures. The high-k dielectric structure has a bottom surface that comprises a bottommost portion and at least a first plateau portion elevated from the bottommost portion.

Abstract: A system and method for providing on-demand edge compute. The system may include an orchestrator that provides a UI and controls an abstraction layer for implementing a workflow for providing on-demand edge compute. The abstraction layer may include a network configuration orchestration (NCO) system (e.g., a Network-as-a-Service (NaaS) system) and an API that may provide an interface between the orchestrator and the NCO. The API may enable the orchestrator to communicate with the NCO for receiving requests that enable the NCO to integrate with existing network controllers, orchestrators, and other systems and perform various network provisioning tasks (e.g., to build and provision a communication path between server instances). The various tasks, when executed, may provide end-to-end automated network provisioning services as part of providing on-demand edge compute service to users. The API may further enable the ECS orchestrator to receive information from the NCO, (e.g.

Abstract: A thin film circuit board includes a substrate and a thermal conductive film which is adhered to the substrate and includes a first conductive portion, a second conductive portion and a third conductive portion. The thermal conductive film is designed to be polygonal and non-rectangular in order to reduce stress generated in the substrate and the thermal conductive film and protect the thin film circuit board from warpage.

Abstract: Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.

Abstract: Provided herein are polymeric particles and compositions (i.e., “backpacks”) that can adhere to cells and provide delivery of payload agents to those cells, and/or direct therapeutic activity of those cells.

Abstract: A device and a method for measuring a rotation angle of a spherical hinge joint with a football-shaped structure are provided. The measuring device includes a driving electrode, and an induction electrode system. During measurement, the driving electrode and induction electrode system are both installed in a measured spherical hinge joint. The spherical hinge joint includes a ball socket base, and a ball head installed in the ball socket base. The driving electrode is fixed to the ball head. The induction electrode system includes multiple regular hexagonal spherical electrode plates, and one or more regular pentagonal spherical electrode plates. Five regular hexagonal spherical electrode plates are all arranged around any one regular pentagonal spherical electrode plate, respective regular hexagonal spherical electrode plates and respective regular pentagonal spherical electrode plate are assembled to form a spherical shell structure.

Abstract: A policy processing method and apparatus and a network function are provided. The policy processing method includes: sending, by a first network function, UE policy assistance information to a second network function, where the UE policy assistance information is used by the second network function to generate, configure, or update a policy of a target UE.

Abstract: The present disclosure provides a photomask. The photomask includes a plurality of pattern areas and a training area. Each of the pattern areas is defined by a respective boundary, and a first pattern area of the pattern areas includes a first mask feature. The training area is adjacent to a boundary of the first pattern area, and includes a first training feature. The first training feature is comparable to the first mask feature.

Abstract: A disaster roaming control method and apparatus, a terminal, and a network side device. The disaster roaming control method in embodiments of this application includes: A terminal receives first indication information, where the first indication information indicates to disable disaster roaming; and the terminal performs a first operation based on the first indication information, where the first operation includes at least one of the following: deleting a disaster roaming-related terminal context; initiating a deregistration process; receiving a first message, where the first message includes at least one of the following: a terminal configuration update message, a deregistration request message, and a NAS rejection message; and selecting a PLMN.